DLA SMD-5962-93100 REV A-2010 MICROCIRCUIT DIGITAL ECL QUINT 2-INPUT AND NAND GATE MONOLITHIC SILICON.pdf

上传人:appealoxygen216 文档编号:700299 上传时间:2019-01-01 格式:PDF 页数:15 大小:164.44KB
下载 相关 举报
DLA SMD-5962-93100 REV A-2010 MICROCIRCUIT DIGITAL ECL QUINT 2-INPUT AND NAND GATE MONOLITHIC SILICON.pdf_第1页
第1页 / 共15页
DLA SMD-5962-93100 REV A-2010 MICROCIRCUIT DIGITAL ECL QUINT 2-INPUT AND NAND GATE MONOLITHIC SILICON.pdf_第2页
第2页 / 共15页
DLA SMD-5962-93100 REV A-2010 MICROCIRCUIT DIGITAL ECL QUINT 2-INPUT AND NAND GATE MONOLITHIC SILICON.pdf_第3页
第3页 / 共15页
DLA SMD-5962-93100 REV A-2010 MICROCIRCUIT DIGITAL ECL QUINT 2-INPUT AND NAND GATE MONOLITHIC SILICON.pdf_第4页
第4页 / 共15页
DLA SMD-5962-93100 REV A-2010 MICROCIRCUIT DIGITAL ECL QUINT 2-INPUT AND NAND GATE MONOLITHIC SILICON.pdf_第5页
第5页 / 共15页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirements. Editorial changes throughout. - gap 10-04-01 Charles F. Saffle REV SHET REV SHET REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Ngu

2、yen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ECL, QUINT

3、 2-INPUT AND/NAND GATE, MONOLITHIC SILICON DRAWING APPROVAL DATE 93-07-12 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-93100 SHEET 1 OF 14 DSCC FORM 2233 APR 97 5962-E514-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCU

4、IT DRAWING SIZE A 5962-93100 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device cla

5、ss V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 93100 01 M Y X Fede

6、ral stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marke

7、d with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follow

8、s: Device type Generic number Circuit function 01 10E504 Quint 2-input AND/NAND gate 02 100E504 Quint 2-input AND/NAND gate, temperature compensated 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device r

9、equirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated i

10、n MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style Y See figure 1 28 Quad flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleN

11、o reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93100 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VEE) 2/ . -8.0 V dc to 0.

12、0 V dc Input voltage range (VIN) 2/ -6.0 V dc to 0.0 V dc Minimum input swing (VPP) 0.150 V dc Output current (IOUT): Continuous . 50 mA Surge . 100 mA Storage temperature range . -65C to +165C Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) +165C Maximum power dissipation (

13、PD): Device type 01 . 251 mW Device type 02 . 290 mW Thermal resistance, junction-to-case (JC) 1.23C/W 1.4 Recommended operating conditions. Supply voltage range (VEE): 2/ Device type 01 . -5.46 V dc to -4.94 V dc Device type 02 . -5.46 V dc to -4.20 V dc Input voltage range (VIN): 2/ Device type 01

14、 . -1.950 V dc to -0.660 V dc Device type 02 . -1.810 V dc to -0.880 V dc Output voltage range (VOUT): 2/ Device type 01 . -1.972 V dc to -0.672 V dc Device type 02 . -1.810 V dc to -0.880 V dc Input rise and fall times, 20% to 80% (tr, tf) . 500 ps maximum Case operating temperature range (TC) -55C

15、 to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or

16、 contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE

17、HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, P

18、A 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Ratings apply when referenced to VCC= 0.0 V dc. Provided by IHSNot for ResaleNo reproduction or network

19、ing permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93100 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references c

20、ited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordan

21、ce with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-

22、PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein f

23、or device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Logic diagram. The

24、logic diagram shall be as specified on figure 4. 3.2.5 Test circuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figure 5. 3.2.6 Inner-layer dielectric. Polyimide and silicon coatings are allowed as part of the wafer fabrication process provided that eac

25、h microcircuit inspection lot (see MIL-PRF-38535, “Inspection lot - class B“) shall be subjected to and pass the internal water vapor content test in accordance with group D6 of test method 5005 of MIL-STD-883. The frequency of the internal water vapor testing may not be decreased unless approved by

26、 the preparing activity. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temper

27、ature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may

28、 also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V

29、 shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device cl

30、ass M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M,

31、a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manuf

32、acturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or fo

33、r device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is req

34、uired for any change that affects this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93100 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TA

35、BLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C unless otherwise specified Group A subgroupsDevice type Limits 1/ Unit Min Max High level input voltage VIH-5.46 V VEE -4.94 V for type 01 -5.46 V VEE -4.20 V for type 02 1 2 3 01 -1.130 -1.020 -1.258 -0.810 -0.660 -

36、0.906 V 1, 2, 3 02 -1.165 -0.880 Low level input voltage VIL1, 3 2 01 -1.950 -1.950 -1.480 -1.421 V 1, 2, 3 02 -1.810 -1.475 High level output voltage VOHVCC= VCCO= GND VIN= VIHmaximum, VILminimum Outputs terminated through 50 to -2.0 V VEE= -4.94 V 1 2 3 01 -0.980 -0.862 -1.097 -0.810 -0.672 -0.906

37、 V EE= -4.20 V 1, 2 3 02 -1.025 -1.097 -0.880 -0.880 Low level output voltage VOLVEE= -5.46 V 1 2 3 01 -1.950 -1.934 -1.972 -1.630 -1.579 -1.652 V 1, 2 3 02 -1.810 -1.810 -1.620 -1.600 High level threshold output voltage VOHTVCC= VCCO= GND VIN= VIHminimum, VILmaximum Outputs terminated through 50 to

38、 -2.0 V VEE= -5.46 V 1 2 3 01 -0.980 -0.862 -1.097 -0.810 -0.672 -0.906 V 1, 2 3 02 -1.025 -1.097 -0.880 -0.880 Low level threshold output voltage VOLTVEE= -4.94 V 1 2 3 01 -1.950 -1.934 -1.972 -1.630 -1.579 -1.652 V VEE= -4.20 V 1, 2 3 02 -1.810 -1.810 -1.620 -1.600 Power supply drain current IEEVC

39、C= VCCO= GND, VEE= -5.46 V VIN= VIHmaximum Outputs terminated through 50 to -2.0 V 1, 2, 3 01 -46 mA 1, 2 02 -46 -53 High level input current IIHVCC= VCCO= GND VEE= -4.94 V for type 01 = -4.20 V for type 02 VIN= VIHmaximum, VILminimum Outputs terminated through 50 to -2.0 V 1, 2, 3 All 10 200 A Low

40、level input current IILVCC= VCCO= GND, VEE= -5.46 V VIN= VIHmaximum, VILminimum Outputs terminated through 50 to -2.0 V 1, 2, 3 All 0.5 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ

41、E A 5962-93100 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TC +125C unless otherwise specified Group A subgroupsDevice type Limits 1/ Unit Min Max Func

42、tional test See 4.4.1b, VCC= VCCO= GND VEE= -4.94 V, -5.46 V for type 01 = -4.20 V, -5.46 V for type 02 7, 8 All Propagation delay time, Dna-b to Qn or Q%n (single ended) tPLH1, tPHL1See figure 5 9 10 11 01 245 240 140 605 845 775 ps 9 10 11 02 95 250 250 565 725 725 Propagation delay time, Dna-b to

43、 F or F%(single ended) tPLH2, tPHL29 10 11 01 515 255 435 1025 1510 975 ps 9 10 11 02 355 455 455 1055 1145 1075 Output transition time, Qn or Q%n tTLH1, tTHL19 10 11 01 250 250 250 765 805 745 ps 9, 10, 11 02 225 725 Output transition time, F or F%tTLH2, tTHL29, 10, 11 01 375 625 ps 9, 10, 11 02 27

44、5 725 1/ The limits are determined after a device has reached thermal equilibrium. This is defined as the reading taken with the device in a socket with 500 LFPM of +125C or -55C (as applicable) air blowing on the unit in a transverse direction with power applied for at least four minutes before the

45、 reading is taken. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93100 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 Case Y Dimension Millimeters In

46、ches Min Max Min Max D1/E1 8.89 10.16 .350 .400 A 1.52 2.03 .060 .080 b 0.36 0.48 .014 .019 e 1.27 BSC .050 BSC Q 0.89 1.09 .035 .043 c 0.10 0.18 .004 .007 L 7.49 8.38 .295 .330 D/E 23.88 25.65 .940 1.010 NOTES: 1. The preferred unit of measurement is millimeters. However, this item was designed usi

47、ng inch-pound units of measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound units shall rule. 2. Dimensions D1 and E1 allow for lid misalignment and glass meniscus. 3. Dimension Q shall be measured at the point of exit of the lead from the body

48、. 4. Lead number 1 is identified by a tab located on the lead. 5. Dimension c includes solder lead finish. 6. Lead numbers are shown for reference only and do not appear on package. FIGURE 1. Case outline. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93100 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 Device type All Case outline Y Terminal number Terminal symbol 1 VEE2 D1a3 D1b 4

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1