1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Redraw. Update drawing to current requirements. drw 09-08-19 Charles F. Saffle REV SHET REV SHET REV STATUS REV A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Greg A. Pitz DEFENSE SUPPLY CENTER COLUMBUS COLUMBU
2、S, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Rajesh R. Pithadia APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, MOSFET DRIVER, HIGH CURRENT, MONOLITHIC SILICON DRAWI
3、NG APPROVAL DATE 94-08-12 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-94640 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E443-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94640 DEFENSE SUPPLY CENT
4、ER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finish
5、es are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94640 01 M P A Federal stock class designator RHA designator (see 1
6、.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device c
7、lass M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit function 01 H
8、V400MJ High current MOSFET driver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class
9、level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-
10、line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94640 DEFEN
11、SE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage between pin 1 and pins 4/5 . 35 V Input voltage pin 7 max pin 1 + 1.5 V Input voltage pin 7 min . pin 4/5 - 1.5 V Input voltage pin 2 to 4/5 35 V Input voltage
12、pin 2 to 6 . -35 V Clamp current pin 7 300 mA Power dissipation at TA= +25C 2.33 W Junction temperature (TJ) . +200C Storage temperature range -65C to +150C Thermal resistance (JC) See MIL-STD-1835 1.4 Recommended operating conditions. Ambient operating temperature range -55C to +125C Operating supp
13、ly voltage . +10 V to +35 V 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in t
14、he solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPA
15、RTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D
16、, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption h
17、as been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAND
18、ARD MICROCIRCUIT DRAWING SIZE A 5962-94640 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as speci
19、fied herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN
20、class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outl
21、ine. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Switching diagram and test circuit. The switching diagram and test circuit shall be as specified on figure 2. 3.3 Electrical performance chara
22、cteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The ele
23、ctrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the ent
24、ire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking fo
25、r device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, app
26、endix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a m
27、anufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, th
28、e requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be
29、 provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Ve
30、rification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microci
31、rcuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 053 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5
32、962-94640 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA+125C +VSUPPLY= +15 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Input hi
33、gh differential voltage (pin 2 pin 8) VIHVOUT= 0 V, IOUTHI = 10 mA 1 All 0.6 2.8 V 2 0.1 2.3 3 1.0 3.2 Input low differential voltage (pin 2 pin 3/6) VILVOUT= 12 V, IOUTLO = -3 mA 1 All -1.1 -0.8 V 2 -0.95 -0.6 3 -1.2 -0.9 Input high current IIHVPIN1, 2 = 30 V, ISOURCE= 0 1 All 15.0 20.0 mA 2 13.0 1
34、8.0 3 18.0 25.0 Input low current IILVPIN2 = -30 V 1, 2 , 3 All -80.0 0 A High output voltage VOHVIN= +V, IOUT= 150 mA 1 All 12.1 13.4 V 2 12.2 13.5 3 11.0 13.0 Output low leakage IOLVOUT= 0 V, VIN= 0 V 1 All 0 50 A 2, 3 0 60 Low output voltage VOLVIN= 0 V, IOUT= -150 mA 1 All 0.8 1.0 V 2 0.65 0.85
35、3 0.9 1.1 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94640 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I.
36、Electrical performance characteristics - continued. Test Symbol Conditions -55C TA+125C +VSUPPLY= +15 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Output high leakage IOHVIN= 15 V 1, 3 All 0 2.0 A 2 100 Forward voltage VFID= 100 mA 1 All 0.8 1.4 V 2 0.8 1.25 3 0.8 1
37、.6 Reverse leakage current IRVR= 30 V 1, 2, 3 All -1.0 1.0 A Input high current fpeak IIHPISOURCE= 6 A, 1 s pulse, VIN= 9 V, VOUT= 0 V, 1/ +V = 15 V 1 All 500 900 mA Peak output current IOP81 s pulse, +V = 15 V, VIN= 9 V, VOUT= 0 V 1/ 1 All 4 8 A Peak output current IOP61 s pulse, +V = 15 V, VIN= 9
38、V, VOUT= 0 V 1/ 1 All 25 35 A Diode (pin 7) stored charge QRRID= 100 mA 1/ 4 All 6 7 nC Rise time tRSee figure 2 1/ 9, 10, 11 All 100 ns Fall time tFSee figure 2 1/ 9, 10, 11 All 27 ns Delay time (low to high) tDRSee figure 2 1/ 9, 10, 11 All 25 ns Delay time (high to low) tDFSee figure 2 1/ 9, 10,
39、11 All 33 ns Minimum off time tORSee figure 2 1/ 9, 10, 11 All 2280 ns 1/ Shall be guaranteed, if not tested, to the specified limits. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94640 DEFENSE SUPPLY CENT
40、ER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outlines P Terminal number Terminal symbol 1 +VSUPPLY2 INPUT3 SINK OUTPUT 4 GND 5 GND 6 SINK OUTPUT 7 DIODES 8 SOURCE OUTPUT FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reprod
41、uction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94640 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 FIGURE 2. Switching diagram and test circuit. Provided by IHSNot for ResaleNo reproducti
42、on or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94640 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspec
43、tion procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accor
44、dance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5
45、004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revi
46、sion level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Inte
47、rim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance
48、 with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical tes
