1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Editorial changes to table I 8/ and changes to case outlines X and Y. - tmh 99-11-24 Monica L. PoelkingREVSHEET 55REVSHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54REV A A A A ASHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
2、31 32 33 34REV AREV STATUSOF SHEETSSHET 1 2 3 4 5 6 7 8 9 1011121314PMIC N/APREPARED BYThanh V. NguyenCHECKED BYThanh V. NguyenDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216APPROVED BYMonica L. PoelkingDRAWING APPROVAL DATE99-02-17MICROCIRCUIT, DIGITAL, DIGITAL SIGNALPROCESSOR, 32-BIT, MONOLITHI
3、C SILICONSIZEACAGE CODE672685962-96745STANDARDMICROCIRCUITDRAWINGTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAND AGENCIES OF THEDEPARTMENT OF DEFENSEAMSC N/AREVISION LEVELASHEET 1 OF 55DSCC FORM 2233APR 97 5962-E057-00DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlim
4、ited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZEA5962-96745STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVEL SHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing documents two product assu
5、rance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in thePart or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels
6、are reflected in thePIN.1.2 PIN. The PIN is as shown in the following example:5962 - 96745 01 Q X XFederal RHA Device Device Case Leadstock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/Drawing number1.2.1 RHA designator
7、. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates
8、 a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 21062 32-bit digital signal processor, 2 Mbit SRAM02 21060 32-bit digital signal processor, 4 Mbit SRAM1.2.3 Device class designator. The device class des
9、ignator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-certification to the requirements for MIL-STD-883 compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and
10、 qualification to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleX See figure 1 240 Gull wing flatpack cavity down heat sinkY See figure 1 240 Gull wing flatpack cavity up heat sink
11、T See figure 1 240 Flatpack with non-conductive tie-barcavity down heat sinkU See figure 1 240 Flatpack with non-conductive tie-barcavity up heat sink1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendixA for device class M.Provided
12、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZEA5962-96745STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVEL SHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/Supply voltage range (VDD). -0.3 V dc t
13、o +7.0 V dcInput voltage range (VIN). -0.3 V dc to VDD + 0.3 V dcOutput voltage range (VOUT) . -0.3 V dc to VDD + 0.3 V dcLoad capacitance . 200 pFLead temperature (soldering, 5 seconds). +280G71CStorage temperature range (TSTG) . -65G71C to +150G71CMaximum power dissipation (PD) 5 WThermal resistan
14、ce junction-to-case (G34JC):Cases X,Y, T, and U 0.24G71C/W1.4 Recommended operating conditions.Supply voltage range (VDD). +4.75 V dc to +5.25 V dcCase operating temperature range (TC) -55G71C to +125G71C1.5 Digital logic testing for device classes Q and V.Fault coverage measurement of manufacturing
15、logic tests (MIL-STD-883, test method 5012) . XX percent 2/2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these d
16、ocuments are those listed inthe issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DE
17、FENSEMIL-STD-883 - Test Methods and Procedures for Microelectronics.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Microcircuit
18、Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)_1/ Stress above the absolute maximum rating may cause permanent damage to the device.
19、Extended operation at themaximum levels may degrade performance and affect reliability.2/ Values are not available.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZEA5962-96745STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO
20、 43216-5000REVISION LEVEL SHEET4DSCC FORM 2234APR 972.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.Unless otherwise specified, the issues of the documents which are DOD adopted are those listed in the issue of the DODISScited in
21、 the solicitation. Unless otherwise specified, the issues of documents not listed in the DODISS are the issues of thedocuments cited in the solicitation.INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS (IEEE)IEEE Standard 1149.1 - IEEE Standard Test Access Port and Boundary Scan Architecture.(Appli
22、cations for copies should be addressed to the Institute of Electrical and Electronics Engineers, 445 Hoes Lane,Piscataway, NJ 08854-4150.)(Non-Government standards and other publications are normally available from the organizations that prepare or distributethe documents. These documents may also b
23、e available in or through libraries or other informational services.)2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the textof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regul
24、ations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodificat
25、ion in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.2 Design, construction, and physical dimensions. The
26、 design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 and figure 1 herein.3.2.2 Terminal connection
27、s. The terminal connections shall be as specified on figure 2.3.2.3 Block diagram. The block diagram shall be as specified on figure 3.3.2.4 Boundary scan instruction codes. The boundary scan instruction codes shall be as specified on figure 4.3.2.5 Timing waveforms. The timing waveforms shall be as
28、 specified on figure 5.3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as specified when available.3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and postirradiati
29、on parameter limits are as specified in table I and shall apply over the fullcase operating temperature range.3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electricaltests for each subgroup are defined in table I.3.5 Marking. The
30、 part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the
31、device. For RHA product using this option, theRHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark. The certification mar
32、k for device classes Q and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZEA5962-96745STANDARDMI
33、CROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVEL SHEET5DSCC FORM 2234APR 973.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535listed manufacturer in order to supply to the requirements of thi
34、s drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of sup
35、ply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance. A certificate of conformance as required for
36、device classes Q and V in MIL-PRF-38535 orfor device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2herein) involvi
37、ng devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retainthe option to review the manufacturers facility and applicable required documentation. Offs
38、hore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be inmicrocircuit group number 132 (see MIL-PRF-38535, appendix A).3.11 IEEE 1149.1 compliance. Theses devices s
39、hall be compliant to IEEE 1149.1.4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance withMIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM pla
40、nshall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall bein accordance with MIL-PRF-38535, appendix A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conductedon all d
41、evices prior to qualification and technology conformance inspection. For device class M, screening shall be inaccordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.4.2.1 Additional criteria for device class M.a. Burn-in test, method
42、 1015 of MIL-STD-883.(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision levelcontrol and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specifythe inputs, outputs, biases, and power d
43、issipation, as applicable, in accordance with the intent specified in testmethod 1015.(2) TA = +125G71C, minimum.b. Interim and final electrical test parameters shall be as specified in table II herein.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-
44、SIZEA5962-96745STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVEL SHEET6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics.LimitsTest Symbol Test conditions 1/-55G71C G64 TC G64 +125G71CUnless otherwise specifiedGroup AsubgroupsDevicety
45、peMin MaxUnitHigh level input voltage2/VIH VDD = max 1, 2, 3 All 2.0High level input voltage3/VIHCR VDD = max 1, 2, 3 All 2.2Low level input voltage2/ 3/VIL VDD = min 1, 2, 3 All 0.8High level outputvoltage 4/ 5/VOH VDD = min, IOH = -2.0 mA 1, 2, 3 All 4.1Low level outputvoltage 4/ 5/VOL VDD = min,
46、IOL = 4.0 mA 1, 2, 3 All 0.4VHigh level input current6/ 7/IIH VDD = max,VIN = VDD = max1, 2, 3 All 10Low level input current6/IIL VDD = max, VIN = O V 1, 2, 3 All 10Low level input current7/IILP VDD = max, VIN = O V 1, 2, 3 All 150Three-state leakagecurrent 8/ 9/ 10/ 11/IOZH VDD = max,VIN = VDD = ma
47、x1, 2, 3 All 10Three-state leakagecurrent 8/ 13/IOZL VDD = max, VIN = O V 1, 2, 3 All 10Three-state leakagecurrent 13/IOZHP VDD = max,VIN = VDD = max1, 2, 3 All 350G50AThree-state leakagecurrent 10/IOZLC VDD = max, VIN = O V 1, 2, 3 All 1.5 mAThree-state leakagecurrent 12/IOZLA VDD = max, VIN = 1.5
48、V 1, 2, 3 All 350 G50AThree-state leakagecurrent 11/IOZLAR VDD = max, VIN = O V 1, 2, 3 All 4.2 mAThree-state leakagecurrent 9/IOZLS VDD = max, VIN = O V 1, 2, 3 All 150 G50ASupply current(internal) 14/IDDIN tCK = 25 ns, VDD = max 1, 2, 3 All 730 15/Supply current (idle)16/IDDIDLE tCK = 25 ns, VDD =
49、 max 1, 2, 3 All 300mAInput capacitance17/ 18/CIN fIN = 1 MHz, TCASE = 25G71C,VIN = 2.5 VSee 4.4.1c4Al 4.7pFFunctional test See 4.4.1b 7, 8 AllSee footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZEA5962-96745STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000
