1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update to current requirements. Editorial changes throughout. - gap 06-08-02 Raymond Monnin The original first page of this drawing has been replaced. REV SHET REV SHET REV STATUS REV A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11
2、PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Tim H. Noh COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Tim H. Noh MICROCIRCUIT, DIGITAL, ECL, QUINT DIFFERENTIAL LINE REC
3、EIVER, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 92-05-21 MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-91629 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E507-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH
4、S-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91629 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and spac
5、e application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example:
6、5962 - 91629 01 M X X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specifi
7、ed RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the
8、 circuit function as follows: Device type Generic number Circuit function 01 100314 Quint differential line receiver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vend
9、or self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: O
10、utline letter Descriptive designator Terminals Package style X GDIP5-T24 or CDIP6-T24 24 dual-in-line Y See figure 1 24 quad flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot fo
11、r ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91629 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Negative supply voltage range (VEE) .
12、-7.0 V dc to +0.5 V dc DC input voltage range (VIN) VEEto +0.5 V Maximum dc output current (IOUT) . -50 mA Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) +175C Maximum power dissipation (PD) . 536 mW Thermal resistance, junction-to-
13、case (JC): Case X See MIL-STD-1835 Case Y 28 C/W 1.4 Recommended operating conditions. Negative supply voltage range (VEE) . -5.7 V dc minimum to -4.2 V dc maximum High level input voltage range (VIH) . -1.165 V minimum to -0.870 V maximum Low level input voltage range (VIL) -1.830 V minimum to -1.4
14、75 V maximum Case operating temperature range (TC) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of
15、 these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Ele
16、ctronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standard
17、ization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes a
18、pplicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproductio
19、n or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91629 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q
20、and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall
21、be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-3853
22、5, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3.
23、 3.2.4 Test circuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation
24、parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. Th
25、e part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product
26、 using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes
27、 Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer
28、 in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-
29、VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conform
30、ance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to
31、 DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufactur
32、ers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 30 (see MIL-PRF-38535,
33、 appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91629 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance char
34、acteristics. Limits Test Symbol Conditions 1/ -55C TC +125C -5.7 V VEE -4.2 V unless otherwise specified Group A Subgroups Min Max Unit 1, 2 -1.025 -0.870 High level output voltage VOH3 -1.085 -0.870 1, 2 -1.830 -1.620 Low level output voltage VOLVEE= -4.2 V, VIL= -1.830 V, VIH= -0.870 V 3 -1.830 -1
35、.555 V 1, 2 -1.035 High level threshold output voltage VOHC3 -1.085 1, 2 -1.610 Low level threshold output voltage VOLCVEE= -4.2 V, VIL= -1.475 V, VIH= -1.165 V 3 -1.555 V VEE= -4.2 V, IVBB= 0 mA 1, 2, 3 -1.260 VEE= -5.7 V, IVBB= -0.25 mA 1, 2 -1.380 Output reference voltage VBBVEE= -5.7 V, IVBB= -0
36、.35 mA 3 -1.396 V Common mode voltage VCM1, 2, 3 -2.0 -0.5 Differential input voltage VDIFFVEE= -4.2 V 1, 2, 3 0.150 V 1, 2 50 High level input current, select inputs IIHVEE= -5.7 V, VIN= -0.870 V 3 70 Input collector-base leakage current ICBOVEE= -4.2 V, VIN= -4.2 V 1, 2, 3 -10 A Power supply drain
37、 current IEEVEE= -5.7 V, -4.2 V, Inputs open 1, 2, 3 -65 -25 mA Functional tests VIL= -1.652 V, VIH= -1.018 V, VEE= -5.7 V, -4.2 V, See 4.4.1b 7, 8 9 0.6 2.2 10 0.6 2.7 Propagation delay time, data to output tPLH, tPHL11 0.4 2.3 Transition time, output 2/ tTLH, tTHLSee figure 4 9, 10, 11 0.2 1.4 ns
38、1/ Each input/output, as applicable, shall be tested at the specified temperature for the specified limits. Output terminals shall be terminated through 50 to -2 V. Input terminals not designated shall be high logic level, low logic level, or open. 2/ This parameter is provided as design information
39、 only (not tested but guaranteed). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91629 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 Inches 1/ Milli
40、meters 1/ Symbol Min Max Min Max A .085 2.16 b .016 .018 0.41 0.46 c .004 .006 0.10 0.15 D/E .370 .400 2/ 9.40 10.16 2/ e .045 .055 1.14 1.40 L .250 .360 6.35 9.14 Q .035 .050 0.89 1.27 S .075 1.91 N 24 24 NOTE: 1. The U.S. government preferred system of measurement is the metric SI system. However,
41、 since this item was originally designed using inch-pound units of measurement, in the event of conflict between the metric and inch-pound units, the inch-pound units shall take precedence. 2. This dimension allows for meniscus and glass overrun. FIGURE 1. Case outline. Provided by IHSNot for Resale
42、No reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91629 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outlines X Y Terminal number Terminal symbol 1 eD Dd 2 eO d
43、D 3 Oe De 4 dO eD 5 Od eO 6 VCCOe 7 VCCAdO 8 cO Od 9 Oc VCC10 bO VCCA11 Ob cO 12 aO Oc 13 Oa bO 14 Da Ob 15 aD aO 16 Db Oa 17 bD Da 18 VEEaD 19 VBBDb 20 Dc bD 21 cD VEE22 Dd VBB23 dD Dc 24 De cD FIGURE 2. Terminal connections. Inputs Outputs Dx xD Ox xO H L H L H VBBH L L H L H L VBBL H VAVAL H H =
44、High level (with respect to other input) L = Low level (with respect to other input) VBB= Connected to VBBreference supply VA= Some potential between VEEand VCCFIGURE 3. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCU
45、IT DRAWING SIZE A 5962-91629 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 NOTES: 1. VCC= VCCA= +2.0 V, VEE= -2.5 V. 2. L1 and L2 = equal length 50 impedance lines. 3. RT= 50 terminator internal to scope. 4. Decoupling 0.1 F from GND to VCCan
46、d VEE. 5. All unused outputs are loaded with 50 to GND. 6. CL= fixture and stray capacitance 3 pF. FIGURE 4. Test circuit and timing waveforms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91629 DEFENSE SU
47、PPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Manag
48、ement (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be
