DLA SMD-5962-95549 REV C-2013 MICROCIRCUIT LINEAR DUAL DIFFERENTIAL COMPARATORS MONOLITHIC SILICON.pdf

上传人:dealItalian200 文档编号:700625 上传时间:2019-01-01 格式:PDF 页数:12 大小:108.89KB
下载 相关 举报
DLA SMD-5962-95549 REV C-2013 MICROCIRCUIT LINEAR DUAL DIFFERENTIAL COMPARATORS MONOLITHIC SILICON.pdf_第1页
第1页 / 共12页
DLA SMD-5962-95549 REV C-2013 MICROCIRCUIT LINEAR DUAL DIFFERENTIAL COMPARATORS MONOLITHIC SILICON.pdf_第2页
第2页 / 共12页
DLA SMD-5962-95549 REV C-2013 MICROCIRCUIT LINEAR DUAL DIFFERENTIAL COMPARATORS MONOLITHIC SILICON.pdf_第3页
第3页 / 共12页
DLA SMD-5962-95549 REV C-2013 MICROCIRCUIT LINEAR DUAL DIFFERENTIAL COMPARATORS MONOLITHIC SILICON.pdf_第4页
第4页 / 共12页
DLA SMD-5962-95549 REV C-2013 MICROCIRCUIT LINEAR DUAL DIFFERENTIAL COMPARATORS MONOLITHIC SILICON.pdf_第5页
第5页 / 共12页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to manufacturer PIN as specified in 1.2.6. - ro 01-03-01 R. MONNIN B Add a footnote under section 1.2.5.1. Add note 9 under figure 1. Drawing updated to reflect current requirements. - ro 06-02-22 R. MONNIN C Delete device class M ref

2、erences. Update drawing to current MIL-PRF-38535 requirements. - ro 13-12-12 C. SAFFLE REV SHEET REV SHEET REV STATUS REV C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil

3、STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY MICHAEL FRYE MICROCIRCUIT, LINEAR, DUAL DIFFERENTIAL COMPARATORS, MONOLITHIC SILICON DRAWING APPROVAL DATE 94-12-27 AMSC N/A REVISION LE

4、VEL C SIZE A CAGE CODE 67268 5962-95549 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E061-14 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95549 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C

5、SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes

6、are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment. 1.2 PIN. The PIN

7、 is as shown in the following example: 5962 - 95549 01 N X D Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes N, Q, and V RHA

8、marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 TLC372M Dual differe

9、ntial comparators 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation N Certification and qualification to MIL-PRF-38535 with a nontraditional performance environment (encapsu

10、lated in plastic) Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835, JEDEC Publication 95, and as follows: Outline letter Descriptive designator Terminals Package style Document X MS-012-AA 8 Plastic small outline JEP

11、 95 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95549 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.5 Lead finish. The lead finish is as specified in M

12、IL-PRF-38535 for device classes N, Q, and V. 1.2.5.1 Lead finish D. Lead finish D shall be designed by a single letter as follows: Finish letter Process D Palladium 1/ 1.2.6 Device class N manufacturer PIN. For device N, plastic encapsulated microcircuits (PEMs) the following manufacturer PIN (see 3

13、.5.1 herein) shall be marked: Standard Microcircuit 2/ Drawing PIN Manufacturer PIN 5962-9554901NXD Q372M 1.3 Absolute maximum ratings. 3/ Supply voltage (VDD) +18 V dc 4/ Differential input voltage (VID) . 18 V dc 5/ Input voltage range (VIN) -0.3 V dc to +18 V dc Output voltage (VOUT) +18 V dc Inp

14、ut current (IIN) 5 mA Output current (IOUT) +20 mA Duration of output short-circuit to ground Unlimited 6/ Continuous total power dissipation (PD) . 500 mW 7/ Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +260C 1.4 Recommended operating conditions. Supply voltage

15、 (VDD) +4 V dc minimum to +16 V dc maximum Common mode input voltage (VIC): VDD= 5 V 0 V dc minimum to +3.5 V dc maximum VDD= 10 V 0 V dc minimum to +8.5 V dc maximum Operating free-air temperature range (TA) -55C to +125C _ 1/ The manufacturer may supply palladium or gold flash palladium at his opt

16、ion. 2/ The SMD PIN is provided for cross reference information, see 3.5.1 herein. 3/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 4/ All voltage values except differentia

17、l voltages are with respect to network ground. 5/ Differential voltages are at the noninverting input terminal with respect to the inverting input terminal. 6/ Short circuits from outputs to VDDcan cause excessive heating and eventual device destruction. 7/ Above +25C, derate at a factor of 5.8 mW/C

18、. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95549 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, sta

19、ndards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Inte

20、grated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MI

21、L-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following documents form a pa

22、rt of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JEP 95 - Registered and Standard Outlines for Semiconductor Devices (Copies of this document

23、 are available online at www.jedec.org/ or from JEDEC Solid State Technology Association, 3103 North 10thStreet, Suite 240-S, Arlington, VA 22201). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes pre

24、cedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes N, Q, and V shall be in accordance with MIL-PRF-38535 and as specified here

25、in or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions for device classes N, Q, a

26、nd V shall be as specified in MIL-PRF-38535 and herein. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation p

27、arameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall

28、be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95549 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REV

29、ISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C Group A 2/ subgroups Device type Limits 3/ Unit unless otherwise specified Min Max Input offset voltage 4/ VIOVICR= 0 V to VDD 1.75 V 1 01 5 mV VICR= 0 V to VDD 2 V 2,

30、3 10 Input offset current IIOTA= +125C 2 01 10 nA Input bias current IIBTA= +125C 2 01 20 nA Common-mode input voltage range VICR1 01 0 to VDD 1.75 V 2,3 0 to VDD 2 High-level output current IOHVID= 1 V, VOH= 15 V, TA= +125C, -55C 2,3 01 3 A Low-level output voltage VOLVID= -1 V, IOL= 4 mA 1 01 400

31、mV 2,3 700 Low-level output current IOLVID= -1 V, VOL= 1.5 V, TA= +25C 1 01 6 mA Supply current (two comparators) IDDVID= 1 V, no load 1 01 300 A 2,3 400 1/ Unless otherwise specified, VDD= 5 V and VICR= 0 V. 2/ All group A subgroup 3 (TA= -55C) test limits are guaranteed but not tested. 3/ The alge

32、braic convention, whereby the most negative value is a minimum and the most positive is a maximum, is used in this table. Negative current shall be defined as conventional current flow out of a device terminal. 4/ The offset voltage limits given are the maximum values required to drive the output ab

33、ove 4 V or below 400 mV with a 10 k resistor between the output and VDD. They can be verified by applying the limit value to the input and checking for the appropriate output state. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUI

34、T DRAWING SIZE A 5962-95549 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 FIGURE 1. Case outline X. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95549 DLA L

35、AND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 Symbol Dimensions Notes Inches Millimeters Min Max Min Max A .053 .068 1.35 1.75 A1 .003 .008 0.10 0.21 b .014 .020 0.36 0.51 8 c .007 .009 0.19 0.25 D .188 .196 4.80 5.00 2 E .228 .244 5.80 6.20 E1 .149 .157 3

36、.80 4.00 3 e .049 BSC 1.27 BSC h .009 .019 0.25 0.50 4 0 8 0 8 L .019 .045 0.50 1.15 5 N 8 8 6 Note 1,7,9 NOTES: 1. The controlling dimensions are in millimeters. Inch dimensions are for reference only. 2. Dimension “D“ does not include mold flash, protrusions or gate burrs. Mold flash, protrusions

37、and gate burrs shall not exceed 0.25 mm (.009 inch) per side. 3. Dimension “E1“ does not include inter-lead flash or protrusions. Inter-lead flash or protrusions shall not exceed 0.25 mm (.009 inch) per side. 4. The chamfer on the body is optional. If it is not present, a visual index feature must b

38、e located within the crosshatched area. 5. “L“ is the length of terminal for soldering to a substrate. 6. N is the number of terminal positions. 7. Terminal numbers are shown for reference only. 8. The lead width “b“, as measured 0.36 mm (.014 inch) or greater above the seating plane, shall not exce

39、ed a maximum value of 0.61 mm (.024 inch). 9. Falls within JEDEC MS-012 variation AA. FIGURE 1. Case outline X Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95549 DLA LAND AND MARITIME COLUMBUS,

40、OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 Device type 01 Case outline X Terminal number Terminal symbol 1 OUTPUT 1 2 -INPUT 1 3 +INPUT 1 4 GND 5 +INPUT 2 6 -INPUT 2 7 OUTPUT 2 8 VDDFIGURE 2. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitt

41、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95549 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marke

42、d. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes N, Q, and V shall be

43、in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes N, Q, and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. A certificate of compliance shall be required from a QML-38535 listed manufacturer in orde

44、r to supply to the requirements of this drawing (see 6.6 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535 and herein. 3.7

45、 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. 4. VERIFICATION 4.1 Sampling and inspection. For device classes N, Q, and V, sampling and inspection procedures shall be in accordance wi

46、th MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. For device classes N, Q, and V, screening shall be in accordance with MIL-PRF-38535, and shall be

47、conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. Th

48、e burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in tabl

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1