KS M ISO 3377-2-2008 Leather-Physical and mechanical tests-Determination of tear load-Part 2:Double edge tear《皮革 物理和机械试验 撕破力的测定 第2部分 双边撕裂》.pdf

上传人:cleanass300 文档编号:819867 上传时间:2019-02-11 格式:PDF 页数:8 大小:310.88KB
下载 相关 举报
KS M ISO 3377-2-2008 Leather-Physical and mechanical tests-Determination of tear load-Part 2:Double edge tear《皮革 物理和机械试验 撕破力的测定 第2部分 双边撕裂》.pdf_第1页
第1页 / 共8页
KS M ISO 3377-2-2008 Leather-Physical and mechanical tests-Determination of tear load-Part 2:Double edge tear《皮革 物理和机械试验 撕破力的测定 第2部分 双边撕裂》.pdf_第2页
第2页 / 共8页
KS M ISO 3377-2-2008 Leather-Physical and mechanical tests-Determination of tear load-Part 2:Double edge tear《皮革 物理和机械试验 撕破力的测定 第2部分 双边撕裂》.pdf_第3页
第3页 / 共8页
KS M ISO 3377-2-2008 Leather-Physical and mechanical tests-Determination of tear load-Part 2:Double edge tear《皮革 物理和机械试验 撕破力的测定 第2部分 双边撕裂》.pdf_第4页
第4页 / 共8页
KS M ISO 3377-2-2008 Leather-Physical and mechanical tests-Determination of tear load-Part 2:Double edge tear《皮革 物理和机械试验 撕破力的测定 第2部分 双边撕裂》.pdf_第5页
第5页 / 共8页
点击查看更多>>
资源描述

1、 KSKSKSKSKSKSKSK KSKSKS KSKSK KSKS KSK KS KS M ISO 3377 2 , 2: KS M ISO 3377 2: 2008 2008 4 15 http:/www.kats.go.krKS M ISO 3377 2: 2008 : () ( ) () () ( ) : (http:/www.standard.go.kr) : :2003 12 3 :2008 4 15 20080180 : : ( 025097278) (http:/www.kats.go.kr). 10 5 , . KS M ISO 3377 2: 2008 , 2: Leath

2、er Physical and mechanical tests Determination of tear load Part 2: Double edge tear 2002 1 ISO 3377 2, Leather Physical and mechanical testsDetermination of tear load Part 2: Double edge tear . 1 . (Baumann) . . 2 . . ( ) . KS B ISO 7500 1, 1: / KS M ISO 2418, KS M ISO 2419, KS M ISO 2589, 3 . . 4

3、4.1 . KS B ISO 7500 1 2 , 2 % KS M ISO 3377 2: 2008 2 100 mm/min20 mm/min . 4.2 1 , 10 mm0.1 mm , 2 mm0.1 mm (strip) , 12 mm0.1 mm . (4.1) . 4.3 KS M ISO 2589 . 4.4 KS M ISO 2419 , 2 . . 1 : mm 2 ( 1 mm, R ) 5 5.1 KS M ISO 2418 . 3 , 3 KS M ISO 2419 6 . 1 (batch) 2 (hides) (skins) , 3 1 . KS M ISO 3

4、377 2: 2008 3 5.2 KS M ISO 2419 . 5.3 KS M ISO 2589 . 6 6.1 . . . 6.2 , . 6.3 6.1 6.2 . 7 . a) b) (mm) c) (N) d) (N) e) ,(c) (d) f) KS M ISO 2419 ( , 20 / 65 % 23 /50 % ) g) h) KS M ISO 2418 , 2: 135513 7017 (02)60094114 (02)600948878 http:/ Korean Agency for Technology and Standards http:/www.kats.go.kr KS M ISO 3377 2: 2008KSKSKS SKSKS KSKS SKS KS SKS KSKS SKSKS KSKSKS Leather Physical and mechanical tests Determination of tear load Part 2: Double edge tear ICS 59.140.30

展开阅读全文
相关资源
猜你喜欢
  • DLA MIL-PRF-19500 547 D-2011 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL SILICON TYPES 2N6660 AND 2N6661 JAN JANTX JANTXV AND JANS.pdf DLA MIL-PRF-19500 547 D-2011 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL SILICON TYPES 2N6660 AND 2N6661 JAN JANTX JANTXV AND JANS.pdf
  • DLA MIL-PRF-19500 548 H-2012 COUPLER OPTO ELECTRONIC SEMICONDUCTOR DEVICE SOLID STATE TYPES 4N47 4N48 4N49 4N47A 4N48A 4N49A 4N47U 4N48U 4N49U 4N47BU 4N48BU AND 4N49BU JAN JANTX JA.pdf DLA MIL-PRF-19500 548 H-2012 COUPLER OPTO ELECTRONIC SEMICONDUCTOR DEVICE SOLID STATE TYPES 4N47 4N48 4N49 4N47A 4N48A 4N49A 4N47U 4N48U 4N49U 4N47BU 4N48BU AND 4N49BU JAN JANTX JA.pdf
  • DLA MIL-PRF-19500 553 E-2011 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY BARRIER FAST RECOVERY TYPE 1N6391 JAN JANTX JANTXV JANS AND JANHC.pdf DLA MIL-PRF-19500 553 E-2011 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY BARRIER FAST RECOVERY TYPE 1N6391 JAN JANTX JANTXV JANS AND JANHC.pdf
  • DLA MIL-PRF-19500 554 E-2009 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY BARRIER FAST RECOVERY TYPE 1N6392 JAN JANTX JANTXV AND JANHC.pdf DLA MIL-PRF-19500 554 E-2009 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY BARRIER FAST RECOVERY TYPE 1N6392 JAN JANTX JANTXV AND JANHC.pdf
  • DLA MIL-PRF-19500 556 K-2010 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL SILICON TYPES 2N6782 2N6782U 2N6784 2N6784U 2N6786 AND 2N6786U JAN JANTX JANTXV JANS JANHC AND J.pdf DLA MIL-PRF-19500 556 K-2010 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL SILICON TYPES 2N6782 2N6782U 2N6784 2N6784U 2N6786 AND 2N6786U JAN JANTX JANTXV JANS JANHC AND J.pdf
  • DLA MIL-PRF-19500 557 K-2012 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL SILICON TYPES 2N6796 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 AND 2N6802U JAN JANTX JANTXV J.pdf DLA MIL-PRF-19500 557 K-2012 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL SILICON TYPES 2N6796 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 AND 2N6802U JAN JANTX JANTXV J.pdf
  • DLA MIL-PRF-19500 558 J-2013 SEMICONDUCTOR DEVICE UNITIZED PNP SILICON SWITCHING FOUR TRANSISTOR ARRAY TYPES 2N6987 2N6987U AND 2N6988 JAN JANTX JANTXV JANS JANSM JANSD JANSP JANSL.pdf DLA MIL-PRF-19500 558 J-2013 SEMICONDUCTOR DEVICE UNITIZED PNP SILICON SWITCHING FOUR TRANSISTOR ARRAY TYPES 2N6987 2N6987U AND 2N6988 JAN JANTX JANTXV JANS JANSM JANSD JANSP JANSL.pdf
  • DLA MIL-PRF-19500 560 K-2010 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON SWITCHING TYPE 2N5339 AND 2N5339U3 JAN JANTX JANTXV JANS JANSM JANSD JANSP JANSL JANSR JANSF JANSG JANSH JAC.pdf DLA MIL-PRF-19500 560 K-2010 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON SWITCHING TYPE 2N5339 AND 2N5339U3 JAN JANTX JANTXV JANS JANSM JANSD JANSP JANSL JANSR JANSF JANSG JANSH JAC.pdf
  • DLA MIL-PRF-19500 564 H-2009 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR P-CHANNEL SILICON TYPES 2N6849 2N6849U 2N6851 AND 2N6851U JAN JANTX JANTXV JANS JANHC AND JANKC.pdf DLA MIL-PRF-19500 564 H-2009 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR P-CHANNEL SILICON TYPES 2N6849 2N6849U 2N6851 AND 2N6851U JAN JANTX JANTXV JANS JANHC AND JANKC.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1