DLA SMD-5962-89973 REV H-2009 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER WIDEBAND FAST SETTLING HIGH GAIN MONOLITHIC SILICON.pdf

上传人:lawfemale396 文档编号:699711 上传时间:2019-01-01 格式:PDF 页数:11 大小:75.53KB
下载 相关 举报
DLA SMD-5962-89973 REV H-2009 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER WIDEBAND FAST SETTLING HIGH GAIN MONOLITHIC SILICON.pdf_第1页
第1页 / 共11页
DLA SMD-5962-89973 REV H-2009 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER WIDEBAND FAST SETTLING HIGH GAIN MONOLITHIC SILICON.pdf_第2页
第2页 / 共11页
DLA SMD-5962-89973 REV H-2009 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER WIDEBAND FAST SETTLING HIGH GAIN MONOLITHIC SILICON.pdf_第3页
第3页 / 共11页
DLA SMD-5962-89973 REV H-2009 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER WIDEBAND FAST SETTLING HIGH GAIN MONOLITHIC SILICON.pdf_第4页
第4页 / 共11页
DLA SMD-5962-89973 REV H-2009 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER WIDEBAND FAST SETTLING HIGH GAIN MONOLITHIC SILICON.pdf_第5页
第5页 / 共11页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add case outline 2. Make changes to TC(VIO), PSRR, +RIN, VOUT, LSBW, GFPL, GFPH, GFR, NF, INV, SR, TRS, TRL, tests and footnote 1/ as specified under Table I. Delete subgroups 5 and 6 from final electrical test parameters as specified under Table

2、 II. Changes in accordance with notice of revision 5962-R309-92. 93-02-10 M. A. FRYE B Make changes to TC(+IIN) and TC(-IIN) tests as specified under Table I. Changes in accordance with notice of revision 5962-R167-93. 93-06-11 M. A. FRYE C Make changes to CMRR, NF, INV tests and delete footnote 3/

3、entirely as specified under Table I. Changes in accordance with notice of revision 5962-R013-95. 94-11-03 M. A. FRYE D Delete subgroup 4 from final electrical test parameters as specified under Table II. Changes in accordance with notice of revision 5962-R132-95. 95-05-17 M. A. FRYE E Delete CAGE co

4、de 64762. Make change to paragraph 1.3, VOUTand HD3 tests as specified under table I. Add new footnote to table I. Redrawn. - ro 97-09-30 R. MONNIN F Make change to IIN, VOUT, SSBW, GFPL, GFPH, GFR, HD2, HD3, and SR tests as specified under table I. - ro 99-01-21 R. MONNIN G Drawing updated to refle

5、ct current requirements. - ro 03-04-03 R. MONNIN H Update boilerplate paragraphs. - ro 09-09-01 C. SAFFLE THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY RICK C. OFFICER DEFENSE

6、 SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY SANDRA B. ROONEY APPROVED BY CHARLES E. BESORE MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER,

7、 WIDEBAND, FAST SETTLING, HIGH GAIN, MONOLITHIC SILICON DRAWING APPROVAL DATE 91-08-09 AMSC N/A REVISION LEVEL H SIZE A CAGE CODE 67268 5962-89973 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E472-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDA

8、RD MICROCIRCUIT DRAWING SIZE A 5962-89973 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-3

9、8535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-89973 01 P A Drawing number Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Dev

10、ice type Generic number Circuit function 01 CLC401 Operational amplifier, wideband, fast settling, high gain 02 EL2171 Operational amplifier, wideband, fast settling, high gain 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive des

11、ignator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Supply voltage (VS) 7 V dc Output current (IOUT) 70 mA Maximum power dissip

12、ation (PD) 1.2 W Junction temperature (TJ) . +175C Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) . +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) +100C/W 1.4 Recommended operating conditions. Supply

13、 voltage (VS) 5 V dc Gain range +7 to +40 and -1 to -40 Ambient operating temperature range (TA) -55C to +125C Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89973 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OH

14、IO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of the

15、se documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electro

16、nic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk

17、, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulati

18、ons unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Ma

19、nufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-3853

20、5. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in acco

21、rdance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in a

22、ccordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full amb

23、ient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part sha

24、ll be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. 3.5.1 Certification/compl

25、iance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify when the QML flow option is used. Provide

26、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89973 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 4 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Sym

27、bol Conditions 1/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Open loop characteristics. Input bias current noninverting +IIN1,2 All -20 +20 A 3 -36 +36 Input bias current inverting -IIN1 All -30 +30 A 2 -40 +40 3 -46 +46 Average +input bias current drif

28、t TC(+IIN) 2/ 1,2,3 All -200 +200 nA/C Average -input bias current drift TC(-IIN) 2/ 1,2,3 All -200 +200 nA/C Input offset voltage VIO1 01 -6 +6 mV 2 -11 +11 3 -10 +10 1 02 -6 +62,3 -11 +11 Average offset voltage drift TC(VIO) 2/ 1,2,3 All -50 +50 V/C Supply current ISNo load 1,2,3 All 21 mA Power s

29、upply rejection ratio PSRR +VS= +4.5 V to +5.0 V, -VS= -4.5 V to -5.0 V 1,2,3 01 50 dB VS= 4.5 V to 5.0 V 02 50 Input resistance +RIN2/ 1,2 All 100 k 3 50 Output impedance (DC) ROUT2/ 1,2,3 All 0.3 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted wi

30、thout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89973 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA+125C unless otherwise specif

31、ied Group A subgroups Device type Limits Unit Min Max Open loop characteristics continued. Input capacitance CINSee 4.3.1c, TA= +25C 4 All 2.5 pF Common mode rejection ratio CMRR 2/ 4,5,6 01 50 dB 02 40 Output voltage swing VOUTNo load 1,2 All 2.9 V 3 2.7RL= 100 1,2,3 02 3.2 Linear phase deviation L

32、PD At 50 MHz, 4,6 02 1.0 VOUT 2.0 VPP5 1.5 Closed loop AC characteristics. Small signal bandwidth SSBW -3 dB bandwidth, 3/ 4,6 All 100 MHz VOUT 2 VPP5 70 Large signal bandwidth LSBW -3 dB bandwidth, 2/ 4,6 All 65 MHz VOUT 4 VPP5 55 Gain flatness peaking GFPL At 0.1 MHz to 25 MHz, 3/ VOUT 2 VPP4,5,6

33、All 0.1 dB Gain flatness peaking GFPH At 25 MHz, 3/ VOUT 2 VPP4,5,6 All 0.2 dB Gain flatness rolloff GFR 0.1 MHz to 50 MHz, 3/ 4,6 01 1.0 dB VOUT 2 VPP5 1.3 4,6 02 1.05 1.3 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-

34、,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89973 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA+125C unless otherwise specified Group A subgroups Dev

35、ice type Limits Unit Min Max Distortion 2nd harmonic distortion HD2 2 VPPat 20 MHz 3/ 4,5,6 All -35 dBc 3 rd harmonic distortion HD3 2 VPPat 20 MHz 3/ 4,6 All -50 dBc 5 -45 Equivalent input noise Noise floor 1.0 MHz NF 2/ 4/ 4,6 All -155 dBm 5 -154 (1 Hz) Integrated noise, INV 2/ 4/ 4,6 All 50 V 1.0

36、 MHz to 150 MHz 5 55 Time domain response Slew rate 2/ SR AV= +2, measured at 1 V at 6 V step 9,11 01 800 V/s 10 700AV= +2, measured at -0.5 V at +0.5 V step 9,11 02 800 10 700Rise and fall time TRS 2 V step 2/ 9,11 All 3.5 ns 10 5.0TRL 4 V step 2/ 9,11 7.0 10 8.0Settling time to 0.1 % TSP 2 V step

37、at 0.1 % 2/ 9,10,11 All 15 ns Overshoot OS 2 V step 2/ 9,10,11 All 10 % 1/ Unless otherwise specified, RL= 100 , VS= 5 V dc, and AV= +20. Also, for device type 01, RG= 78.7 , and for device type 02, RG= 1.5 k. 2/ If not tested, shall be guaranteed to the limits specified in table I herein. 3/ This p

38、arameter is tested at 100 percent at TA= +25C and Group A sample tested at TA= +125C and 55C. 4/ Noise tests are performed from 5 MHz to 200 MHz. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89973 DEFENSE

39、SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 7 DSCC FORM 2234 APR 97 Device types 01 and 02 Case outlines P 2 Terminal number Terminal symbol 1 NC NC 2 -INPUT NC 3 +INPUT NC 4 -VSNC 5 NC NC6 OUTPUT -INPUT 7 +VSNC 8 NC +INPUT 9 - -VS10 - NC 11 - NC 12 - NC 13 - NC 14 - OUTP

40、UT 15 - NC 16 - +VS17 - NC 18 - NC 19 - NC 20 - NC NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89973 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-

41、3990 REVISION LEVEL H SHEET 8 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DSCC-VA prior to lis

42、ting as an approved source of supply shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided with each lot of m

43、icrocircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DSCC-VA shall be required for any change that affects this drawing. 3.9 Verification and review. DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and appl

44、icable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. Screening shall be in accordance

45、with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition B. The test circuit shall be maintained by the manufacturer under document re

46、vision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. In

47、terim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. 4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 50

48、05 of MIL-STD-883 including groups A, B, C, and D inspections. The following additional criteria shall apply. 4.3.1 Group A inspection. a. Tests shall be as specified in table II herein. b. Subgroups 7 and 8 in table I, method 5005 of MIL-STD-883 shall be omitted. c. Subgroup 4 (CINmeasurement) shall be measured only for the initial test and after process or design changes which may affect input capacitance. Provided by IHSNot for ResaleNo reproduction or netwo

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1