1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. 1.2.2, device type 01, change the generic number to ACT5028-201. 09-03-30 Joseph D. Rodenbeck B Added device type 03. Replaced figure 6. Changed paragraph 6.8 to include the device type 03 and make corrections. -sld 10-09-14 C
2、harles F. Saffle C Table I; Added footnote 2 to the Input capacitance test (CIN) and separated the device type 03 from device type 01 and 02 with a max limit of 120 ns for CW/CCW, RIPPLE, B1-B16 rise and fall time test. -sld 10-10-27 Charles F. Saffle D Added radiation hardness assurance requirement
3、s. Paragraph 1.3; Added Power Dissipation (PD) rating. Corrected Maximum junction temperature from “135C“ to “150C“. Table I; Added “Operating Supply Current (ISC)“ test. Corrected the subgroups from “1,2,3“ to “4,5,6“ and added footnote 4 for the VCO frequency (fVCO) test. Table II; Added subgroup
4、1 for Interim electrical parameters. -sld 12-12-17 Charles F. Saffle REV SHEET REV D D D D D D D D D D D D D D D D D SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Steve Duncan
5、DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ STANDARD MICROCIRCUIT DRAWING CHECKED BY Raymond Monnin THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, LINEAR, RESOLVER-TO-DIGITAL CONVERTER, 16-BIT, TRACKING, MONOLITHIC
6、 SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 04-10-01 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-04235 SHEET 1 OF 31 DSCC FORM 2233 APR 97 5962-E411-12Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MIC
7、ROCIRCUIT DRAWING SIZE A 5962-04235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes wh
8、ich are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 H 04235 03 K X X Federal RHA Device Device Case Lead stock class de
9、signator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate R
10、HA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 ACT5028-201 Resolver-to-digital converter, tracking, 16-bit 02 ACT5028-202 Resolver-to-digital converter, tracking,
11、16-bit 03 RDC5028-301 Resolver-to-digital converter, tracking, 16-bit 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qua
12、lification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class available. This level is intended for use in space applications. H Standard military quality class level. This level i
13、s intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow
14、, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C, and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the dev
15、ice acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may hav
16、e a limited temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-04235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The c
17、ase outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 52 Ceramic, quad flat package 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Positive supply volt
18、age range (VCC and VDD) -0.5 V dc to +7.0 V dc Analog output current (Output shorted to GND) . 32 mA Digital output current (Output shorted to GND) . 18.6 mA Analog input voltage range . -0.3 V to (VCC+ .3 V) Digital input voltage range -0.3 V to (VDD+ .3 V) Power dissipation (PD), TC = -55C to +125
19、C . . 200 mW Thermal resistance, junction-to-case (JC) 1.25C/W Junction temperature (TJ). . +150C Storage temperature . -65C to +150C Lead temperature (soldering, 10 seconds) . +300C 1.4 Recommended operating conditions. Operating voltage range (VCC and VDD) +4.5 V dc to +5.5 V dc Operating current
20、(ICC+ IDD) . 23 mA Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. 2/ Total Ionizing Dose (TID) (dose rate = 50 - 300 rad(Si)/s): In accordance with MIL-STD-883, method 1019, condition A 1 Mrad(Si) Enhanced Low Dose Rate Sensitvity (ELDRS) . CMOS Immune Single event
21、phenomenon (SEP) effective linear energy transfer (LET): No SEL 100 MeV-cm2/mg 3/ 4/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise spec
22、ified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standa
23、rd for Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ See section 4.3.5 for the manufacturers radiation hardness assurance analy
24、sis and testing. 3/ Single event testing was performed at 100 MeV-cm2/mg with no latch-up exhibited. 4/ See table IB. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-04235 DLA LAND AND MARITIME COLUMBUS, OHIO
25、 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardi
26、zation Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F 1192 - Standard Guide for the Meas
27、urement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, super
28、sedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 shall include the per
29、formance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance requirements as defined in MIL-PRF-385
30、34 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as sp
31、ecified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specified on figure 3. 3.2
32、.4 Functional Block diagram. The functional block diagram shall be as specified on figure 4. 3.2.5 Transfer function diagram. The transfer function diagram shall be as specified on figure 5. 3.2.6 Timing diagram(s). The timing diagram(s) shall be as specified on figure 6. 3.2.7 Radiation exposure ci
33、rcuits. The radiation exposure circuits shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical perfor
34、mance characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table IA. 3.5
35、Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked. Provided by IHSNot for ResaleNo reproduction or networking permitted without licen
36、se from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-04235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintai
37、n the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained
38、under document revision level control by the manufacturer and be made available to the preparing activity (DLA Land and Maritime -VA) upon request. 3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of
39、compliance (original copy) submitted to DLA Land and Maritime - VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of
40、microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-04235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electric
41、al performance characteristics. Test Symbol Conditions 1/ -55C TA +125C VCC= VDD= +5 V dc unless otherwise specified Group A subgroups Device types Limits Unit Min Max DC PARAMETERS Operating Supply Current 2/ ISCVCC= VDD= +5.5 V dc 1,2,3 All 35 mA Accuracy 2/ 3/ ACC Add 1 LSB for total error 1,2,3
42、All 5 Minutes Repeatability 1,2,3 All 1 LSB Resolution per LSB, 2/ (see paragraph 6.8) RES 10 Bit Mode 12 Bit Mode 14 Bit Mode 16 Bit Mode 1,2,3 All 0.35 0.09 0.022 0.0055 Degrees 10 Bit Mode 12 Bit Mode 14 Bit Mode 16 Bit Mode 21.1 5.27 1.32 0.33 Minutes Maximum tracking rate 2/ 10 Bit Mode 12 Bit
43、Mode 14 Bit Mode 16 Bit Mode SC1 SC2 Bits used 0 0 B1 - B10 0 1 B1 - B12 1 0 B1 - B14 1 1 B1 - B16 1,2,3 All 1024 256 64 16 RPS VCO frequency 4/ fVCO4,5,6 All 1.05 MHz ANALOG INPUTS Voltage between analog signal inputs, SIN, COS, REF 2/ 4/ VSIN,VCOS, VREF4,5,6 All 1.0 1.5 Vrms Reference input freque
44、ncy, REF 4/ fREF4,5,6 All 45 30K Hz Input impedance 4/ ZIN TA= +25C and +125C 1,2 All 2.5 M Input capacitance 4/ CIN TA= +25C 1 All 15 pF DC voltage bias on -SIN, and -COS VB 1,2,3 All 2.0 2.5 V dc Input bias current 2/ IB 1 All -100 +100 nA 2 -1000 +1000 See footnotes at end of table. Provided by I
45、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-04235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbo
46、l Conditions 1/ -55C TA +125C VCC= VDD= +5 V dc unless otherwise specified Group A subgroups Device types Limits Unit Min Max DC PARAMETERS - CONTINUED, DIGITAL INPUTS Input low voltage 4/ VIL 1,2,3 All 0.8 V dc Input high voltage 4/ VIH1,2,3 All 2.0 V dc Input leakage current 2/ ILI 1 All -200 +200
47、 nA 2 -2000 +2000 nA Input impedance 2/ ZIN TA= +25C and +125C 1,2 All 2.5 M Input capacitance 4/ CIN TA= +25C 1 All 15 pF Output low voltage 2/ VOL IOL= 1.6 mA 1,2,3 All 0.3 V dc Output high voltage 2/ VOHIOH= -1.6 mA 1,2,3 All VLI/O- .8 V dc DIGITAL I/O, B1 - B16 5/ Input low voltage 4/ VIL1,2,3 A
48、ll 0.8 V dc Input high voltage 4/ VIH1,2,3 All 2.0 V dc Output low voltage 2/ VOL IOL= 1.6 mA 1,2,3 All 0.3 V dc Output high voltage 2/ VOHIOH= -1.6 mA 1,2,3 All VLI/O- .8 V dc Input leakage current 2/ ILI 1 All -200 +200 nA 2 -2000 +2000 nA High-Z leakage current 4/ IZ 1 All -200 +200 nA 2 -2000 +2000 nA See footnotes at end of table. 2SCand,1SC,INH,LOADDATA,ENABLECCW/CWand,RIPPLE,BUSYOUTPUTSDIGITALProvided by IHSNot for ResaleNo reproduction or net
