1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R103-97. CFS 96-11-18 Monica L. Poelking B Incorporate Revision A. Update boilerplate to MIL-PRF-38535 requirements. LTG 01-11-01 Thomas M. Hess C Update the boilerplate paragraphs to the current MIL-PRF-38535
2、requirements. - LTG 09-06-16 Thomas M. Hess REV SHET REV C C C C SHEET 15 16 17 18 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD
3、 MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS. RADIATION HARDENED, SYNCHRONOUS PRESETTABLE 4-BIT BINARY COUNTER, TTL COMPATIBLE INPUTS
4、, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-04-19 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96555 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E347-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962
5、-96555 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of cas
6、e outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96555 01 V X C Federal stock class design
7、ator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriat
8、e RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generi
9、c number Circuit function 01 54ACTS163 Radiation hardened, synchronous presettable 4-bit binary counter, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentat
10、ion M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as
11、follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot
12、for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96555 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.
13、3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN) . 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5
14、 seconds). +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum package power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VDDOutput
15、voltage range (VOUT) . +0.0 V dc to VDDCase operating temperature range (TC) . -55C to +125C Maximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 4/ 1.5 Radiation features. 5/ Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) . 1 x 106Rads (Si) Single event phenomenon (SEP) ef
16、fective linear energy threshold (LET) No upsets (see 4.4.4.4) 80 MeV/(mg/cm2) Dose rate upset (20 ns pulse) 1 x 109Rads (Si)/s Dose rate survivability 1 x 1012Rads (Si)/s 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels
17、may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ Derate system propagati
18、on delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96555 DEFENSE SUPP
19、LY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwi
20、se specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-18
21、35 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Stan
22、dardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the sol
23、icitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM Inter
24、national, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicabl
25、e laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM
26、) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and
27、physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Termi
28、nal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuits. The switching waveforms and test c
29、ircuits shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo
30、reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96555 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. U
31、nless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups spe
32、cified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space li
33、mitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-P
34、RF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device
35、 classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved s
36、ource of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for
37、device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered
38、 to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For devi
39、ce class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device
40、class M devices covered by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96555 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,
41、 OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Devicetype VDDGroup A subgroups Limits 2/ Unit Min Max High level input voltage VIHAll 4.5 V 1, 2, 3 2.25 V M, D,
42、P, L, R, F, G, H 3/ All 1 2.25 All 5.5 V 1, 2, 3 2.75 M, D, P, L, R, F, G, H 3/ All 1 2.75 Low level input voltage VILAll 4.5 V 1, 2, 3 0.8 V M, D, P, L, R, F, G, H 3/ All 1 0.8 All 5.5 V 1, 2, 3 0.8 M, D, P, L, R, F, G, H 3/ All 1 0.8 High level output voltage VOHFor all inputs affecting output und
43、er test VIN= VDDor VSSIOH= -8.0 mA All 4.5 V 1, 2, 3 3.15 V M, D, P, L, R, F, G, H 3/ All 1 3.15 Low level output voltage VOLFor all inputs affecting output under test VIN= VDDor VSSIOL= 8.0 mA All 4.5 V 1, 2, 3 0.4 V M, D, P, L, R, F, G, H 3/ All 1 0.4 Input current high IIHFor input under test VIN
44、= 5.5 V For all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 +1.0 A M, D, P, L, R, F, G, H 3/ All 1 +1.0 Input current low IILFor input under test VIN= VSSFor all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A M, D, P, L, R, F, G, H 3/ All 1 -1.0 Quiescent supply current delta, TTL input levels
45、 IDD4/ For input under test VIN= VDD2.1 V For all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 1.6 mA M, D, P, L, R, F, G, H 3/ All 1 1.6 Quiescent supply current IDDQVIN= VDDor VSSAll 5.5 V 1, 2, 3 10.0 A M, D, P, L, R, F, G, H 3/ All 1 10.0 See footnotes at end of table. Provided by IHSNot for Res
46、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96555 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Test
47、 conditions 1/ -55C TC +125C unless otherwise specified Devicetype VDDGroup A subgroups Limits 2/ Unit Min Max Output current (Sink) IOL5/ VIN= VDDor VSSVOL= 0.4 V All 4.5 V and 5.5 V 1, 2, 3 8.0 mA Output current (Source) IOH5/ VIN= VDDor VSSVOH= VDD-0.4 V All 4.5 V and 5.5 V 1, 2, 3 -8.0 mA Short
48、circuit output current IOS6/ 7/ VOUT= VDDand VSSAll 5.5 V 1, 2, 3 200 mA Input capacitance CINf = 1 MHz, see 4.4.1c All 0.0 V 4 15.0 pF Output capacitance COUTf = 1 MHz, see 4.4.1c All 0.0 V 4 15.0 pF Switching power dissipation PSW8/ CL= 50 pF per switching output All 4.5 V and 5.5 V 4, 5, 6 1.9 mW/MHz Functional test 9/ VIH= 0.5 VDD, VIL= 0.8 V See 4.4.1b All 4.5 V and 5.5 V 7, 8 L H M, D, P, L, R, F, G, H 3/ All 7 L H Propagation delay time, CLK to any Q tPLH110/ CL= 50 pF, see figure 4 All 4.5 V and 4.5 V 9, 10, 11 4.0 22.0
