1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards PublicationMechanical standardization of semiconductor devicesPart 6-19: Measurement methods of the package warpage at elevated temperature and the maximum permissible warpageBS EN 60191-6-
2、19:2010National forewordThis British Standard is the UK implementation of EN 60191-6-19:2010. It isidentical to IEC 60191-6-19:2010.The UK participation in its preparation was entrusted to Technical CommitteeEPL/47, Semiconductors.A list of organizations represented on this committee can be obtained
3、 onrequest to its secretary.This publication does not purport to include all the necessary provisions of acontract. Users are responsible for its correct application. BSI 2010ISBN 978 0 580 60758 5ICS 31.080.01Compliance with a British Standard cannot confer immunity fromlegal obligations.This Briti
4、sh Standard was published under the authority of the StandardsPolicy and Strategy Committee on 30 June 2010.Amendments issued since publicationAmd. No. Date Text affectedBRITISH STANDARDBS EN 60191-6-19:2010EUROPEAN STANDARD EN 60191-6-19 NORME EUROPENNE EUROPISCHE NORM May 2010 CENELEC European Com
5、mittee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Management Centre: Avenue Marnix 17, B - 1000 Brussels 2010 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC me
6、mbers. Ref. No. EN 60191-6-19:2010 E ICS 31.080.01 English version Mechanical standardization of semiconductor devices - Part 6-19: Measurement methods of the package warpage at elevated temperature and the maximum permissible warpage (IEC 60191-6-19:2010) Normalisation mcanique des dispositifs semi
7、conducteurs - Partie 6-19: Mthodes de mesure du gauchissement des botiers temprature leve et du gauchissement maximum admissible(CEI 60191-6-19:2010) Mechanische Normung von Halbleiterbauelementen Teil 6-19: Messverfahren fr die Gehuse-Verbiegung bei erhhter Temperatur und die maximal zulssige Verbi
8、egung (IEC 60191-6-19:2010) This European Standard was approved by CENELEC on 2010-05-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-dat
9、e lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under
10、the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finlan
11、d, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom. BS EN 60191-6-19:2010EN 60191-6-19:2010 - 2 - Foreword The text of document 4
12、7D/757/FDIS, future edition 1 of IEC 60191-6-19, prepared by SC 47D, Mechanical standardization for semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 60191-6-19 on 2010-05-01. Attention is drawn to the possibi
13、lity that some of the elements of this document may be the subject of patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent rights. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an i
14、dentical national standard or by endorsement (dop) 2011-02-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2013-05-01 Annex ZA has been added by CENELEC. _ Endorsement notice The text of the International Standard IEC 60191-6-19:2010 was approved by
15、CENELEC as a European Standard without any modification. _ BS EN 60191-6-19:2010- 3 - EN 60191-6-19:2010 Annex ZA (normative) Normative references to international publications with their corresponding European publications The following referenced documents are indispensable for the application of
16、this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD appl
17、ies. Publication Year Title EN/HD Year IEC 60191-6-2 - Mechanical standardization of semiconductor devices - Part 6-2: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for 1,50 mm, 1,27 mm and 1,00 mm pitch ball and column terminal
18、 packages EN 60191-6-2 - IEC 60191-6-5 - Mechanical standardization of semiconductor devices - Part 6-5: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for fine-pitch ball grid array (FBGA) EN 60191-6-5 - IEC 60749-20 - Semicondu
19、ctor devices - Mechanical and climatic test methods - Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat EN 60749-20 - BS EN 60191-6-19:2010 2 60191-6-19 IEC:2010 CONTENTS 1 Scope.5 2 Normative references .5 3 Terms and definitions .5 4 Sample.9 4.
20、1 Sample size 9 4.2 Solder ball removal .9 4.3 Pretreatment conditions.9 4.4 Maximum time after pretreatment until measurement.9 4.5 Repetition of the reflow cycles for the sample9 5 Measurement .9 5.1 General description .9 5.2 Temperature profile and the temperatures for measurements 9 5.3 Measure
21、ment method10 5.3.1 Shadow moir method .10 5.3.2 Laser reflection method .10 5.3.3 Data analysis (Data table, Diagonal scan graph, 3D plot graph).11 6 Maximum permissible package warpage at elevated temperature .11 7 Recommended datasheet for the package warpage11 7.1 Measurement temperatures for da
22、ta sheet 11 7.2 Datasheet11 7.3 Example of datasheets 12 Figure 1 Measuring area of BGA and FBGA in full grid layout 6 Figure 2 Measuring area of BGA and FBGA perimeter layout with 4 rows and 4 columns 6 Figure 3 Measuring area of FLGA perimeter layout with 4 rows and 4 columns 7 Figure 4 Calculatio
23、n of the sign of package warpage .8 Figure 5 Package warpage 8 Figure 6 Thermocouple placement .10 Figure 7 Temperature dependency of the package warpage 12 Figure 8 Recommended datasheet.13 Table 1 Maximum permissible package warpages for BGA and FBGA11 Table 2 Maximum permissible package warpages
24、for FLGA.11 BS EN 60191-6-19:201060191-6-19 IEC:2010 5 MECHANICAL STANDARDIZATION OF SEMICONDUCTOR DEVICES Part 6-19: Measurement methods of the package warpage at elevated temperature and the maximum permissible warpage 1 Scope This part of IEC 60191 specifies measurement methods of the package war
25、page at elevated temperature and the maximum permissible warpages for Ball Grid Array(BGA), Fine-pitch Ball Grid Array (FBGA), and Fine-pitch Land Grid Array (FLGA). 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references
26、, only the edition cited applies. For undated references, the latest edition of the referenced document applies. IEC 60191-6-2, Mechanical standardization of semiconductor devices Part 6-2: General rules for the preparation of outline drawings of surface mounted semiconductor device packages Design
27、guide for 1,50 mm, 1,27 mm and 1,00 mm pitch ball and column terminal packages IEC 60191-6-5, Mechanical standardization of semiconductor devices Part 6-5: General rules for the preparation of outline drawings of surface mounted semiconductor device packages Design guide for fine-pitch ball grid arr
28、ay (FBGA)1IEC 60749-20, Semiconductor devices Mechanical and climatic test methods Part 20: Resistance of plastic-encapsulated SMDs to the combined effect of moisture and soldering heat 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 measurin
29、g area area for measurement of package warpage, composed of either terminal-existing area bordered by the lines connecting the centres of the outermost neighbouring solder balls for the packages with the standoff height more than 0,1 mm, including BGA and FBGA NOTE Examples of measurement area is sh
30、own in Figure 1 and Figure 2. If there are balls at the package centre, their area is also considered as a part of measuring areas. substrate surface except certain edge margin for the packages with the standoff height of 0,1 mm or less, including FLGA NOTE Examples of measurement area is shown in F
31、igure 3. The width of this margin L depends on the capability of each measuring instrument (L = 0,2 mm recommended). 1hereinafter referred as “FBGA design guide“. BS EN 60191-6-19:2010 6 60191-6-19 IEC:2010 (ME 1) e ee (MD 1) e MDA B C 123MEIEC 108/10 NOTE 1) The hatched area indicates the measuring
32、 area. 2) Symbols in this figure are specified to FBGA design guide (IEC 60191-6-5). Figure 1 Measuring area of BGA and FBGA in full grid layout (ME 1) e eMDA B C 1 2 3 ME(ME 7) e e (MD 7) e (MD 1) e IEC 109/10 NOTE Symbols in this figure are specified to FBGA design guide (IEC 60191-6-5). Figure 2
33、Measuring area of BGA and FBGA perimeter layout with 4 rows and 4 columns BS EN 60191-6-19:201060191-6-19 IEC:2010 7 LIEC 110/10 NOTE The edge margin L indicates the exempt area from measurement to avoid measurement noise depending on the instrument capability. Recommended edge margin L = 0,2 mm. Fi
34、gure 3 Measuring area of FLGA perimeter layout with 4 rows and 4 columns 3.2 convex warpage arched top surface (not interconnect side) of package being mounted on PWB, wherein the sign of the convex warpage is defined as plus 3.3 concave warpage inward-curving top surface (not interconnect side) of
35、package being mounted on PWB, wherein the sign of the concave warpage is defined as minus 3.4 package warpage sign plus or minus sign of package warpage determined by the sign of the sum of the largest positive displacement and the largest negative displacement of the package profile on both measure
36、ment area diagonals, which are regarded as base lines connecting the outermost opposite corners of the measuring area, thus resulting to be the sign of (ABMAX+ABMIN+CDMAX+CDMIN) where ABMAXis the largest positive displacement; ABMINis the largest negative displacement of the package profile on the d
37、iagonal AB; CDMAXis the largest positive displacement; and CDMINis the largest negative displacement of the package profile on the diagonal CD. NOTE In Figure 4, the signs of ABMAX, ABMIN, CDMAX andCDMIN are plus, zero, plus and minus, respectively. The concave or convex impression of the package wa
38、rpage can differ from the above defined sign, in critical case. BS EN 60191-6-19:2010 8 60191-6-19 IEC:2010 ABMAXABMIN= 0 Base line Package A CDMINPackage warpage profile Measuring area Depopulated area Measuring area DC B Measuringarea Measuring area Measuring area CDMAXIEC 111/10 Figure 4 Calculat
39、ion of the sign of package warpage 3.5 package warpage difference of the largest positive and the largest negative displacements of the package warpage in the measuring area with respect to the reference plane, preceded by package warpage sign, where reference plane is derived using the least square
40、 method with the measuring area data NOTE For example, the absolute value of the package warpage C is obtained by the sum of the absolute value of the largest positive displacement A and that of the largest negative displacement B. This is in respect to the reference plane which is derived by using
41、the least square method, as shown in Figure 5. Package warpage sign precedes C. Reference plane B AConcave Convex Measuring area Referenceplane BAMeasuring area C= A + B IEC 113/10 IEC 112/10 Figure 5 Package warpage BS EN 60191-6-19:201060191-6-19 IEC:2010 9 4 Sample 4.1 Sample size At least three
42、samples are required for each measurement condition. 4.2 Solder ball removal If the measurement method of the package warpage requires the elimination of the solder balls from a package, it is recommended to use mechanical removal rather than hot reflow. If the samples are prepared without solder ba
43、lls for the convenience of the measurement, the package shall be subjected to the thermal history of the solder ball attachment process. 4.3 Pretreatment conditions The bake and moisture soak conditions shall conform to the moisture sensitivity level specified in IEC 60749-20. The peak temperature o
44、f the package warpage measurement shall meet the specification of the product. 4.4 Maximum time after pretreatment until measurement It is recommended to measure the warpage no longer than 5 h after the pretreatment. 4.5 Repetition of the reflow cycles for the sample The same sample shall not be sub
45、jected to the repetition of the reflow cycles. The sample can only be subjected to more than one cycle of reflow for remeasurement, if reproducibility of test data was evaluated prior to the test. 5 Measurement 5.1 General description The package warpage is measured by “shadow moir method” or “laser
46、 reflection method”. Samples are subjected to heating and cooling while measuring the package warpage at the temperatures specified in 5.2. The measurement points shall not be on the crown of solder balls but on the substrate surface of the package. Only when the behaviour of the top surface of the
47、package (mostly marking surface) is verified to coincide with that of the substrate surface, the measurement on the top surface is allowed. 5.2 Temperature profile and the temperatures for measurements 5.2.1 The temperature profile for the warpage measurement does not necessarily simulate that for p
48、roduction. Higher priorities are placed on maintaining the temperature constant during the measurement, never exposing the samples more than necessary duration at high temperature. Samples shall be proceeded to the next measurement as soon as possible, avoiding a temperature surge to prevent the ove
49、rshoot, and minimizing the temperature difference between the top and bottom surfaces. 5.2.2 The temperatures for measurements are room temperature, melting point, peak temperature, BS EN 60191-6-19:2010 10 60191-6-19 IEC:2010 solidification point, and room temperature after cool down. The melting point and the solidification point are 220 C for Sn-3,0Ag-0,5Cu solder as a referen
