1、 REVISIONS LTR DESCRIPTION DATE APPROVED A Add cage 43611 to list of approved sources, paragraph 6.5. Update boilerplate throughout. 06/04/04 Thomas Hess Selected item drawing REV STATUS REV A A A A A A OF PAGES PAGES 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Original date of drawing PREPARED BY Robert
2、 Petty DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 11 June 1999 CHECKED BY Alan Barone TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5241 APPROVED BY Kendall Cottongim SIZE A CODE IDENT. NO. 037Z3 DWG NO. 99009 REV A PAGE 1 OF 16 AMSC N/A 5961-E040 Provided by IHSNot for
3、ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT. NO. 037Z3 99009 REV A SHEET 2 1. SCOPE 1.1 Scope. This drawing describes the requirements for NPN, silicon, high-power transistors. 1.2 Part Number . The compl
4、ete part number shall be as shown in the following example: 99009 - 01 TXV Drawing number Device type Quality Level (see 1.2.1) (see 1.2.2) 1.2.1 Device types. The device type(s) identify the devices as follows: Device type 1/ Generic Device Figure number Packages01 2N5241 1 TO-3 1.2.2 Quality level
5、. The quality level of the device is as follows: No suffix, TX, and TXV levels correspond to JAN, JANTX, and JANTXV respectively, quality requirements from MIL-PRF-19500, except for qualification (group E inspection). 1.3 Maximum rating. PTPTVCBOVEBOICIBTOPTC= +25C TC= +100C and TSTGW W V dc V dc A
6、dc A dc C150 85.7 400 6 10 5 -65 to +200 1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at TC= +25C, 3C. Limit hFE1/ VCE(sat)1/ CoboVCB= 10 V dc |hfe| IC= 0.2 A dc JCVCE= 5.0 V dc IC= 2.5 A dc IC= 2.5 A dc IB= 0.5 A dc IE= 0 100 kHz f 1 MHz VCE
7、= 10 V dc f = 1 MHz A mA pF C/WMin 15 - - 2.5 - Max 350.7 500 12.5 1.17Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT. NO. 037Z3 99009 REV A SHEET 3 2 APPLICABLE DOCUMENTS 2.1 General.
8、 The documents listed in this section are specified in sections 3 and 4 of this document. This section does not include documents cited in other sections of this document or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this lis
9、t, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this document, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
10、 part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specification and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). DEPARTMENT OF DEFENSE
11、 SPECIFICATION MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch or http:/www.dodssp.daps.mil or from the Stan
12、dardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supers
13、edes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 3.2 Abbreviations, symbol, and definitions. Abbreviations, symbols, and defin
14、itions used herein shall be as specified in MIL-PRF-19500. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-19500. Package dimensions shall be in accordance with figure 1 of this drawing. 3.3.1 Lead finish. Lead fin
15、ish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and herein. 3.3.2 Internal construction. Multiple chip construction shall not be permitted. 3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5 Manufacturer eligibility. To be eligible to supply devices to this dr
16、awing, the manufacturer shall have an approved facility in accordance with MIL-PRF-19500 for at least one line and at least one qualified JAN device listed on QML-19500. Approved sources must also successfully pass first article testing in accordance with paragraph 4.3 herein. Approved sources will
17、be listed in section 6 of this drawing after they pass first article testing. In addition, all devices specified herein shall meet all requirements of MIL-PRF-19500 except qualification requirements. It is prohibited for a manufacturer not listed on this drawing to mark devices with this drawing num
18、ber except for the purposes of first article testing. 3.6 Certificate of conformance. A certificate of conformance shall be provided with each lot of devices delivered in accordance with this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-D
19、EFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT. NO. 037Z3 99009 REV SHEET 4 Symbol Dimensions Inches Millimeters Min Max Min Max CD 0.875 22.23CH 0.250 0.328 6.35 8.33 HR 0.495 0.525 12.57 13.34HR1 0.131 0.188 3.33 4.78 HT 0.060 0.135 1.52 3.43LD 0.038 0.043 0.97 1.09 LL 0.312 0.500
20、 7.92 12.70L1 0.050 1.27MHD 0.151 0.161 3.84 4.09 MHS 1.177 1.197 29.90 30.40PS 0.420 0.440 10.67 11.18 PS1 0.205 0.225 5.21 5.72S1 0.655 0.675 16.64 17.15 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Terminal 1, emitter; terminal 2,base; case,
21、 collector. 4. These dimensions should be measured at points .050-.055 inch (1.27-1.40 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 5. The seating plane of the header shall be flat within .004 inch (0.10 mm) concave to .004 inch (0.10 mm) convex ins
22、ide a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .006 inch (0.15 mm) concave to .006 inch (0.15 mm) convex overall. 6. Collector shall be electrically connected to the case. 7. LD applies between L1and LL. Diameter is uncontrolled in L1. FIGURE 1. Semiconductor
23、device, diode all types. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT. NO. 037Z3 99009 REV SHEET 5 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspectio
24、n shall be in accordance with MIL-PRF-19500, and as specified herein. 4.2 Screening. All devices shall be screened in accordance with, table IV of MIL-PRF-19500 (TXV requirements) and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed
25、 the limits of table I herein shall not be acceptable. Screen (see table IV Measurement of MIL-PRF-19500) TX and TXV levels 4 see 4.4.5 9 ICEX111 ICEX1and hhfe2; ICEX1= 100%of initial value or.05 mA dc, whichever is greater 12 See 4.2.1 13 Subgroup 2 of table I herein; ICEX1 = 100% of initial value
26、or .05 mA dc, whichever is greater; hFE2= +25%, -15% of initial value 4.2.1 Power burn-in conditions. TJ= 187.5 12.5C; VCB= 35 5 V dc; TA= 100C. 4.3 Conformance inspection. Conformance inspection shall consist of the examinations and tests specified in groups A, B and C. 4.3.1 Group A inspection. Gr
27、oup A inspection shall be conducted in accordance with the conditions specified for subgroup testing in table I. 4.3.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for the group testing in table V1b of MIL-PRF-19500. Electrical measurements sh
28、all be in accordance with the applicable steps of table II herein. Subgroup Method Condition B3 1027 TJ= 187.5C 12.5C; VCB= 35 5 V dc; TA= 100C. B5 3101 See 4.4.2. B6 1032 TA= +200C. B7 Safe operating area, (clamped inductive), (destructive); See figures 6 and 7, TC= 25C; IC = 10 A dc; VCC= 375 V dc
29、 ; RL 2.5 ; clamp voltage = 400+0, -5 V dc; Device fails if clamp voltage is not reached. Duty cycle 10%. Sampling plan: 10 devices, c = 0 B7 3053 Safe operating area (switching), see figure 5; Load condition C; (unclamped inductive load); TC= 25C; duty cycle 10%, RS= 0.1. sampling plan: 10 devices,
30、 c = 0 Test 1: Tp 5 ms (vary to obtain IC); RBB1= 4 ; VBB1= 10 V dc; RBB2= , VBB2= 0; VCC= 25 V dc, IC= 10 A dc, L = 10 mH, Q 150 1 kHz, R 0.25 ; f 100 kHz. Test 2: Tp 5 ms (vary to obtain IC); RBB1= 20 ; VBB1= 10 V dc; RBB2= , VBB2= 0; VCC= 25 V dc, IC= 3.4 A dc, L = 100 mH, Q 150 1 kHz, R 1.0 ; fr
31、 30 kHz. B8 2006 One minute minimum in the Y1 orientation at 30,000G minimum. Only required when lot complies with 4.4.5. sampling plan: 5 devices, c = 0 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO S
32、IZE A CODE IDENT. NO. 037Z3 99009 REV A SHEET 6 4.3.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accor
33、dance with the applicable steps of table II herein. Subgroup Method Conditions C2 1056 Test condition B. C2 2036 Test condition A, weight = 10 lbs, application time = 15 seconds. C6 1026 VCE= 30 V dc; PT= 85.7 W at TC= 100C or 100C TC 125C with PTvaried, according to the chosen TC, to achieve TJ= 18
34、7.5C, 12.5C. (See 4.4.3) 4.4 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.4.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.4.2 Thermal resistance. Thermal resistance measure
35、ments shall be conducted in accordance with test method 3131 of MIL-STD-750. The following details shall apply. a. Collector current magnitude during power application shall be 2.50 A dc. b. Collector to emitter voltage magnitude shall be 20 V dc. c. Reference temperature measuring point shall be th
36、e case. d. Reference temperature measuring point shall be within the range 25C TR 75C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header. f. Maximum limit of RJCshall be 1.17C/W. 4.4.3 Group C life test. The group C sample (TCtest conditions) shall be
37、drawn from the devices, which were drawn for the group B sample (TJtest conditions). 4.4.4 Inspection conditions. Unless otherwise specified in MIL-PRF-19500 or herein, all inspections shall be conducted at a case temperature (TC) of +25C 3C. 4.4.5 Constant acceleration. Only devices constructed wit
38、h aluminum bonding wire, which successfully pass three consecutive lots with zero failures, shall not require this test as a 100 percent screen on future inspection lots. In the event the sample fails the LTPD requirements of group B inspection, and the failures are catastrophic, (i.e., open or shor
39、ted condition), as verified by failure analysis, then 100 percent screening shall be re-instituted. The 100 percent screen shall be required on the failed lot and following lots until three successive inspection lots pass the constant acceleration test with zero failures. Only then may sampling insp
40、ection be resumed. End point measurements for this screening test shall be those required by screen 11. Only device failures, verified by failure analysis, caused by the constant acceleration test shall be counted as failures for this screening test. All sample devices, which are drawn for constant
41、acceleration inspection, shall have successfully completed thermal shock inspection (minimum of 20 cycles). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT. NO. 037Z3 99009 REV SHEET 7
42、TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Collector to emitter sustaining voltage - IC= 100 mA: L = 50 mH; f = 30-60 Hz (see figure 2) V(BR)CEO325 V dc Emitter to base cutoff current
43、 3061 Bias condition D; VEB= 6.0 V dc IEBO12.0 mA dc Collector to emitter cutoff Current 3041 Bias condition D; VCE= 400 V dc ICEO0.5 mA dc Collector to emitter cutoff Current 3041 Bias condition D; VBE= -1.5 V dc VCE= 400 V dc ICEX10.5 mA dc Forward-current transfer ratio 3076 VCE= 5 V dc, IC= 1 A
44、dc pulsed (see 4.4.1) hFE125 - Forward-current transfer ratio 3076 VCE= 5 V dc, IC= 2.5 A dc pulsed (see 4.4.1) hFE215 35 Forward-current transfer ratio 3076 VCE= 5 V dc, IC= 3.5 A dc pulsed (see 4.4.1) hFE310 Forward-current transfer ratio 3076 VCE= 5 V dc, IC= 5 A dc pulsed (see 4.4.1) hFE45 Base
45、to emitter voltage (saturated) 3066 Test condition A; IB= 0.5 A dc : IC= 2.5 A dc pulsed (see 4.4.1) VBE(sat)11.5 V dc Base to emitter voltage (saturated) 3066 Test condition A; IB= 1 A dc : IC= 5 A dc pulsed (see 4.4.1) VBE(sat)22.0 V dc Collector to emitter voltage (saturated) 3071 IC= 2.5 A dc :
46、IB= 0.5 A dc pulsed (see 4.4.1) VCE(sat)10.7 V dc Collector to emitter voltage (saturated) 3071 IC= 5 A dc : IB= 1 A dc pulsed (see 4.4.1) VCE(sat)22.0 V dc Subgroup 3 High temperature operation: TA= 150C Collector to emitter cutoff Current 3041 Bias condition A; VBE= -1.5 V dc VCE= 400 V dc ICEX22.
47、5 mA dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT. NO. 037Z3 99009 REV SHEET 8 TABLE I. Group A inspection. MIL-STD-750 Limits Inspection 1/ Method
48、Conditions Symbol Min Max Unit Subgroup 3 - continued Low temperature operation: TA= -55C Forward-current transfer ratio 3076 VCE= 5 V dc, IC= 3.5 A dc pulsed (see 4.4.1) hFE510 Subgroup 4 Magnitude of common emitter small-signal short-circuit forward-current gain ratio 3306 VCE= 10 V dc, IC= 0.2 A dc f = 1 MHz |hfe| 2.5 12.5 Open circuit output capacitance 2071 VCB= 10 V dc, IE= 0; 100 kHz f 1 MHz Cobo500 pF Pulse response: Turn-on time 3251 Test cond. A; VCC= 125 V dc; IC = 2.5 A dc; IB1= 0.2
