1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R162-97. CFS 97-02-24 Monica L. Poelking B Changes in accordance with NOR 5962-R398-97. - RLC 97-07-29 Raymond L. Monnin C Add device class T criteria. Editorial changes throughout. - JAK 98-12-09 Monica L. Poe
2、lking D Correct the total dose rate and update RHA levels. - LTG 99-04-28 Monica L. Poelking E Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. - LTG 05-09-07 Thomas M. Hess REV SHET REV E E E E E E E SHEET 15 16 17 18 19 20 21 REV STATUS REV E E E E E D D D C C E C C
3、E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rick C. Officer DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L.
4、Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-13 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, DUAL 4-STAGE STATIC SHIFT REGISTER WITH SERIAL INPUT/ PARALLEL OUTPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-96624 SHEET 1 OF 21 DSCC
5、 FORM 2233 APR 97 5962-E488-05 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96624 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope.
6、 This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflecte
7、d in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptabi
8、lity in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96624 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1
9、 RHA designator. Device classes Q, T, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator.
10、 A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 4015B Radiation hardened, CMOS, dual 4-stage static shift register with serial input/parallel output. 02 4015BN Radiation hardened
11、, CMOS, dual 4-stage static shift register with serial input/parallel output with neutron irradiated die 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-cert
12、ification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers
13、 approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL
14、-PRF-38535 for device classes Q, T, and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96624 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISI
15、ON LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.5 V dc to +20 V dc DC input voltage range (VIN) -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input (IIN). 10 mA Device dissipation per output transistor . 100 mW Storage temperature
16、range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +265C Thermal resistance, junction-to-case (JC): Case outline E 24C/W Case outline X 29C/W Thermal resistance, junction-to-ambient (JA): Case outline E 73C/W Case outline X 114C/W Junction temperature (TJ) +175C Maximum package p
17、ower dissipation at TA= +125C (PD): 4/ Case outline E 0.68 W Case outline X 0.44 W 1.4 Recommended operating conditions. Supply voltage range (VDD) +3.0 V dc to +20 V dc Case operating temperature range (TC). -55C to +125C Input voltage range (VIN) +0.0 V to VDDOutput voltage range (VOUT). +0.0 V to
18、 VDD1.5 Radiation features: Maximum total dose available (dose rate = 50 300 rad (Si)/s). 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET), no upsets (see 4.4.4.5). 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) 5 x 108Rads (Si)/s 5/ Dose rate latch-up 2 x 108
19、Rads (Si)/s 5/ Dose rate survivability 5 x 1011Rads (Si)/s 5/ Neutron irradiated (device type 02) 1 x 1014neutrons/cm21/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Un
20、less otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking
21、 or derate linearly (the derating is based on JA) at the following rate: Case outline E . 13.7 mW/C Case outline X . 8.8 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRA
22、WING SIZE A 5962-96624 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the exte
23、nt specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method
24、 Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dl
25、a.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawi
26、ng takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T, and V shall be in accordance with MIL-PRF-38535 and as sp
27、ecified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-J
28、AN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein
29、 for device classes Q, T, and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shal
30、l be as specified on figure 2. 3.2.4 Load circuit and switching waveforms. The load circuit and switching waveforms shall be as specified on figure 3. 3.2.5 Irradiation test connections. The irradiation test connections shall be as specified in table III. Provided by IHSNot for ResaleNo reproduction
31、 or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96624 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherw
32、ise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in tab
33、le IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the
34、 manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T, and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535,
35、appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T, and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device class
36、es Q, T, and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved sou
37、rce of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q, T, and V, the requirements of MIL-PRF-38535 and herein or fo
38、r device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T, and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits del
39、ivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. Fo
40、r device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. D
41、evice class M devices covered by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96624 DEFENSE SUPPLY CENTER COLUMBUS COL
42、UMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Supply current IDDVDD= 5.0 V, VIN= VDDor GND All 1, 3 1/ 5.0 A
43、 2 1/ 150.0 VDD= 10 V, VIN= VDDor GND 1, 3 1/ 10.0 2 1/ 300.0 DD= 15 V, VIN= VDDor GND 1, 3 1/ 10.0 2 1/ 600.0 VDD= 20 V, VIN= VDDor GND 1 10.0 2 1000.0 M, D, P, L, R 2/ 1 25.0 VDD= 18 V, VIN= VDDor GND 3 10.0 Low level output IOLVDD= 5 V All 1 0.53 mA current (sink) VO= 0.4 V 2 1/ 0.36 VIN= 0.0 V o
44、r VDD3 1/ 0.64 DD= 10 V All 1 1.4 VO= 0.5 V 2 1/ 0.9 VIN= 0.0 V or VDD3 1/ 1.6 DD= 15 V All 1 3.5 VO= 1.5 V 2 1/ 2.4 VIN= 0.0 V or VDD3 1/ 4.2 High level output IOHVDD= 5 V All 1 -0.53 mA current (source) VO= 4.6 V 2 1/ -0.36 VIN= 0.0 V or VDD3 1/ -0.64 DD= 5 V All 1 -1.8 VO= 2.5 V 2 1/ -1.15 VIN= 0
45、.0 V or VDD3 1/ -2.0 DD= 10 V All 1 -1.4 VO= 9.5 V 2 1/ -0.9 VIN= 0.0 V or VDD3 1/ -1.6 DD= 15 V All 1 -3.5 VO= 13.5 V 2 1/ -2.4 VIN= 0.0 V or VDD3 1/ -4.2 Input leakage IILVDD= 20 V, VIN= VDDor GND All 1 -100 nA current low 2 -1000 VDD= 18 V, VIN= VDDor GND 3 -100 Input leakage IIHVDD= 20 V, VIN= V
46、DDor GND All 1 100 current high 2 1000 VDD= 18 V, VIN= VDDor GND 3 100 See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96624 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3
47、990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Output voltage VOHVDD= 5 V, no load 1/ All 1, 2, 3 4.95 V high VDD= 1
48、0 V, no load 1/ 1, 2, 3 9.95 VDD= 15 V, no load 3/ 1, 2, 3 14.95 Output voltage VOLVDD= 5 V, no load 1/ All 1, 2, 3 0.05 low VDD= 10 V, no load 1/ 1, 2, 3 0.05 VDD= 15 V, no load 1, 2, 3 0.05 Input voltage low VILVDD= 5 V VOH 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVOL V VDD= 2
49、0 V, VIN= VDDor GND 7 VDD/2 VDD/2 DD= 18 V, VIN= VDDor GND All 8A M. D, P, L, R 2/ 7 VDD= 3.0 V, VIN= VDDor GND All 8B M. D, P, L, R 2/ 7 Input capacitance CINAny input, see 4.4.1c 1/ All 4 7.5 pFtPHL1, VDD= 5 V, VIN= VDDor GND All 9 320 ns tPLH110, 11 432 4/ M. D, P, L, R 2/ 9 432 Propagation delay time, c
