DLA SMD-5962-96723 REV C-2003 MICROCIRCUIT LINEAR RADIATION HARDENED TRIPLE LINE RECEIVERS MONOLITHIC SILICON《抗辐射三重线路接收机硅单片电路线型微电路》.pdf

上传人:amazingpat195 文档编号:701047 上传时间:2019-01-01 格式:PDF 页数:11 大小:62.43KB
下载 相关 举报
DLA SMD-5962-96723 REV C-2003 MICROCIRCUIT LINEAR RADIATION HARDENED TRIPLE LINE RECEIVERS MONOLITHIC SILICON《抗辐射三重线路接收机硅单片电路线型微电路》.pdf_第1页
第1页 / 共11页
DLA SMD-5962-96723 REV C-2003 MICROCIRCUIT LINEAR RADIATION HARDENED TRIPLE LINE RECEIVERS MONOLITHIC SILICON《抗辐射三重线路接收机硅单片电路线型微电路》.pdf_第2页
第2页 / 共11页
DLA SMD-5962-96723 REV C-2003 MICROCIRCUIT LINEAR RADIATION HARDENED TRIPLE LINE RECEIVERS MONOLITHIC SILICON《抗辐射三重线路接收机硅单片电路线型微电路》.pdf_第3页
第3页 / 共11页
DLA SMD-5962-96723 REV C-2003 MICROCIRCUIT LINEAR RADIATION HARDENED TRIPLE LINE RECEIVERS MONOLITHIC SILICON《抗辐射三重线路接收机硅单片电路线型微电路》.pdf_第4页
第4页 / 共11页
DLA SMD-5962-96723 REV C-2003 MICROCIRCUIT LINEAR RADIATION HARDENED TRIPLE LINE RECEIVERS MONOLITHIC SILICON《抗辐射三重线路接收机硅单片电路线型微电路》.pdf_第5页
第5页 / 共11页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update boilerplate to reflect current requirements. rrp 01-06-05 R. MONNIN B Make changes to the conditions for VOHand VOLtests in table I. -rrp 02-05-03 R. MONNIN C Made changes to 1.5, to footnotes 5/ and 6/ at end of table I, and to group E in

2、spection paragraphs. -rrp 03-04-01 R. MONNIN REV SHET REV SHET REV STATUS REV C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY Sandra Rooney DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Sandra Rooney COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil

3、THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, RADIATION HARDENED, TRIPLE LINE RECEIVERS, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-20 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96723 SH

4、EET 1 OF 10 DSCC FORM 2233 APR 97 5962-E326-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96723 DEFENSE SUPPLY CENTER COLU

5、MBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are

6、available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96723 01 V X C Federal stock class designator RHA designator (see 1.2.1)

7、Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M

8、 RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-

9、246RH Radiation hardened DI triple line receiver 02 HS-248RH Radiation hardened DI triple party-line receiver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self

10、-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline

11、letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction o

12、r networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96723 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) -0.5 V dc to +8.0 V dc Supply voltage (VEE

13、) -8.0 V dc to +0.5 V dc Output voltage . -0.5 V dc to +6.0 V dc Input voltage -1.0 V dc to +1.0 V dc Input current -25 mA to +25 mA Output current . 50 mA Storage temperature range . -65C to +150C Maximum package power dissipation at TA= +125C (PD): Case outline C . 0.68 W 2/ Case outline X . 0.43

14、W 2/ Thermal resistance, junction-to-case (JC): Case outline C . 24C/W Case outline X . 30C/W Thermal resistance, junction-to-ambient (JA): Case outline C . 74C/W Case outline X . 116C/W Lead temperature (soldering, 10 seconds) . +275C Junction temperature (TJ) +175C 1.4 Recommended operating condit

15、ions. Operating voltage range +4.5 V dc to +5.5 V dc Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features Maximum total dose available (dose rate = 50 300 rads/s) 2 x 105Rads (Si) 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following

16、 specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in th

17、e solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. 1/ Stresses above

18、 the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ If device power exceeds package dissipation capacity, provide heat sinking or derate linearly (the derating is based on JA) at the follow

19、ing rates: Case outline C 13.5 mW/C Case outline X 8.6 mW/C Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96723 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 4 DSCC FORM 22

20、34 APR 97 HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins A

21、venue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a sp

22、ecific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM

23、 plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, c

24、onstruction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal

25、connections shall be as specified on figure 1. 3.2.3 Load circuit and switching waveform. The load circuit and switching waveform shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified in table III. 3.3 Electrical performance charact

26、eristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The elect

27、rical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages

28、 where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with

29、MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as requi

30、red in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance s

31、hall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for d

32、evice classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-3

33、8535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96723 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVI

34、SION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Input resistance RINVCC= 5.0 V, VEE= -5.0 V 1,2,3 01 39 90 Pullup resistance RPUVCC= 5.0 V,

35、 VEE= -5.0 V 1,2,3 02 4.1 10.5 k Logical “1” output voltage VOHVCC= 4.5 V, VEE= -4.5 V, IOH= -120 A 2/ 1,2,3 02 2.5 V VCC= 4.5 V, VEE= -4.5 V, IOL= 10 mA 3/ 01 0.45 Logical “0” output voltage VOLVCC= 4.5 V, VEE= -4.5 V, IOL= 9.6 mA 3/ 1,2,3 02 0.45 V Logical “0” output voltage, input short circuit V

36、OLSCVCC= 4.5 V, VEE= -4.5 V, IOL= 3.2 mA 4/ 1 01, 02 0.45 V VCC= 5.5 V, VEE= -5.5 V 5/ 6/ 01 6.6 Power supply current ICCVCC= 5.5 V, VEE= -5.5 V 5/ 6/ 1 02 7.8 mA Power supply current IEEVCC= 5.5 V, VEE= -5.5 V 5/ 6/ 1 01, 02 6.0 mA Propagation delay TPLHTPHLVCC= 4.5 V, VEE= -4.5 V See figure 2 9,10

37、,11 01, 02 30 ns 1/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, R of irradiation. However, this device is only tested at the “R” level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation el

38、ectrical measurements for any RHA level, TA= +25C. 2/ (+)IIN= 1.5 mA; (-)Input = Open. For device type 02, use external 50 resistor or (+)IIN= 0.75 mV. See figure 2. 3/ (+)Input = Open; (-)IIN= 1.5 mA. For device type 02, use external 50 resistor or (-)IIN= 0.75 mV. See figure 2. 4/ Both inputs shor

39、ted to GND; or both inputs open such that 50 termination resistors are in the circuit. 5/ (+)Input = Open; (-)IIN= 3 mA. External 50 resistors needed for device type 02. 6/ (+)IIN= 3 mA; (-)Input = Open. External 50 resistors needed for device type 02. 3.8 Notification of change for device class M.

40、For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring ac

41、tivity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

42、 microcircuit group number 53 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96723 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 6 DSCC FORM

43、 2234 APR 97 Device types 01 and 02 Case outlines C and X Terminal number Terminal symbol 1 (-)INPUT 1 2 (+)INPUT 3 (R1)OUTPUT 1 4 (-)INPUT 2 5 (+)INPUT 6 (R2)OUTPUT 2 7 GND 8 (-)INPUT 3 9 (+)INPUT10 (R3)OUTPUT 3 11 (R3)VEE12 (R1 & R2)VEE13 (R3)VCC14 (R1 & R2)VCCFIGURE 1. Terminal connections. Provi

44、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96723 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 NOTES: Input: TTLH 10 ns TTHL 10 ns pw = 500 ns f = 1 M

45、Hz NOTE: External 50 resistors needed for device type 02. FIGURE 2. Load circuit and switching waveform. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96723 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 432

46、16-5000 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The mo

47、dification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and

48、 shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activ

展开阅读全文
相关资源
猜你喜欢
  • BS ISO 15238-2016 Solid mineral fuels Determination of total cadmium content of coal《固体矿物燃料 煤中镉的总含量测定》.pdf BS ISO 15238-2016 Solid mineral fuels Determination of total cadmium content of coal《固体矿物燃料 煤中镉的总含量测定》.pdf
  • BS ISO 15239-2005 Solid mineral fuels - Evaluation of the measurement performance of on-line analysers《固体矿物燃料 在线分析仪测量性能的评价》.pdf BS ISO 15239-2005 Solid mineral fuels - Evaluation of the measurement performance of on-line analysers《固体矿物燃料 在线分析仪测量性能的评价》.pdf
  • BS ISO 15241-2012 Rolling bearings Symbols for physical quantities《滚动轴承 物理量符号》.pdf BS ISO 15241-2012 Rolling bearings Symbols for physical quantities《滚动轴承 物理量符号》.pdf
  • BS ISO 15242-3-2017 Rolling bearings Measuring methods for vibration Radial spherical and tapered roller bearings with cylindrical bore and outside surface《滚动轴承 振动测量方法 带圆孔和外表面的向心球面.pdf BS ISO 15242-3-2017 Rolling bearings Measuring methods for vibration Radial spherical and tapered roller bearings with cylindrical bore and outside surface《滚动轴承 振动测量方法 带圆孔和外表面的向心球面.pdf
  • BS ISO 15242-4-2017 Rolling bearings Measuring methods for vibration Radial cylindrical roller bearings with cylindrical bore and outside surface《滚动轴承 振动测量方法 带有圆柱孔和外表面的径向圆柱形滚动轴承》.pdf BS ISO 15242-4-2017 Rolling bearings Measuring methods for vibration Radial cylindrical roller bearings with cylindrical bore and outside surface《滚动轴承 振动测量方法 带有圆柱孔和外表面的径向圆柱形滚动轴承》.pdf
  • BS ISO 15243-2017 Rolling bearings Damage and failures Terms characteristics and causes《滚动轴承 损害和故障 术语、特性和成因》.pdf BS ISO 15243-2017 Rolling bearings Damage and failures Terms characteristics and causes《滚动轴承 损害和故障 术语、特性和成因》.pdf
  • BS ISO 15247-2015 Zinc sulfide concentrates Determination of silver content Acid dissolution and flame atomic absorption spectrometric method《硫化锌精矿 银含量的测定 酸溶解和火焰原子吸收光谱法》.pdf BS ISO 15247-2015 Zinc sulfide concentrates Determination of silver content Acid dissolution and flame atomic absorption spectrometric method《硫化锌精矿 银含量的测定 酸溶解和火焰原子吸收光谱法》.pdf
  • BS ISO 15314-2005 Plastics - Methods for marine exposure《塑料 海上曝光法》.pdf BS ISO 15314-2005 Plastics - Methods for marine exposure《塑料 海上曝光法》.pdf
  • BS ISO 15323-2002 Dried milk protein products Determination of nitrogen solubility index《奶粉蛋白质产品 氮溶解指数的测定》.pdf BS ISO 15323-2002 Dried milk protein products Determination of nitrogen solubility index《奶粉蛋白质产品 氮溶解指数的测定》.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1