1、JEDEC STANDARD Transient Voltage Suppressor Standard for Thyristor Surge Protective Device Rating Verification and Characteristic Testing JESD66 NOVEMBER 1999 (Reaffirmed: NOVEMBER 2006) ELECTRONIC INDUSTRIES ALLIANCE JEDEC Solid State Technology Association NOTICE This JEDEC standard is considered
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8、dard or publication should be addressed to JEDEC Solid State Technology Association, 2500 Wilson Boulevard, Arlington, VA 22201-3834, (703)907-7560/7559 or www.jedec.org Published by JEDEC Solid State Technology Association 2006 2500 Wilson Boulevard Arlington, VA 22201-3834 This document may be dow
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11、-3834 or call (703) 907-7559 JEDEC Standard No. 66- i-TRANSIENT VOLTAGE SUPPRESSOR STANDARD FOR THYRISTOR SURGEPROTECTIVE DEVICE RATING VERIFICATION AND CHARACTERISTIC TESTINGCONTENTSPageForeword v1 Introduction 12 Scope 13 Device definition 13.1 Thyristor surge protective device (TSPD) 13.1.1 Off s
12、tate of a TSPD 13.1.2 Breakdown region of a TSPD 23.1.3 On state of a TSPD 23.2 Classes of thyristor surge protective devices 33.2.1 Forward-conducting diode TSPD 33.2.2 Forward-conducting triode TSPD 43.2.3 Reverse-blocking diode TSPD 43.2.4 Reverse-blocking triode TSPD 53.2.5 Bidirectional TSPD 53
13、.2.6 Unidirectional TSPD 53.2.7 Negative-breakdown-resistance TSPD 53.2.8 Positive-breakdown-resistance TSPD 63.3 Definitions of characteristics, rating, and parameter 63.3.1 Characteristic 63.3.2 Rating 63.3.3 Parameter 73.4 Thyristor surge protective device parameters 73.4.1 Electrical parameters
14、applicable to all device types 83.4.2 Thermal parameters applicable to all device types 103.4.3 Additional electrical parameters for positive-breakdown-resistance types 123.4.4 Additional parameters for negative-breakdown-resistance types 133.4.5 Additional parameters for reverse-blocking types 153.
15、4.6 Additional parameters for forward-conducting types 153.4.7 Additional parameters for triode, gate accessible device types 163.4.8 Common telecommunications impulse waveform definitions 184 Rating verification tests 194.1 Maximum repetitive off-state voltage (V DR M ) 194.1.1 Introduction (V DRM
16、) 194.1.2 Test method (V DRM ) 194.2 Nonrepetitive on-state surge current (I TSM ) 21JEDEC Standard No. 66-ii-TRANSIENT VOLTAGE SUPPRESSOR STANDARD FOR THYRISTOR SURGEPROTECTIVE DEVICE RATING VERIFICATION AND CHARACTERISTIC TESTINGCONTENTS (continued)page4.2.1 Introduction (I TSM ) 214.2.2 Test meth
17、od for I TSM 224.3 Nonrepetitive peak impulse current (I PPS ) 234.3.1 Introduction (I PPS ) 234.3.2 Test method for I PPS testing 235 Characteristic tests 265.1 Off-state current (I D ) testing 265.1.1 I D test method 265.1.2 Reverse gate current test, adjacent terminal open (triodes), I GAO , I GK
18、O 275.1.3 Reverse gate current test, adjacent terminal shorted (triodes), I GAS , I GKS 285.1.4 On-state reverse gate current test (triodes), I GAT , I GKT 295.1.5 Forward-conducting state reverse gate current test, (triodes), I GAF , I GKF 305.1.6 Peak off-state gate current test for triode devices
19、 (I GDM ) 315.2 Breakover voltage V (BO) testing 325.2.1 AC V (BO) test method (all device types) 325.2.2 Impulse V (BO) test method (all device types) 355.3 Breakover current (I (BO) ) testing 375.3.1 AC I (BO) test method (positive resistance types) 375.3.2 Impulse I (BO) test method (all device t
20、ypes) 395.4 Gate switching current (I GSM ) and charge (Q GS ) testing 405.4.1 Gate switching current (I GSM ) test method, triode types 405.4.2 Gate switching current (Q GS ) test method, triode types 425.5 Holding current (I H ) testing 435.5.1 I H test circuit (impulse method) 455.5.2 I H test ci
21、rcuit (ramp method) 465.6 On-state voltage (V T ) testing 475.6.1 Pulsed dc on-state voltage (V T ) test method 485.6.2 Impulse on-state voltage (V T ) test method 495.6.3 AC on-state voltage (V T ) test method 505.7 Off-state capacitance (C O ) testing 525.7.1 Two terminal TSPD capacitance (C O ) t
22、est method 535.7.2 DC voltage-biased multi-terminal TSPD capacitance (C O ) test method 555.8 Critical rate of rise of off-state voltage ( dv/ dt) test 565.8.1 Description ( dv/ dt) 565.8.2 Test method ( dv/ dt) 595.9 Critical rate of rise of on-state current ( di/ dt) 605.9.1 Description ( di/ dt)
23、605.9.2 Test method ( di/ dt) 615.10 Peak forward recovery voltage (V FRM ) test 63JEDEC Standard No. 66-iii-TRANSIENT VOLTAGE SUPPRESSOR STANDARD FOR THYRISTOR SURGEPROTECTIVE DEVICE RATING VERIFICATION AND CHARACTERISTIC TESTINGCONTENTS (continued)page5.10.1 Description (V FRM ) 635.10.2 Test meth
24、od (V FRM ) 65Figures1 Symbols and terms for a forward-conducting positive-breakdown-resistance TSPD 22 Symbols and terms for a forward-conducting negative-breakdown-resistance TSPD 33 Symbols and terms for a gated TSPD 44 Symbols and terms for a reverse-blocking negative-breakdown-resistance TSPD 5
25、5 Symbols and terms for a reverse-blocking positive-breakdown-resistance TSPD 66 Bidirectional negative-breakdown-resistance TSPD 77 Symbols and terms for a bidirectional positive-breakdown-resistance TSPD 88 Maximum repetitive off-state voltage (V DRM ) test circuit 109 Example of current wave, I T
26、SM test 1210 Nonrepetitive peak on-state surge current (I TSM ) test 1311 Definition of double exponential impulse current waveform 1412 Definition of double exponential impulse voltage waveform 1413 Measurement of impulse V (BO) , I (BO) , and I PPS : Example of a pulse forming network 1614 Off-sta
27、te current test circuit 1815 P-gate reverse current, cathode terminal open test circuit 2516 N-gate reverse current, anode terminal open test circuit 2817 P-gate reverse current, cathode terminal shorted test circuit 2918 N-gate reverse current, cathode terminal shorted test circuit 3019 P-gate reve
28、rse current, on-state test circuit 3120 N-gate reverse current, on-state test circuit 3221 P-gate reverse current, forward-conducting state test circuit 3422 N-gate reverse current, forward-conducting state test circuit 3923 P-gate-to-cathode terminal peak off-state voltage test, peak off-state p-ga
29、te current test circuit 4224 N-gate-to-anode terminal peak off-state voltage test, peak off-state n-gate current test circuit 4425 AC V (BO) test circuit 4626 Impulse V (BO) , I (BO) test waveform 4827 P-gate switching Q, I, and gate-to-cathode breakover voltage test circuit 4928 N-gate switching Q,
30、 I, and gate-to-anode breakover voltage test 5029 Impulse method test circuit for I H verification 5130 Test circuit for ramp down method of I H measurement 5231 I H versus turn-off load line 5432 Pulsed on-state voltage test 5433 Impulse on-state voltage measurement 5634 Single power source on-stat
31、e voltage test 5735 AC on-state voltage measurement 5736 Capacitance measurement circuit 5837 Capacitance measurement with external dc voltage bias 58JEDEC Standard No. 66-iv-TRANSIENT VOLTAGE SUPPRESSOR STANDARD FOR THYRISTOR SURGEPROTECTIVE DEVICE RATING VERIFICATION AND CHARACTERISTIC TESTINGCONT
32、ENTS (continued)pageFigures ( continued )38 Multi-terminal device capacitance measurement circuit 5939 dv/ dt test voltage waveform (exponential waveform) 6240 dv/ dt test voltage waveform (linear waveform) 6341 Simplified exponential dv/ dt test circuit 6442 Simplified linear dv/ dt test circuit 64
33、43 di/ dt test circuit 6644 Surge generator for di/ dt test 6645 di/ dt test waveforms 6746 Peak forward recovery voltage (V FRM ) waveforms 67Tables1 Electrical parameters applicable to TSPDs 92 TSPD thermal parameters 113 Electrical parameters for positive-breakdown-resistance TSPDs 124 Electrical
34、 parameters for negative-breakdown-resistance TSPDs 135 Reverse-blocking TSPD parameters 156 Parameters for forward-conducting TSPDs 157 Additional parameters for gated TSPDs 178 Common impulse waveshape definitions 18JEDEC Standard No. 66-v-ForewordThis standard was prepared by JEDEC JC-22.5 Commit
35、tee on Transient Voltage Suppressors. Theintended users of this standard are those interested in Thyristor Surge Protective Device characterizationand rating verification. These devices are used primarily by the telecommunications industry to protectcircuits from harmful overvoltages.Major contribut
36、ions to the content of this standard come from recent work by the ANSI/IEEE inPC62.37, 1996 Standard Test Specification For Thyristor Diode Surge-Protective Devices, and from theJC-10 Committee in-process work on revisions to Standard No. 77, Terms, Definitions, and LetterSymbols for Discrete Semico
37、nductor and Optoelectronic Devices, Section 7 - Transient VoltageSuppressors; Surge Protective Devices. Similar standards are presently being developed by the IEC.This standard conforms with the work of other groups. However, work on this standard, and the othersin-process has not progressed to the
38、point where an exact and complete comparison of documents can bemade.JEDEC Standard No. 66Page 1TRANSIENT VOLTAGE SUPPRESSOR STANDARD FOR THYRISTOR SURGEPROTECTIVE DEVICE RATING VERIFICATION AND CHARACTERISTIC TESTING(From JEDEC Board Ballot JCB-97-81, formulated under the cognizance of the JC-22.5
39、Committee onTransient Voltage Suppressors.)1 IntroductionThe Thyristor Surge Protective Device (TSPD) is a semiconductor device that is recently findingwidespread application in the telecommunications industry. The intent of this standard is to provideinformation on test methods that will reduce the
40、 possibility of disagreement and misunderstandingbetween TSPD vendors and users, and facilitate the determination of device interchangability. Thispublication is not intended to preclude or discourage other approaches that similarly represent goodengineering practice, or that may be acceptable to, o
41、r have been accepted by, appropriate bodies. Partieswho wish to bring other approaches to the attention of the formulating committee to be considered forinclusion in future revisions of this publication are encouraged to do so. It is the intention of theformulating committee to revise and update thi
42、s publication from time to time as may be occasioned bychanges in technology, industry practice, or government regulations, or for other appropriate reasons.2 ScopeThis standard is applicable to Thyristor Surge Protective Devices. It describes terms and definitions andexplains methods for verifying
43、device ratings and measuring device characteristics.3 Device definitions3.1 Thyristor surge protective device (TSPD)A thyristor, designed for transient voltage suppression in telecommunication, data line, and similarapplications. They limit voltage transients by conducting surge currents. It returns
44、 to a blocking statewhen the current decays below a critical value.NOTE The device is also known as a thyristor surge suppressor (TSS).3.1.1 Off state of a TSPDThe state of a TSPD, in a quadrant in which switching can occur, that corresponds to the high dynamic-resistance portion of the characterist
45、ic between the origin and the beginning of the breakdown region.JEDEC Standard No. 66Page 23.1 Thyristor surge protective device (TSPD) ( contd)3.1.2 Breakdown region of a TSPDThe portion of the characteristic that starts with the transition from the high dynamic resistance off stateto a substantial
46、ly lower dynamic resistance and extends to the switching point.Figure 1 Symbols and terms for a forward-conducting positive-breakdown-resistanceTSPD3.1.3 On state of a TSPDThe condition of the TSPD corresponding to the low-resistance low-voltage portion of the principalvoltage-current characteristic
47、 in the switching quadrant(s).Quadrant IIIQuadrant IForwardConductionCharacteristic-v +v+i-iSwitchingCharacteristicIPPSIFSMIFRMIF VFIDVDVDRMIDRMI(BR)I(BO) ISV(BR)V(BO) VS ITVTIHITRMITSMIPPSJEDEC Standard No. 66Page 33.2 Classes of thyristor surge protective devices3.2.1 Forward-conducting diode TSPD
48、A two-terminal internally triggered TSPD that switches only for negative cathode voltage and conductslarge currents at positive cathode voltages comparable in magnitude to the on-state voltage (see figures 1and 2).NOTES1 In conventional SCR thyristor terminology, where the voltage is applied to the
49、anode, this devicewould be called a reverse-conducting diode thyristor.2 When the TSPD cathode is positive, the device characteristics are similar to those of a forward-biased diode.3 When the TSPD cathode is negative, the device characteristics are similar to those of a breakover-triggeredSCR thyristor.Figure 2 Symbols and terms for a forward-conducting negative-breakdown-resistanceTSPD-v +v+i-iQuadrant IForwardConductionCharacteristicIPPSIFSMIFRMIF VFITVTIHITRMITSMIPPSIDVDVDRMIDRMI(BO)ISV(BO)VSQuadrant IIISwitchingCharacteristicJEDEC Standard No. 66Page 43.2 Classes of thyristor
