FORD ESB-M4D436-A3-2010 POLYETHERIMIDE (PEI) 30% GLASS FIBER REINFORCED INJECTION MOLDING COMPOUND TO BE USED WITH FORD WSS-M99P1111-A 《30%玻璃纤维增强的聚醚酰亚胺(PEI)注塑成型料 与标准FORD WSS-M99.pdf

上传人:visitstep340 文档编号:745546 上传时间:2019-01-14 格式:PDF 页数:5 大小:36.98KB
下载 相关 举报
FORD ESB-M4D436-A3-2010 POLYETHERIMIDE (PEI) 30% GLASS FIBER REINFORCED INJECTION MOLDING COMPOUND  TO BE USED WITH FORD WSS-M99P1111-A  《30%玻璃纤维增强的聚醚酰亚胺(PEI)注塑成型料  与标准FORD WSS-M99.pdf_第1页
第1页 / 共5页
FORD ESB-M4D436-A3-2010 POLYETHERIMIDE (PEI) 30% GLASS FIBER REINFORCED INJECTION MOLDING COMPOUND  TO BE USED WITH FORD WSS-M99P1111-A  《30%玻璃纤维增强的聚醚酰亚胺(PEI)注塑成型料  与标准FORD WSS-M99.pdf_第2页
第2页 / 共5页
FORD ESB-M4D436-A3-2010 POLYETHERIMIDE (PEI) 30% GLASS FIBER REINFORCED INJECTION MOLDING COMPOUND  TO BE USED WITH FORD WSS-M99P1111-A  《30%玻璃纤维增强的聚醚酰亚胺(PEI)注塑成型料  与标准FORD WSS-M99.pdf_第3页
第3页 / 共5页
FORD ESB-M4D436-A3-2010 POLYETHERIMIDE (PEI) 30% GLASS FIBER REINFORCED INJECTION MOLDING COMPOUND  TO BE USED WITH FORD WSS-M99P1111-A  《30%玻璃纤维增强的聚醚酰亚胺(PEI)注塑成型料  与标准FORD WSS-M99.pdf_第4页
第4页 / 共5页
FORD ESB-M4D436-A3-2010 POLYETHERIMIDE (PEI) 30% GLASS FIBER REINFORCED INJECTION MOLDING COMPOUND  TO BE USED WITH FORD WSS-M99P1111-A  《30%玻璃纤维增强的聚醚酰亚胺(PEI)注塑成型料  与标准FORD WSS-M99.pdf_第5页
第5页 / 共5页
亲,该文档总共5页,全部预览完了,如果喜欢就下载吧!
资源描述

1、 ENGINEERING MATERIAL SPECIFICATION Material Name Specification Number Date Action Changes 2010 01 07 N-STATUS No replacement named J. Crist, NA Released WP 3948-a Page 1 of 5 POLYETHERIMIDE (PEI), 30% GLASS FIBER ESB-M4D436-A3 REINFORCED INJECTION MOLDING COMPOUND NOT TO BE USED FOR NEW DESIGN 1. S

2、COPE The material defined by this specification is a glass fiber reinforced amorphous thermoplastic polyetherimide (PEI) resin. 2. APPLICATION This specification was released originally for material used for functional applications where good dimensional stability and exceptional strength at very hi

3、gh temperatures is required, such as headlamp bulb sockets. 3. REQUIREMENTS 3.1 STATISTICAL PROCESS Suppliers must conform to the requirements of Ford Quality System Standard Q-101. A mutually acceptable Control Plan as described therein is required for material/source approval. Appropriate statisti

4、cal tools must be used to analyze process/product data so that variation in the final product is continuously reduced. 3.2 INFRARED SPECTROPHOTOMETRY AND/OR THERMAL ANALYSIS Ford Motor Company, at its option, may conduct infrared and/or thermal analysis of material/parts supplied to this specificati

5、on. The IR spectra and thermograms established for initial approval shall constitute the reference standard and shall be kept on file at the designated material laboratory. All samples shall produce IR spectra and thermograms that correspond to the reference standard when tested under the same condi

6、tions. 3.3 CONDITIONING AND TEST CONDITIONS All test values indicated herein are based on material conditioned in a controlled atmosphere of 23 +/- 2 C and 50 +/- 5 % relative humidity for not less than 24 h prior to testing and tested under the same conditions unless otherwise specified. 3.4 MOLDIN

7、G COMPOUND 3.4.1 Melt Flow Rate 5.0-10.0 g/10 min (ISO 1133/ASTM D 1238 343 C, 6.6 kg) ENGINEERING MATERIAL SPECIFICATION ESB-M4D436-A3 WP 3948-b Page 2 of 5 3.5 MOLDED TEST SPECIMEN 3.5.1 Preparation of Test Specimens All test specimens shall be injection molded in accordance with ASTM D 1897. The

8、values of this specification are based on injection molded specimens unless otherwise specified. No annealing allowed. 3.5.2 Density 1.49 - 1.53 g/cm3 (ISO R 1183/ASTM D 792) 3.5.3 Tensile Strength at Yield, min 150 MPa (ISO R 527/ASTM D 638, Type 1 specimen, 3.2 mm thick, 5 mm/min test speed) 3.5.4

9、 Flexural Modulus, min 7.0 GPa (ASTM D 790, Method I, Procedure A, 130 x 12.7 x 6.4 mm specimen) 3.5.5 Shear Modulus at 23 C 1.8 - 2.2 GPa (ASTM D 4065, forced constant amplitude, fixed frequency of 1 Hz +/- 15%, strain level below 1%. Specimen approx. 60 x 12.7 x 3.2 +/- 0.2 mm cut from the center

10、of the tensile specimen) Additionally, a Shear Modulus vs. Temperature curve shall be plotted for -50 to +200 C temperature range, at 5 C minimum intervals. The plotted curve must be within tolerance range shown on page 5. 3.5.6 Impact Strength, Izod, J/m, min (ISO 180, Method 4A/ASTM D 256, Method

11、A, 63.5 x 12.7 x 3.2 mm, 10 specimens minimum for each test) Notched Unnotched 3.5.6.1 At 23 +/- 2 C 50 260 3.5.6.2 At -40 +/- 2 C TBD TBD The test specimens must be conditioned for a minimum of 6 h at the above specified temperature prior to impact test. Low temperature testing shall be done within

12、 the cold box, if not possible, test can be conducted outside, but within 5 s. 3.5.7 Heat Deflection Temperature, min 207 C (ISO 75/ASTM D 648, 127 x 12.7 x 6.4 mm specimen at 1.82 MPa) 3.5.8 Heat Aging Performance (1000 h at 180 +/- 2 C) 3.5.8.1 Tensile Strength Change +/- 10 % ENGINEERING MATERIAL

13、 SPECIFICATION ESB-M4D436-A3 WP 3948-b Page 3 of 5 (Test Method per para 3.5.3) 3.5.8.2 Elongation Change +/- 10 % (Test Method per para 3.5.3) 3.5.8.3 Impact Strength, Izod Change +/- 10 % (Test Method per para 3.5.6) 3.6 FLAMMABILITY Burn Rate, max 100 mm/min (FLTM BN 24-2, without the lot samplin

14、g plan) The specimen size required for material approval is 355 x 100 x 3.2 +/- 0.2 mm with a smooth surface. 3.7 ADDITIONAL REQUIREMENTS Specific requirements for material and/or manufactured parts shall be specified on the Engineering drawing, Engineering parts specification and/or performance spe

15、cifications. All critical areas with respect to these properties shall be clearly designated on the Engineering drawing. 3.8 SUPPLIERS RESPONSIBILITY All materials supplied to this specification must be equivalent in all characteristics to the material upon which approval was originally granted. Pri

16、or to making any change in the properties, composition, construction, color, processing or labeling of the material originally approved under this specification, whether or not such changes affect the materials ability to meet the specification requirements, the Supplier shall notify Purchasing, Tox

17、icology and the affected Materials Engineering activity of the proposed changes and obtain the written approval of the Materials Engineering activity. Test data, test samples and a new code identification are to be submitted with the request. Substance restrictions imposed by law, regulations or For

18、d, apply to the materials addressed by this document. The restrictions are defined in Engineering Material Specification WSS-M99P9999-A1, unless a different suffix (e.g., A2 or A3) is specified on the engineering document for the application. ENGINEERING MATERIAL SPECIFICATION ESB-M4D436-A3 WP 3948-

19、b Page 4 of 5 4. APPROVAL OF MATERIALS Materials defined by this specification must have prior approval by the responsible Materials Engineering activity. Suppliers desiring approval of their materials shall first obtain an expression of interest from the affected Purchasing, Design and Materials En

20、gineering activity. Upon request, the Supplier shall submit to the affected Materials Engineering activity its own laboratory report to the specification (test results, not nominal values), the material designation and code number, and test specimens for Ford evaluation. Upon approval, the material

21、will be added to the Engineering Material Approved Source List. 5. GENERAL INFORMATION The information given below is provided for assistance and clarification and does not represent requirement(s) to this specification. 5.1 COEFFICIENT OF LINEAR THERMAL EXPANSION 2.0E-5/ C (ASTM D 696) 5.2 MOLD SHRINKAGE (ISO 2577, injection molded specimen) 5.2.1 Molding Shrinkage . After 48 h storage at RT 0.2 % 5.3 WATER ABSORPTION, max 0.2 % (ISO 62/ASTM D 570) ENGINEERING MATERIAL SPECIFICATION ESB-M4D436-A3 WP 3948-b Page 5 of 5 SHEAR MODULUS VS. TEMPERATURE PLOT TBD

展开阅读全文
相关资源
猜你喜欢
  • DLA SMD-5962-95738 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS DUAL J-K FLIP FLOP WITH SET AND RESET TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体.pdf DLA SMD-5962-95738 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS DUAL J-K FLIP FLOP WITH SET AND RESET TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体.pdf
  • DLA SMD-5962-95739 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS QUAD 2-INPUT NAND SCHMITT TRIGGER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体四重2输.pdf DLA SMD-5962-95739 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS QUAD 2-INPUT NAND SCHMITT TRIGGER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体四重2输.pdf
  • DLA SMD-5962-95741 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 10-TO-4 LINE PRIORITY ENCODER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体 10到4行优先.pdf DLA SMD-5962-95741 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 10-TO-4 LINE PRIORITY ENCODER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体 10到4行优先.pdf
  • DLA SMD-5962-95742 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS BCD DECADE SYNCHRONOUS COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体 二进制编码的.pdf DLA SMD-5962-95742 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS BCD DECADE SYNCHRONOUS COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体 二进制编码的.pdf
  • DLA SMD-5962-95743 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS SYNCHRONOUS PRESETTABLE 4-BIT BINARY COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金.pdf DLA SMD-5962-95743 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS SYNCHRONOUS PRESETTABLE 4-BIT BINARY COUNTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金.pdf
  • DLA SMD-5962-95744 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS NON-INVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITH.pdf DLA SMD-5962-95744 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS NON-INVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITH.pdf
  • DLA SMD-5962-95745 REV D-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS NON-INVERTING OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC .pdf DLA SMD-5962-95745 REV D-2004 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS NON-INVERTING OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC .pdf
  • DLA SMD-5962-95746 REV C-2009 MICROCIRCUIT DIGITAL HIGH SPEED CMOS RADIATION HARDENED 8-BIT UNIVERSAL SHIFT REGISTER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILIC.pdf DLA SMD-5962-95746 REV C-2009 MICROCIRCUIT DIGITAL HIGH SPEED CMOS RADIATION HARDENED 8-BIT UNIVERSAL SHIFT REGISTER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILIC.pdf
  • DLA SMD-5962-95747 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐.pdf DLA SMD-5962-95747 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1