1、BRITISH STANDARD BS QC 750113:1994 Specification for Harmonized system of quality assessment for electronic components Blank detail specification Reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100ABSQC750113:1994 BSI 03-2000 ISBN 0 580 35507 1 National foreword
2、 This British Standard has been prepared under the direction of the Electronic Components Standards Policy Committee. It is identical with IEC747-6-3:1993 (QC 750113) Semiconductor devices Discrete devices Part 6: Thyristors Section 3: Blank detail specification for reverse blocking triode thyristor
3、s, ambient and case-rated, for currents greater than 100 A, published by the International Electrotechnical Commission (IEC). A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct application. Complianc
4、e with a British Standard does not of itself confer immunity from legal obligations. Summary of pages This document comprises a front cover, an inside front cover, pages i and ii, pages 1 to 10 and a back cover. This standard has been updated (see copyright date) and may have had amendments incorpor
5、ated. This will be indicated in the amendment table on the inside front cover. Cross-references International Standard Corresponding British Standard IEC 68-2-17:1978 BS 2011 Environmental testing Part 2.1Q:1981 Test Q. Sealing (Identical) IEC 191-2:1966 BS 3934 Mechanical standardization of semicon
6、ductor devices Part 2:1992 Schedule of international drawings giving dimensions (Identical) IEC 747-6:1983 BS 6493 Semiconductor devices Section 1.6:1984 Recommendations for thyristors (Identical) IEC 747-10:1991/ QC700000:1981 BS QC 700000:1991 Harmonized system of quality assessment for electronic
7、 components. Semiconductor devices. Generic specification for discrete devices and integrated circuits. (Identical) IEC 747-11:1985/ QC750000:1985 BS QC 750000:1986 Harmonized system of quality assessment for electronic components. Discrete semiconductor devices. Sectional specification (Identical)
8、IEC 749:1984 BS 6493 Semiconductor devices Part 3:1985 Mechanical and climatic test methods (Identical) Amendments issued since publication Amd. No. Date CommentsBSQC750113:1994 BSI 03-2000 i Contents Page National Foreword Inside front cover Introduction 1 1 Mechanical description 2 2 Short descrip
9、tion 2 3 Categories of assessed quality 2 4 Limiting values 2 5 Electrical characteristics 4 6 Marking 5 7 Ordering information 5 8 Test conditions and inspection requirements 5 9 Group D Qualification approval tests 10 10 Additional information 10 Figure 1 Current derating curve for a thyristor 4ii
10、 blankBSQC750113:1994 BSI 03-2000 1 Introduction The IEC Quality Assessment System for Electronic Components is operated in conformance with the statutes of the IEC and under the authority of the IEC. The object of this system is to define quality assessment procedures in such a manner that electron
11、ic components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testing. This blank detail specification is one of a series of blank detail specifications f
12、or semiconductor devices and should be used with the following publications: IEC 747-10/QC 700000, Semiconductor devices Discrete devices and integrated circuit Part 10: Generic specification for discrete devices and integrated circuits. IEC 747-11/QC 750100, Semiconductor devices Discrete devices a
13、nd integrated circuits Part 11: Sectional specification for discrete devices. Required information Numbers shown in square brackets on this and the following pages correspond to the following items of required information, which should be entered in the spaces provided. Identification of the detail
14、specification 1 The name of the National Standards Organization under whose authority the detail specification is issued. 2 The IECQ number of the detail specification. 3 The numbers and issue numbers of the generic and sectional specifications. 4 The national number of the detail specification, dat
15、e of issue and any further information required by the national system. Identification of the component 5 Type of component. 6 Information on typical construction and applications. If a device is designed to satisfy several applications, this should be stated in the detail specification. Characteris
16、tics, limits and inspection requirements for these applications shall be met. If a device is electrostatic sensitive, or contains hazardous material, e.g.beryllium oxide, a caution statement should be added in the detail specification. 7 Outline drawing and/or reference to the relevant standard for
17、outlines. 8 Category of assessed quality. 9 Reference data on the most important properties to permit comparison between component types. Throughout this standard, the texts given in square brackets are intended for guidance to the specification writer and should not be included in the detail specif
18、ication. Throughout this standard, when a characteristic of rating applies, “x” denotes that a value shall be inserted in the detail specification.BSQC750113:1994 2 BSI 03-2000 4 Limiting values (absolute maximum rating system) These values apply over the operating temperature range unless otherwise
19、 specified. Repeat only subclause numbers used, with title. Any additional values should be given at the appropriate place, but without subclause number(s). Curves should preferably be given under clause 10 of this standard. Name (address) of responsible NAI (and possibly of body from which specific
20、ation is available). 1 Number of IECQ detail specification plus issue number and/or date. QC 750113.XXX 2 ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: Generic specification: Publication 747-10/QC 700000 Sectional specification: Publication 747-11/QC 750100 and national references if
21、different. 3 National number of detail specification. This box need not be used if the National number repeats IECQ number. 4 DETAIL SPECIFICATION FOR: Type number(s) of the relevant device(s). Ordering information: see clause 7 of this standard. 5 1 Mechanical description 2 Short description Outlin
22、e references: IEC 191-2. mandatory if available and/or national if them is no IEC outline. 7 Reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A Semiconductor material: Si Encapsulation: cavity or non-cavity. Application(s): see clause 5 of this standard. 6 Ou
23、tline drawing may be transferred to or given with more details in clause 10 of this standard. Caution: Observe precautions for handling ELECTROSTATIC SENSITIVE DEVICES if applicable Terminal identification drawing showing pin assignments including graphical symbols. 3 Categories of assessed quality
24、from 2.6 of the generic specification. 8 Marking: letters and figures, or colour code. The detail specification shall prescribe the information to be marked on the device, if any. See 2.5 of the generic specification and/or clause 6 of this standard. Polarity indication, if a special method is used.
25、 Reference data 9 Information about manufacturers who have components qualified to this detail specification is available in the current Qualified Products List.BSQC750113:1994 BSI 03-2000 3 Subclause Limiting values Symbol Value min. max. 4.1 Ambient or case temperatures T amb /T case 4.2 Storage t
26、emperatures T stg 4.3 Virtual junction temperature, if required T (vj) 4.4 Voltages: Any condition such as time, frequency, temperature, mounting method, etc. shall be stated 4.4.1 Repetitive peak reverse voltage V RRM 4.4.2 Repetitive peak off-state voltage V DRM 4.4.3 Non-repetitive peak reverse v
27、oltage V RSM 4.4.4 Non-repetitive peak off-state voltage V DSM 4.4.5 Crest working reverse voltage V RWM 4.4.6 Crest working off-state voltage V DWM 4.4.7 Direct reverse voltage, where applicable V RD 4.4.8 Direct off-state voltage, where applicable V DD 4.5 Currents: Any condition such as time, fre
28、quency, temperature, mounting method, etc. shall be stated 4.5.1 Mean on-state current at specified T break(see Figure 1) I T(AV) 4.5.2 Repetitive peak on-state current, where applicable I TRM 4.5.3 Direct on-state current, where applicable I TD 4.5.4 Surge on-state current A statement as to whether
29、 or not a reverse voltage is applied should be included I TSM 4.5.5 Critical rate of rise of on-state current (di T /dt) cr 4.5.6 For case-rated devices only, I 2 t value I 2 t Maximum value, sinusoidal waveform, for 10 ms (50 Hz) or 8,3 ms (60 Hz): a) without reapplication of the reverse voltage, i
30、nitial junction temperature T (vj)= 25 C I 2 t 1 b) with reapplication of the reverse voltage, V RWMmax., initial junction temperature T (vj)= 25 C I 2 t 2 4.6 Gate rating: Any condition such as time, frequency, temperature, mounting method, etc. shall be stated 4.6.1 Peak forward gate voltage, wher
31、e appropriate. Anode positive with respect to cathode V FGM1 4.6.1 Peak forward gate voltage, where applicable. Anode negative with respect to cathode V FGM2 4.6.3 Peak reverse gate voltage V RGM 4.6.4 Peak forward gate current I FGM 4.6.5 Peak gate power P GM 4.6.6 Mean gate power P GM(AV) 4.7 Mech
32、anical ratings Mounting torque (if applicable) Mounting force (if applicable) BSQC750113:1994 4 BSI 03-2000 5 Electrical characteristics See clause 8 of this standard for inspection requirements. Repeat only subclause numbers used, with title. Any additional characteristics should be given at the ap
33、propriate place but without subclause number. When several devices are defined in the same detail specification, the relevant values should be given on successive lines, avoiding repeating identical values. Curves should preferably be given under clause 10 of this standard. Figure 1 Current derating
34、 curve for a thyristor Subclause Characteristics and conditions at T ambor T case= 25 C unless otherwise specified (see clause 4of the generic specification) Symbol Value Tested min. max. 5.1 On-state voltage: Maximum value at the peak current corresponding to ; times the rated maximum mean on-state
35、 current I T(AV) V TM A2b 5.2 Reverse current: Maximum value of the repetitive peak reverse current at rated repetitive peak reverse voltage V RRM : 5.2.1 at T amb /T case= 25 C I RRM1 A2b 5.2.2 at T amb /T case(max.) I RRM2 C2b 5.3 Off-state current: Maximum value of the repetitive peak off-state c
36、urrent at rated repetitive peak off-state voltage V DRM : A2b 5.3.1 at T amb /T case= 25 C I DRM1 A2b 5.3.2 at T amb /T case(max.) I DRM2 C2b 5.4 Holding current: Minimum and maximum values I H C2a 5.5 Latching current: Maximum value under specified conditions I L C2a 5.6 Gate trigger current: Maxim
37、um value I GT A3BSQC750113:1994 BSI 03-2000 5 6 Marking Any particular information other than that given in box 7 (clause 1) and/or 2.5 of the generic specification shall be given here. 7 Ordering information The following minimum information is necessary to order a specific device, unless otherwise
38、 specified: precise type reference (and nominal voltage value, if required); IECQ reference of detail specification with issue number and/or date when relevant; category of assessed quality as defined in 3.7 of the sectional specification and, if required, screening sequence as defined in 3.6 of the
39、 sectional specification; any other particulars. 8 Test conditions and inspection requirements These are given in the following tables, where the values and exact test conditions to be used shall be specified as required for a given type, and as required by the relevant test in the relevant publicat
40、ion. The choice between alternative tests or test methods shall be made when a detail specification is written. When several devices are included in the same detail specification, the relevant conditions and/or values shall be given on successive lines, where possible avoiding repetition of identica
41、l conditions and/or values. In this clause, reference to clause numbers are made with respect to the generic specification unless otherwise stated and test methods are quoted from clause 4 of the sectional specification. Group A inspection and tests shall be performed on all devices. Group B inspect
42、ion and tests shall be performed on a lot-by-lot basis, sampling of an LTPD =30. Group C and D inspections and tests shall be performed on an LTPD =50. 5.7 Gate trigger voltage: Maximum value V GT A3 5.8 Gate non-trigger voltage: Minimum value V GD A4 5.9 Critical rate of rise of off-state voltage (
43、where appropriate): Minimum value under specified conditions (dV D /dt) cr A4 5.10 Circuit commutated turn-off time (for fast-switching type only): Maximum value under specified conditions t q C2c 5.11 Total power dissipation: The maximum total power dissipation graph as a function of the mean on-st
44、ate current and conduction angle P tot 5.12 Thermal resistance (if T (vj)is specified in 4.3): Junction-to-ambient or junction-to-case maximum value R thJAor R thJC C2c 5.13 Gate controlled turn-on time: Maximum value under specified conditions t gt 5.14 Recovered charge: Maximum value or maximum an
45、d minimum values under specified conditions Q r (note 1) 5.15 Peak reverse recovery current (where appropriate): Maximum value under specified conditions I RM 5.16 Reverse recovery time (where appropriate): Maximum value under specified conditions t rr NOTE 1Where appropriate. Subclause Characterist
46、ics and conditions at T ambor T case= 25 C unless otherwise specified (see clause 4of the generic specification) Symbol Value Tested min. max.BSQC750113:1994 6 BSI 03-2000 GROUP A Lot-by-lot All tests are non-destructive (3.6.6) Inspection or test Symbol Reference Conditions at T ambor T case= 25 C
47、unless otherwise specified (see clause 4 of the generic specification) Inspection requirement limits min. max. Sub-group A1 External visual examination 4.2.1.1 Sub-group A2a inoperatives Inverted polarity or V TM 10 USL or I RRM1 100 USL unless otherwise specified Sub-group A2b Peak on-state voltage
48、 V TM T-101 See clause 5 Repetitive peak reverse current I RRM1 T-102 Repetitive peak off-state current I DRM1 T-103 Sub-group A3 See clause 5 Gate trigger current I GT T-109 Gate trigger voltage V GT T-109 Sub-group A4 See clause 5 Critical rate of rise of off-state voltage, where applicable (dv D / dt)cr T-112 Gate non-trigger voltage V GD T-110 BSQC750113:1994 BSI 03-2000 7 GROUP B Lot-by-lot (in the case of category 1, see 2.6 of the generic specification) from group A LSL = lower specification limit USL = upper specification limit Only tests marked (D) are destructive (3.
