1、Designation: F 980M 96 (Reapproved 2003)METRICStandard Guide forMeasurement of Rapid Annealing of Neutron-InducedDisplacement Damage in Silicon Semiconductor DevicesMetric1This standard is issued under the fixed designation F 980M; the number immediately following the designation indicates the year
2、oforiginal adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon (e) indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide defines the requirements and procedures forte
3、sting silicon discrete semiconductor devices and integratedcircuits for rapid-annealing effects from displacement damageresulting from neutron radiation. This test will produce degra-dation of the electrical properties of the irradiated devices andshould be considered a destructive test. Rapid annea
4、ling ofdisplacement damage is usually associated with bipolar tech-nologies.1.2 This standard does not purport to address all of thesafety concerns, if any, associated with its use. It is theresponsibility of the user of this standard to consult andestablish appropriate safety and health practices a
5、nd deter-mine the applicability of regulatory limitations prior to use.2. Referenced Documents2.1 ASTM Standards:E 666 Practice for CalculatingAbsorbed Dose from Gammaor X Radiation2E 720 Guide for Selection of a Set of Neutron-ActivationFoils for Determining Neutron Spectra Used in Radiation-Hardne
6、ss Testing of Electronics2E 721 Guide for Determining Neutron Energy Spectra withNeutron-Activation Foils for Radiation-Hardness Testingof Electronics2E 722 Practice for Characterizing Neutron Energy FluenceSpectra in Terms ofAn Equivalent Monoenergetic NeutronFluence for Radiation-Hardness Testing
7、of Electronics2F 1032 Guide for Measuring Time-Dependent Total-DoseEffects in Semiconductor Devices Exposed to PulsedIonizing Radiation33. Terminology3.1 Definitions of Terms Specific to This Standard:3.1.1 annealing factorthe ratio of the displacement dam-age (as manifested in device parametric mea
8、surements) as afunction of time following a pulse of neutrons and thedisplacement damage remaining at the time the initial damageachieves quasi equilibrium, approximately 1000 s.3.1.1.1 DiscussionAnnealing factors have typical valuesof 2 to 10 for these periods of time following irradiation; seeRefs
9、 (1, 2, 3, 4, 5, 6, 7).43.1.2 in situ testselectrical measurements made on de-vices before, after, or during irradiation while they remain inthe immediate vicinity of the irradiation location. All rapid-annealing measurements are performed in situ because mea-surement must begin immediately followin
10、g irradiation (usu-ally V0(t).NOTE 4For an IC, the test circuit and parameter to be measured may be significantly different from those shown.FIG. 1 Schematic of a Simple Bipolar Rapid-Annealing Test CircuitF 980M 96 (2003)4REFERENCES(1) Sander, H. H., and Gregory, B. L.,“ Transient Annealing in Semi
11、con-ductor Devices Following Pulsed Neutron Irradiation,” IEEE Trans-actions on Nuclear Science, NS-13, No. 6, December 1966.(2) Harrity, J. W., and Mallon, C. E., Short-Term Annealing in Semicon-ductor Materials and Devices, AFWL-TR-67-45, AD822283, October1967.(3) Gregory, B. L., and Sander, H. H.
12、, “Injection Dependence of TransientAnnealing in Neutron-Irradiated Silicon Devices,” IEEE Transactionson Nuclear Science, NS-14, No. 6, December 1967.(4) Harrity, J. W., Azarewicz, J. L., Leadon, R. E., Colwell, J. F., andMallon, C. E., Experimental and Theoretical Investigation of Func-tional Depe
13、ndence of Rapid Annealing, AFWL-TR-71-28, AD889998,October 1971.(5) Srour, J. R., and Curtis, O. L., Jr., Journal of Applied Physics, No.4082, 1969, p. 40.(6) Leadon, R. E., “Model for Short-Term Annealing of Neutron Damagein P-Type Silicon,” IEEE Transactions on Nuclear Science, NS-17,No. 6, Decemb
14、er 1970.(7) McMurray, L. R., and Messenger, G. C., “Rapid Annealing Factor forBipolar Silicon Devices Irradiated By Fast Neutron Pulse,” IEEETransactions on Nuclear Science, NS-28, No. 6, December 1981.(8) Kelly, J. G., Luera, T. F., Posey, L. D., and Williams, J. G., “SimulationFidelity Issues in R
15、eaction Irradiation of Electronics Reactor Environ-ments,” IEEE Transactions on Nuclear Science, NS-35, No. 6,December 1988.(9) Wrobel, T. F., and Evans, D. C., “Rapid Annealing in AdvancedBipolar Microcircuits,” IEEE Transactions, on Nuclear Science, NS-29, No. 6, December 1982.ASTM International t
16、akes no position respecting the validity of any patent rights asserted in connection with any item mentionedin this standard. Users of this standard are expressly advised that determination of the validity of any such patent rights, and the riskof infringement of such rights, are entirely their own
17、responsibility.This standard is subject to revision at any time by the responsible technical committee and must be reviewed every five years andif not revised, either reapproved or withdrawn. Your comments are invited either for revision of this standard or for additional standardsand should be addr
18、essed to ASTM International Headquarters. Your comments will receive careful consideration at a meeting of theresponsible technical committee, which you may attend. If you feel that your comments have not received a fair hearing you shouldmake your views known to the ASTM Committee on Standards, at
19、the address shown below.This standard is copyrighted by ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959,United States. Individual reprints (single or multiple copies) of this standard may be obtained by contacting ASTM at the aboveaddress or at 610-832-9585 (phone), 610-832-9555 (fax), or serviceastm.org (e-mail); or through the ASTM website(www.astm.org).F 980M 96 (2003)5
