1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHET REV SHET REV STATUS REV OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DR
2、AWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY ROBERT H. HEBER AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 09-02-26 MICROCIRCUIT, LINEAR, DUAL LOW OFFSET, MATCHED, OPERATIONAL AMPLIFIER, MULTI-CHIP SILICON AMSC N/A REVISION LEVEL SIZE A CAGE CODE 67268 5962-08214 SHEET
3、 1 OF 10 DSCC FORM 2233 APR 97 5962-E174-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08214 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE
4、 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a
5、 choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 08214 01 V C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see
6、 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are mar
7、ked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 OP207A Radiation hardened, dual, low offset, matched multi-chip operational amplifier 1.2.
8、3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance wi
9、th MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 14 Dual-in-line 1.2.5 Lead finish. The lead fini
10、sh is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08214 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, O
11、HIO 43218-3990 REVISION LEVEL SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage 22 V Differential input voltage 30 V Input voltage . 22 V 2/ Power dissipation (PD) 500 mW Output short circuit duration Indefinite Junction temperature (TJ) . +150C Storage temperature range
12、. -65C to +150C Lead temperature (soldering, 60 seconds) +300C Thermal resistance, junction-to-case (JC) . 29C/W Thermal resistance, junction-to-ambient (JA) 91C/W 1.4 Recommended operating conditions. Supply voltage 15 V Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation feature
13、s. Maximum total dose available (dose rate = 50 300 rads(Si)/s) 100 krads(Si) 3/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specifie
14、d, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interf
15、ace Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mi
16、l or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document,
17、 however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For supply voltage
18、s less than 22 V, the absolute maximum input voltage is equal to the supply voltages. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specif
19、ied in MIL-STD-883, method 1019, condition A.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08214 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 4 DSCC FORM 2234 APR 97 3. REQU
20、IREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or fu
21、nction as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall
22、be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.
23、2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limi
24、ts. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgro
25、ups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to sp
26、ace limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with
27、 MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For
28、device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an appr
29、oved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein o
30、r for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits del
31、ivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. Fo
32、r device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. D
33、evice class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08214 DEFENSE SUPPLY CENTER COLUMBUS COL
34、UMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxInput offset voltage VOS1 01 100 V 2,3 230 M,D,P,L,R 4/ 1 500
35、Average input offset 5/ voltage drift TCVOS1,2,3 01 1.3 V/C Input offset current IOS1 01 2.8 nA 2,3 5.6 M,D,P,L,R 4/ 1 25 Input bias current IB1 01 3.0 nA 2,3 5.6 M,D,P,L,R 4/ 1 125 Input voltage range 5/ IVR 6/ 1,2,3 01 13 V CMRR VCM= 13 V 1 01 106 dB Common mode rejection 5/ ratio 2,3 103 PSRR VS=
36、 3 V to 18 V 1 01 20 V/V Power supply rejection 5/ ratio 2,3 32 Output voltage swing 5/ VORL= 10 k 4 01 12.5 V RL= 2 k 4,5,6 12 RL= 1 k 4 10 Large signal voltage gain AVOVO= 10 V, RL= 2 k 4 01 200 V/mV 5,6 150 M,D,P,L,R 4/ 4 100 Power supply current ISYNo load, both amplifiers 1 01 8 mA M,D,P,L,R 4/
37、 1 8 Input noise voltage 5/ enfO= 1 Hz to 100 Hz, TA= +25C 7 01 150 nVrms Input noise current 5/ infO= 1 Hz to 100 Hz, TA= +25C 7 01 8 pArms See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING
38、SIZE A 5962-08214 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max
39、 VOSadj+ RP= 20 k, TA= +25C 1 01 +0.5 mV Offset adjustment 5/ range VOSadj- RP= 20 k, TA= +25C 1 -0.5 VOS1 01 90 V Input offset voltage 5/ match 2,3 180 IB+1 01 3.5 nA Average non-inverting 5/ bias current 2,3 6.0 IOS+1 01 3.5 nA Non-inverting offset 5/ current 2,3 6.5 IOS-1 01 3.5 nA Inverting offs
40、et 5/ current 2,3 6.5 CMRR 1 01 103 dB Common mode 5/ rejection ratio match 2,3 100 PSRR VS= 3 V to 18 V 1 01 32 V/V Power supply 5/ rejection ratio match 2,3 51 ISC+ 1 01 5 58 mA Output short circuit 5/ current ISC- -55 -5 Channel separation 5/ CS TA= +25C 4 01 126 dB 1/ Devices supplied to this dr
41、awing have been characterized through all levels M, D, P, L, R of irradiation. However, this device is only tested at the R level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C
42、. 2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 3/ Unless otherwise specified, VS= 15
43、V, RS= 50 , and VCM= 0 V. 4/ Post irradiation limit. 5/ Not tested post irradiation. 6/ IVR is defined as the VCMrange used for the CMRR test. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08214 DEFENSE SUP
44、PLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outline C Terminal number Terminal symbol 1 NULL (A) 2 NULL (A) 3 -INPUT (A) 4 +INPUT (A) 5 V- (B) 6 OUTPUT (B) 7 V+ (B) 8 NULL (B) 9 NULL (B) 10 -INPUT (B) 11 +INPUT (B) 12 V- (A) 13 OUTPU
45、T (A) 14 V+ (A) NOTES: 1. Device may be operated even if insertion is reversed; this is due to inherent symmetry of pin location of amplifiers A and B. 2. V- (A) and V- (B) are internally connected via substrate resistance. FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction
46、 or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08214 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection
47、 procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordanc
48、e with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, me
