1、EIA/JEDEC STANDARD Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation EIA/JESD57 DECEMBER 1996 (Reaffirmed: SEPTEMBER 2003)ELECTRONIC INDUSTRIES ASSOCIATION ENGINEERING DEPARTMENT NOTICE EIA/JEDEC Standards and Publications contain materia
2、l that has been prepared, progressively reviewed, and approved through the JEDEC Counallevel and subsequently reviewed and approved by the EIA General Counsel. EIA/JEDEC Standards and Publications are designed to serve the public interest through eliminating misunderstandings between manufacturers a
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6、/JEDEC Standards and Publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. Within the EWJEDEC organization there are procedures whereby an EIA/JEDEC Standard or Publication may be further processed and uHima
7、tely becomes an ANSUEIA Standard. Inquiries, comments, and suggestions relative to the content of this EIA/JEDEC Standard or Publication should be addressed to the JEDEC Executive Secretary at EIA Headquarters, 2500 Wilson Boulevard, Arlington, VA 22201. Published by ELECTRONIC INDUSTRIES ASSOCIATIO
8、N 1996 Engineering Department 2500 Wilson Boulevard Arlington, VA 22201 “Copyright“ does not apply to JEDEC member companies as they are free to duplicate this document in accordance with the latest revision of the JEOEC Publication 21 “Manual of Organization and Procedure“. PRICE: Please refer to t
9、he current catalog of EIA, JEDEC, and TIA STANDARDS and ENGINEERING PUBLICATIONS or call Global Engineering Documents, USA and canada (1-800-854-7179) International (303-397 -7956) Printed in U.S.A. All rights reserved EIA/JEDEC Standard No. 57 TEST PROCEDURES FOR THE :MEASUREMENT OF SINGLE-EVENT EF
10、FECTS IN SEMICONDUCTOR DEVICES FROM HEAVY ION IRRADIATION Contents Page 1 Scope and purpose . 1.1 Guideline 1 1.2 Test facility 1 1.3 3(tsic eff addbnessed : . ! 1. 4 Iimits of the test method 1 1. 5 Goal of SEE testing 2 1.6 Warnings 2 1. 7 Interferences 2 2 Terminology 2 2.1 critical charge 2 2. 2
11、 Cross-section 2 2.3DUT 3 2.4 Effective LET . 3 2.5 Fluence 3 2.6Flux . 3 2. 7 Single-event (SE:Ei) hard error 4 2. 8 Unear energy transfer (I.El) 4 2. 9 Saturated or limiting cross-section . 4 2.10 Sensitive volume 4 2 .11 Single-event burnout (SEB) . 4 2.12 Single-event effects (SEE) . 4 2.13 Sing
12、le-event functional interrupt (SEFI) 5 2.14 Single-event gate rupture (SEGR) 5 2 .15 Single-event latchup (SEL) 5 2.16 Single-event upset (SEU) 5 2.17 Threshold I.ET . 5 3 Procedures 6 3.1 Test plan . : . 6 3.1.1 Guideline 6 3.1.2 Test plan preparation 6 3 .1.2.1 I.EI range 6 3.1.2.2 characteristics
13、 6 3.1.2.3 Operating conditions 6 i EIA/JEDEC Standard No. 57 Contents (continued) 3 .1.2.4 Experimental set-up . 7 3.1.2.5 SEE detection 7 3.1.2.6 Dosimetry . 7 3.1.2. 7 Flux range 7 3 .1. 2. 8 Particle fluence levels . 7 3.1.2.9 Accumulating ionizing dose . 8 3.2 Pre-test preparation 8 3.2.1 Devic
14、e preparation . 8 3.2.2 1rr cllec(-out . 8 3. 2. 3 I.atchup testing capability . 8 3.2.4 Beam selection . 9 3. 3 Beam dosimetry system . 9 3.3.1 Overview 9 3.3.2 Beam e11e 3IUi . 9 3.3.2.1 Ene measurement overview 9 3.3.2.2 Surface bani.er detector . 10 3.3.2.3 How the surface barrier detector works
15、 10 3.3.2.4 Degradation of the surface barrier detector 10 3.3.2.5 LE1 Measurements using a surface barrier detector . 11 3.3.3 Beam flux and fluence 11 3.3.3.1 Scintillation detector 11 3.3.3.2 Umit on the detection rate . 11 3.3.3.3 Beam profiling to determine spatial uniformity . 12 3.41restin: p
16、rocedure 12 3.4.1 General procedure . 12 3.4.1.1 How much cross-section data should be taken 12 3.4.1.2 DlJI llandling . 13 3.4.1.3 Sample selecti.on . 13 3.4.1.4 Standard operating procedure 13 3.4.1.5 Beam setup . 14 3.4.2 Setup procedure 14 3.4.2.1 1rest equipment location 14 3.4.2.2 1rest fixtur
17、e mounting . 14 3.4.2.3 Setup clleck . 14 3.4.2.4 Control part clleck . 14 3.4.2.5 DlJI positioning in beam path 14 3.4.2.6 Ioad DlJT 15 3.4.2. 7 Prepare chamber . 15 3.4.2.8 Position DlJI in beam path 15 3.4.2.9 Measure flux and set range 15 ii EIA/JEDEC Standard No. 57 Contents (continued) 3.4.2.1
18、0 Measure beam energy . 15 3.4.2.11 Measure lEI . 15 3.4.2.12 Measure beam uniformity 16 3 .4. 2.13 Select the ion flux for SEE testing 16 3.4.3 Operating procedure- data collection . 16 3.4.3.1 Setup 16 3.4.3.2 DUT check out electrical . 16 3.4.3.3 Initiate testing 16 3. 4. 3. 4 Run conditions chec
19、k . 16 3.4.3.5 Test performance . 16 3.4.3.61f the DUT does upset 17 3.4.3. 71f the DUT does not upset . 17 4 Single-event gate rupture test 18 4.1 Scope 18 4.2 Referenced documents . 18 4.3 Terminology 18 4.4 Summary of SEGR test method 18 4. 5 Significance and use . 19 4. 6 Interferences . 19 4. 7
20、 .Apparatus . 19 4. 8 Sampling . 20 4. 9 SEGR test plan . 20 4.10 Preparation of apparatus . 20 4.11 SEGR test procedure . 21 4.12 Test report . 22 S Final report . 22 5 .1 Test data sheet 22 5.2 Test report . 23 References . 24 iii EIA/JEDEC Standard No. 57 Contents (continued) Annexes 25 A :Equipm
21、ent . 25 A.l Radiation sources and test apparatus . 25 A.l.l System characteristics 25 A.l.2 Available ions/energies . 25 A.l. 3 Ion source 25 A.l. 4 Cyclotron accelerator . 25 A.l.5 Tandem Van de Graaff accelerator . 26 A.2 Test instrumentation . 26 A.2.1 DUT test system . 26 A.2.1.1 Test modes 26
22、A.2.1.2 Basic requirements 27 A.2.1.3 Basic capabilities 27 A. 2.1. 4 Additional capabilities . 27 B INTER.FEREN“CES 29 B.l Intetferences 29 B .1.1 Introduction 29 B.1.2 Ion beam flux 29 B.l.2.1 Beam calibration 29 B.l.2.2 Number of errors per unit time . 29 B.2 Ionizing dose damage . . 29 B.2.1 Ion
23、izing dose history 29 B.2.2 Worst case ionizing dose 29 B. 3 Generalized noise 30 B.4 Effective lET 30 B.5 Over1ayer 30 B. 6 Polyimide . 30 B.7 Package shadowing 30 B.8 utchup 31 iv EIA/JEDEC Standard No. 57 Contents (concluded) C fEST FIGlJRES 32 *C.l Schematic overview of SEU test . 32 *C.2 JPL va
24、cuum chamber . 33 *C.3 Typical DUT board (front face) 34 *C.4 Beam measurement system 35 *C.5 Energy measurement system 36 C.6 Sample cross section 37 C. 7 SEGR test flow diagram 38 C.8 Power MOSFEI test 39 *Figures l-5 are copyright-American Society for Testing and Materials (ASTM). Reprinted with
25、penmsston. v ElA/JEDEC Standard No. 57 vi EIA/JEDEC Standard No. 57 Page 1 TEST PROCEDURES FOR THE MEASUREMENT OF SINGLE-EVENT EFFECTS IN SEMICONDUCTOR DEVICES FROM HEAVY ION IRRADIATION (From Council Ballot JCB-96-05 formulated under the cognizance of JC-13.4 Committee on Radiation Hardness: Assura
26、nce and Characterization.) 1 Scope and purpose 1.1 Guideline This test method defines the requirements and procedures for Earth-based single-event effects (SEE) testing of integrated circuits. 1.2 Test facility This test method is valid only when using a Van de Graaff or cyclotron accelerator. A tes
27、t method for a Cf-252 source or a relativistic heavy ion source (e.g. 10 MeV/amu) is not included. This test method also assumes that the accelerator test facilities have the ability to mount and position the device under test (DUT) in a vacuum chamber, provide heavy ion dosimetry; measure total ion
28、izing dose and that the testing organization has the equipment for performing these tests. Testing may be done at facilities that do not require lid removal. These facilities use ions of high enough energy so that mounting and positioning can be done in air and without the vacuum limitation. The eff
29、ect of the short air path to the device must be checked to ensure the measurement is not compromised. 1.3 Basic effects addressed SEE includes any manifestation of soft or hard errors induced by a single ion strike. This would include single-event upset (SEU), multiple bit upset, transients that may
30、 introduce a soft error in nearby circuits, single-event gate rupture (SEGR), latchup (SEL), burnout (SEB), and single-event functional interrupt (SEFI). 1.4 Limits of the test method This test method does not apply to SEE testing that uses neutrons, protons and other lighter particles. EIA/JEDEC St
31、andard No. 57 Page2 1.5 Goal of SEE testing For SEU and SEL, the end product of the test is a plot of the SEE cross-section vs. effective LET (linear energy transfer). This plot should extend from the threshold LET (onset of upset or latch-up) to the maximum cross-section that can be obtained. This
32、data can be combined with the predicted heavy ion environment of the intended space application in order to predict an expected SEE rate for the DUT. For SEB and SEGR the end product is to establish safe operation limits. 1.6 Warnings These tests may involve haLndous materials, operations and equipm
33、ent. Test hardware and parts may become radioactive. This test method does not address all of the safety problems associated with this type of testing. It is the responsibility of the user of this test method in consultation with accelerators personnel to establish the appropriate safety and health
34、practices and to determine the applicability of regulatory limitations prior to use. 1. 7 Interferences Annex B of this document should be reviewed before initiating SEE Testing. 2 Terminology 2.1 Critical charge (Qc) The minimum amount of charge collected at a sensitive node due to an ion or charge
35、 particle strike that results in SEE. 2.2 Cross-section The number of events per unit fluence. NOTE -If one can assume that the depth of the sensitive volume is small compared to its lateral dimensions the SEE cross section ( cr ) can be calculated as follows: number of events a=-fluence x cos( EIA/
36、JEDEC Standard No. 57 Page3 where e =angle of the beam with respect to the perpendicular of the chips surface. The recommended cross-section units are cm2tdevice or um2tbit. The satuxated (or asymptotic) cross-section will have an area equal to the sum of all the sensitive areas of the device, provi
37、ded that one heavy ion induces one upset per strike on a sensitive region. If any ion causes multiple upsets the cross-section may be higher than the sum of the areas of the geometric structures. If the thin region assumption is violated, the cosine dependence assumption is no longer valid. Many mod
38、ern devices violate the above stated conditions, and the experimenter must determine the applicability of the above equation to the experiment. A modification of the above equation may be necessary if the assumed conditions are violated. 2.3DUT Device Under Test. 2.4 Effective LET (also see LET, 2.8
39、) LET modified to account for the change in path length of an ion through a sensitive volume when the angle of incidence of the ion is not normal to the surface. NOTE - Frequently, the cosine dependence is utilized for this correction. Caution must be utilized; see annex B. Many modem devices do not
40、 follow the above equation and the experimenter may have to determine the LET (8) from the geometry of this particular device. 2.5 Fluence The ion flux integrated over the time required for the run, expressed as ions/ cm2. 2.6 Flux The number of ions passing through a one cm2 area, perpendicular to
41、the beam, per unit time (ionstcm2 s). ElA/JEDEC Standard No. 57 Page4 2. 7 Single-event (SEH) hard error An unalterable change of operation that is typically associated with permanent damage to one or more of the device elements (e.g., gate oxide). 2.8 Linear energy transfer (LET) The amount of ener
42、gy lost, per unit length, as the ion travels through a material. NOTE-The most common LET unit is MeV/(mg/cm2).An ion with a LEI of 98 MeV/(mg/cm2)duces 1 pC of charge for each micrometer traveled in silicon. The beam deposition must be uniform through the deposition region of interest, i.e., d.Fldx
43、. is constant where E is the energy of the ion. 2.9 Saturated or limiting cross-section The maximum observable cross-section. NOTE - On many softer devices, the saturated cross-section appears as the asymptotic upper section of the LET vs cross-section curve. An additional increase in LET will not i
44、ncrease the cross-section of the device. On harder devices, the cross-section may not reach saturation. 2.10 Sensitive volume A region, or multiple regions, of a device from which deposited charge can be collected, in such a manner as to produce SEE. 2.11 Single-event burnout (SEB) A single-ion-indu
45、ced condition that results in the destruction of the device due to the activation of a localized high current state that results in catastrophic failure. 2.12 Single-event effects (SEE) The measurable effect in semiconductor devices due to single-event phenomena and includes SEU, multiple bit SEU, S
46、EB, SEL, SEH and SEGR and SEFI (Single-Event Functional Interrupt). 2.13 Single-event functional interrupt (SEFI) EIA/JEDEC Standard No. 57 PageS The loss of functionality of the device that does not require cycling of the devices power to restore operability unlike SEL and does not result in perman
47、ent damage as in SEB. NOTE - SEFI is typically caused by a device being cycled to a nongenerational test mode due to a heavy ion strike. 2.14 Single-event gate rupture (SEGR) A single-ion induced condition in a MOSFET that results in a breakdown and subsequent conducting path through the gate oxide.
48、 NOTE - It is manifested by an increase in gate leakage current and can result in either the degradation or complete failure of an IC. Typically only applicable to MOSFEI devices which operate using (V de 5 V) voltages such as power DMOS or EPROMs. 2.15 Single-event latchup (SEL) A loss of device fu
49、nctionality due to a single-event. NOTE - It may be manifested by a high current density state that may cause permanent damage to the device. If permanent damage is not sustained, power cycling of the device (off and back on) is necessary to restore normal operations. SEL is the result of a parasitic SCR structure in an IC becoming energized by an ion strike. 2.16 Single-event upset (SEU) A single latched logic state from one to ze
