DLA SMD-5962-91762 REV B-1993 MICROCIRCUIT DIGITAL CMOS 4 X 8 BIT MULTILEVEL PIPELINE REGISTER MONOLITHIC SILICON《硅单块 4X8比特多级流水线寄存器 互补金属氧化物半导体 数字微型电路》.pdf

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1、- SMD-5b2-917b2 REV B b 0035b83 580 DATE (YYHHDD) NOTICE OF REVISION (NOR) (See MIL-STD-480 for instructions) 93-01 -1 5 This revision described below has been authorized for the document listed. Form Approved OMB NO. 0704-0188 4. ORIGINATOR NAHE AND ADDRESS Defense Electronics Supply Center Dayton,

2、 Ohio 45444-5270 2. CAGE CODE 3. NORNO. 67268 4. CAGE CODE I 67268 5962-RM9-93 5. DOCUf4ENT NO. 15962-91762 6. TITLE OF WCUHENT Microcircuit, Digital, CMOS, 4 x 8 Bit Multilevel Pipeline Register, Monolithic Silicon 7. REVISION LETTER (Current) A (New) B 8. ECP No. N/A (No registered users) AL1 IO.

3、DESCRIPTION OF REVISION Sheet 1: Revisions ltr column; add “B“. Revisions description column; add “Changes in accordance with NOR 5962-R069-93. Revisions date column; add “93-01-15“. Revision level block; add “B“. Rev status of sheets; For sheets 1, 5 and 7, add “8“. Delete “Output short current (Io

4、s) test“ in its entirety. Add “Output high current (IOH) test“ as follows: Sheet 5: I I I I I I I Unit I I IsubgroupsI type I min I max Conditions Group A Device Limit Test b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT DESC-ECC 12. ACTIVITY ACCHPLISHINt REVISION i - 3/ i i i Output high cu

5、rrent I IOH I Vcc = 5.5 V, VOUT = 2.0 VI 1,2,3 I ALL I -30 I -350 I mA I l I I I I I SIGNATURE AND TITLE DATE (YYMMDD) Monica L. Poelking 93-01 -1 5 Chief, Custom Microelectronics REVISION COMPLETED (Signature) DATE (YYMMDD) Revision Level block; add “B“. Change footnote 3/ from “Duration of the out

6、put short circuit should not exceed 30 seconds“ to Delete footnote i/. Revision level block; add itBli. Sheet 7: “This test replaces the output short current test (Ios).ll DESC-ECC I Tim H. Noh 11. THIS SECTION FOR GOvERHnENT USE ONLY a. CHECK ONE qEXISTING DOCUMENT SUPPLEMENTED REVISED DOCUMENT MUS

7、T BE CUSTODIAN OF MASTER DOCUMENT BY THIS NOR MAY BE USED IN RECEIVED BEFORE MANUFACTURER SHALL MAKE ABOVE REVISION AND HANUFACTURE. MAY INCORPORATE THIS CHANGE. FURNISH REVISED DOCUMENT TO: I I 93-01 -1 5 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-

8、,-,- :SMD-5b2-91762 REV B m 79b 0035682 417 m b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT DESC-ECC 12. ACTIVIM ACCWPLISHING REVISION DESC-ECC nATE (-1 92-11-06 NOTICE OF REVISION (NOR) (See MIL-STD-480 for instructions) This revision described below has been authorized for the document l

9、isted. SIGNATURE AND TITLE DATE (YYMMDD) Monica L. Poelking 92-11-06 Chief , Custom Microelectronics REVISION COMPLETED (Signature) DATE (YYMMM) Wanda L. Meadows 92 -1 1-06 Form Approved OMB NO. 0704-0188 Public reporting burden for this collection is estimated to average 1 hour per response, includ

10、ing the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comnents regarding this burden estimate or any other aspect of this collection of information, including suggestions f

11、or reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of Information and Regulatory Affairs, Office of Management and Budget, Washington, DC 20503. I 1. O

12、RIGIMTOR NM AJl AWRESS Defense Electronics Supply Center Dayton, Ohio 45444-5270 2. CAGECODE 4. CAGECODE 67268 7. REVISION LETTER L- Current 6. TITLE OF WCUCIEKT MONOLITHIC SILICON MICROCIRCUITS, DIGITAL, CMOS, 4 X 8-BIT MULTILEVEL PIPELINE REGISTER, 3. WORM. 5962-R014-93 5. IlOCWENT NO. 5962-91762

13、(New) A 8. ECP n0. 9. CONFIGuRATIOn ITEH (OR %STEH) TO WICH ECP APPLIES 10. DESCRIPTION OF REVISIM Sheet 1: Revisions ltr column: add “A“. Revisions description column; add “Changes in accordance with NOR 5962-R014-93“. Revisions date column; add “92-11-06“. Revision level block; add “A“. Rev status

14、 of sheets; For sheets 1, 5, and 7: add “A“. Sheet 5: Table I, Output short circuit test, maximum limit; change from: “-125“ to: “-200“. Table I, Output short circuit test, minimum limit; add: “-60“. Revision level block; add: “A“. Sheet 7: Footnote 3; change from: “Duration of short circuit should

15、not exceed 30 seconds.“ to: “Duration of short circuit should not exceed 30 seconds. Minimum and maximm values are based on the magnitude of the current. The sign indicates direction only.“ Revision level block; add: “A“. Provided by IHSNot for ResaleNo reproduction or networking permitted without l

16、icense from IHS-,-,-SMD-5962-71762 REV B m 9999996 0035683 353 m LTR DESCRIPTION DATE (YR-HO-DA) APPROVED SHEET zl3F REV STATUS OF SHEETS PMIC NIA STANDARDIZED MILITARY DRAWING THIS DRAUING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTHENT OF DEFENSE AHSC N/A DESC FORH 193 JUL 9

17、1 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUITS DIGITAL CMOS 4 X 8- MONOLITHIC SILICON BIT MULTILEVE PIPELINE REGISTER, DRAWING APPROVAL DPTF 9 2-03- 1 1 SIZE CAGE CODE 5962-91762 -A 67268 REVISION LEVEL SHEET 1 OF 16 5962-E451 DISTRIBUTION STATEMENT A. Approved for public relea

18、se; distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-9L762 REV B M 9999996 0035684 29T M 1. SCOPE 1.1 Scope. This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). iio produ

19、ct assurance classes consisting of military high reliability (device classes E, Q, and M) and space application (device classes S and VI, and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). microcircuits in accordance with 1.2.1 of

20、 MIL-STD-833, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAM devices“. in the PIN. 1.2 PIN. Device class M microcircuits represent non-JAN class EI When avai labte, a choice of radiation hardness assurance (RHA) levels are reflected The PIN shall be as shown in the foll

21、owing example: - 91762 o1 M X L 5962 - I l I I I I I I l I I I I l I I I I I I l l l I I l l I Device Device Lead Federal RHA Case stock class designator type class outline finish designator (See 1.2.1) (See 1.2.2) designator (See 1.2.4) (See 1.2.5) I / (See 1.2.3) / Drawing number 1.2.1 Radiation h

22、ardness assurance (RHA) desianator. Device classes M, 8, and S RHA marked devices shall meet the MIL-H-38510 specified RHA levels and shall be marked with the appropriate RHA designator. and V RHA marked devices shall meet the MIL-1-38535 specified RHA levels and shall be marked with the appropriate

23、 RHA designator. Device classes Q A dash (-) indicates a non-RHA device. 1.2.2 Device typeb). The device typeCs) shall identify the circuit function as follows: Device type Generic number Circuit function Propaciation Delay o1 L29C520 4 x 8-bit multilevel pipeline register 30 ns o2 L29C520 4 x hall

24、be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 :hrough 4.4.5). Technology conformance inspection for classes Q and V shall be in accordance with MIL-1-38535 including groups A, B, C, D, and E inspections and as specified herein except

25、where option 2 of MIL-1-38535 permits I lternate in- 1 i ne control test i ng . Quality conformance inspection for device classes B and S shall Inspections to be performed for device classes M, 6, and s SIZE 5962-91762 A REVISION LEVEL SHEET 12 Provided by IHSNot for ResaleNo reproduction or network

26、ing permitted without license from IHS-,-,-I - - 1 SMD5462-9L762 REV B m 9999996 0035695 075 m 4.4.1 Group A inspection. a. b. Tests shall be as specified in table IIA herein. For device class ti, subgroups 7 and 8 tests shall consist of verifying the functionality of the device. For device classes

27、B and S, subgroups 7 and 8 tests shall be sufficient to verify the truth table as approved by the qualifying activity. functionality of the device; these tests shall have been fault graded in accordance with MIL-STD-883, test method 5012 (see 1.5 herein). which my affii? capacitance. For device clas

28、ses Q and V, subgroups 7 and 8 shall include verifying the c. Subgroup 4 (C measurement) shall be measured only for the initial test and after process or design changes A minimum sample size of 5 devices with zero rejects shall be required. TABLE IIA. Electrical test requirements. Test requirenents

29、Interim electrical parameters (see 4.2) Fina 1 electri ca 1 parameters (see 4.2) Group A test requirements (see 4.4) Group B end-point electrical parameters (see 4.4) Group C end-point electrical parameters (see 4.4) Group D end-point electrical Group E end-point electrical parameters (see 4.4) para

30、meters (see 4.4) Subgrotips 1 Subgroups I table III) (per meti-jcl 5305,table I) (per MIL-1-38535, I Devi ce Devi ce class I class I _t_ Devi ce Devi ce class I class 1,7,9 I 1,7,9 ! l 1,7,9 I I I I I I I I I I I Devi ce class V 1,7,9 Y 1, 2,3,7,a, 9,10,11 1,2,3,4, 7,8,9, 10,11 - I/ PDA applies to s

31、ubgroup 1. - 2/ PDA applies to subgroups 1 and 7. 4.4.2 Group B inspection. The group B inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.3 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. ST

32、ANDARDIZED 5962-91762 MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL DESC FORM 193A JL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-5962-9L762 REV B M 9999996 0035696 TO1 m STANDARDIZED MILTTARY DRAWIN

33、G DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 4.4.3.1 Additional criteria for device classes #, 8, and S. Steady-state life test conditions, methad 1005 of MIL-STD-883: a. Test condition A, For device class M, the test circuit shall be submitted to DESC-ECC for review with the certificate o

34、f compliance. activity. For device classes B and S, the test circuit shall be submitted to the qualifying b. TA = +125”C, minimum. c. Test duration: 1,OOO hours, except as permitted by method 1005 of MIL-STD-883. 4.4.3.2 Additional criteria for device classes Q and V. The steady-state life test dura

35、tion, test condition and test temperature or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-1-38535. compliance and shall be under the control of the device manufacturers TRB in accordsnce with MIL-1-38535. The steady-state Life test circuit sh

36、all be submitted to DESC-ECC with the certificate of 4.4.4 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table SIZE 5962-91762 A WVISIQN LEVEL SBEET IIA herein. TABLE 116. Additional acreeninci for device class V. I I i Test I MIL-STD-883, test m

37、ethod 1 Lot requirement I I I JParticle impact I 2920 I 1 00% I noise detection I I I I I I I Internal visual 1 2010, condition A or 1 Doi I I approved alternate I INondestructive I 2023 or I IDDA I bond pull I approved alternate I I I Reverse bias burn-in1 1015 I 1 00% t I Burn-in I 1015, total of

38、240 hours I 100% I I at t125”C I I I l I I l I IRadiographic i 2012 i- 1 WA DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- ._ SMD-5962-9L762 REV B m 9999996 0035697 948 W 4.4.5 Group E inspection. Group E inspection is require

39、d only for parts intended to be marked as radiation ardness assured (see 3.5 herein). evice class H shall be ti and D. pecified in the acquisition document. RHA levels for device classes 6, S, Q, and V shall be H, D, R, and H and for RHA quality conformance inspection sample tests shall be performed

40、 at the RHA level RHA tests for device classes B and S for levels H, D, R, and H or for device class H for levels ll and D shall be performed through each level to determine at what levels the devices meet the RHA requirements. These RHA tests shall be performed for initial qualification and after d

41、esign or process changes which my affect the RHA performance of the device. b. End-point electrical parameters shall be as specified in table IIA herein. c. Prior to total dose irradiation, each selected sample shall be assembled in its qualified package. pass the specified group A electrical parame

42、ters in table I for subgroups specified in table IIA herein. For device classes H, 8, and S, the devices shall be subjected to radiation hardness assured tests as specified in MIL-H-38510 for RHA level being tested, ur.d meet the postirradiation end-point electricat parameter limits as defined in ta

43、ble I at TA = +45“C *5 percent, after exposure. Prior to and during total dose irradiatior. testing, the devices shall be biased to establish a worst case condition as specified in the radiation exposure circuit. a. It shall d. e. f. For device classes H, 6, and S, subgroups 1 and 2 in table V, meth

44、od 5005 of HIL-STD-883 shall be tested as appropriate for device construction. When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied. g. 5. PACKAGING 5.1 Packagirw requirements. The requirements for packaging shall be in accordance with HIL-H-38510 for de

45、vice lasses ti, B, and S and HIL-1-38535 for device classes Q and V. 6. NOTES 6.1 Intended use. Hicrocircuits conforming to this drawing are intended for use for Government microcircuit ,pplications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuit

46、s covered by this drawing will replace the same gmeric device covered by a ontractor-prepared specification or drawing. 6.1.2 Substitutability. 6.2 Confiquration control of SMDs. Device classes B and Q devices will replace device class ti devices. All proposed changes to existing SHDs will be coordi

47、nated iith the users of record for the individual documents. iccordance with HIL-STD-481 using DD Form 1693, Engineering Change Proposal (Short Form). This coordination will be accomplished in 6.3 Record of users. Hilitary and industrial users shall inform Defense Electrcnics Supply Center ihen a sy

48、stem application requires configuration control and which SHQs are applicable to that system. mintain a record of users and this list will be used for coordinaticn and distribution of changes to the drawings. Isers of drawings covering microelectronic devices (FSC 5962) should ccntact DESC-ECC, tele

49、phone (513) 296-8526. DESC will 6.4 Comments. 6.5 Symbols, definitions, and functional descriptions. See table III. Comments on this drawing should be directed to DESC-ECC, Dayton, Ohio 45444, or :elephcne (513) 296-8526. STANDARD1 ZED 5962-91762 MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted with

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