NF C31-888-2-2007 Superconductivity - Part 2 critical current measurement - DC critical current of Nb3Sn composite superconductors 《超导性 第2部分 临界电流测量 Nb3Sn 复合超导体直流(DC)临界电流》.pdf

相关资源

IRS 70778-2-2018 Recommendations for determining the carrying capacity and fatigue risks of existing metallic railway bridges.pdf

IRS 70712-2018 Rail defects.pdf

IRS 50596-6-2018 Conditions for coding intermodal loading units in combined transport combined transport lines and wagons.pdf

IRS 50596-5-2018 Transport of road vehicles on wagons-Technical Organisation-Conveyance of semi-trailers with P coding or N coding on recess wagons.pdf

IESNA TM-23-2017 Lighting Control Protocols.pdf

IESNA RP-2-2017 Recommended Practice for Retail Lighting.pdf

ITU-R RAPPORT M 766-2 FRENCH-1990 Feasibility of frequency sharing between the GPS and other services《全球定位系统和其他服务之间的频率共享的可行性》.pdf

ITU-R RAPPORT M 763-3 FRENCH-1990 Signal level variation due to multipath effects and blockage by ship-s superstructure in maritime mobile-satellite service lin.pdf

ITU-R RAPPORT M 739-1 FRENCH-1986 Interference due to intermodulation products in the land mobile service between 25 and 100 MHz《由于互调产物在陆地移动服务25和100 MHz之间产生的干扰》.pdf

ITU-R RAPPORT M 319-7 FRENCH-1990 Characteristics of equipment and principles governing the assignment of frequency channels between 25 and 100 MHz for land mob.pdf

猜你喜欢

DLA MIL-PRF-19500 739 A-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED QUAD TRANSISTOR N-CHANNEL AND P-CHANNEL SILICON TYPES 2N7518 AND 2N7518U JANTXVR F AND JANSR F.pdf

DLA MIL-PRF-19500 741 A VALID NOTICE 1-2013 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor Die N-Channel and PChannel Silicon.pdf

DLA MIL-PRF-19500 741 A-2009 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE N-CHANNEL AND P-CHANNEL SILICON VARIOUS TYPES.pdf

DLA MIL-PRF-19500 742 A-2009 SEMICONDUCTOR DEVICE DIODE SILICON ULTRAFAST RECOVERY POWER RECTIFIER TYPES 1N5802CB 1N5804CB 1N5806CB 1N5807CB 1N5809CB AND 1N5811CB 1N5802CBUS 1N5804C.pdf

DLA MIL-PRF-19500 743 B-2010 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR N-CHANNEL SILICON TYPES 2N7503U8 AND 2N7503U8C JA.pdf

DLA MIL-PRF-19500 744 D-2013 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL RADIATION HARDENED LOGIC-LEVEL SILICON TYPES 2N7616UB 2N7616UBC 2N7616UBN 2N7616UBCN JANTXVR JAN.pdf

DLA MIL-PRF-19500 745 D-2012 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) LOGIC-LEVEL SILICON TYPES 2N7626UB 2N76 .pdf

DLA MIL-PRF-19500 746 B-2011 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR N-CHANNEL SILICON TYPES 2N7587U3 2N7587U3C 2N75895.pdf

DLA MIL-PRF-19500 748 VALID NOTICE 1-2013 Semiconductor Device Field Effect Transistor P-Channel Silicon Type 2N7505T3 JANTX JANTXV and JANS.pdf