1、 MIL-PRF-19500/753B 20 May 2013 SUPERSEDING MIL-PRF-19500/753A 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, J
2、ANSR, AND JANSF This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance
3、requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche c
4、urrent (IAS). 1.2 Physical dimensions. See figure 1, (TO-254AA). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(1) TC=+25C PTTA=+25C RJC(2) VDSVDGVGSID1(3) (4) TC=+25C ID2 TC=+100C ISIDM (5) TJand TSTGW W C/W V dc V dc V dc A dc A dc A dc A (pk) C 2N7580T1 208 2.60 0.6 100 100 20
5、 45 45 45 180 -55 to +150 2N7582T1 208 2.60 0.6 150 150 20 45 44 45 180 2N7584T1 208 2.60 0.6 200 200 20 45 35 45 180 2N7586T1 208 2.60 0.6 250 250 20 45 28.5 45 180 (1) Derate linearly by 1.67 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum
6、 theoretical IDlimit. IDis limited to 45 A (by package and internal wires and may be limited by pin diameter): (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1; ID1as calculated by footnote (3). AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMD* Comments, suggestions
7、, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database
8、at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 July 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/753B 2 1.4 Primary electrical charact
9、eristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= 1.0mA dc VGS(TH)1VDS VGSID= 1.0 mA dc Max IDSS1VGS= 0 VDS= 80% of rated VDSMax rDS(on)(1) VGS= 12V, ID= ID2VISO 70,000 ft. altitude EAS TJ= +25C TJ= +150C V dc V dc A dc V dc mJ 2N7580T1 2N7582T1 2N7584T1 2N7586T1 100 150 200 250 Min Max 2.0 4.0 2.0
10、4.0 2.0 4.0 2.0 4.0 10 10 10 10 0.011 0.019 0.029 0.041 0.021 0.043 0.068 0.103 250 512 353 344 251 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents ci
11、ted in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of thi
12、s specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
13、 those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicks
14、earch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the ref
15、erences cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-195
16、00/753B 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Protrusion thickness of ceramic eyelets included in dimension LL. 4. All terminals are isolated from case. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dim
17、ensions and configuration, TO-254AA. Dimensions Notes Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 3 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.0
18、7 20.32 4 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 4 Term 1 Drain Term 2 Source Term 3 Gate TO-254 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/753B 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as s
19、pecified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see
20、4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-254AA) herein. 3
21、.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Multiple chip construction. Multiple chip construction is not permitted to meet th
22、e requirements of this specification. 3.5 Electrostatic discharge (ESD) protection. The devices covered by this specification require electrostatic discharge protection (see 3.5.1). 3.5.1 Handling. Metal oxide semiconductor (MOS) devices must be handled with certain precautions to avoid damage due t
23、o the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices
24、 in conductive foam or carriers. e. Avoid use of plastic, rubber or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to sour
25、ce, R or 100 k, whenever bias voltage is applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements sh
26、all be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided b
27、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/753B 5 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Co
28、nformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a
29、prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for R
30、esaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/753B 6 4.3 Screening (JANS and JANTXV). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devi
31、ces that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) (1) (2) Measurement JANS JANTXV (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, EAS(see 4.3.2) Method 3470 of MIL-STD-750, EAS(see 4.3.2) (3) 3
32、c Method 3161 of MIL-STD-750, thermal impedance, (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance, (see 4.3.3) 9 Subgroup 2 of table I herein Not applicable IGSSF1, IGSSR1, IDSS1as a minimum 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSS
33、F1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1,
34、 IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of in
35、itial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. Subgroups 2 and 3 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR
36、1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. 17 Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herei
37、n. Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temper
38、ature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. * * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/753B 7 4.3.1 Gate stress test. Apply VGS= 24 V minimum for t = 250 s minimum.
39、4.3.2 Single pulse avalanche energy (EAS). a. Peak current IAS= ID1. b. Inductance: . ( )212EIV VVASDBR DDBRmH minimum. c. Gate to source resistor (RGS) 25 RGS 200 . d. Supply voltage (VDD) . VDD= 25 V dc, except VDD= 50 V dc (2N7586T1), up to rated VDS. e. Peak gate voltage (VGS) 12 V, up to maximu
40、m rated VGS. f. Initial case temperature TC= +25C +10C, -5C. g. Number of pulses to be applied 1 pulse minimum. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH,
41、 tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 30 - 60 s max. See table III, group E, subgroup 4 herein. * 4.3.4 Dielectric withstanding voltage. a. Magnitude of test voltage900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of test voltag
42、eAll leads to case (bunch connection). d. Method of connectionMechanical. e. Kilovolt-ampere rating of high voltage source1,200V /1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500V /second. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-
43、PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and tabl
44、e E-VIB (JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/753B 8 * 4.4.2.1 Group B inspection, table E
45、-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. * B4 1042 Intermittent operation life, condition D. No heat sink or forced-air cooling on the device shall be permitted during the on cycle; ton= 30 seconds minimum. B5 1042 Accelerated steady-state gate bi
46、as, condition B, VGS= rated; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated; TA= +175C, t = 120 hours minimum; or TA= +150C, t = 240 hours minimum. B5 2037 Test condition D. * 4.4.2.2 Group B inspection, tab
47、le E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles. * B3 1042 Intermittent operation life, condition D. No heat sink or forced-air cooling on the device shall be permitted during the on cycle; ton= 30 seconds minimum. * 4.4.3 Group C inspection. Group C
48、 inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condition A, weight = 10 lbs., t = 10 s. C5 3161 See 4.3.3, RJC= 0.60 C/W. * C6 1042 Intermittent operation life, condition D. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. ton= 30 se
