1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. -rrp 04-06-29 R. MONNIN REV SHET REV SHET REV STATUS REV A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY DAN WONNELL DEFENSE SUPPLY CENTER COLUMBUS STAN
2、DARD MICROCIRCUIT DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, MICROPROCESSOR SUPERVISORY CIRCUITS, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEF
3、ENSE DRAWING APPROVAL DATE 92-03-26 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-90711 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E322-04 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90711 DEFENSE S
4、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and l
5、ead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90711 01 M E A Federal stock class designator RHA design
6、ator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designato
7、r. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circui
8、t function 01 MAX691 Microprocessor watchdog/battery switchover/reset generator 02 MAX693 Microprocessor watchdog/battery switchover/reset generator 03 MAX695 Microprocessor watchdog/battery switchover/reset generator 1.2.3 Device class designator. The device class designator is a single letter iden
9、tifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF
10、-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in
11、 MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90711 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISI
12、ON LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC). -0.3 V dc to +6.0 V dc Battery voltage range (VBATT) -0.3 V dc to +6.0 V dc All other inputs . -0.3 V dc to (VOUT+ 0.5 V) Input current: VCC+200 mA VBATT. +50 mA GND +20 mA Output current: VOUTShort
13、 circuit protected All other outputs +20 mA Rate-of-rise, VBATT, VCC +100 V/s Storage temperature range -65C to +160C Lead temperature (soldering, 4 seconds). 260C Power dissipation (PD) . 600 mW 2/ Lead temperature (soldering, 10 seconds) 300C Thermal resistance, junction-to-case (JC) . +50C/W Ther
14、mal resistance, junction-to-ambient (JA) +100C/W 1.4 Recommended operating conditions. Supply voltage (VCC): Device types 01 and 03 4.75 V dc to 5.5 V dc Device type 02 4.5 V dc to 5.5 V dc Battery voltage (VBATT) 2.8 V Ambient operating temperature range (TA). -55C to +125C 2. APPLICABLE DOCUMENTS
15、2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE S
16、PECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of S
17、tandard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094
18、.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stress
19、es above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derate 10 mW/C above +85C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAN
20、DARD MICROCIRCUIT DRAWING SIZE A 5962-90711 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as spec
21、ified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN
22、 class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case out
23、line. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The truth table shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter li
24、mits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subg
25、roups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to s
26、pace limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance wit
27、h MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For
28、 device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an app
29、roved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein
30、or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits de
31、livered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. F
32、or device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M.
33、Device class M devices covered by this drawing shall be in microcircuit group number 105 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90711 DEFENSE SUPPLY CENTER COLUMBUS CO
34、LUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits 2/ Test Symbol Conditions 1/ -55C TA +125C VBATT= 2.8 V unless otherwise specified Group A subgroups Device type Min Max Unit BATTERY BACKUP SWITCHING 01, 03 4.75 5.5 VCC02
35、4.5 5.5 01, 03 2.0 4.25 Operating voltage range VBATT1, 2, 3 02 2.0 4.0 V IOUT= 1 mA VCC-0.3 Output voltage VOUTIOUT= 50 mA 1, 2, 3 All VCC-0.5 V Battery output voltage backup mode BATTOUTIOUT= 250 A, VCCVCC VBATT+ 1 V 2, 3 All -1.0 +0.02 A Battery switchover threshold VCC- VBATTBATTSWTHPower up or
36、power down 1, 2, 3 All -200 +200 mV BATT ON output voltage BATT ONOUTISINK= 3.2 mA 1, 2, 3 All 0.4 V BATT ON = VOUT60 mA BATT ON output short circuit current BATT ONIOSBATT ON = 0 V 1, 2, 3 All 0.1 25 A RESET AND WATCHDOG TIMING 01, 03 4.5 4.75 Reset voltage threshold RTH1, 2, 3 02 4.25 4.5 V Reset
37、threshold hysteresis RTHH1, 2, 3 All 250 mV See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90711 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET
38、 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits 2/ Test Symbol Conditions 1/ -55C TA +125C VBATT= 2.8 V unless otherwise specified Group A subgroups Device type Min Max Unit RESET AND WATCHDOG TIMING continued 9 35 70 10, 11 01, 02 31 78 9 140 280 Reset t
39、imeout delay RDELOSC SEL HIGH VCC= 5 V 10, 11 03 126 310 ms 9 1.0 2.25 Long period, VCC= 5 V 10, 11 0.9 2.42 s 9 70 140 Watchdog timeout period, internal oscillator WDINTShort period, VCC= 5 V 10, 11 All 62 154 ms Long period 3840 4097 Watchdog timeout period external clock WDEXTShort period 9, 10,
40、11 All 768 1025 Clock cycles 9 200 Minimum WDI input pulse width WDIPWVIL= 0.4 V, VIH= VCC(0.8) 10, 11 All 300 ns RESET output voltage high R VOHISOURCE= 1 A, VCC= 5 V 1, 2, 3 All 3.5 V ISINK= 1.6 mA, VCC= 4.25 V 1 0.4 RESET output voltage low R VOLISINK= 800 A, VCC= 4.25 V 2, 3 All 0.4 V LINE LOW o
41、utput voltage high LL VOHISOURCE= 1 A, VCC= 5 V 1, 2, 3 All 3.5 V ISINK= 1.6 mA, VCC= 4.25 V 1 0.4 LINE LOW output voltage low LL VOLISINK= 800 A, VCC= 4.25 V 2, 3 All 0.4 V WDO output voltage high WDOVOHISOURCE= 1 A, VCC= 5 V 1, 2, 3 All 3.5 V ISINK= 1.6 mA, VCC= 4.25 V 1 0.4 WDO output voltage low
42、 WDOVOLISINK= 800 A, VCC= 4.25 V 2, 3 All 0.4 V RESET output voltage high RESETVOHISOURCE= 1 A, VCC= 5 V 1, 2, 3 All 3.5 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90711
43、DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits 2/ Test Symbol Conditions 1/ -55C TA +125C VBATT= 2.8 V unless otherwise specified Group A subgroups Device type Min Max Unit RE
44、SET AND WATCHDOG TIMING continued ISINK= 1.6 mA 1 0.4 RESET output voltage low RVOLISINK= 800 A 2, 3 All 0.4 V Output short circuit current IOSRESET , RESET, WDO,LL1, 2, 3 All 1 25 A 1 0.8 WDI input threshold logic low WDIVILVCC= 5 V 3/ 4/ 2, 3 All 0.4 V 1 3.5 WDI input threshold logic high WDIVIHVC
45、C= 5 V 3/ 4/ 2, 3 All 4.0 V 1 50 WDI = VOUT2, 3 80 1 -50 WDI input current WDIINWDI = 0 V 2, 3 All -80 A POWER FAIL DETECTOR PFI input threshold PFIVTHVCC= +5 V 3/ 1, 2, 3 All 1.2 1.4 V PFI input current PFIIN1, 2, 3 All -25 +25 nA PFO output voltage high PFOVOHISOURCE= 1 A, VCC= 5 V 1, 2, 3 All 3.5
46、 V ISINK= 3.2 mA 1 0.4 PFO output voltage low PFOVOLISINK= 1.6 mA 2, 3 All 0.4 V PFO short circuit source current PFOIOSPFI = VIH, PFO = 0 V 1, 2, 3 All 1 25 A CHIP ENABLE GATING 1 0.8 CE INthresholds logic low CE VIL2, 3 All 0.4 V See footnotes at end of table. Provided by IHSNot for ResaleNo repro
47、duction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90711 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits 2/ Test Symbol Cond
48、itions 1/ -55C TA +125C VBATT= 2.8 V unless otherwise specified Group A subgroups Device type Min Max Unit CHIP ENABLE GATING - continued 1 3.0 CE INthresholds logic high CE VIH2, 3 All 4.0 V CE INpullup current CEINPI1, 2, 3 All 1 25 A ISOURCE= 3.0 mA, VCC= 4.75 V VOUT-1.5 CE OUToutput voltage high CE VOHISOURCE= 1 A, VCC= 0 V 1, 2, 3 All VOUT-0.05 V ISINK= 3.2 mA 1 0.4 CE OUToutput voltage low CE V
