1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R106-97. CFS 96-11-18 Monica L. Poelking B Incorporate Revision A and update boilerplate to MIL-PRF-38535 requirements. LTG 01-11-01 Thomas M. Hess C Correct title to accurately describe device function. Add fo
2、otnote to section 1.5, radiation features. Update the boilerplate paragraphs to current requirements as specified in MIL-PRF-38535. - jak 09-06-23 Thomas M. Hess REV SHET REV C C C C SHEET 15 16 17 18 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/
3、A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A APPROVED BY Monica L. Poelking
4、 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-BIT UP/DOWN BINARY SYNCHRONOUS COUNTER, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-04-19 REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96560 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E327-09 Provided by IHSNot for ResaleNo reproduction or n
5、etworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96560 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high re
6、liability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The
7、PIN is as shown in the following example 5962 H 96560 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA ma
8、rked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Devi
9、ce type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACS169 Radiation hardened, 4-bit up/down binary synchronous counter1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance
10、 level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. T
11、he case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF
12、-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96560 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolut
13、e maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature ra
14、nge (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum package power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.
15、5 V dc Input voltage range (VIN) +0.0 V dc to VDDOutput voltage range (VOUT) . +0.0 V dc to VDDCase operating temperature range (TC) . -55C to +125C Maximum input rise or fall rate at VDD= 4.5 V (tr, tf) . 1 ns/V 4/ 1.5 Radiation features. 5/ Maximum total dose available (dose rate = 50 300 rads (Si
16、)/s) 1 x 106Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) No upsets (see 4.4.4.4) 80 MeV/(mg/cm2) 6/ Dose rate upset (20 ns pulse) 1 x 109Rads (Si)/s 6/ Dose rate latch-up . None 6/ Dose rate survivability 1 x 1012Rads (Si)/s 6/ 1/ Stresses above the absolute maximu
17、m rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange an
18、d case temperature range of -55C to +125C unless otherwise noted. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit (SEC). 6/ Limits are guaranteed by design or process, but not prod
19、uction tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96560 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION L
20、EVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those c
21、ited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlin
22、es. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Bui
23、lding 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND
24、MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Con
25、shohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has b
26、een obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect
27、 the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physi
28、cal dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as sp
29、ecified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuits. The switching waveforms and test circuits shall be as specified on figure 4. 3.2.6 Radiati
30、on exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro
31、m IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96560 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical perform
32、ance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgr
33、oup are described in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not mark
34、ing the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance m
35、ark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be
36、 required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). Th
37、e certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, app
38、endix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for devic
39、e class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activ
40、ity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in mi
41、crocircuit group number 40 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96560 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 22
42、34 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise specified Devicetype VDDGroup A subgroups Limits 3/ Unit Min Max High level input voltage VIHAll 4.5 V 1, 2, 3 3.15 V All 5.5 V 1, 2, 3 3.85 Low level input voltage VILAll 4.5
43、 V 1, 2, 3 1.35 V All 5.5 V 1, 2, 3 1.65 High level output voltage VOHFor all inputs affecting output under test, VIN= VDDor VSSIOH= -100.0 A All 4.5 V 1, 2, 3 4.25 V Low level output voltage VOLFor all inputs affecting output under test, VIN= VDDor VSSIOL= +100.0 A All 4.5 V 1, 2, 3 0.25 V Input cu
44、rrent high IIHFor input under test, VIN= 5.5 V For all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 +1.0 A Input current low IILFor input under test, VIN= VSSFor all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A Quiescent supply current IDDQVIN= VDDor VSSAll 5.5 V 1, 2, 3 10.0 A Output current
45、 (Sink) IOL4/ VIN= VDDor VSSVOL= 0.4 V All 4.5 V and 5.5 V 1, 2, 3 +8.0 mA Output current (Source) IOH4/ VIN= VDDor VSSVOH= VDD-0.4 V All 4.5 V and 5.5 V 1, 2, 3 -8.0 mA Short circuit output current IOS5/ 6/ VOUT= VDDand VSSAll 5.5 V 1, 2, 3 200 mA Input capacitance CINf = 1 MHz, see 4.4.1c All 0.0
46、V 4 15.0 pF Output capacitance COUTf = 1 MHz, see 4.4.1c All 0.0 V 4 15.0 pF Switching power dissipation PSW7/ CL= 50 pF, per switching output All 4.5 V and 5.5 V 4, 5, 6 2.3 mW/MHz Functional test 8/ VIH= 0.7 VDD, VIL= 0.3 VDDSee 4.4.1b All 4.5 V and 5.5 V 7, 8 L H See footnotes at end of table. Pr
47、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96560 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Con
48、tinued. Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise specified Devicetype VDDGroup A subgroups Limits 3/ Unit Min Max Propagation delay time, CLK to any Q tPLH19/ CL= 50 pF, see figure 4 All 4.5 V and 5.5 V 9, 10, 11 4.0 24.0 ns tPHL19/ CL= 50 pF, see figure 4 All 4.5 V and 5.5 V 9, 10, 11 4.0 24.0 Propagation delay time, CLK to RCO tPLH29/ CL= 50 pF, see figure 4 All 4.5 V and 4.5 V 9
