1、 MIL-M-38510/339E 22 March 2011 SUPERSEDING MIL-M-38510/339D 18 February 2004 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DATA SELECTORS/MULTIPLEXERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies
2、 of the Department of Defense. The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF 38535 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, advanced Schottky TTL, data selectors and multiplexers (three-sta
3、te) microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.3). 1.2 Part or Identifying Numbe
4、r (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein. 1.2.1 Device types. The device types are as follows: Device type Circuit 01 8 - input, data selector/multiplexer 02 Dual, 4 - input, data selector/multiplexer 03 Quad, 2 - input, data selector/multiplexer 04 Quad, 2 - inp
5、ut, data selector/multiplexer with inverted output 05 8 - input, data selector/multiplexer with 3 - state outputs 06 Quad, 2 - input, data selector/multiplexer with 3 - state outputs 07 Quad, 2 - input, data selector/multiplexer with 3 - state inverted output 08 Dual, 4 - input, data selector/multip
6、lexer with 3 - state outputs 09 Dual, 4 - input, data selector/multiplexer with inverted outputs 10 Dual, 4 - input, data selector/multiplexer with 3 - state inverted outputs 1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535. 1.2.3 Case outlines. The cas
7、e outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier Comments, suggestions, or questions on this document s
8、hould be addressed to: DLA Land and Maritime, ATTN: DLA Land and Maritime- VAS, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to bipolardscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/
9、assist.daps.dla.mil. AMSC N/A FSC 5962 INCH-POUND Reactivated after 18 February 2004 and may be used for either new or existing design acquisition. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/339E 2 1.3 Absolute maximum ratings. Suppl
10、y voltage range -0.5 V dc to +7.0 V dc Input voltage range . -1.2 V dc at -18 mA to +7.0 V dc Storage temperature range -65 to +150C Maximum power dissipation, per device (PD) 1/ Device type 01 116 mW Device type 02 110 mW Device type 03 127 mW Device type 04 83 mW Device type 05 132 mW Device type
11、06 127 mW Device type 07 127 mW Device type 08 121 mW Device type 09 110 mW Device type 10 127 mW Lead temperature (soldering, 10 seconds) . +300C Thermal resistance, junction to case (JC): Cases E, F, and 2 . (See MIL-STD-1835) Junction temperature (TJ) 2/ . 175C 1.4 Recommended operating condition
12、s. Supply voltage (VCC) . 4.5 V minimum to 5.5 V maximum Minimum high level input voltage (VIH) . 2.0 V dc Maximum low level input voltage (VIL) 0.8 V dc Case operating temperature range (TC) . -55 to +125C 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in se
13、ctions 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they mu
14、st meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications and Standards. The following specifications and standards form a part of this specification to the extent specified herei
15、n. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method S
16、tandard for Microelectronics. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.
17、) _ 1/ Must withstand the added PDdue to short-circuit test (e.g., IOS). 2/ Maximum junction temperature shall not be exceeded except in accordance with allowable short duration burn-in screening condition in accordance with MIL-PRF-38535. Provided by IHSNot for ResaleNo reproduction or networking p
18、ermitted without license from IHS-,-,-MIL-M-38510/339E 3 2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulatio
19、ns unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before cont
20、ract award (see 4.3 and 6.4). 3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function
21、 as described herein. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein. 3.3.1 Terminal connections and pin assignments. The terminal connections and pin assignments shall be as specified on figure 1
22、. 3.3.2 Logic diagrams. The logic diagrams shall be as specified on figure 2. 3.3.3 Truth tables. The truth tables shall be as specified on figure 3. 3.3.4 Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to the qualifying activity and the prepari
23、ng activity upon request. 3.3.5 Case outlines. The case outlines shall be as specified in 1.2.3. 3.4 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6). 3.5 Electrical performance characteristics. The electrical performance characteristics are
24、as specified in table I, and apply over the full recommended case operating temperature range, unless otherwise specified. 3.6 Electrical test requirements. The electrical test requirements for each device class shall be the subgroups specified in table II. The electrical tests for each subgroup are
25、 described in table III. 3.7 Marking. Marking shall be in accordance with MIL-PRF-38535. 3.8 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 11 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking p
26、ermitted without license from IHS-,-,-MIL-M-38510/339E 4 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not effect
27、 the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38535 and shall be conducted on all devices prior to qualification and quality conformance inspection. The following additional criteria shall apply: a. The burn-in test duration, test condi
28、tion, and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38
29、535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. b. Interim and final electrical test para
30、meters shall be as specified in table II, except interim electrical parameters test prior to burn-in is optional at the discretion of the manufacturer. c. Additional screening for space level product shall be as specified in MIL-PRF-38535. 4.3 Qualification inspection. Qualification inspection shall
31、 be in accordance with MIL-PRF-38535. 4.4 Technology Conformance inspection (TCI). Technology conformance inspection shall be in accordance with MIL-PRF-38535 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. Group A inspection shall be in accordan
32、ce with table III of MIL-PRF-38535 and as follows: a. Tests shall be as specified in table II herein. b. Subgroups 4, 5, and 6 shall be omitted. 4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535. 4.4.3 Group C inspection. Group C inspection shall be i
33、n accordance with table IV of MIL-PRF-38535 and as follows: a. End-point electrical parameters shall be as specified in table II herein. b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in
34、 accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall speci
35、fy the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. 4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End-point electrical parameters shall be as specified i
36、n table II herein. 4.5 Methods of inspection. Methods of inspection shall be specified as follows: 4.5.1 Voltage and current. All voltages given are referenced to the microcircuit ground terminal. Currents given are conventional and positive when flowing into the referenced terminal. Provided by IHS
37、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/339E 5 TABLE I. Electrical performance characteristics. Test Symbol Conditions Device Limits Unit -55C TC +125C type Min Max High level output voltage VOHVCC= 4.5 V, VIL= 0.8 V, IOH= -1.0 mA 01, 02, 03, 04
38、, 09 2.5 V VIH= 2.0 V IOH= -3.0 mA 05, 06, 07, 08, 10 2.4 V Low level output voltage VOLVCC= 4.5 V, IOL= 20 mA, All 0.5 V VIH= 2.0 V, VIL= 0.8 V Input clamp voltage VI CVCC= 4.5 V, IIN= -18 mA, All -1.2 V TC= +25C High level input current IIH1VCC= 5.5 V, VIH= 2.7 V All 20 A IIH2VCC= 5.5 V, VIH= 7.0
39、V All 100 A Low level input current IILVCC= 5.5 V, VIL= 0.5 V All -.03 -.60 mA Short circuit output current IOSVCC= 5.5 V, VOS= 0 V All -60 -150 mA 1/ Output drive IODVCC= 4.5 V, 01, 04, 09 60 mA 02, 03, 05, 06, 07, 08, 10 35 mA Supply current ICCVCC= 5.5 V, VOS= 0 V 01 21 mA 02 20 mA 03 23 mA 04 15
40、 mA 05 22 mA High level supply current ICCHVCC= 5.5 V 06 15 mA 07 9.5 mA 08 16 mA 09 14 mA 10 14 mA Low level supply current ICCLVCC= 5.5 V 06 22 mA 07 23 mA 08 23 mA 09 20 mA 10 20 mA 1/ Not more than one output should be shorted at a time. Provided by IHSNot for ResaleNo reproduction or networking
41、 permitted without license from IHS-,-,-MIL-M-38510/339E 6 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions Device Limits Unit -55C TC +125C type Min Max Off state supply current ICCZVCC= 5.5 V 05 24 mA Outputs disabled 06 23 mA 07 17 mA 08 23 mA 10 23 mA Off state
42、 output leakage IOZHVCC= 5.5 V, VZH= 2.7 V 05, 06, 07, 50 A cuurent 08, 10 IOZLVCC= 5.5 V, VZL= 0.5 V -50 A Propagation delay time, tPLH1VCC= 5.5 V 01 2.5 8.5 ns low to high level, data to Z (see figure 4) 02 2.5 9.0 ns output 03 2.5 7.5 ns 05 2.5 9.0 ns 06 2.0 7.0 ns 08 2.5 9.0 ns Propagation delay
43、 time, tPLH201 2.5 7.5 ns low to high level, data to Z 04 2.5 8.5 ns output 05 2.5 8.5 ns 07 2.0 7.5 ns 09 2.0 9.0 ns 10 1.5 9.0 ns Propagation delay time, tPLH301 4.5 13.5 ns low to high level, select to Z 02 4.5 14.0 ns output 03 4.0 12.0 ns 05 3.5 14.0 ns 06 3.5 11.5 ns 08 3.5 15.0 ns Propagation
44、 delay time, tPLH401 3.5 11.5 ns low to high level, select to 04 3.0 10.5 ns Z output 05 3.5 11.5 ns 07 3.0 9.5 ns 09 3.5 14.5 ns 10 4.0 16.0 ns Propagation delay time, tPLH501 4.0 12.0 ns low to high level, enable 02 4.5 11.5 ns to Z output 03 5.0 13.0 ns Propagation delay time, tPLH601 3.0 7.5 ns
45、low to high level, enable to 04 2.5 8.0 ns Z output 09 3.5 17.0 ns Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/339E 7 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions Device Limits Unit -55C TC +125C
46、 type Min Max Propagation delay time, tPHL1VCC= 5.5 V 01 3.5 9.0 ns high to low level, data to Z (see figure 4) 02 2.5 8.0 ns output 03 1.5 7.5 ns 05 3.5 9.0 ns 06 1.5 7.0 ns 08 2.5 8.0 ns Propagation delay time, tPHL201 1.5 6.0 ns high to low level, data to Z 04 1.5 5.0 ns output 05 1.0 6.0 ns 07 1
47、.0 6.0 ns 09 1.5 7.5 ns 10 1.5 7.5 ns Propagation delay time, tPHL301 4.0 9.5 ns high to low level, select to Z 02 3.5 11.0 ns output 03 3.0 9.0 ns 05 3.0 10.5 ns 06 2.5 9.0 ns 08 2.5 11.0 ns Propagation delay time, tPHL401 3.0 8.0 ns high to low level, select to 04 2.5 8.0 ns Z output 05 3.2 8.0 ns
48、 07 2.5 9.0 ns 09 3.5 15.0 ns 10 4.0 14.0 ns Propagation delay time, tPHL501 3.0 8.0 ns high to low level, enable 02 2.5 9.0 ns to Z output 03 2.5 7.5 ns Propagation delay time, tPHL601 2.5 6.5 ns high to low level, enable to 04 2.0 8.5 ns Z output 09 3.0 13.0 ns Propagation delay time, tPLZ505 1.0 5.5 ns low level to off state, output 06 2.0 8.5
