DLA SMD-5962-89539 REV C-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER MONOLITHIC SILICON.pdf

上传人:deputyduring120 文档编号:699462 上传时间:2019-01-01 格式:PDF 页数:19 大小:164.57KB
下载 相关 举报
DLA SMD-5962-89539 REV C-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER MONOLITHIC SILICON.pdf_第1页
第1页 / 共19页
DLA SMD-5962-89539 REV C-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER MONOLITHIC SILICON.pdf_第2页
第2页 / 共19页
DLA SMD-5962-89539 REV C-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER MONOLITHIC SILICON.pdf_第3页
第3页 / 共19页
DLA SMD-5962-89539 REV C-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER MONOLITHIC SILICON.pdf_第4页
第4页 / 共19页
DLA SMD-5962-89539 REV C-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER MONOLITHIC SILICON.pdf_第5页
第5页 / 共19页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add vendor CAGE F8859. Add device Class V criteria. Add delta limits, table III. Add case outline X. Update boilerplate. Editorial changes throughout. lgt 00-12-28 Raymond Monnin B Change lead temperature for case outline X in section 1.3. Add se

2、ction 1.5, radiation features. Correct input voltage levels for waveforms in figure 4. Update the boilerplate to MIL-PRF-38535 requirements and to include radiation hardness assurance requirements. Editorial changes throughout. jak 04-10-21 Thomas M. Hess C Update boilerplate paragraphs to the curre

3、nt MIL-PRF-38535 requirements. - LTG 11-04-20 David J. Corbett REV SHET REV C C C SHEET 15 16 17 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jeffery Tunstall DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil ST

4、ANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Monica L. Poelking APPROVED BY Charles Reusing MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT MULTIPLEXER, MONOLITHIC SILICON DRAWING APPROVAL DATE 89-09

5、-12 REVISION LEVEL C SIZE A CAGE CODE 67268 5962-89539 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E138-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89539 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 RE

6、VISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in th

7、e Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 89539 01 E A Federal stock class designator RHA designator (see 1.2.1) Device

8、type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) / /Drawing number For device class V: 5962 F 89539 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) /Drawing n

9、umber 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA desi

10、gnator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC157 Quad 2-input multiplexer 1.2.3 Device class designator. The device class designator is a single letter identifying

11、the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor

12、self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,

13、-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89539 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E

14、 GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absol

15、ute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current (IIK, IOK) . 20 mA DC output current 50 mA DC VCCor GND current (per pin) . 50 mA S

16、torage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD) . 500 mW Lead temperature (soldering, 10 seconds): Case outline X . +260C All other case outlines except case X +245C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) . +175C 4/ 1.4 R

17、ecommended operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCCase operating temperature range (TC) . -55C to +125C Input rise or fall times: VCC= 3.6 V 0 to 8 ns VCC= 5.5 V 0 to 8 n

18、s 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 300 krads (Si) Single Event Latchup (SEL) occurs at LET (see 4.4.4.2) . 93 MeV-cm2/mg 6/ Single Event Upset (SEU) occurs at LET (see 4.4.4.2) 93 MeV-cm2/mg 6/ 1/ Stresses above the absolute maximu

19、m rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange an

20、d case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention an

21、d battery back-up systems. Data retention implies no input transition and no stored data loss with the following conditions: VIH 70% VCC, VIL 30% VCC, VOH 70% VCC -20A, VOL 30% VCC 20 A. 6/ Limits obtained during Technology characterization/Qualification, guaranteed by design or process, but not pro

22、duction tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89539 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C S

23、HEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in

24、the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEP

25、ARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building

26、4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)

27、JEDEC Standard No. 20 - Standard for Description of 54/74ACXXXXX and 54/74ACTXXXXX Advanced High-Speed CMOS Devices. JEDEC Standard No. 78 - IC Latch-Up Test. (Copies of these documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 3103 North 10thStree

28、t, Suite 240-S Arlington, VA 22201). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exempt

29、ion has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall n

30、ot affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction,

31、and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall

32、 be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWIN

33、G SIZE A 5962-89539 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit

34、shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performan

35、ce characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgrou

36、p are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking

37、the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark.

38、 The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be req

39、uired from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The ce

40、rtificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-P

41、RF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of cha

42、nge for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and

43、 Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class

44、M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89539 DLA LAND AND MARITIME COLUMBUS

45、, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +3.0 V VCC +5.5 V unless otherwise specified Device type and device class VCCGroup A subgroups Limits 4/ U

46、nitMin Max Positive input clamp voltage 3022 VIC+For input under test, IIN= 1.0 mA All V 0.0 V 1 0.4 1.5 V Negative input clamp voltage 3022 VIC-For input under test, IIN= -1.0 mA All V Open 1 -0.4 -1.5 V High level output voltage 3006 VOH 5/ VIN= VIHminimum or VILmaximum IOH= -50 A All All 3.0 V 1,

47、 2, 3 2.9 V All All 4.5 V 4.4 All All 5.5 V 5.4 VIN= VIHminimum or VILmaximum IOH= -12 mA All All 3.0 V 2.4 VIN= VIHminimum or VILmaximum IOH= -24 mA All All 4.5 V 3.7 All All 5.5 V 4.7 VIN= VIHminimum or VILmaximum IOH= -50 mA All All 5.5 V 3.85 Low level output voltage 3007 VOL 5/ VIN= VIHminimum

48、or VILmaximum IOL= 50 A All All 3.0 V 1, 2, 3 0.1 V All All 4.5 V 0.1 All All 5.5 V 0.1 VIN= VIHminimum or VILmaximum IOL= 12 mA All All 3.0 V 0.5 VIN= VIHminimum or VILmaximum IOL= 24 mA All All 4.5 V 0.5 All All 5.5 V 0.5 VIN= VIHminimum or VILmaximum IOL= 50 mA All All 5.5 V 1.65 High level input voltage VIH6/ All All 3.0 V 1, 2, 3 2.1 V All All 4.5 V 3.15 All All 5.5 V 3.85 Low level input voltage VIL6/ All All 3.0 V 1, 2, 3 0.9 V All All 4.5 V 1.35 All All 5.5 V 1.65 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted w

展开阅读全文
相关资源
猜你喜欢
  • ASTM D4092-2007(2013) Standard Terminology for Plastics Dynamic Mechanical Properties《塑料标准术语 动力机械性能》.pdf ASTM D4092-2007(2013) Standard Terminology for Plastics Dynamic Mechanical Properties《塑料标准术语 动力机械性能》.pdf
  • ASTM D4093-1995(2005)e1 Standard Test Method for Photoelastic Measurements of Birefringence and Residual Strains in Transparent or Translucent Plastic Materials《透明或半透明塑性材料中双折射及残余应变.pdf ASTM D4093-1995(2005)e1 Standard Test Method for Photoelastic Measurements of Birefringence and Residual Strains in Transparent or Translucent Plastic Materials《透明或半透明塑性材料中双折射及残余应变.pdf
  • ASTM D4093-1995(2010) Standard Test Method for Photoelastic Measurements of Birefringence and Residual Strains in Transparent or Translucent Plastic Materials《透明或半透明塑性材料中双折射及残余应变的光.pdf ASTM D4093-1995(2010) Standard Test Method for Photoelastic Measurements of Birefringence and Residual Strains in Transparent or Translucent Plastic Materials《透明或半透明塑性材料中双折射及残余应变的光.pdf
  • ASTM D4093-1995(2014) Standard Test Method for Photoelastic Measurements of Birefringence and Residual Strains in Transparent or Translucent Plastic Materials《透明或半透明塑性材料中双折射及残余应变的光.pdf ASTM D4093-1995(2014) Standard Test Method for Photoelastic Measurements of Birefringence and Residual Strains in Transparent or Translucent Plastic Materials《透明或半透明塑性材料中双折射及残余应变的光.pdf
  • ASTM D4094-2000 Standard Test Method for Acid Content of Ethylene-Acrylic Acid Copolymers《乙烯-丙烯酸酸性共聚物的酸含量的标准试验方法》.pdf ASTM D4094-2000 Standard Test Method for Acid Content of Ethylene-Acrylic Acid Copolymers《乙烯-丙烯酸酸性共聚物的酸含量的标准试验方法》.pdf
  • ASTM D4095-1997(2002) Standard Practice for Use of the Refractometer for Determining Nonvolatile Matter (Total Solids) in Floor Polishes《测定地板擦亮剂中的不挥发物质(总的固体物质)用折射计的使用规程》.pdf ASTM D4095-1997(2002) Standard Practice for Use of the Refractometer for Determining Nonvolatile Matter (Total Solids) in Floor Polishes《测定地板擦亮剂中的不挥发物质(总的固体物质)用折射计的使用规程》.pdf
  • ASTM D4095-1997(2008) Standard Practice for Use of the Refractometer for Determining Nonvolatile Matter (Total Solids) in Floor Polishes《测定地板擦亮剂中的不挥发物质(总的固体物质)用折射计的标准实施规程》.pdf ASTM D4095-1997(2008) Standard Practice for Use of the Refractometer for Determining Nonvolatile Matter (Total Solids) in Floor Polishes《测定地板擦亮剂中的不挥发物质(总的固体物质)用折射计的标准实施规程》.pdf
  • ASTM D4095-1997(2014) Standard Practice for Use of the Refractometer for Determining Nonvolatile Matter &40 Total Solids&41 in Floor Polishes《测定地板擦亮剂中的不挥发物质 (总的固体物质) 用折射计的标准实施规程》.pdf ASTM D4095-1997(2014) Standard Practice for Use of the Refractometer for Determining Nonvolatile Matter &40 Total Solids&41 in Floor Polishes《测定地板擦亮剂中的不挥发物质 (总的固体物质) 用折射计的标准实施规程》.pdf
  • ASTM D4096-1991(2003) Standard Test Method for Determination of Total Suspended Particulate Matter in the Atmosphere (High-Volume Sampler Method)《空气中悬浮粒子的测定方法(大容器取样器法)》.pdf ASTM D4096-1991(2003) Standard Test Method for Determination of Total Suspended Particulate Matter in the Atmosphere (High-Volume Sampler Method)《空气中悬浮粒子的测定方法(大容器取样器法)》.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1