1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Paragraph 1.3: Remove “Power dissipation” and “Output power”. Table IA: “Input current tests”, Correct “Inhibit (Pin 1)” to “Inhibit (Pin 2)”. Table IA: remove duplicate footnote 4/ reference from “VOUTStep Line Transient” test. Table IA: Remove
2、footnote 11/ reference from “Start Up Delay” test. Figure I case outline X, correct dimensions for symbols A, B, and C. Figure I case outline Y, correct dimensions for symbols A, C, D, and E. Figure 2, “Terminal symbols”: correct terminal symbols for terminals 3, 5, and 6. Remove “Figure 3 Radiation
3、 exposure circuits”. -gc 13-12-03 Charles F. Saffle REV SHEET REV A A A A SHEET 15 16 17 18 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Greg Cecil DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING CHECKED BY Greg Cecil COLUMBUS,
4、OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Charles F. Saffle MICROCIRCUIT, HYBRID, LINEAR, DUAL CHANNEL, DC-DC CONVERTER AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 11-10-25 AMSC N/A REVISION LEVEL A SIZE A
5、CAGE CODE 67268 5962-11223 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E074-14 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11223 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC
6、FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation
7、 hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 P 11223 01 K X X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.
8、2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circui
9、t function as follows: Device type Generic number Circuit function 01 SVTR2805D DC-DC converter, 30W, 5V output 02 SVTR2812D DC-DC converter, 40W, 12V output 03 SVTR2815D DC-DC converter, 40W, 15V output 1.2.3 Device class designator. This device class designator shall be a single letter identifying
10、 the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest re
11、liability class available. This level is intended for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level
12、 uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C, and D). E Designates devices which are based upon one of the
13、 other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D
14、Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A
15、5962-11223 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 10 Dual-in-line Y See fi
16、gure 1 10 Dual-in-line Flange mount 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Input voltage (continuous) +50 V dc Input voltage (transient, 1 second) . +80 V dc Junction temperature rise to case +15C Storage temperature range -65C to
17、+150C Lead temperature (soldering, 10 seconds) +270C 1.4 Recommended operating conditions. Input voltage range +15 V dc to +50 V dc Case operating temperature range (TC) -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 30 - 300 rad(Si)/s) . 30 krad (Si) 3/ Maximum tota
18、l dose available (dose rate 10 mrad(Si)/s) LDR: Components: . 30 krad (Si) 3/ 4/ Hybrid: . 5/ Single event phenomenon (SEP) effective linear energy threshold (LET): SEL, SEB, SEGR, SEFI 44 MeV-cm2/mg 2/ 6/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following
19、specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38534 - Hybrid Microcircuits, General Specificati
20、on for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines. 1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the maximum levels may de
21、grade performance and affect reliability. 2/ Single event performance is tested with minor transients only; no dropouts, shutdowns, latch up or burn out. 3/ Bipolar device types may degrade from displacement damage from radiation which could affect RHA levels. These device types have not been charac
22、terized for displacement damage. 4/ Components: The bipolar, BiCMOS linear and mixed signal semiconductor components have been tested to High Dose Rate (HDR) Condition C (30-300 rad(Si)/s) and Low Dose Rate (LDR) per condition D of MIL-STD-883, method 1019. The difference between HDR and LDR test re
23、sults has been compared to determine if the semiconductors exhibit ELDRS effect. Low dose rate sensitivity was not demonstrated. 5/ Hybrid: Hybrid devices have been tested at HDR. LDR testing on the device has not been completed. 6/ See table IB. Provided by IHSNot for ResaleNo reproduction or netwo
24、rking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11223 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard M
25、icrocircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following documents form a part of this document to
26、the extent specified herein. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. 2.3 Order of precedence. In the event of a conflict between the text of this drawi
27、ng and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device c
28、lasses D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 may include the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate
29、, modify or optimize the tests and inspections herein, however the performance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class
30、. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connect
31、ions shall be as specified on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characte
32、ristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The
33、 electrical tests for each subgroup are defined in table I. 3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked. 3.6 Data. In addit
34、ion to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should inclu
35、de a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (DLA Land and Maritime-VA) upon request. 3.7 Certificate of compliance.
36、 A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DLA Land and Maritime-VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 C
37、ertificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962
38、-11223 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as modified in the device manufacturers Quality Management (QM) plan. The
39、 modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test cir
40、cuit shall be maintained by the manufacturer under document revision level control and shall be made available to either DLA Land and Maritime-VA or the acquiring activity upon request. Also, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accorda
41、nce with the intent specified in method 1015 of MIL-STD-883. (2) TAas specified in accordance with table I of method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional
42、at the discretion of the manufacturer. c. PIND testing, method 2020, condition A, of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11223 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION
43、 LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ 4/ 5/ 6/ -55C TC+125C VIN= +28 V dc 5% Full Load unless otherwise specified Group A subgroups Device type Limits Unit Min Max Output Voltage +VOUT+IOUT, -IOUT= 3 A 1 01 4.95 5.05
44、V dc 2,3 4.925 5.075 1,2,3 7/ 4.89 5.10 +IOUT, -IOUT= 1.67 A 1 02 11.88 12.12 2,3 11.82 12.18 1,2,3 7/ 11.66 12.3 +IOUT, -IOUT= 1.33 A 1 03 14.85 15.15 2,3 14.70 15.30 1,2,3 7/ 14.565 15.4 -VOUT+IOUT, -IOUT= 3 A 1 01 -4.8 -5.2 2,3 -4.7 -5.3 1,2,3 7/ -4.665 -5.325 +IOUT, -IOUT= 1.67 A 1 02 -11.8 -12.
45、2 2,3 -11.64 -12.36 1,2,3 7/ -11.48 -12.48 +IOUT, -IOUT= 1.33 A 1 03 -14.7 -15.3 2,3 -14.55 -15.45 1,2,3 7/ -14.415 -15.55 Output Current 8/ 9/ IOUTVIN= 15 V dc to 50 V dc 1,2,3 01 4.2 A 02 2.33 03 1.87 VOUTRipple Voltage VRIP BW = 20 Hz to 10 MHz 1,2,3 01 60 mVp-p 02,03 50 VOUTLine Regulation VRLIN
46、E+VOUT VIN= 16 V dc to 40 V dc 1,2,3 All 20 mV -VOUT VIN= 16 V dc to 40 V dc 200 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11223 DLA LAND AND MARITIME COLUMBUS, OHIO 43218
47、-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ 3/ 4/ 5/ 6/ -55C TC+125C VIN= +28 V dc 5% Full Load unless otherwise specified Group A subgroups Device type Limits Unit Min Max VOUTLoad Regulation VRLOAD+
48、VOUT No Load to Full Load 1,2,3 All 50 mV -VOUT No Load to Full Load 200 -VOUTCross Regulation -VRCRS +Load 70%, -Load 30% +Load 30%, -Load 70% 1,2,3 All 650 mV Input Current IINIOUT= 0, Inhibit (Pin 2) = 0 1,2,3 All 6 mA IOUT= 0, Inhibit (Pin 2) = open 90 IINRipple Current IRIPBW = 20 Hz to 10 MHz 1,2,3 All 50 mAp-p 1 7/ 50 2,3 7/ 70 Efficiency Eff +IOUT, -IOUT= 3 A 1,2,3 01 73 % +IOUT, -IOUT= 1.67 A 02 78 +IOUT, -IOUT= 1.33 A 03 78 Isolation ISO 500 V dc, TC= +25C 1 All 10
