DLA SMD-5962-96597 REV C-2013 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS DUAL 4-INPUT NOR GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R137-97. - JB 96-11-20 Monica L. Poelking B Add limit for linear energy threshold (LET) with no latch-up in section 1.5. Update the boilerplate to the requirements of MIL-PRF-38535. Editorial changes throughout

2、. - TVN 07-01-22 Thomas M. Hess C To correct switching waveforms input/output test limits to figure 4. Add test equivalent circuits and footnote 5 to figure 4. Add paragraph 2.2 for ASTM F1192 document. Delete class M requirements throughout.MAA 13-02-19 Thomas M. Hess REV SHEET REV C SHEET 15 REV S

3、TATUS OF SHEETS REV C C C C C C C C C C C C C C SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIE

4、S OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NOR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-07-11 REVISION LEVEL C SIZE A CAGE CODE 67268 5962-965

5、97 SHEET 1 OF 15 DSCC FORM 2233 APR 97 5962-E197-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96597 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOP

6、E 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice

7、 of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96597 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.

8、5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit funct

9、ion as follows: Device type Generic number Circuit function 01 54ACTS4002 Radiation hardened, dual 4-input NOR gate, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirement

10、s documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 L

11、ead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96597 REVISION LEVEL C

12、SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD + 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity c

13、urrent (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply vo

14、ltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VDDOutput voltage range (VOUT). 0.0 V dc to VDDMaximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 4/ Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. 5/ Maximum total dose available

15、 (dose rate = 50 300 rads (Si)/s) . 1 x 106Rads (Si) Single event phenomenon (SEP): No SEU occurs at effective LET (see 4.4.4.4) . 80 MeV-cm2/mg 6/ No SEL occurs at effective LET (see 4.4.4.4) . 120 MeV-cm2/mg 6/ Dose rate upset (20 ns pulse) 1 x 109Rads (Si)/s 6/ Latch-up . None 6/ Dose rate surviv

16、ability 1 x 1012Rads (Si)/s 6/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the par

17、ameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluatio

18、n circuit (SEC). 6/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND

19、AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96597 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Un

20、less otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits

21、. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from

22、the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in

23、 the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org/ or from ASTM International, 100 B

24、arr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regu

25、lations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The mod

26、ification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimens

27、ions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections

28、. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be

29、as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96597 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Radiation exposure circuit.

30、 The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified

31、herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The

32、electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufactur

33、er has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5

34、.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certi

35、ficate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm th

36、at the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein . 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawi

37、ng. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96597 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test

38、Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max High level input voltage VIH All 4.5 V 1, 2, 3 2.25 V M, D, P, L, R, F, G, H 3/ All 1 2.25 All 5.5 V 1, 2, 3 2.75 M, D, P, L, R, F, G, H 3/ All 1 2.75 Low level input voltage VI

39、L All 4.5 V 1, 2, 3 0.8 V M, D, P, L, R, F, G, H 3/ All 1 0.8 All 5.5 V 1, 2, 3 0.8 M, D, P, L, R, F, G, H 3/ All 1 0.8 High level output voltage VOH For all inputs affecting output under test, VIN= VDDor VSSIOH= -8.0 mA All 4.5 V 1, 2, 3 3.15 V M, D, P, L, R, F, G, H 3/ All 1 3.15 Low level output

40、voltage VOL For all inputs affecting output under test, VIN= VDDor VSSIOL= 8.0 mA All 4.5 V 1, 2, 3 0.4 V M, D, P, L, R, F, G, H 3/ All 1 0.4 Input current high IIH For input under test, VIN= VDDFor all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 +1.0 A M, D, P, L, R, F, G, H 3/ All 1 +1.0 Input c

41、urrent low IIL For input under test, VIN= VSSFor all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A M, D, P, L, R, F, G, H 3/ All 1 -1.0 Output current (source) IOH4/ For output under test, VOUT= VDD - 0.4 V VIN= VDDor VSSAll 4.5 V and 5.5 V 1, 2, 3 -8.0 mA M, D, P, L, R, F, G, H 3/ All 1 -8.0

42、 Output current (sink) IOL4/ For output under test, VOUT= 0.4 V VIN= VDDor VSSAll 4.5 V and 5.5 V 1, 2, 3 8.0 mA M, D, P, L, R, F, G, H 3/ All 1 8.0 Quiescent supply current IDDQVIN= VDDor VSSAll 5.5 V 1, 2, 3 10.0 A M, D, P, L, R, F, G, H 3/ All 1 10.0 Quiescent supply current delta, TTL input leve

43、ls IDDQ5/ For input under test, VIN= VDD- 2.1 V For all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 1.6 mA M, D, P, L, R, F, G, H 3/ All 1 1.6 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAW

44、ING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96597 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min

45、 Max Short circuit output current IOS6/ 7/ VOUT= VDDand VSSAll 5.5 V 1, 2, 3 200 mA Input capacitance CINf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF Output capacitance COUTf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF Switching power dissipation PSW8/ CL= 50 pF, per switching output All 4.5 V and 5.5 V 4, 5

46、, 6 1.9 mW/ MHz M, D, P, L, R, F, G, H 3/ All 4 1.9 Functional test 9/ VIH= 0.5 VDD, VIL= 0.8 V See 4.4.1b All 4.5 V and 5.5 V 7, 8 L H M, D, P, L, R, F, G, H 3/ All 7 L H Propagation delay time, any input to output tPLH10/ CL= 50 pF minimum See figure 4 All 4.5 V and 5.5 V 9, 10, 11 2.0 14.0 ns M,

47、D, P, L, R, F, G, H 3/ All 9 2.0 14.0 tPHL10/ CL= 50 pF minimum See figure 4 All 4.5 V and 5.5 V 9, 10, 11 1.0 12.0 M, D, P, L, R, F, G, H 3/ All 9 1.0 12.0 1/ Each input/output, as applicable, shall be tested at the specified temperature, for the specified limits, to the tests in table IA herein. O

48、utput terminals not designated shall be high level logic, low level logic, or open, except for the IDDQand IDDQtests, the output terminals shall be open. When performing the IDDQand IDDQtests, the current meter shall be placed in the circuit such that all current flows through the meter. 2/ For negative and positive voltage and current values, the sign designates the potential difference in reference to VSSand the direction of current flow, respectively; and the absolute value of the magnitude, not the sign, is relative to the minimum a

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