1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add Appendix A for a microcircuit die. Changes in accordance with N.O.R. 5962-R032-97. 96-11-06 R. MONNIN B Make changes to boilerplate and add device class T device. - ro 98-12-03 R. MONNIN C Add device type 02. - ro 00-08-04 R. MONNIN D Make ch
2、ange to propagation delay test for device type 02 as specified under table I. - ro 00-08-29 R. MONNIN E Make change to propagation delay test for device type 02 as specified under table I. Updated boilerplate to reflect current requirements. - lgt 01-09-06 R. MONNIN F Make correction to DC diode inp
3、ut current description as specified in 1.3. - ro 02-07-09 R. MONNIN G Add vendor CAGE F8859. Updated footnote 2/ in table I to accommodate RHA designator “D”. - rrp 02-11-27 R. MONNIN H Make corrections to title block, figure 1 and figure 2. - ro 05-04-01 R. MONNIN J Make change to the output skew t
4、est subgroup 10 limit for device type 02 only as specified under Table I. Add paragraphs 2.2 and 6.7. Make changes to paragraph 4.4.4.3 and Table IIB. - ro 09-04-07 J. RODENBECK K Add device types 03, 04 and table IB. Make changes to footnote 1/ and add footnote 3/ under Table IIA. Delete Table III
5、and references to device class M requirements. - ro 13-02-27 C. SAFFLE L Add case outline Y. Add note under figure 1. - ro 13-06-05 C. SAFFLE REV SHEET REV L L L L L L L L L SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV L L L L L L L L L L L L L L OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 P
6、MIC N/A PREPARED BY SANDRA ROONEY DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY SANDRA ROONEY APPROVED BY MICHAEL A. FRYE MICROC
7、IRCUIT, DIGITAL-LINEAR, RADIATION HARDENED CMOS, QUAD DIFFERENTIAL LINE DRIVER, MONOLITHIC SILICON DRAWING APPROVAL DATE 95-11-21 AMSC N/A REVISION LEVEL L SIZE A CAGE CODE 67268 5962-96663 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E365-13 Provided by IHSNot for ResaleNo reproduction or networking pe
8、rmitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96663 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device c
9、lass Q), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) lev
10、els is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 - 96663 01 V E
11、A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels a
12、nd are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 26C31RH Radiation hardened quad differential line driver 02 26CLV31RH Radiation
13、hardened quad differential line driver 03 26C31EH Radiation hardened quad differential line driver 04 26CLV31EH Radiation hardened quad differential line driver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device cl
14、ass Device requirements documentation Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in M
15、IL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack Y CDFP4-F16 16 Flat pack with grounded lid 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V. Provided by IHS
16、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96663 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage . -0.5 V dc to +7.0 V dc I
17、NPUTS, E, E voltage . -0.5 V dc to VDD+ 0.5 V dc Output voltage with power on or off (0 V) -0.5 V dc to +7.0 V dc DC diode input current (any input) . 20 mA DC drain current (any one output) . 350 mA DC VDDor ground current 400 mA Storage temperature range -65C to +150C Maximum package dissipation (
18、TA= +125C) (PD): 2/ Case outline E . 0.68 W Case outlines X and Y . 0.44 W Thermal resistance, junction-to-case (JC): Case outline E . 24C/W Case outline X and Y . 29C/W Thermal resistance, junction-to-ambient (JA): Case outline E . 73C/W Case outlines X and Y . 114C/W Lead temperature (soldering, 1
19、0 seconds) +300C Junction temperature (TJ) +175C 1.4 Recommended operating conditions. Operating voltage range: Device types 01 and 03 +4.5 V dc to +5.5 V dc Device types 02 and 04 +3.0 V dc to +3.6 V dc Input rise and fall time . 500 ns maximum Low input voltage (VIL) 0 V to 0.3 VDDmaximum High inp
20、ut voltage (VIH) . VDDto +0.7 VDDminimum Ambient operating temperature (TA) . -55C to +125C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ If device power exceeds pa
21、ckage dissipation capacity, provide heat sinking or derate linearly (the derating is based on (JA) at the following rates: Case outline E . 13.7 mW/C Case outlines X and Y . 8.8 mW/C Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCU
22、IT DRAWING SIZE A 5962-96663 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device types 01 and 02: Device classes Q or V 300 krads(Si) 3/ Device class T 100 krads(Si
23、) 3/ Device types 03 and 04 . 300 krads(Si) 4/ Maximum total dose available (dose rate 0.01 rad(Si)/s): Device types 03 and 04 . 50 krads(Si) 4/ Single event phenomena (SEP): No SEL occurs at effective LET (see 4.4.4.2.2) . 100 MeV/mg/cm25/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, stand
24、ards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integr
25、ated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-
26、HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a p
27、art of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Hea
28、vy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawin
29、g and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 3/ Device types 01 and 02 radiation end point limits for the noted parameters are guaranteed on
30、ly for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si) for device class V or Q and 100 krads(Si) for device class T. 4/ Device types 03 and 04 radiation end point limits for the noted parameters are guaranteed only for the conditions as s
31、pecified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 5/ Limits obtained during technology characterization/qualification, guaranteed by design or process, but not production tested unless specified by the
32、 customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96663 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 5 DSCC FORM 2234 APR 97 3. REQUIR
33、EMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or func
34、tion as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T
35、and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposu
36、re circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrica
37、l performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests fo
38、r each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option o
39、f not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a
40、“QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitt
41、ed to DLA Land and Maritime -VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required f
42、or device classes Q, T and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96663 DLA LAND AND MARITIME COLUMBUS,
43、OHIO 43218-3990 REVISION LEVEL L SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max High level output voltage VOHVDD= 4.5 V and 5.5 V 3/ 4/ IO= -20 mA
44、1,2,3 01,03 2.5 V VDD= 3.0 V and 3.6 V 3/ 4/ IO= -20 mA 02,04 1.8 Low level output voltage VOLVDD= 4.5 V and 5.5 V 3/ 4/ IO= 20 mA 1,2,3 01,03 0.5 V VDD= 3.0 V and 3.6 V 3/ 4/ IO= 20 mA 02,04 0.5 Differential output voltage VT, VT VDD= VIH= 4.5 V, 5/ RL= R1+ R2, VIL= 0 V 1,2,3 01,03 2.0 V VDD= VIH=
45、3.0 V, 5/ RL= R1+ R2, VIL= 0 V 02,04 1.8 Difference in differential output |VT| - | VT | VDD= VIH= 4.5 V, 5/ RL= R1+ R2, VIL= 0 V 1,2,3 01,03 0.4 V VDD= VIH= 3.0 V, 5/ RL= R1+ R2, VIL= 0 V 02,04 0.4 Common mode output voltage VOS, VOS VDD= VIH= 4.5 V, 5/ RL= R1+ R2, VIL= 0 V 1,2,3 01,03 3.0 V VDD= V
46、IH= 3.0 V, 5/ RL= R1+ R2, VIL= 0 V 02,04 3.0 Difference in common mode output voltage |VOS| - | VOS| VDD= VIH= 4.5 V, 5/ RL= R1+ R2, VIL= 0 V 1,2,3 01,03 0.4 V VDD= VIH= 3.0 V, 5/ RL= R1+ R2, VIL= 0 V 02,04 0.4 High level input voltage VIHVDD= 4.5 V, 5.5 V 6/ 1,2,3 01,03 0.7VDDV VDD= 3.0 V, 3.6 V 6/
47、 02,04 0.7VDDLow level input voltage VILVDD= 4.5 V, 5.5 V 6/ 1,2,3 01,03 0.3VDDV VDD= 3.0 V, 3.6 V 6/ 02,04 0.3VDDSee footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96663 DLA LAND
48、AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Standby supply current IDDSBVDD= 5.5 V, Output = OPEN, VIN= VDDor GND 1,2,3 01,03 500 A VDD= 3.6 V, Output = OPEN, VIN= VDDor GND 02,04 100 Three-state output leakage current IOZVDD= 5.5 V, 7/ force voltage = 0 V or VCC1,2,3 01,03 5 A VDD= 3.6 V, 7/ force voltage = 0 V or VCC02,04 5 Input leakage IIN
