1、 MILPRF19500/553E 21 July 2011 SUPERSEDING MILPRF19500/553D 5 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6391, JAN, JANTX, JANTXV, JANS, AND JANHC This specification is approved for use by all Departments and Agencies of th
2、e Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MILPRF19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a silicon, fast recovery, schottky barrier semiconductor diode, intended for
3、use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MILPRF19500. One level of product assurance is provided for each unencapsulated device type.
4、 1.2 Physical dimensions. See figure 1 (DO4) and figure 2 (die). 1.3 Maximum ratings. Unless otherwise specified TA= +25C. Type VRRMand VRWM(1) VRSMVR(1) IFM(2) IO(3) IFSM TJand TSTGMax RJCTC= +125C TC= +125C 1N6391 V(pk) V(pk) V dc A dc A dc A (pk) C C/W 45 54 45 25 22.5 600 55 to +175 2.0 (1) Full
5、 rated VRRMand VRWMis applicable over the range of TC= 55C to +165C for IFM= 0. Full rated VRis applicable over the temperature range of TC= 55 to +155C. When VR= 45 V dc and TC= +155C, then TJ= 175C. (2) Average current with a 50 percent duty cycle square wave including reverse amplitude equal to t
6、he magnitude of full rated VRWM. Derate linearly at 0.625 A dc/C for TC +125C. (3) Full rated VRRMis applicable over the range TC = 55C to +169C IO= 0 and TJ= 175C. (4) For temperature-current derating curves, see figure 3. 1.4 Primary electrical characteristics. Unless otherwise specified TC= +25C.
7、 Type Max VFM1IFM= 50 A (pk) Max VFM2IFM= 5 A (pk) Max IRMVRM45 V (pk) Max CTVR= 5 V dc TJ= +25C TJ= +175C 1N6391 V (pk) V (pk) mA (pk) mA (pk) pF 0.68 0.50 1.5 220 2,000 AMSC N/A FSC 5961 INCHPOUND Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, AT
8、TN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil. The documentation and process conversion measures
9、 necessary to comply with this revision shall be completed by 21 October 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/553E 2 Ltr Dimensions Notes Inches Millimeters Min Max Min Max C .250 6.35 5 CD .265 .424 6.73 10.77 6 CH .300
10、.405 7.62 10.29 C1.018 .065 0.46 1.65 5 HF .403 .437 10.24 11.10 6 HT1 .075 .175 1.91 4.45 7 HT2.060 1.53 7 OAH .600 .800 15.24 20.32 SD SL .422 .453 10.72 11.51 SU .078 1.98 8 UD .163 .189 4.14 4.80 T .060 .103 1.52 2.62 NOTES: 1. Dimensions are in inches. Millimeters are given for general informat
11、ion only. 2. See 3.4.2 for the polarity of the terminals. 3. Threads are 1032 UNF2A in accordance with FEDSTDH28, “Screw-Thread Standards for Federal Services“). Maximum pitch diameter (SD) of plated threads shall be basic pitch diameter .1697 inch (4.31 mm). 4. Device shall not be damaged by a torq
12、ue of 15 inchpounds applied to a 1032 UNF2B nut assembled on thread. 5. The angular orientation and peripheral configuration of terminal 1 is undefined, however, the major surfaces over dimension C and C1shall be flat. 6. Dimension CD can not exceed dimension HF. 7. A chamfer or undercut on one or b
13、oth ends of the hex portion is optional; minimum base diameter at seating plane .403 inch (10.24 mm). 8. Length of incomplete or undercut threads UD. 9. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (DO4). Provided by IHSNot for ResaleNo repro
14、duction or networking permitted without license from IHS-,-,-MILPRF19500/553E 3 Ltr Dimensions Inches Millimeters Min Max Min Max A .167 .177 4.24 4.50 B .175 .185 4.45 4.70 C .012 .013 0.305 0.330 The metallization characteristics of the die are: Anode (front): Ag Cathode (back): Ag NOTES: 1. Dimen
15、sions are in inches. Millimeters are given for general information only. 2. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. JANHC die dimensions (A version). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF195
16、00/553E 4 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every
17、effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and ha
18、ndbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devic
19、es, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MILSTD750 Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue
20、, Building 4D, Philadelphia, PA 191115094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersed
21、es applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MILPRF19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufa
22、ctured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in MILPR
23、F19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MILPRF19500, figure 1 (DO4), and figure 2 (die) herein. 3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MILPRF19500, MILSTD750, and herein (
24、see 6.2). 3.4.2 Polarity. Devices in DO4 package (see figure 1) shall have the cathode electrically connected to the stud (term 2). The polarity of unpackaged JANHC die shall be as identified on figure 2. 3.5 Marking. Marking shall be in accordance with MILPRF19500. 3.6 Electrical performance charac
25、teristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/553E 5 3.7 Electrical test requirements. The ele
26、ctrical test requirements shall be as specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of i
27、nspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification. Qualification inspection shall be in accordance with MILPRF19500 and as specified herein. 4.2.1 G
28、roup E qualification. Group E qualification shall be performed herein for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were
29、not performed in the prior revision shall be performed on the first inspection lot to this revision to maintain qualification. 4.2.2 JANHC devices. Qualification for JANHC devices shall be in accordance with MILPRF19500. 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in acco
30、rdance with table EIV of MILPRF19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table EIV of MILPRF19500) Measurement JANS level JANTXV and JANTX levels 3a
31、 Condition C Condition C (1) 3b Surge, see 4.3.2 Surge, see 4.3.2 3c Thermal impedance, see 4.3.3 Thermal impedance, see 4.3.3 4 Not applicable Not applicable (2) 9 Reverse energy test (see 4.5.2), followed by VFM1and IRM1of table I, subgroup 2. Not applicable 10 Test method 1038 of MILSTD750, test
32、condition A; t = 48 hrs. Not applicable (2) 11 VFM1and IRM1of subgroup 2 of table I; VFM1= 0.05 V(pk), IRM1= 100 percent or 5 mA dc, whichever is greater. Reverse energy test (see 4.5.2), followed by VFM1and IRM1of subgroup 2 of table I . 12 Burn-in, method 1038 of MILSTD750, test condition A; see 4
33、.3.4. Burn-in, method 1038 of MILSTD750, test condition A; see 4.3.4. (3) 13 VFM1and IRM1of subgroup 2 of table I; VFM1= 0.05 V (pk), IRM1= 100 percent or 5 mA dc, whichever is greater. Scope display evaluation (see 4.5.3). VFM1and IRM1of subgroup 2 of table I; VFM1= 0.05 V (pk), IRM1= 100 percent o
34、r 5 mA dc, whichever is greater. Scope display evaluation (see 4.5.3). (1) Surge current shall precede thermal response. These tests shall be performed anytime after screen 3a and before screen 10. (2) IRM1shall not be indicative of an open condition. (3) All devices shall be subjected to the scope
35、display evaluation test, and reverse energy test. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/553E 6 4.3.1 Screening (JANHC). Screening of JANHC die shall be in accordance with MILPRF19500. 4.3.2 Surge current. Surge current shall be
36、performed in accordance with test method 4066 of MILSTD750, with the following conditions: IFSM= 600 A, 6 surges, tp= 8.3 ms, 1/2 sine wave, or rectangular pulse of equivalent IRMS, IO= 0, VRWM= 0, duty factor one percent minimum, TA= 25C. 4.3.3 Thermal impedance. Thermal impedance ZJCmeasurements s
37、hall be performed in accordance with test method 3101 of MILSTD750. Read and record data (ZJC) shall be supplied to the qualifying activity on one lot (random sample of 500 devices minimum) prior to shipment. Twenty-two samples shall be serialized and provided to the qualifying activity for test cor
38、relation. The following conditions shall apply: a. IH rated IO. b. tH= 150 to 400 ms. c. IM= 50 mA to 250 mA. d. tMD= 50 to 300 s. The maximum limit for ZJC under these test conditions is ZJC (max)= 2C/W. 4.3.4 Burn-in. Test method 1038 of MILSTD750, test condition A, TJ= 150C minimum, VR= 36 V dc,
39、t = 48 hrs. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MILPRF19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MILPRF19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance wi
40、th the conditions specified for subgroup testing in table EVIa (JANS) and table EVIb (JAN, JANTX, and JANTXV) of MILPRF19500, and as follows. Electrical measurements (end-points) shall be VFM1and IRM1of subgroup 2 of table I herein. 4.4.2.1 Product assurance level JANS (table EVIa of MILPRF19500). S
41、ubgroup Method Conditions B3 4066 IFSM= 600 A pk; tp= 8.3 ms; six surges; 1 surge/minute maximum; IO= 22.5 A; VR= rated (see 1.3); 100C TC 125C. TJ 150C B4 1037 2,000 cycles, 25 percent rated IO(see 4.5.6). B5 1027 IF= 20 A avg at TC= +130C, for 340 hours, f = 60 Hz, VR= VRWM (see figure 3). B6 4081
42、 RJC= 2.0C/W; tH 20 seconds; heating current (IH) rated IO; tMD 300 s; measurement current 50 mA IM 250 mA (see 4.5.4). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/553E 7 4.4.2.2 Product assurance levels JAN, JANTX, and JANTXV (table
43、EVIb of MILPRF19500). Subgroup Method Conditions B2 4066 IFSM= 600 A (pk); VRM= 45 V (pk), IO= 22.5 A dc; ten surges of 8.3 ms each at 1 minute intervals; 100C rated IO. b. tH= 20 seconds minimum. c. IM= 50 mA to 250 mA. d. tMD= 300 s maximum. 4.5.5 Reverse current at peak reverse voltage, alternate
44、 test. The reverse current at peak reverse voltage test requirement may be satisfied by performing the reverse energy test of 4.5.2 and measuring breakdown voltage to ensure VBR 54 V (pk) with IRM= 2.0 A (pk). 4.5.6 DC intermittent operation life. DC intermittent operation life shall be performed in
45、 accordance with test method 1037 of MILSTD750. A cycle shall consist of an “on“ period, when forward current is applied suddenly, not gradually, to the device for the time necessary to achieve an increase (delta) case temperature of +85C +15C, 5C followed by an “off“ period, when the current is sud
46、denly removed for cooling, the case through a similar delta temperature. Auxiliary (forced) cooling is permitted during the “off“ period only. Forward current or “on“ time, within specific limits, and “off“ time may be adjusted to achieve the delta case temperature. Heat sinks shall only be used if,
47、 and to the degree necessary, to maintain test samples within the desired delta temperature tolerance. The heating time shall be such that 30 s theating 180 s. The forward current may be steady-state dc, full-wave rectified dc, or the equivalent half-sine wave dc, of the specified value. The test du
48、ration shall be the specified number of cycles. Within the time interval of 50 cycles before and 500 cycles after the termination of the test, the sample units shall be removed from the specified test conditions and allowed to reach room ambient conditions. Specified end-point measurements for qualification and quality conformance inspections shall be completed within 96 hours after removal of sample units from the specified test conditions. Additional readings may be taken at the discretion of the manufacturer. 4.5.7 Inspection conditions. Unless
