1、 IEC 60749-6 Edition 2.0 2017-03 INTERNATIONAL STANDARD Semiconductor devices Mechanical and climatic test methods Part 6: Storage at high temperature IEC 60749-6:2017-03(en) THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2017 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specifi
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10、ish to give us your feedback on this publication or need further assistance, please contact the Customer Service Centre: csciec.ch. IEC 60749-6 Edition 2.0 2017-03 INTERNATIONAL STANDARD Semiconductor devices Mechanical and climatic test methods Part 6: Storage at high temperature INTERNATIONAL ELEC
11、TROTECHNICAL COMMISSION ICS 31.080.01 ISBN 978-2-8322-4003-8 Registered trademark of the International Electrotechnical Commission Warning! Make sure that you obtained this publication from an authorized distributor. 2 IEC 60749-6:2017 IEC 2017 CONTENTS FOREWORD . 3 1 Scope 5 2 Normative references
12、5 3 Terms and definitions 5 4 Test apparatus 5 5 Procedure 5 5.1 Test conditions . 5 5.2 Measurements 6 5.3 Failure crieria 6 6 Summary . 7 Bibliography 8 Table 1 High temperature storage conditions . 6 IEC 60749-6:2017 IEC 2017 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MEC
13、HANICAL AND CLIMATIC TEST METHODS Part 6: Storage at high temperature FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote interna
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23、 application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 60749-6 has been prepared by I
24、EC technical committee 47: Semiconductor devices. This second edition cancels and replaces the first edition published in 2002. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: a) additional test co
25、nditions; b) clarification of the applicability of test conditions. 4 IEC 60749-6:2017 IEC 2017 The text of this standard is based on the following documents: FDIS Report on voting 47/2347/FDIS 47/2372/RVD Full information on the voting for the approval of this International Standard can be found in
26、 the report on voting indicated in the above table. This document has been drafted in accordance with the ISO/IEC Directives, Part 2. A list of all parts in the IEC 60749 series, published under the general title Semiconductor devices Mechanical and climatic test methods, can be found on the IEC web
27、site. The committee has decided that the contents of this document will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific document. At this date, the document will be reconfirmed, withdrawn, replaced by a revised
28、edition, or amended. A bilingual version of this publication may be issued at a later date. IEC 60749-6:2017 IEC 2017 5 SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 6: Storage at high temperature 1 Scope The purpose of this part of IEC 60749 is to test and determine the effect on
29、all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devic
30、es, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated. Thermall
31、y activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43. 2 Normative references There are no normative references in this document. 3 Terms and definitions No terms and de
32、finitions are listed in this document. ISO and IEC maintain terminological databases for use in standardization at the following addresses: IEC Electropedia: available at http:/www.electropedia.org/ ISO Online browsing platform: available at http:/www.iso.org/obp 4 Test apparatus The controlled temp
33、erature chamber required for this test shall be capable of maintaining the test temperature within the tolerances specified in Table 1. Electrical equipment shall be capable of performing the appropriate measurements for the devices being tested, including writing and verifying the required data ret
34、ention pattern(s) for nonvolatile memories. 5 Procedure 5.1 Test conditions The devices under test (DUT) shall be subject to continuous storage (except when there is a requirement in the applicable procurement document to return the DUTs to room ambient for interim electrical measurements) at one of
35、 the temperatures specified in Table 1. Qualification and reliability monitoring test conditions typically require a test duration of 1 000 C 0 + 24at test temperature B of Table 1. Other test conditions can be used as appropriate. 6 IEC 60749-6:2017 IEC 2017 Caution should be exercised when selecti
36、ng an accelerating test condition since the accelerated temperature may exceed the capabilities of the device and materials, thereby inducing (overstress) failures that would not occur under normal use conditions. As a minimum, the following items should be taken into consideration. 1) the maximum r
37、ated storage temperature T stg , max; 2) the melting point and degradation of metals present, especially solder; 3) the temperature limitations of silicon devices; for example, charge loss in nonvolatile memories; 4) package degradation (e.g. glass transition temperature and thermal stability of any
38、 polymeric materials; 5) moisture rating of the package (see IEC 60749-20). Table 1 High temperature storage conditions Condition Temperature C 0 +10A 125 B 150 C 175 D 200 E 250 F 300 5.2 Measurements Unless otherwise specified, interim and final electrical measurements shall be completed within 16
39、8 h after removal of the devices from the specified test conditions. Intermediate measurements are optional unless otherwise specified. The time window need not be met if verification data for a given technology is provided. If the final readpoint time window is exceeded then the units may be restre
40、ssed for the same amount of time that the window is exceeded. For nonvolatile memories, the data specified data retention pattern shall be written initially, and then subsequently verified without re-writing. The electrical measurements shall consist of parametric and functional tests specified in t
41、he applicable procurement document. NOTE If interim measurements are considered necessary they can be chosen from: 24h 0 +848h 0 +896h 0 +8168h 0 +8500h 0 +125.3 Failure crieria A device will be considered a high temperature storage failure if parametric limits are exceeded, or if functionality cann
42、ot be demonstrated under nominal and worst-case conditions, specified in the relevant procurement document. For nonvolatile memories, the specified data retention pattern shall be verified before and after storage. A margin test may be used to detect data retention degradation. Mechanical damage, su
43、ch as cracking of the package, will be considered a failure. Cosmetic package defects and degradation of lead finish, or solderability are not considered failure criteria. IEC 60749-6:2017 IEC 2017 7 6 Summary The following details shall be specified in the relevant specification: a) electrical meas
44、urements (see 5.2); b) sample size; c) test temperature, if other than specified (see 5.1, Table 1); d) test duration, if other 1 000 h (see 5.1); e) intermediate measurements, if required (see 5.2); f) Nonvolatile memory data retention pattern (for appropriate devices) (see 5.3). 8 IEC 60749-6:2017
45、 IEC 2017 Bibliography IEC 60749-20, Semiconductor devices Mechanical and climatic test methods Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat IEC 60749-43 1 , Semiconductor devices Mechanical and climatic test methods Part 43: Guidelines for IC reliability qualification plans _ _ 1Under preparation. Stage at the time of publication: IEC/CDV 60749-43:2016. INTERNATIONAL ELECTROTECHNICAL COMMISSION 3, rue de Varemb PO Box 131 CH-1211 Geneva 20 Switzerland Tel: + 41 22 919 02 11 Fax: + 41 22 919 03 00 infoiec.ch www.iec.ch
