1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Table IA; For IInRipple Current (IRIP) test. In Group A subgroups column correct footnote from “6/” to “7/” two places. gc 11-11-02 Charles F. Saffle B Table IA: Efficiency test, for device type 02 correct minimum efficiency from “80” to “79” per
2、cent and for device type 03 correct minimum efficiency from “81” to “80” percent. For Vout Step Line Transient remove “4/”. gc 11-12-14 Charles F. Saffle REV SHEET REV B B SHEET 15 16 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gre
3、g Cecil DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING CHECKED BY Greg Cecil COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Charles F. Saffle MICROCIRCUIT, HYBRID, LINEAR, DUAL CHANNEL, DC-DC CONVERTER AND AGENCIES O
4、F THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 11-10-25 AMSC N/A REVISION LEVEL SIZE A CAGE CODE 67268 5962-11214 B SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E112-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE
5、 A 5962-11214 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and
6、are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 P 11214 01 K X X Federal RHA Device Device Case Lead stock class designator type class ou
7、tline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash
8、(-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 SVFL2805D DC-DC Converter, 100 W, 5 V Outputs 02 SVFL2812D DC-DC Converter, 110 W, 12 V Outputs 03 SVFL2815D DC-DC Converter, 120 W, 15 V
9、Outputs 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D).
10、 The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class available. This level is intended for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliab
11、ility devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic
12、and conformance inspections (Group A, B, C, and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document s
13、hould be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. Provided by IHSNot for ResaleNo
14、 reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11214 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follow
15、s: Outline letter Descriptive designator Terminals Package style X See figure 1 12 Side Lead, Flange Mount 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Input Voltage (Continuous) . +40 V dc Input Voltage (Transient, 1 second) +50 V dc Po
16、wer Dissipation (PD, Full Load, TCASE= +125C) . 40 W Output Power (Dependant on Output Voltage) . 120 W Junction Temperature Rise to Case . +15 C Storage Temperature -65 C to +150 C Lead Solder Temperature (10 seconds) . +270 C 1.4 Recommended operating conditions. Input Voltage Range +16 V dc to +4
17、0 V dc Case Operating Temperature Range (TC) . -55 C to +125 C 1.5 Radiation features. Maximum total dose available (dose rate = 30 - 300 rad(Si)/s) . 30 krad (Si) 3/ Maximum total dose available (dose rate 10 mrad(Si)/s) LDR: Components: 30 krad (Si) 3/ 4/ Hybrid: 5/ Single event phenomenon (SEP) e
18、ffective linear energy threshold (LET): SEL, SEB, SEGR, SEFI . 44 MeV-cm2/mg 2/ 6/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specif
19、ied, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard
20、 for Electronic Component Case Outlines. 1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Single event performance is tested with minor transients only; no dropouts, sh
21、utdowns, latch up or burn out. 3/ Bipolar device types may degrade from displacement damage from radiation which could affect RHA levels. These device types have not been characterized for displacement damage. 4/ Components: The bipolar, BiCMOS linear and mixed signal semiconductor components have b
22、een tested to High Dose Rate (HDR) Condition C (30-300 rad(Si)/s) and Low Dose Rate (LDR) per condition D of MIL-STD-883, method 1019. The difference between HDR and LDR test results has been compared to determine if the semiconductors exhibit ELDRS effect. Low dose rate sensitivity was not demonstr
23、ated. 5/ Hybrid: Hybrid devices have been tested at HDR. LDR testing on the device has not been completed. 6/ See table IB. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11214 DLA LAND AND MARITIME COLUMBUS
24、, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from th
25、e Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F 1192 - Standard Guide f
26、or the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, how
27、ever, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 may includ
28、e the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance requirements as defined in MI
29、L-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall
30、 be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure circuits. The radiation exposure circuits s
31、hall be as specified on figure 3. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrica
32、l test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the ma
33、nufacturers vendor similar PIN may also be marked. 3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sa
34、mple, for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (D
35、LA Land and Maritime-VA) upon request. 3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DLA Land and Maritime-VA shall affirm that the manufacturers product
36、meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted w
37、ithout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11214 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as m
38、odified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply: a. Burn-in test, metho
39、d 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to either DLA Land and Maritime-VA or the acquiring activity upon request. Also, the test circuit shall specify the inpu
40、ts, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TAas specified in accordance with table I of method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein, exc
41、ept interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. c. PIND testing, method 2020, condition A, of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE
42、A 5962-11214 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ 4/ 5/ 6/-55C TC+125C VIN= +28 V dc 5% Full Load unless otherwise specified Group A subgroups Device type Limit
43、s Unit Min Max Output Voltage +VOUT+IOUT, -IOUT= 10 A 1 01 4.95 5.05 V dc 2,3 4.925 5.0751,2,3 7/ 4.89 5.10 +IOUT, -IOUT= 4.58 A 1 02 11.88 12.12 2,3 11.82 12.181,2,3 7/ 11.66 12.28 +IOUT, -IOUT= 4 A 1 03 14.85 15.15 2,3 14.775 15.2251,2,3 7/ 14.565 15.355 -VOUT+IOUT, -IOUT= 10 A 1 01 -4.8 -5.2 2,3
44、-4.75 -5.25 1,2,3 7/ -4.715 -5.275 +IOUT, -IOUT= 4.58 A 1 02 -11.8 -12.2 2,3 -11.52 -12.481,2,3 7/ -11.36 -12.58 +IOUT, -IOUT= 4 A 1 03 -14.8 -15.2 2,3 -14.4 -15.61,2,3 7/ -14.19 -15.73 Output Current 9/ 10/ IOUTVOUTVIN= 16 V dc to 40 V dc 1,2,3 01 14 A 02 6.4 03 5.6 VOUTRipple Voltage VRIP VOUTBW =
45、 20 Hz to 10 MHz 1,2,3 All 80 mVp-p VOUTLine Regulation VRLINE+VOUTVIN= 16 V dc to 40 V dc 1,2,3 All 20 mV -VOUTVIN= 16 V dc to 40 V dc 200 VOUTLoad Regulation VRLOAD+VOUTNo Load to Full Load 1,2,3 01 100 mV 02, 03 120 -VOUTNo Load to Full Load All 200 See footnotes at end of table. Provided by IHSN
46、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11214 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol C
47、onditions 1/ 2/ 3/ 4/ 5/ 6/-55C TC+125C VIN= +28 V dc 5% Full Load unless otherwise specified Group A subgroups Device type Limits Unit Min Max -VOUTCross Regulation -VRCRS+Load 70%, -Load 30% +Load 30%, -Load 70% 1,2,3 All 450 mV Input Current IINIOUT= 0, Inhibit 1 (see figure 2) = 0 1,2,3 All 3 mA
48、 IOUT= 0, Inhibit 2 (see figure 2) = 0 70 IOUT= 0, Inhibit 1 and 2 (see figure 2) = Open 160 IINRipple Current IRIPBW = 20 Hz to 10 MHz 1,2,3 All 80 mAp-p 1 7/ 80 2,3 7/ 140 Efficiency Eff +IOUT, -IOUT= 10 A 1,2,3 01 73 % +IOUT, -IOUT= 4.58 A 02 79 +IOUT, -IOUT= 4 A 03 80 Isolation ISO 500 V dc, TC= +25C 1 All 100 M Capacitive Load 10/ CLVOUTNo effect on DC performance, TC= +25C 1 All 500 F Short Circuit Power Dissipation PDShort Circuit 1,2,3 All 50 W Switchin
