1、 MIL-M-38510/320D w/AMENDMENT 1 4 June 2008 SUPERSEDING MIL-M-38510/320D 14 July 2003 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, COUNTERS, CASCADABLE, MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the Department of De
2、fense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, binary and decade counters. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part num
3、ber. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.3). 1.2 Part number. The part number should be in accordance with MIL-PRF-38535, and as specified herein. 1.2.1 Device types. The device types should be as follows: Device type Circuit 01 Presettable
4、 decade counter, cascadable 02 Presettable 4 - bit binary counter, cascadable 03 Decade counter 04 4 - bit binary counter 1.2.2 Device class. The device class should be the product assurance level as defined in MIL-PRF-38535. 1.2.3 Case outlines. The case outlines should be as designated in MIL-STD-
5、1835 and as follows: Outline letter Descriptive designator Terminals Package style A GDFP5-F14 or CDFP6-F14 14 Flat pack B GDFP4-F14 14 Flat pack C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack X CQCC2-N20 20 Square leadless chip carrier 2 CQCC1-N20 20 Square leadless
6、chip carrier Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAS, P. O. Box 3990, Columbus, OH 43218-3990, or emailed to bipolardla.mil. Since contact information can change, you may want to verify the currency of thi
7、s address information using the ASSIST Online database at http:/assist.daps.dla.mil. AMSC N/A FSC 5962 INCH-POUNDInactive for new design after 18 April 1997. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/320D w/AMENDMENT 1 2 1.3 Absolut
8、e maximum ratings. Supply voltage range . -0.5 V dc to +7.0 V dc Input voltage range -1.5 V dc at -18 mA to +5.5 V dc Storage temperature range -65 to +150C Maximum power dissipation, (PD) 1/ Device type 01 and 02 148.5 mW Device type 03 and 04 82.5 mW dc Lead temperature (soldering, 10 seconds) +30
9、0C Thermal resistance, junction to case (JC): Cases A, B, C, D, X, and 2 (See MIL-STD-1835) Junction temperature (TJ) 2/ . +175C 1.4 Recommended operating conditions. Supply voltage (VCC) 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) . 2.0 V dc Maximum low level input v
10、oltage (VIL) 0.7 V dc Normalized fanout (each output) 10 maximum Width of input count pulse, tp(IN) Types 01 and 02 0CP 20 ns minimum 1CP . 30 ns minimum Types 03 and 04 Input A . 17 ns minimum Input B . 34 ns minimum Width of reset pulse, tp(reset)Types 01 and 02 20 ns minimum Types 03 and 04 25 ns
11、 minimum Input clock frequency, fclockTypes 01 and 02 0CP 0 to 30 MHz 1CP . 0 to 15 MHz Types 03 and 04 Input A . 0 to 29 MHz Input B . 0 to 13 MHz Width of parallel load pulse, tW( PL ) Types 01 and 02 20 ns minimum Setup time, t(SETUP)Data inputs high 10 ns minimum Data inputs low 15 ns minimum En
12、able time from load, reset to clock tENTypes 01 and 02 20 ns minimum Hold time at data inputs, tHTypes 01 and 02 20 ns minimum Case operating temperature range (TC) . -55 to +125C _ 1/ Must withstand the added PDdue to short-circuit test (e.g., IOS). 2/ Maximum junction temperature shall not be exce
13、eded except in accordance with allowable short duration burn-in screening condition in accordance with MIL-PRF-38535. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/320D w/AMENDMENT 1 3 2. APPLICABLE DOCUMENT 2.1 General. The documents l
14、isted in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list,
15、document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications and standards. The following specifications and standards form a part of this sp
16、ecification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFE
17、NSE STANDARDS MIL-STD-883 - Test Method Standard for Microelectronics. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, B
18、uilding 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this specification and the references cited herein, the text of this document takes precedence. Nothing in this document, however, super
19、sedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable quali
20、fied manufacturers list before contract award (see 4.3 and 6.4). 3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall no
21、t affect the form, fit, or function as described herein. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein. 3.3.1 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3
22、.2 Logic diagrams. The logic diagrams shall be as specified on figure 2. 3.3.3 Truth tables. The truth tables shall be as specified on figure 3. 3.3.4 Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to the qualifying activity and the preparing ac
23、tivity upon request. 3.3.5 Case outlines. The case outlines shall be as specified in 1.2.3. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/320D w/AMENDMENT 1 4 3.4 Lead material and finish. The lead material and finish shall be in accord
24、ance with MIL-PRF-38535 (see 6.6). 3.5 Electrical performance characteristics. The electrical performance characteristics are as specified in table I, and apply over the full recommended case operating temperature range, unless otherwise specified. 3.6 Electrical test requirements. The electrical te
25、st requirements for each device class shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table III. 3.7 Marking. Marking shall be in accordance with MIL-PRF-38535. 3.8 Microcircuit group assignment. The devices covered by this specification shall be
26、 in microcircuit group number 12 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall n
27、ot effect the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38535 and shall be conducted on all devices prior to qualification and quality conformance inspection. The following additional criteria shall apply: a. The burn-in test duration, t
28、est condition, and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturers Technology Review Board (TRB) in accordance with M
29、IL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. b. Interim and final electrical
30、test parameters shall be as specified in table II, except interim electrical parameters test prior to burn-in is optional at the discretion of the manufacturer. c. Additional screening for space level product shall be as specified in MIL-PRF-38535. 4.3 Qualification inspection. Qualification inspect
31、ion shall be in accordance with MIL-PRF-38535. 4.4 Technology Conformance Inspection (TCI). Technology conformance inspection shall be in accordance with MIL-PRF-38535 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4). Provided by IHSNot for ResaleNo reproduction or networki
32、ng permitted without license from IHS-,-,-MIL-M-38510/320D w/AMENDMENT 1 5 TABLE I. Electrical performance characteristics. Test Symbol Conditions Device Limits Unit -55C TC +125C unless otherwise specified types Min Max High level output voltage VOHVCC= 4.5 V, VIL= 0.7 V, All 2.5 V VIH= 2.0 V, IOH=
33、 -400 A, Low level output voltage VOLVCC= 4.5 V, VIH= 2.0 V, 1/ All 0.4 V IL= 0.7 V, IOL= 4 mA, Input clamp voltage VICVCC= 4.5 V, IIN= -18 mA, All -1.5 V TC= +25C High level input current IIH1VCC= 5.5 V, VIN= 2.7 V 03, 04 20 A at reset inputs 01, 02 40 High level input current IIH2VCC= 5.5 V, VIN=
34、5.5 V 03, 04 100 A at reset inputs 01, 02 200 High level input current IIH3VCC= 5.5 V, VIN= 2.7 V 03, 04 80 A at input A High level input current IIH4VCC= 5.5 V, VIN= 5.5 V 03, 04 400 A at input A High level input current IIH5VCC= 5.5 V, VIN= 2.7 V 03 160 A at input B 04 80 High level input current
35、IIH6VCC= 5.5 V, VIN= 5.5 V 03 800 A at input B 04 400 High level input current IIH7VCC= 5.5 V, VIN= 2.7 V 01, 02 20 A at load, data inputs High level input current IIH8VCC= 5.5 V, VIN= 5.5 V 01, 02 100 A at load, data inputs High level input current at 0CP IIH9VCC= 5.5 V, VIN= 2.7 V 01, 02 40 A High
36、 level input current at 0CP IIH10VCC= 5.5 V, VIN= 5.5 V 01, 02 200 A High level input current at 1CP IIH11VCC= 5.5 V, VIN= 2.7 V 01, 02 80 A High level input current at 1CP IIH12VCC= 5.5 V, VIN= 5.5 V 01, 02 400 A Low level input current IIL1VCC= 5.5 V, VIN= 0.4 V 03, 04 -30 -400 A at reset inputs 0
37、1, 02 -120 -800 Low level input current IIL2VCC= +5.5 V, VIN= +0.4 V 03, 04 -0.5 -2.4 mA at input A Low level input current IIL3VCC= +5.5 V, VIN= +0.4 V 03, 04 -0.4 -3.2 mA at input B Low level input current IIL4VCC= 5.5 V, VIN= 0.4 V 01, 02 -120 -400 A at load, data inputs Low level input current a
38、t 0CP IIL5VCC= 5.5 V, VIN= 0.4 V 01, 02 -0.6 -2.6 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/320D w/AMENDMENT 1 6 TABLE I. Electrical performance characteristics. Test Symbol Conditions Device Limits
39、 Unit -55C TC +125C unless otherwise specified types Min Max Low level input current at 1CP IIL6VCC= 5.5 V, VIN= 0.4 V 01 -0.4 -3.2 mA 02 -0.4 -1.6 Short circuit output current IOSVCC= 5.5 V 2/ 01, 02 -15 -100 mA 03, 04 -15 -130 Supply current ICCVCC= 5.5 V, VIN= 0 V 3/ 01, 02 27 mA 03, 04 15 Maximu
40、m count frequency fMAXVCC= 4.5 V, CL= 50 pF 10% 01, 02 30 MHz at input 0CP RL= 2 k Maximum count frequency fMAX01, 02 15 MHz at input 1CP Maximum input A count fMAXVCC= 5.0 V, CL= 50 pF 10%, 03, 04 29 MHz frequency RL= 2 k Propagation delay time tPLH103, 04 3 74 ns low to high, A to QC 4/ Propagatio
41、n delay time tPHL103, 04 3 81 ns high to low, A to QC 4/ Propagation delay time tPLH203 3 52 ns low to high, B to QD 04 3 78 Propagation delay time tPHL203 3 56 ns high to low, B to QD 04 3 78 Propagation delay time tPLH301, 02 3 100 ns low to high, 0CP to Q2 5/ Propagation delay time tPHL301, 02 3
42、107 ns high to low, 0CP to Q2 5/ Propagation delay time tPLH401 3 38 ns low to high, 1CP to Q3 02 3 78 Propagation delay time tPHL401 3 52 ns high to low, 1CP to Q3 02 3 110 Propagation delay time tPLH501, 02 3 46 ns low to high, load to Q Propagation delay time tPHL501, 02 3 65 ns high to low, load
43、 to Q Propagation delay time tPHL602 3 46 ns high to low, reset to Q 1/ Input B ( 1CP ) is connected to QA (Q0) during the VOLtest. 2/ Not more than one output should be shorted at a time. 3/ ICCis measured with all outputs open, both Ro inputs grounded following momentary connection to 4.5 V and al
44、l other inputs grounded. 4/ When testing tPHL1or tPLH1, the QA pin shall be connected to the input B pin. 5/ When testing tPHL3or tPLH3, the Q0 pin shall be connected to the 1CP pin. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/320D w/
45、AMENDMENT 1 7 TABLE II. Electrical test requirements. Subgroups (see table III) MIL-PRF-38535 test requirements Class S devices Class B devices Interim electrical parameters 1 1 Final electrical test parameters 1*, 2, 3, 7, 9, 10, 11 1*, 2, 3, 7, 9 Group A test requirements 1, 2, 3, 7, 8, 9, 10, 11
46、1, 2, 3, 7, 8, 9, 10, 11 Group B electrical test parameters when using the method 5005 QCI option 1, 2, 3, 7, 8, 9, 10, 11 N/A Group C end-point electrical parameters 1, 2, 3, 7, 8 9, 10, 11 1, 2, 3 Group D end-point electrical parameters 1, 2, 3 1, 2, 3 *PDA applies to subgroup 1. 4.4.1 Group A ins
47、pection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows: a. Tests shall be as specified in table II herein. b. Subgroups 4, 5, and 6 shall be omitted. 4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535. 4.4.3 G
48、roup C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows: a. End-point electrical parameters shall be as specified in table II herein. b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained un
