DLA SMD-5962-98003-1999 MICROCIRCUIT HYBRID DIGITAL QUAD (4 X 32-BIT) MICROCONTROLLER +5 VOLT SUPPLY《微型电路 混合型 数字型 四路(4 X 32位)微控制器 +5伏供电》.pdf

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1、REVISIONS SHEET REV SHEET LTR I DESCRIPTION I DATE (YR-M-DA) I APPROVED 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS OF SHEETS PMIC N/A REV SHEET 12 3 4 5 6 7 8 9 1011121314 STANDARD MICROCIRCUIT DRAWING THIS DRAWI

2、NG IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A PREPAREDBY Gary Zahn DRAWING APPROVAL DATE 99-1 2-01 5962-98003 SIZE CAGE CODE REVISION LEVEL A 67268 CHECKED BY Michael C. Jones APPROVED BY Ray Monnin DEFENSE SUPPLY CENTER COLUMBUS P. O. BOX 3990 COLUMBU

3、S, OHIO 43216-5000 MICROCIRCUIT, HYBRID, DIGITAL, QUAD, (4 X 32-BIT) MICROCONTROLLER, +5 VOLT SUPPLY 1 OF 59 I SHEET DSCC FORM 2233 APR 97 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited 5962-E494-99 Licensed by Information Handling Services1. SCOPE 1 .I Scope. This

4、drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest reliability) and a choice of case outlines and lead finishes are available and are reflected in the Part or Iden

5、tifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 m. The PIN shall be as shown in the following example: 5962 , 98003 p 7 7 7 Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1)

6、(see 1.2.2) designator (see 1.2.4) (see 1.2.5) 1 (see 1.2.3) V Drawing number STAN DARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 1.2.1 Radiation hardness assurance IRHA) desisnator. Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified

7、RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. A 5962-98003 REVISION LEVEL SHEET 2 1.2.2 Device tvpels). The device type(s) shall identify the circuit function as follows: Device type Generic number Circuit function o1 11 AD1 41 60BB1QML-4

8、Quad digital signal processor, +5 V supply, 40 MHz, sixteen 40 megabytek link ports (4 from each processor), eight 40 megabitls serial ports (2 from each procesor). Quad digital signal processor, +5 V supply, 40 MHz, sixteen 40 megabytek link ports (4 from each processor), eight 40 megabitk serial p

9、orts (2 from each procesor). 02 AD1 41 60TB1QML-4 1.2.3 Device class desisnator. This device class designator shall be a single letter identifying the product assurance level as follows: Device class Device performance documentation D, E, G, H, or K Certification and qualification to MIL-PRF-38534 1

10、.2.4 Case outlinels). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desicrnator Terminals Packacre style X See figure 1 1284 21 Ceramic ball grid array 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maxi

11、mum ratincrs. 31 Supply voltage (V D) -0.3 V dc to +7.0 V dc input voltage (vIN). . -0.5 V dc to VDD + 0.5 V dc Output voltage swing (VOU$ Junction temperature under bias (TJ) Solder reflow temperature 31 -0.3 V dc to VDD + 0.5 V dc +130“C +240 “ C -65C to +150“C Loadcapacitance 200 pF Junction to c

12、ase temperature (8JC) 0.36 “ C/W Storage temperature range . - 11 Inactive for new design. Not available from a QML-38534 manufacturer. - 21 The total number of solder balls is 1284, but only 452 require electrical attachment. - 31 Stresses above the absolute maximum rating may cause permanent damag

13、e to the device. Extended operation at the maximum levels may degrade performance and affect reliability. - 41 See recommended solder reflow profile in figure 2. DSCC FORM 2234 APR 97 Licensed by Information Handling Services1.4 Recommended operatinq conditions. Supply voltage (VDD) . +4.75 V dc to

14、+5.25 V dc Case operating temperature range (TC): Devicetype01 . -40C to +IOO“C Devicetype02 . -55C to +125“C 2. APPLICABLE DOCUMENTS STAN DARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 2.1 Government specification. standards. and handbooks. The following specific

15、ation, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicit

16、ation. A 5962-98003 REVISION LEVEL SHEET 3 SPECIFICATION DEPARTMENTOFDEFENSE MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. STANDARDS DEPARTMENTOFDEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Interface Standard For

17、Microcircuit Case Outlines. HANDBOOKS DEPARTMENTOFDEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs). MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Or

18、der Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191 11 -5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws an

19、d regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 may include the performance of all tests here

20、in or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. Therefore, the tests and inspections herein may not be performed for the applicable device class (see MIL-PRF-38534). Futhermore, the manufacturers may take exceptions or us

21、e alternate methods to the tests and inspections herein and not perform them. However, the performance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. 3.2 Desian. construction. and phvsical dimensions. The design, construction, and physical dimensions shall be

22、as specified in MIL-PRF-38534 and herein. DSCC FORM 2234 APR 97 Licensed by Information Handling Services3.2.1 Case outlinefs). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1 3.2.2 Assembly recommendations for maximum reliabilitv. The assembly recommendations for maximum r

23、eliability shall be as specified on figure 2. 3.2.3 Lid deflection. The lid deflection shall be as specified on figure 3. 3.2.4 Terminal connections. The terminal connections shall be as specified on figure 4. 3.2.5 Block diaaramfsl. The block diagram(s) shall be as specified on figure 5. 3.2.6 Timi

24、na waveformfs). The timing waveform(s) shall be as specified on figure 6. STAN DARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 3.3 Electrical Derformance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified

25、 in table I and shall apply over the full specified operating temperature range. A 5962-98003 REVISION LEVEL SHEET 4 3.4 Electrical test reauirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Mar

26、kina of devicefsl. Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked as listed in MIL-HDBK- 103 and QML-38534. 3.6 m. In addition to the general performanc

27、e requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of all parameter

28、s manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (DSCC-VA) upon request. 3.7 Certificate of comDliance. A certificate of compliance shall be required

29、 from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DSCC-VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certificate of conformance. A certificate of conformance as requ

30、ired in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. 4. QUALITY ASSURANCE PROVISIONS 4.1 SamDlina and inwection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as modified in the device manufacturers Quality Management (QM

31、) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screeninq. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. T

32、he test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to either DSCC-VA or the acquiring activity upon request. Also, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance wi

33、th the intent specified in test method 1015 of MIL-STD-883. (2) TC as specified in accordance with table I of method 1015 of MIL-STD-883. DSCC FORM 2234 APR 97 Licensed by Information Handling Servicesb. Interim test parameters shall be as specified in table II herein, except interim electrical para

34、meter tests prior to burn-in are optional at the discretion of the manufacturer. STAN DARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 (1) Static supply current (IDDq). Checks that current draw is not grossly excessive. Current exceeding 1.3 amperes on the module in

35、dicates failure. Normal measured current is about 0.5 amperes. A 5962-98003 REVISION LEVEL SHEET 5 (2) In tercon nects. Checks for electrical continuity through the package leads and wirebonds, along with continuity of internal wiring within the module. (3) Single processor functional. A collection

36、of test routines perform a rudimentary check of the basic functionally of each individual processor. The following individual processor units are tested: DAGs 1 and 2, timer, program sequencer, PX register, multiplier, data register file, shifter, ALU, link ports, serial ports, DMA, IOP registers, a

37、nd memory. (a) Serial port test. This routine uses internal loopback to test basic operation of serial port O and serial port 1, by transmitting and receiving 16-bit words. In addition, the COMPare operation of the ALU and BitSET operation of the shifter are tested. Serial ports are tested at a cloc

38、k rate of 1 O MHz. (b) Computation routine. The routine tests basic operation of the ALU through ADD, SUBTRACT, and COMPare functions. In addition, the multiplier and DAGs are tested usings floating point multiply and load/write functions, while the shifter is tested with a BitSET function. All oper

39、ations use 32-bit words. (c) Link routine. Using 32-bit data and internal memory to memory receive, basic operation of Link buffers O - 5 is tested. In addition, the ALU, COMPare, and shifter BitSET functions are tested. (d) PX routine. This routine tests basic operation of the PX register and short

40、 word addressing. The PX register is loaded with a 48-bit word, then the PX is read into memory. Short word addressing is used to read back, in 16-bit word segments, the 48-bit word from memory. In addition, the ALU, COMPare, and shifter BitSET functions are tested. (e) Timer routine. This routine w

41、ill count down the timer until tcount = O, at which time an interrupt will occur, followed by a return to the code. This test will verify operation of the program sequencer, timer, ALU, COMPare function, and shifter BitSET function. (4) Multiprocessor functional. (a) Interprocessor links: all tested

42、 using 2 times the clock rate (80 MHz) (b) Multiprocessor memory space: each processor accesses and checks memory of the other three processors. c. Final electrical test parameters shall be as specified in table II herein. DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesTABLE I. Elect

43、rical Performance characteristics. High level input voltage 31 I I Symbol VIH2 Device I Limits voltaae High level output voltage u bg roups a Reauiren 9, 10, 11 STAN DARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 levice Limits Unit nts SIZE A 5962-98003 REVISION L

44、EVEL SHEET 13 o1 ,o2 o1 02 o1 ,o2 20+3DT/4 I I 14+3DT/4 13+DT/2 I 6 + DT/2 11 2 + 3DT/4 I 7.5 - DT/8 -2 - DT/8 I I 8 - DTI8 -2 - DT/8 I 8.5 - DT/8 -2 - DT/8 I 5 - DT/8 Licensed by Information Handling ServicesTABLE I. Electrical performance characteristics - Continued. unless otherwise specified Min

45、 Max REDY (O/mor (A/U 381 ItDRDYCS See figure 6. ai 211 1 9, IO, I I low from CS and HBR low I REDY (O/D) disable Or 38/ REDY IA/D) hiah from HBG tTRDYHG _ - RD high delay after REDY IO/D) disable - RD high delay after REDY IA/D) disable tDRDHRDy tDRDHRDy 9, 10, 11 disable from low REDY (O/D)X(A/D)

46、lOW delav after RD low nts - Continued. o1 ,o2 I I I tDRDyRDL I 1,” I I pulse width for read Data disable after% high o1 ,o2 tHDARWH 9, 10, 11 - cs lOW hold after WR high o1 ,o2 tHCSWRH I I Il SIZE STAN DARD A MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS REVISION LEVEL COLUMBUS, OHIO 43216-50

47、00 0.5 1 I 5962-98003 SHEET 14 0.5 1 11 I 45+DT I I I 2 I 9.5 61 I - Licensed by Information Handling ServicesTABLE I. Electrical performance characteristics - Continued. Min I I I Max delav after WR/CS low REDY (O/D) Or (A/D) IOW pulse width for write tRDYpWR SBTS setup before CLKIN tSTSCK See figu

48、re 6. a/ 211 -1.5 - DT/8 Addresdselect enable after CLKIN tMIENA CLKIN - intinued. 9, 10, 11 2.5 I o1 ,o2 I 7l 6 I I - RD/WR high width I I 6 I I I I I 11 I l l5 I D.5+7DT/16 8+7DT/16 I REDY (O/D) or (A/D) disable ItSRDyCK to CLKIN I I I Reauiri o1 ,o2 -1.5 - DT/8 Address selecVdisable after I tMITR

49、A I CLKIN I I 1 - DT/4 1.15-DT/4 o1 02 See footnotes at end of table. I 5962-98003 I STAN DARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 I SHEETIS REVISION LEVEL DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesTABLE I. Electrical performance characteristics - Continued. ACK disable after CLKIN g/ I I Limits tACKTR I I Conditions 11 unless otherwise specified I Symbol I Test Three State Timina - (Bus Master. Bus Slave. HBR. SBTS) Timina a Strobes disable after 401 ItMITRS I See figure 6. a/ =i CLKIN ADRCLK disable after g

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