DLA SMD-5962-91675 REV A-2008 MICROCIRCUIT LINEAR DUAL HIGH SPEED CURRENT FEEDBACK OPERATIONAL AMPLIFIER MONOLITHIC SILICON《微电路 线性电流反馈高速单片二运算放大器》.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. -rrp 08-03-18 R. HEBER THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY RIC

2、K C. OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, DUAL, HIGH SPEED, CURRENT FEEDBACK, OPERATION

3、AL AMPLIFIER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 92-07-29 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-91675 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E081-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license

4、from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91675 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) a

5、nd space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following ex

6、ample: 5962 - 91675 01 M P X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535

7、specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) ident

8、ify the circuit function as follows: Device type Generic number Circuit function 01 EL2232 Dual, high speed, current feedback operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device re

9、quirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in

10、 MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for Res

11、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91675 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 18 V dc or 36 V dc In

12、put voltage (VIN) . 15 V dc or VSDifferential input voltage (VIN) 6.0 V dc Input current (IIN) 10 mA Peak output current (IOP) . Short circuit protected Output short circuit duration 2/ Continuous Power dissipation, TA= +25C (PD) 3/ . 1.2 W Storage temperature range . -65C to +150C Thermal resistanc

13、e, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) +125C/W Junction temperature (TJ) . +175C Lead temperature (soldering, 10 seconds) . +300C 1.4 Recommended operating conditions. Supply voltage (VS) 15 V dc Ambient operating temperature range (TA) -55C TA +125C

14、 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract

15、. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS

16、 MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building

17、4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption

18、 has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ A heat sink is required to keep TJbelow +175C when output is shorted. 3/ Free air, no heat sink. D

19、erate linearly above TA= +25C at 8.0 mW/C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91675 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQU

20、IREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or fu

21、nction as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall

22、be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

23、3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Elect

24、rical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For p

25、ackages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordanc

26、e with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ a

27、s required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compl

28、iance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets

29、, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MI

30、L-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change t

31、hat affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the opti

32、on of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDAR

33、D MICROCIRCUIT DRAWING SIZE A 5962-91675 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Un

34、it Min MaxOpen loop dc characteristics 1/ Input offset voltage VOSVS= 5.0 V, 15 V 1 All 7.0 mV 2, 3 10 +Input current +IINVS= 5.0 V, 15 V 1 All 5.0 A 2, 3 7.5 -Input current -IINVS= 5.0 V, 15 V 1 All 20 A 2, 3 25 +Input resistance +RIN1, 2, 3 All 2.0 M Input current common mode rejection 2/ -ICMR 1

35、All 0.75 A/V 2, 3 1.0 Power supply rejection ratio 3/ PSRR 1, 2, 3 All 66 dB +Input current power supply rejection 3/ +IPSR 1 All 0.06 A/V 2, 3 0.1 -Input current power supply rejection 3/ -IPSR 1 All 0.2 A/V 2, 3 0.3 Transimpedance (VOUT/IIN) ROL4/ 1 All 1.2 M 2, 3 0.9 Output voltage swing VOVS= 15

36、 V, RL= 500 1, 2, 3 All 11.5 V VS= 5.0 V, RL= 500 2.0 Output current 5/ IOUTVS= 15 V 1, 2, 3 All 23 mA VS= 5.0 V 4.0 Quiescent supply current IS1 All 13 mA 2, 3 14 Short-circuit current 5/ ISCVS= 5.0 V, 15 V, TA= +25C 1 All 100 mA Common mode rejection ratio 2/ CMRR VS= 5.0 V, 15 V 4, 5, 6 All 56 dB

37、 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91675 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrica

38、l performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxClosed loop ac characteristics 6/ Channel separation 5/ CS At 100 kHz, RL= 1.0 M, TA= +25C 4 All 80 dB -3 dB bandwidth 5/ BW AV= -1.0, TA= +25C

39、 4 All 30 MHz AV= +1.0, TA= +25C 40 AV= +10, TA= +25C 15 Slew rate 7/ SR AV= +1.0 7 All 400 V/s 8 5/ 300 V= +10 7 500 8 5/ 400 Rise time, fall time 5/ tr, tfAV= +1.0, measured at 10 percent to 90 percent, with 100 mV step, TA= +25C 9 All 15 ns V= +1.0, measured at 10 percent to 90 percent, with 10 V

40、 step, TA= +25C 30 Settling time 5/ tsAV= -1.0, 2 V step at 0.1 percent of the fixed value, TA= +25C 9 All 170 ns V= -1.0, 2 V step at 0.02 percent of the fixed value, TA= +25C 240 V= +1.0, 2 V step at 0.1 percent of the fixed value, TA= +25C 170 V= +1.0, 2 V step at 0.02 percent of the fixed value,

41、 TA= +25C 220 V= +10, 2 V step at 0.1 percent of the fixed value, TA= +25C 170 V= +10, 2 V step at 0.02 percent of the fixed value, TA= +25C 250 1/ Unless otherwise specified, VS= 15 V and RL= 500 . 2/ VCM= 10 V for VS= 15 V. For VS= 5.0 V, VCM= 2.0 V. 3/ VOSis measured at VS= 4.5 V and at VS= 18 V.

42、 Both supplies are changed simultaneously. 4/ RL= 500 , VO= 10 V for VS= 15 V, and VO= 2.0 V for VS= 5.0 V. 5/ If not tested, shall be guaranteed to the limits specified in table I herein. 6/ Unless otherwise specified, VS= 15 V, AV= +1.0, RF= 1.5 k, RL= 500 , TA= +25C. 7/ VO= 10 V, slew rate is tes

43、ted at VO= 5.0 V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91675 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outline P Te

44、rminal number Terminal symbol 1 OUTPUT A 2 -INPUT A 3 +INPUT A 4 VS-5 +INPUT B 6 -INPUT B 7 OUTPUT B 8 VS+FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91675 DEFENSE SUPPLY C

45、ENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management

46、(QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with M

47、IL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional crit

48、eria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, D, or E. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applic

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