DLA SMD-5962-98611 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR TTL LINE DRIVERS MONOLITHIC SILICON《微型电路 数字型 双极TTL 线型驱动器 单块硅》.pdf

上传人:eastlab115 文档编号:701311 上传时间:2019-01-01 格式:PDF 页数:11 大小:76.51KB
下载 相关 举报
DLA SMD-5962-98611 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR TTL LINE DRIVERS MONOLITHIC SILICON《微型电路 数字型 双极TTL 线型驱动器 单块硅》.pdf_第1页
第1页 / 共11页
DLA SMD-5962-98611 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR TTL LINE DRIVERS MONOLITHIC SILICON《微型电路 数字型 双极TTL 线型驱动器 单块硅》.pdf_第2页
第2页 / 共11页
DLA SMD-5962-98611 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR TTL LINE DRIVERS MONOLITHIC SILICON《微型电路 数字型 双极TTL 线型驱动器 单块硅》.pdf_第3页
第3页 / 共11页
DLA SMD-5962-98611 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR TTL LINE DRIVERS MONOLITHIC SILICON《微型电路 数字型 双极TTL 线型驱动器 单块硅》.pdf_第4页
第4页 / 共11页
DLA SMD-5962-98611 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR TTL LINE DRIVERS MONOLITHIC SILICON《微型电路 数字型 双极TTL 线型驱动器 单块硅》.pdf_第5页
第5页 / 共11页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirements. Editorial changes throughout. - gap 07-03-05 Robert M. Heber REV SHET REV SHET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY Lee Surowiec DEFENSE SUPPLY CENTER

2、 COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Lee Surowiec COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, DIGITAL, BIPOLAR, TTL, LINE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 9

3、8-05-15 DRIVERS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-98611 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E069-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98611 DEFENSE S

4、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and l

5、ead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 98611 01 Q C X Federal stock class designator RHA design

6、ator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designato

7、r. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circui

8、t function 01 54128 Line drivers 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class l

9、evel B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T1

10、4 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networki

11、ng permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC) 2/ . 7.0 V dc Input voltage . 5.5 V dc Case op

12、erating temperature range (TC) . -55C to +125C Maximum power dissipation (PD) . 314 mW Thermal resistance, junction to case (JC) See MIL-STD 1835 Junction temperature (TJ) . 175C Storage temperature range . -65C to +150C 1.4 Recommended operating conditions. Supply voltage range (VCC) 4.5 V dc to 5.

13、5 V dc Minimum high level input voltage (VIH) 2.0 V dc Maximum low level input voltage (VIL) 0.8 V dc Maximum high level output current (IOH) -29 mA Maximum low level output current (IOL) 48 mA Case operating temperature range (TC) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification

14、, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 -

15、 Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawing

16、s. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence.

17、In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximu

18、m rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Voltage values are with respect to network ground terminal. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,

19、-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as

20、 specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for no

21、n-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Cas

22、e outlines. The case outlines(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2. 3.2.4 Voltage waveforms and load circuit. The voltage waveforms

23、 and load circuit shall be as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over th

24、e full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In additio

25、n, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Markin

26、g for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The c

27、ompliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 h

28、erein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing

29、 shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q

30、and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acq

31、uired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documen

32、tation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 1 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or network

33、ing permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C VCCGroup A subgroup

34、s Limits Unit unless otherwise specified Min Max Input clamp voltage VIKII= -12 mA 4.5 V1, 2, 3-1.5 VV High level output voltage VOHVIL= 0.8 V, IOH= -2.4 mA 4.5 V1, 2, 32.4V VIL= 0.4 V, IOH= -13.2 mA 2.4IL= 0.4 V, IOH= -29 mA 2Low level output voltage VOLVIH= 2 V, IOL= 48 mA 4.5 V1, 2, 30.4VInput cu

35、rrent IIVI= 5.5 V5.5 V1, 2, 31mAInput current, high IIHVI= 2.4 V5.5 V1, 2, 340AInput current, low IILVI= 0.4 V5.5 V1, 2, 3-1.6mAShort circuit output current IOS1/5.5 V1, 2, 3-70-180mAHigh level supply current ICCH5.5 V1, 2, 321mALow level supply current ICCL5.5 V1, 2, 357mAFunctional tests See 4.4.1

36、b7, 8A, 8BPropagation delay time input A or B to output Y tPLHRL= 133 , CL= 50 pF TA= 25C 5.0 V 99ns tPHL 12tPLH RL= 133 , CL= 150 pF TA= 25C 15tPHL 181/ Not more than one output should be shorted at a time. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

37、S-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 Case outline C, D 2 Terminal number Terminal symbol 1 1Y NC 2 1A 1Y 3 1B 1A 4 2Y 1B 5 2A NC 6 2B 2Y 7 GND NC 8 3A 2A 9 3B 2B 10 3Y GND 11 4A N

38、C 12 4B 3A 13 4Y 3B 14 VCC3Y 15 NC 16 4A 17 NC 18 4B 19 4Y 20 VCCFIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990

39、REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 NOTES: 1. Performs Boolean function Y = B +A or Y = A B for each gate. 2. Output designed to drive 75 lines. FIGURE 2. Logic diagram. NOTES: 1. CLincludes probe and jig capacitance. See Table I. 2. All diodes are 1N916 or 1N3064. 3. Input pulse generato

40、r characteristics: PRR 1 MHz, tr 7 ns, tf 7 ns, ZOUT= 50 . FIGURE 3. Voltage waveforms and load circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 432

41、18-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in th

42、e QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conduc

43、ted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-

44、in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, b

45、iases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, t

46、est condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in acc

47、ordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final el

48、ectrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection

展开阅读全文
相关资源
猜你喜欢
  • ASTM E491-1973(2015) 0149 Standard Practice for Solar Simulation for Thermal Balance Testing of Spacecraft《航天器热平衡试验用太阳模拟的标准实施规程》.pdf ASTM E491-1973(2015) 0149 Standard Practice for Solar Simulation for Thermal Balance Testing of Spacecraft《航天器热平衡试验用太阳模拟的标准实施规程》.pdf
  • ASTM E492-2004 Standard Test Method for Laboratory Measurement of Impact Sound Transmission Through Floor-Ceiling Assemblies Using the Tapping Machine《利用夯击机进行冲击声通过地板和天花板组件的实验室测量标准试.pdf ASTM E492-2004 Standard Test Method for Laboratory Measurement of Impact Sound Transmission Through Floor-Ceiling Assemblies Using the Tapping Machine《利用夯击机进行冲击声通过地板和天花板组件的实验室测量标准试.pdf
  • ASTM E492-2009 781 Standard Test Method for Laboratory Measurement of Impact Sound Transmission Through Floor-Ceiling Assemblies Using the Tapping Machine《使用夯击机进行冲击声通过地板和天花板组件的实验室测.pdf ASTM E492-2009 781 Standard Test Method for Laboratory Measurement of Impact Sound Transmission Through Floor-Ceiling Assemblies Using the Tapping Machine《使用夯击机进行冲击声通过地板和天花板组件的实验室测.pdf
  • ASTM E492-2009(2016)e1 0256 Standard Test Method for Laboratory Measurement of Impact Sound Transmission Through Floor-Ceiling Assemblies Using the Tapping Machine《通过采用攻牙机的地板和天花板组件.pdf ASTM E492-2009(2016)e1 0256 Standard Test Method for Laboratory Measurement of Impact Sound Transmission Through Floor-Ceiling Assemblies Using the Tapping Machine《通过采用攻牙机的地板和天花板组件.pdf
  • ASTM E493 E493M-2011 1250 Standard Practice for Leaks Using the Mass Spectrometer Leak Detector in the Inside-Out Testing Mode《在里外试验法中用质谱仪检漏器作泄漏检验的标准操作规程》.pdf ASTM E493 E493M-2011 1250 Standard Practice for Leaks Using the Mass Spectrometer Leak Detector in the Inside-Out Testing Mode《在里外试验法中用质谱仪检漏器作泄漏检验的标准操作规程》.pdf
  • ASTM E493 E493M-2011(2017) 5625 Standard Practice for Leaks Using the Mass Spectrometer Leak Detector in the Inside-Out Testing Mode《由内向外检测模式下用质谱检漏仪检测泄漏的标准实施规程》.pdf ASTM E493 E493M-2011(2017) 5625 Standard Practice for Leaks Using the Mass Spectrometer Leak Detector in the Inside-Out Testing Mode《由内向外检测模式下用质谱检漏仪检测泄漏的标准实施规程》.pdf
  • ASTM E493-2006 Standard Test Methods for Leaks Using the Mass Spectrometer Leak Detector in the Inside-Out Testing Mode《在双面试验模式中用质谱仪检漏器做泄漏检验的标准试验方法》.pdf ASTM E493-2006 Standard Test Methods for Leaks Using the Mass Spectrometer Leak Detector in the Inside-Out Testing Mode《在双面试验模式中用质谱仪检漏器做泄漏检验的标准试验方法》.pdf
  • ASTM E494-2005 Standard Practice for Measuring Ultrasonic Velocity in Materials《测量材料中超声波传播速度的标准实施规程》.pdf ASTM E494-2005 Standard Practice for Measuring Ultrasonic Velocity in Materials《测量材料中超声波传播速度的标准实施规程》.pdf
  • ASTM E494-2010 6875 Standard Practice for Measuring Ultrasonic Velocity in Materials《测量超声波在材料中的传播速度的标准操作规程》.pdf ASTM E494-2010 6875 Standard Practice for Measuring Ultrasonic Velocity in Materials《测量超声波在材料中的传播速度的标准操作规程》.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1