BS QC 750106-1993 Specification for harmonized system of quality assessment for electronic components - Semiconductor discrete devices - Blank detail specification - Field-effect ta.pdf
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1、BRITISH STANDARD BS QC 750106:1993 IEC747-8-2: 1993 Specification for Harmonized system of quality assessment forelectronic components Semiconductor discrete devices Blank detail specification Field-effect transistors for case-rated power amplifier applicationsBSQC750106:1993 BSI 01-2000 ISBN 0 580
2、34163 1 Amendments issued since publication Amd. No. Date CommentsBSQC750106:1993 BSI 01-2000 i Contents Page National foreword ii Introduction 1 Short description 2 Mechanical description 2 Categories of assessed quality 2 Reference data 2 4 Limiting values (absolute maximum system) 3 5 Electrical
3、characteristics 4 6 Marking 6 7 Ordering information 6 8 Test conditions and inspection requirements 6 9 Group D Qualification approval tests 14 10 Additional information (not for inspection purposes) 14BSQC750106:1993 ii BSI 01-2000 National foreword This BritishStandard has been prepared under the
4、 direction of the Electronic Components Standards Policy Committee. It is identical with IEC747-8-2:1993:QC750106 Semiconductor devices Discrete devices Part8: Field-effect transistors Section2. Blank detail specification for field-effect transistors for case-rated power amplifier applications, publ
5、ished by the International Electrotechnical Commission (IEC). A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity fro
6、m legal obligations. Cross-references International Standard a Corresponding BritishStandard IEC68-2-17:1978 BS2011 Environmental testing Part2.1Q:1981 Test Q. Sealing (Identical) IEC191-2:1966 BS3934 Mechanical standardization of semiconductor devices Part2:1992 Schedule of international drawings g
7、iving dimensions (Identical) IEC747-1:1983 BS6493 Semiconductor devices Section1.1:1984 General (Identical) IEC747-2:1983 Section1.2:1984 Recommendations for rectifier diodes (Identical) IEC747-8:1984 Section1.8:1985 Recommendations for field-effect transistors (Identical) IEC747-8-1:1988 BSQC750112
8、:1988 Specification for harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to5W and1GHz (Identical) IEC747-10/ QC700000:1981 BSQC700000:1991 Harm
9、onized system of quality assessment for electronic components. Semiconductor devices. Generic specification for discrete devices and integrated circuits (Identical) IEC747-11/ QC750000:1985 BSQC750000:1986 Harmonized system of quality assessment for electronic components. Discrete semiconductor devi
10、ces. Sectional specification (Identical) IEC749:1984 BS6493 Semiconductor devices Part3:1985 Mechanical and climatic test methods (Identical) a Some standards are undated in the text. Summary of pages This document comprises a front cover, an inside front cover, pagesi and ii, pages1to14 and a back
11、cover. This standard has been updated (see copyright date) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover.BSQC750106:1993 BSI 01-2000 1 Introduction The IEC quality assessment system for electronic components is operated in accordanc
12、e with the statutes of the IEC and under the authority of the IEC. The object of this system is to define quality assessment procedures in such a manner that electronic components released by one participating country as conforming with the requirements of an applicable specification are equally acc
13、eptable in all other participating countries without the need for further testing. This blank detail specification is one of a series of blank detail specifications for semiconductor devices and shall be used with the following IEC publications: 747-10/QC700000:1991, Semiconductor devices. Discrete
14、devices Part10: Generic specification for discrete devices and integrated circuits. 747-11/QC750100:1985, Semiconductor devices. Discrete devices Part11: Sectional specification for discrete devices. Required information Numbers shown in brackets on this and the following page correspond to the foll
15、owing items of required information, which should be entered in the spaces provided. Identification of the detail specification 1 The name of the national standards organization under whose authority the detail specification is issued. 2 The IECQ number of the detail specification. 3 The numbers and
16、 issue numbers of the generic and sectional specifications. 4 The national number of the detail specification, date of issue and any further information, if required by the national system. Identification of the component 5 Type of component. 6 Information on typical construction and applications. I
17、f a device is designed to satisfy several applications, this shall be stated here. Characteristics, limits and inspection requirements for these applications shall be met. If a device is electrostatic sensitive, or contains hazardous materials, e.g.beryllium oxide, a caution statement shall be added
18、 in the detail specification. 7 Outline drawing and/or reference to the relevant document for outlines. 8 Category of assessed quality. 9 Reference data on the most important properties to permit comparison between component types. Throughout this standard, the texts given in square brackets are int
19、ended for guidance to the specification writer and shall not be included in the detail specification. Throughout this standard, when a characteristic or rating applies, “” denotes that a value shall be inserted in the detail specification.BSQC750106:1993 2 BSI 01-2000 Name (address) of responsible N
20、AI (and possibly of body from which specification is available). 1 Number of IECQ detail specification, plus 2 issue number and/or date. ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: Generic specification: Publication747-10/QC700000 Sectional specification: Publication747-11/QC750100
21、and national references if different. 3 National number of detail specification. 4 This box need not be used if national number repeats IECQ number. DETAIL SPECIFICATION FOR: FIELD-EFFECT TRANSISTORS FOR CASE-RATED POWER AMPLIFIER APPLICATION Type number(s) of the relevant device(s). Ordering inform
22、ation: see clause7 of this standard. 5 Mechanical description Outline references: IEC191-2 mandatory if available and/or national if there is no IEC outline. Outline drawing may be transferred to or given with more details in clause10 of this standard. Terminal identification drawing showing pin ass
23、ignments, including graphical symbols. Marking: letters and figures, or colour code. The detail specification shall prescribe the information to be marked on the device, if any. See subclause2.5 of generic specification and/or clause6 of this standard. Polarity indication, if a special method is use
24、d. 7 Short description Case-rated field-effect transistors for power amplifier applications. Device type: Type A: Junction or Schottky gate Type B: Insulated-gate depletion Type C: Insulated-gate enhancement Semiconductor material: Si Polarity: N-channel or P-channel Encapsulation: cavity or non-cav
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