1、SMD-5762-90644 REV A D 9999996 0084200 361 D LTR DESCRIPTION A Added new case outline Y. Added device type 02. Editorial changes throughout. DATE (YR-MO-DA) APPROVED 96-01-23 M.A. Frye REV I I I REV SHEET REV AAAAAAAAAAA 12 3 4 5 4 7 8 9 10 11 III REVISION LEVEL A SHEET REV STATUS OF SHEETS I I I 59
2、62 - 90644 SIZE CAGE CODE A 67268 SHEET 1 OF 11 PMIC N/A STANDARD M I CROC I RCU IT DRAW I NG THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A PREPARED BY Marcia B. Kelleher DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 CHECKED BY I Charl
3、es E. Besore APPROVED BY MICROCIRCUIT, LINEAR, HIGH PERFORMANCE LOW-POWER FM Michael A. Frye IF SYSTEM, MONOLITHIC SILICON DRAWING APPROVAL DATE 92-11-24 ESC FORM 193 JUL 94 5962-E264-96 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Provided by IHSNot for ResaleNo
4、 reproduction or networking permitted without license from IHS-,-,-SMD-59b2-90b44 REV A ? 99979b 0084203 2T8 ? 1.1 -. This drawing docunents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and P), and nontraditional performanc
5、e environnent (device class N). choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Uhen available, a choice of Radiation Hardness Assurance (RHA) Levels are reflected in the PIN. the user is cautioned to assure that the device is approp
6、riate for the application environment. A For device class N, 1.2 pIN. lhe PIN is as shown in the following example: 90644 Federal RHA air Device Device Case Lead 11 stock class designator twe c 1 ass outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) (see 1.2.3) / D
7、rawing number 1.2.1 RHA desimator. Device classes N, Q, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels A dash (-1 indicates a non-RHA and are marked with the appropriate RHA designator. appendix A specified RHA levels and are marked with the appropriate RHA designator. device.
8、Device class M RHA marked devices meet the MIL-PRF-38535, 1.2.2 Device tvw(s.1. lhe device type(s) identify the circuit function as follows: Device tvw Generic nunber Circuit function o1 02 605 605 High-performance low-power FM IF system -55C to +125C High-performance tow-power FM IF system -40C to
9、+85“C 1.2.3 Device class desimator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device reauirpments documentation M N Vendor self-certification to the requirements for MIL-STD-883 conpliant, non-JAN class level B microcircuits in ac
10、cordance with MIL-PRF-38535, appendix A Certification and qualification to MIL-PRF-38535 with a nontraditional performance environment I/ Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s1. lhe case outline(s) are as designated in MIL-STD-1835, JEDEC publication 95, and as
11、 follows: Outline letter DescriDtive desimator Termina lg Packase stvle R GDIP1-120 or CDIP2-120 20 Dual-in-line X CPCC2-NZO 20 Square leadless chip carrier Y MS-001AE 20 Plastic dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes N, P, and V or MIL-PR
12、F-38535, appendix A for device class M. 1/ Any device outside the traditional performance environment; e.g., an operating temperature range of -55C to +125“C and which requires hermetic packaging. I I I I 5962-90644 7N LEVEL SHEET A 2 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproductio
13、n or networking permitted without license from IHS-,-,-SMD-5962-90644 REV A m b 0084202 134 m SIZE A 5962-90644 STAN DARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 SHEET REVISION LEVEL A 3 J . 1.3 Absolute maximum ratinas. 1/ Power supply voltage (Vcc) Storage temperatur
14、e range . Lead temperature (soldering, 10 seconds) . Thermal resistance, junction-to-case (eJc): Case outlines R and X . Case out 1 ine Y . Thermal resistance, junction-to-ambient (eJA) Junction temperature (TJ) . Power dissipation (PD) 1.4 Recomnended owratina conditions. 2/ Supply voltage (Vcc) .
15、Ambient operating temperature range (TA): Device type O1 . Device type 02 . MIXER/OSC SECTION (external LO = 300 mV) Input signal frequency (fIN) Crystal osci 1 lator frequency (fosc) . Third-order intercept point: fl = 45.0 MHz; f2 = 45.06 MHz . Conversion power gain, 50 n source . IF amp gain . Li
16、miter gain Input limiting -3 dB, R17 = 5.1 Kn, test at IF AMP IN pin . Unmuted audio level, RI1 = 100 Kn, 150 pF de-emphasis Signal to noise ratio, no modulation for noise . IF SECTION SINAD sensitivity, RF level -118 dB . RCCI range, R9 = 100 KR, IF AMP WT pin . RSSI accuracy, R9 = 100 KR, IF AMP O
17、UT pin . Unmuted audio output impedance . Muted audio output impedance RF/IF SECTION (internal LO) Unmuted audio level, Vcc 4.5 V, RF level = -27 dBm System RSSI output, Vcc = 4.5 V, RF Level = -27 dBm . 2. APPLICABLE DOCUMENTS 9.0 V dc -65C to +150“C +300“c See MIL-STD-1835 25“C/W 15loc/U (test amb
18、ient, still air) 150C 165 m 6.0 V dc -55C to +125“C -40C to +85“C 500 Mhz typical 150 Mhz typical -10 dBm typical -1.7 dB typical 39.7 dB typical 62.5 dB typical -113 dBm typical 480 mVRMS-typical 16 dB typical 73 dB typical 90 dB typical 21.5 dB typical 58 Kn typical 58 Kn typical 450 mVRMS typi ca
19、 1 4.3 V typical 2.1 Government SDecification. standards. and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and sup
20、plement thereto, cited in the solitation. SPECIFICATION Unless otherwise specified, the issues of these documents MILITARY MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-973 - C
21、onfiguration Management. MIL-STD-1835 - Microcircuit Case Outlines. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-90644 REV A 9999996 0084203 070 D HANDBOOKS MI LI TARY MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDIS). MIL-HDB
22、K-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 40, Philadelphia, PA 19111-5094.) 2.2 Non-Govermient w blications. The following documen
23、ts form a part of this document to the extent specified herein. of the DODISS cited in the solicitation. are the issues of the documents cited in the solicitation. Unless otherwise Specified, the issues of the documents which are DoD adopted are those listed in the issue Unless otherwise specified,
24、the issues of documents not listed in the DODISS ELECTRONICS INDUSTRIES ASSOCIATION CEIA) JEOEC Publication 95 - Registered and Standard Outlines for Semiconductor Devices. (Applications for copies should be addressed to the Electronic Industries Association, 2500 Ui lson Boulevard, Ar 1 i ngton, VA
25、 22201 -3834). (Non-government standards and other publications are normally available from the organizations that prepare or distribute the documents. services). 2.3 Order of Drecedence. herein, the text of this drawing takes precedence. regulations unless a specific exemption has been obtained. Th
26、ese docunents also may be available in or through libraries or other informational In the event of a conflict between the text of this drawing and the references cited Nothing in this document, however, supersedes applicable laws and 3. REQUIREMENTS 3.1 Item reauirements. The individual item require
27、ments for device classes N, Q, and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (OM) plan. modification in the QM plan shall not affect the form, fit, or function as described herein. requirements for device class M
28、 shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. The The individual item 3.2 Desiqn. construction. and Dhhvsical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device
29、 classes N, Q, and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s1. The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. 3.2.3 Test circuit. 3.3 Electrical Derformance characteristics and Dostirradiation Ciarameter limits. The
30、terminal connections shall be as specified on figure 1. The test circuit shall be as specified on figure 2. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating t
31、emperature range. The electrical tests for each subgroup are defined in table I. 3.4 Electrical test rwuirements. The electrical test requirements shall be the subgroups specified in table II. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN
32、 may also be marked as listed in MIL-HDBK-103. to space limitations, the manufacturer has the option of not marking the 115962-11 on the device. this option, the RHA designator shall still be marked. with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A
33、. For packages where marking of the entire SMD PIN number is not feasible due For RHA product using Marking for device classes N, Q, and V shall be in accordance 3.5.1 Certification/comDliance mark. The certification mark for device classes N, Q, and V shall be a tQML1 or The compliance mark for dev
34、ice class M shall be a “C“ as required in MIL-PRF-38535, as required in MIL-PRF-38535. appendix A. I SIZE I I 5962-90644 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 . DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or net
35、working permitted without license from IHS-,-,-SMD-5962-90644 REV A 9399796 0084204 TO7 Icc V V TABLE I. Electrical wrformance characteristics. 1, 2, 3 01, 02 3.8 7.0 mA ON 1, 2, 3 01, 02 1.7 V OFF 1 .o Test Noise figure at 45 MHz NF DC current drain Mute switch input threshold IY 9, 10, 11 01, 02 7
36、.0 dB Conditions unless otherwise specified I Group A I Devv I Miymi,ts Y, I Unit symboL I TA:I/ subgroups Conversion power gain CG RF input resistance RRFI RF input capacitance CRFI RMO Mixer output resistance Y 10, 7.0 dB Matched 14.5 dBv step-up 9, IO, 11 01, 02 7 17 dB 4/ Single-ended input Y 9,
37、 10, 11 01, O2 3.0 kn 9 9, IO, 11 01, 02 4.0 pF MIXER OUT pin 9, 10, 11 01, 02 1.25 k RSSII RSSIZ RSC13 IF section IF level = -118 dam, 9, 10, 11 01, 02 o R9 = 100 kn, 1.5 kn input IF level = -68 dBm, 9, 10, 11 01, 02 1.7 R9 = 100 kn, 1.5 kn input IF Level = -18 dBm, 9, 10, 11 01, 02 3.5 R9 = 100 kn
38、, 1.5 kn input _ AM rejection RIN ROUT LRIN Audio level Y 9, IO, 11 01, 02 1.4 k 9 9, 10, 11 01, O2 0.85 kR 9 9, IO, 11 01, 02 1.4 kn Total harmonic distortion RSSI output IF input impedance IF output impedance Limiter inout imedance 1: 1 80 percent AM 1.0 kHz 19, 10, 11 I 01, 02 I 5, RIO = 100 kn,
39、9, IO, 11 01, 02 15 nF de-emphasis THD 9, 10, 11 01, 02 -31 5-6 I “ I/ specified. 2/ this table. 9 RF frequency = 45 Mhz + 14.5 dBV RF input step-up; IF frequency 455 kHz; Ri7 = 5.1 ka; RF level = -45 dam; FM modulation = 1 kHz with 28 kHz peak deviation. Audio output with C-message weighted filter
40、and de-emphasis capacitor. The parameters listed below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters. 4/ Se
41、e figure 3 for test circuit. All testing to be performed using worst case test conditions unless otherwise The supply voltage and operating temperature shall be as specified in paragraph 1.4. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximun, is u
42、sd in Negative current shall be defined as conventional current flow out of a device terminal. This parameter is guaranteed by design, but not tested. STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 A I 7 5962-90644 I SHEET 5 1 REVISION LEVEL A I I I DESC FORM 193A
43、 JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SflD-5762-90644 REV A W 9999996 0084205 943 Case outlines Terminal number I Device type I 01, 02 I R and X Terminal symbol 7 a 9 10 11 12 13 14 15 16 17 ia 19 20 RF IN RF BYPASS CRYSTAL OSC CRYS
44、TAL OSC MUTE IN “cc RSSI OUT MUTED AUDIO OUTPUT UNMUTED AUDIO OUTPUT . QUADRATURE INPUT LIMITER OUTPUT LIMITER DECOUPLING LIMITER DECOUPLING LIMITER IN GND IF AMP WT IF AMP DECWPLING IF AMP INPUT IF AMP DECOUPLING MIXER OUT REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 A FIGURE
45、 1. Terminal connections. SHEET 6 HUTE0 UNUUTEO OUADRATURE OUT AUDIO INPUT RSS* AUDIO OUT CRYSTAL CRYSTAL HUTE “cc RF-IN RF EYPASS OSC OSC IN OUT FIGURE 2. Block diasram. STANDARD MICROCIRCUIT DRAWING 5962-90644 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitt
46、ed without license from IHS-,-,-SND-5762-90644 REV A M 9999796 0084206 BAT IF11 J HUTE RSSI AUDIO UNHUTED LZ-8 8.5“ TO 1.5NH “ OUTPUT AUDIO R5 REOUIRED FOR AUTO TEST EOUIP FIGURE 3. Test circuit. 5962-90644 . REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON
47、, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-IOTE : Application component list is as follows: CI c2 c5 C6 c7 C8 c9 c1 o c11 c12 CI3 C14 CI 5 CI 7 CI8 cz1 C23 Fltl Flt2 IFT1 LI L2 XI R4 R6 R7 R8 RI2 RI3 RI4 RI5 R1
48、5.5 RI6 RI8 RI9 R21 RZ2 R23 R24 R9 RI7 R10 RI 1 100 pF NPO ceramic 390 pF NPO ceramic 100 nF 110% monolithic ceramic 22 pF NPO ceramic 1 nF ceramic 10.0 pF NPO ceramic (minimum) 100 nF 210% monolithic ceramic 15 pF tantalun (minim) 100 nF 110% monolithic ceramic 15 nF 10% ceramic 150 pF t2% N 1500 c
49、eramic 100 nF tlO% monolithic ceramic 10 pF NPO ceamic 100 nF 11oX monolithic ceramic 100 nF 110% monolithic ceramic 100 nF 110% monolithic ceramic 100 nF 110% monolithic ceramic Ceramic filter murata SFG455A3 or equivalent Ceramic filter murata SFG455A3 or equivalent 455 kHz (Ce = 180 pF) RMC-ZA6597H 147 - 160 nH coilcraft UNI-10/142-04J08S 3.3 pH, nominal toko 292 CNS-T1 0462 44.545 MHs crystal ICM
