1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add conditions of IR= 15 mA for subgroups 2, 3 and make limit changes to the VR/ T test as specified under Table I. - ro 11-03-24 C. SAFFLE B Add device type 62. Make change to title block on first sheet. Make change to Table IB title description
2、 and footnote 1/. - ro 12-05-10 C. SAFFLE C Make limit changes to Reverse breakdown voltage tolerance test as specified under Table IB. Delete device class M references. - ro 13-10-02 C. SAFFLE REV SHEET REV C SHEET 15 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 1
3、1 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F
4、. SAFFLE MICROCIRCUIT, LINEAR, 2.5 V AND 5.0 V PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE, MONOLITHIC SILICON DRAWING APPROVAL DATE 10-08-18 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-09235 SHEET 1 OF 15 DSCC FORM 2233 APR 97 5962-E494-13 Provided by IHSNot for ResaleNo reproduction or
5、networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliabilit
6、y (device classes Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as show
7、n in the following example: 5962 R 09235 61 V Z A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices
8、meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 61 LM4050 Radiation hardened, 2.5 V pr
9、ecision micropower shunt voltage reference 62 LM4050 Radiation hardened, 5.0 V precision micropower shunt voltage reference 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation
10、 Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style Z GDFP1-G10 10 Flat pack with gullwing leads 1.2.5 Lead finish. The lead finish is as sp
11、ecified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Ab
12、solute maximum ratings. 1/ Reverse current 20 mA Forward current . 10 mA Power dissipation (PD) (TA= +25C) 467 mW 2/ Junction temperature (TJ) . +150C Lead temperature (soldering, 10 seconds) +260C Storage temperature . -65C to +150C Electrostatic discharge (ESD) tolerance . 2, 000 V 3/ Thermal resi
13、stance, junction-to-case (JC) . 20.87C/W Thermal resistance, junction-to-ambient (JA) 214C/W (still air) 147C/W (500 linear feet /minute air flow) 1.4 Recommended operating conditions. Reverse current : Device type 61 . 60 A to 15 mA Device type 62 . 74 A to 15 mA Ambient operating temperature range
14、 (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = .010 rads(Si)/s) . 100 krads(Si) 4/ The manufacturer supplying RHA parts on this drawing has performed a characterization test to demonstrate if the parts exhibit enhanced low dose rate sensitivity (ELDRS) accord
15、ing to MIL-STD-883 method 1019 paragraph 3.13.11. These parts have been characterized and observed to be enhanced low dose rate sensitive. However, the characterization test demonstrated the parts did pass the radiation end point parameter limits under low dose rate conditions according to MIL-STD-8
16、83 method 1019 paragraph 3.13.3.b. The manufacturer will continue to perform low dose rate lot acceptance testing on each wafer lot or wafer according to method 1019 of MIL-STD-883. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the ma
17、ximum levels may degrade performance and affect reliability. 2/ Maximum power dissipation must be de-rated at elevated temperatures and is dictated by TJ(maximum junction temperature), JA(junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at
18、 any temperature is PDmax= (TJ(max) TA) / JAor the number given in absolute maximum ratings paragraph 1.3 herein, which ever is lower. 3/ The human body model is 100 pF capacitor discharged through a 1.5 k resistor into each pin. 4/ For device types 61 and 62, these part have been tested and do demo
19、nstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition D and paragraph 3.13.3.b. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-S
20、TANDARD MICROCIRCUIT DRAWING SIZE A 5962-09235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this draw
21、ing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-88
22、3 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:
23、/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothin
24、g in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified i
25、n the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and he
26、rein for device classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufact
27、urer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiat
28、ion parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 M
29、arking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For R
30、HA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09235 DLA
31、LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. 1/ 2/ Test Symbol Conditions -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Reverse breakdown voltage tolerance VRI
32、R= 60 A 1 61 2.5 mV IR= 100 A 2.5 IR= 1 mA 3.75 IR= 10 mA 10 IR= 15 mA 13 IR= 60 A 2 5 IR= 100 A 5 IR= 1 mA 6.25 IR= 10 mA 12.5 IR= 15 mA 14 IR= 60 A 3 4.5 IR= 100 A 4.5 IR= 1 mA 5.75 IR= 10 mA 13 IR= 15 mA 17.5 Minimum operating current IRMIN1 61 60 A 2,3 65 See footnotes at end of table. Provided
33、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - continued. 1/ 2/
34、Test Symbol Conditions -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Average reverse breakdown 3/ voltage temperature coefficient VR/ T IR= 60 A, 25C TA 125C 2 61 15 ppm/C IR= 100 A, 25C TA 125C 16 IR= 1 mA, 25C TA 125C 18 IR= 10 mA, 25C TA 125C 20 IR= 15
35、 mA, 25C TA 125C 22 IR= 60 A, -55C TA 25C 3 18 IR= 100 A, -55C TA 25C 19 IR= 1 mA, -55C TA 25C 22 IR= 10 mA, -55C TA 25C 32 IR= 15 mA, -55C TA 25C 45 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT
36、 DRAWING SIZE A 5962-09235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - continued. 1/ 2/ Test Symbol Conditions -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min
37、Max Reverse breakdown voltage tolerance VRIR= 74 A 1 62 5.0 mV IR= 100 A 5.0 IR= 1 mA 8 IR= 10 mA 18 IR= 15 mA 20 IR= 74 A 2 10 IR= 100 A 10 IR= 1 mA 12 IR= 10 mA 22.5 IR= 15 mA 28 IR= 74 A 3 9 IR= 100 A 9 IR= 1 mA 11.5 IR= 10 mA 29 IR= 15 mA 37 Minimum operating current IRMIN1 62 70 A 2,3 74 See fo
38、otnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance c
39、haracteristics - continued. 1/ 2/ Test Symbol Conditions -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Average reverse breakdown 3/ voltage temperature coefficient VR/ T IR= 74 A, 25C TA 125C 2 62 23 ppm/C IR= 100 A, 25C TA 125C 25 IR= 1 mA, 25C TA 125C 2
40、8 IR= 10 mA, 25C TA 125C 35 IR= 15 mA, 25C TA 125C 40 IR= 74 A, -55C TA 25C 3 25 IR= 100 A, -55C TA 25C 29 IR= 1 mA, -55C TA 25C 34 IR= 10 mA, -55C TA 25C 45 IR= 15 mA, -55C TA 25C 60 1/ RHA devices supplied to this drawing are characterized and tested through all levels M, D, P, L, and R of irradia
41、tion. Pre and Post irradiation values are identical unless otherwise specified in Table IB. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ These parts have been tested and do demonstrate enhanced low dose rate effects. Radiation end point limits for the note
42、d parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition D and paragraph 3.13.3.b with an overtest factor of 1.5X. For 100 krad, units are tested to 150 krad and still meet the radiation end point limits. 3/ This parameter not tested post irradiation. Provided
43、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 TABLE IB. Post irradiation (low dose rate) reference voltage drift l
44、imits. Test Symbol Conditions RHA level designators Group A subgroups Limits Device type 61 Min Max Reverse breakdown 1/ voltage tolerance VRIR= 60 A P 1 +0.42% L +0.67% R +1.75% IR= 100 A P +0.42% L +0.67% R +1.75% IR= 1 mA P +0.42% L +0.67% R +1.75% IR= 10 mA P +0.42% L +0.67% R +1.75% IR= 15 mA P
45、 +0.42% L +0.67% R +1.75% See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 10 DSCC FORM 2234 APR 97 TA
46、BLE IB. Post irradiation (low dose rate) reference voltage drift limits continued. Test Symbol Conditions RHA level designators Group A subgroups Limits Device type 62 Min Max Reverse breakdown 1/ voltage tolerance VRIR= 74 A P 1 +0.42% L +0.67% R +1.75% IR= 100 A P +0.42% L +0.67% R +1.75% IR= 1 mA
47、 P +0.42% L +0.67% R +1.75% IR= 10 mA P +0.42% L +0.67% R +1.75% IR= 15 mA P +0.42% L +0.67% R +1.75% 1/ Post irradiation reference voltage tolerance limit is the maximum allowable change from the pre irradiation measured value. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09235 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 11 DSCC FORM 2234 APR 97 Device types 61 and 62 Case outline Z Terminal number Ter
