1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Redraw. Update drawing to current requirements. drw 09-12-23 Charles F. Saffle REV SHET REV SHET REV STATUS REV A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS
2、, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Sandra Rooney APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, MOTOR DRIVER, BRUSHLESS DC, THREE PHASE, MONOLITHIC SILICON
3、 DRAWING APPROVAL DATE 95-06-05 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-95544 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E099-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95544 DEFENSE SUPPL
4、Y CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead
5、finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 95544 01 M J A Federal stock class designator RHA designator
6、(see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. De
7、vice class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit functio
8、n 01 UC1620 Motor driver, 3-phase brushless DC 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, n
9、on-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style J GDIP1-T24 or C
10、DIP2-T24 24 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ
11、E A 5962-95544 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) 40 V dc Output current, source or sink: Non-repetitive (t = 100 s) 3 A Repetitive (80% on, 20% off; tON= 10 ms) 2.5 A DC operat
12、ion 2 A Analog inputs . -0.3 V dc to +VCCLogic inputs -0.3 V dc to +VCCPower dissipation (PD), TC= +75C, 2/ 25 W Junction temperature (TJ) . 150C Thermal resistance, junction-to-case (JC) . 3C/W Thermal resistance, junction-to-ambient (JA) 40C/W 1.4 Recommended operating conditions. Supply voltage (
13、VCC) 20 V dc Ambient operating temperature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues
14、 of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard
15、Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Or
16、der Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and
17、regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Above TC= +75C, derate linearly 333 mW/C. Provided by IHSNo
18、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95544 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirem
19、ents for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements
20、 for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device class
21、es Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on fi
22、gure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3
23、.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marke
24、d. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in a
25、ccordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be
26、 a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate
27、of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers produ
28、ct meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class
29、 M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any
30、change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at
31、the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 55 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,
32、-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95544 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA+125C VCC= 20 V, VT= 20 V, RT= 10 k, CT= -2.2 nF Group A subgroups D
33、evice type Limits Unit unless otherwise specified Min Max Error amplifier section Input offset voltage VIO1, 2, 3 01 10 V Input bias current IIB1, 2, 3 01 -2.0 A Input offset current IIO1, 2, 3 01 250 nA Common mode range CMR VCC= 8 V to 40 V 1/ 1, 2, 3 01 VIN- 2 V Open loop gain AOLV pin 6 = 1 V to
34、 4 V 1, 2, 3 01 75 dB Current sense section Input bias current IIB1, 2, 3 01 -5 A Internal clamp voltage VIC1, 2, 3 01 0.405 0.595 V Divider gain VDG1, 2, 3 01 0.170 0.230 V/V Internal offset voltage VIO1, 2, 3 01 0.75 1.25 V Decoder section High-level input voltage VINH1/ 1, 2, 3 01 2.5 V Low-level
35、 input voltage VINL1/ 1, 2, 3 01 0.8 V High-level input current IINH1, 2, 3 01 10 A Low-level input current IINL1, 2, 3 01 -10 A Functional tests FT See 4.4.1b 7, 8 01 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STA
36、NDARD MICROCIRCUIT DRAWING SIZE A 5962-95544 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TA+125C VCC= 20 V, VT= 20 V, RT= 10 k, CT= -2.2 nF Group A sub
37、groups Device type Limits Unit unless otherwise specified Min Max Timing section Output off time tOFF9, 10, 11 01 17 23 s Output section Output leakage current IOLVCC= 40 V 1, 2, 3 01 1500 A VF1 schottky diode VSCHIO= 2 A 1, 2, 3 01 2.0 V VF1 substrate diode VSUBIO= 2 A 1, 2, 3 01 3.0 V Total output
38、 voltage drop VTOTIO= 2 A 2/ 1, 2, 3 01 3.6 V Under voltage lockout Startup threshold voltage VTHRES1, 2, 3 01 8.0 V Thermal shutdown Junction temperature TJ1/ 1, 2, 3 01 150 180 C Total standby current Supply current ICC1, 2, 3 01 55 mA 1/ Guaranteed, if not tested to the limits specified. 2/ The t
39、otal voltage drop is defined as the sum of both top and bottom side driver. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95544 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEE
40、T 7 DSCC FORM 2234 APR 97 Device type 01 Case outline J Terminal number Terminal symbol 1 EMITTERS 2 EMITTERS 3 N/C 4 N/C 5 AOUT6 VCCPWR 7 VCCLOGIC 8 E/A +IN 9 E/A -IN 10 E/A COMP 11 N/C 12 ISENSE13 GROUND 14 TIMING 15 HALL A 16 HALL B 17 HALL C 18 FWD/REV 19 VCCPWR 20 COUT21 N/C 22 N/C 23 EMITTERS
41、24 BOUTN/C = no connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95544 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 223
42、4 APR 97 STEP FWD/ REV Ha Hb Hc AOUTBOUTCOUT1 1 1 0 1 H L O 2 1 1 0 0 H O L 3 1 1 1 0 O H L 4 1 0 1 0 L H O 5 1 0 1 1 L O H 6 1 0 0 1 O L H 1 0 1 0 1 L H O 2 0 1 0 0 L O H 3 0 1 1 0 O L H 4 0 0 1 0 H L O 5 0 0 1 1 H O L 6 0 0 0 1 O H L FIGURE 2. Truth table. FIGURE 3. Timing waveforms. Provided by I
43、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95544 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes
44、 Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection
45、 procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall b
46、e in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the man
47、ufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2
48、) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology R
