1、 MIL-PRF-19500/594B 3 December 2010 SUPERSEDING MIL-PRF-19500/594A 3 July 1998 * PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS This spec
2、ification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a sili
3、con, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-257AA). 1.3 Maximum ratings (for each leg). Types VRand VRWMIO(1) TC= +100C IFSMTC= +100C tp= 8.3 ms trrTSTG and TOP1
4、N6664, 1N6664R 1N6665, 1N6665R 1N6666, 1N6666R V dc 100 150 200 A dc 10 10 10 A dc 50 50 50 ns 35 35 35 +200C to -65C (1) Derate linearly, 100 mA/C from +100C to +200C. Storage temperature: TSTG= -65C to +200C. Operating temperature: TJ= -65C to +200C. Barometric pressure reduced (altitude operation
5、): 8 mm Hg. RJC= 2.5C/W maximum. AMSC N/A FSC 5961 * METRIC The documentation and process conversion measures necessary to comply shall with this document shall be completed by 3 March 2011. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VA
6、C, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . Provided by IHSNot for ResaleNo reproduction or n
7、etworking permitted without license from IHS-,-,-MIL-PRF-19500/594B 2 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recom
8、mended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2
9、 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the solicitation or contract. DEP
10、ARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.
11、dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text
12、of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS * 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. * 3.2 Qualifi
13、cation. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbrevia
14、tions, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. Methods used for electrical isolation of the terminal feedthroughs shall emplo
15、y materials that contain a minimum of 90 percent AL2O3(ceramic). * 3.4.1 Lead finish. Lead finish shall be solderable in accordance in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking s
16、hall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3 and table I herein. * 3.7 Electrical test requirements. The electrical test requirements shall be as specified i
17、n table I herein. * 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license f
18、rom IHS-,-,-MIL-PRF-19500/594B 3 NOTES: 1. Dimensions are in millimeters. 2. Inch equivalents are given for general information only. 3. Glass meniscus included in dimension TL and BL. * 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Dimensions and configurat
19、ion (TO-257AA). Dimensions Ltr Millimeters Inches Min Max Min Max BL 10.41 10.92 .410 .430 CH 4.83 5.08 .190 .200 LD 0.64 0.89 .025 .035 LL 12.82 15.11 .505 .595 LO 3.05 BSC .120 BSC LS 2.54 BSC .100 BSC MHD 3.56 3.81 .140 .150 MHO 13.39 13.64 .527 .537 TL 16.38 16.89 .6450 .665 TT 0.89 1.14 .035 .0
20、45 TW 10.41 10.67 .410 .420 Term 1 See schematic Term 2 See schematic Term 3 See schematic Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/594B 4 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified h
21、erein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Construction verification. Cross sectional photos from three dev
22、ices shall be submitted in the qualification report. * 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II test
23、s, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500,
24、 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.2)
25、 Thermal impedance (see 4.3.2) 4 Y1at 10,000 G Not applicable 9 Not applicable Not applicable 11 Subgroup 2 of table I herein; VF2and IR1Subgroup 2 of table I herein; VF2and IR112 See 4.3.1, method 1038 of MIL-STD-750, test condition A, t = 96 hours See 4.3.1, method 1038 of MIL-STD-750, test condit
26、ion A, t = 48 hours 13 Subgroups 2 and 3 of table I herein; VF2= .05 V (pk); IR1= 150 nA dc or 100 percent of the initial value, whichever is greater Subgroup 2 of table I herein; VF2= .05 V (pk); IR1= 150 nA dc or 100 percent of the initial value, whichever is greater (1) Thermal impedance shall be
27、 performed any time after sealing provided. Temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal impedance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/594B 5 4.3.1 Burn-in conditions. Bu
28、rn-in conditions are as follows: TA= +150C; VR= 0.8 to 0.85 rated VRdc (see 1.3). * 4.3.2 Thermal impedance ZJXmeasurements for screening. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD 750 as applicable, using the guidelines in that method for determ
29、ining IM, IH, tH, and K factor where appropriate). Measurement delay time (tMD) = 70 s max. The thermal impedance limit used in screen 3c and table I, subgroup 2 shall be set statistically by the supplier. 4.3.2.1 Thermal impedance (ZJXmeasurements) for initial qualification or requalification. The
30、ZJX measurements shall be performed in accordance with method 3101 of MIL-STD-750, (read and record date ZJX). ZJXshall be supplied on one lot (500 pieces minimum and a thermal response curve shall be submitted. Twenty-two of these samples shall be serialized and provided to the qualifying activity
31、for correlation prior to shipment of parts. Measurements conditions shall be in accordance with 4.4.1. 4.3.3 Surge current. Surge current, see method 4066 of MIL-STD-750. IFSM= 50 A; 6 surges; tp= 8.3 ms or rectangular pulse of equivalent Irms; 3 surges. IO= 0 A; VRMS= 0 V; duty factor 1 percent min
32、imum TA= +25C. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. The following test conditions shall be used for Z
33、JX, group A inspection: ZJX 2.5C/W. a. IH= 5 A minimum. b. tH 100 ms. c. IM= 10 mA to 200 mA. d. tMD= 200 s maximum. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIa (JANS) and table E-VIb (JANTX and JAN
34、TXV) of MIL-PRF-19500. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions B3 4066 TC= +100C; tp 8.3 ms; VR= rated VR (see 1.3); s
35、ix 8.3 ms surges; 1 surge/minute maximum. IF (surge) = 50 A dc; IO= 10 A dc. B3 2037 Test condition D, all internal wires for each device shall be pulled separately. B4 1037 2,000 cycles, 25 percent rated IO IOapplied rated IO(see 4.5.2). B5 1027 IF 0.5 A dc at TA= +25C, for 96 hours, or adjusted as
36、 required by the chosen TAto give an average lot at TJ= +275C. B6 3101 See 4.4.1 except tH 500 ms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/594B 6 4.4.2.2 Group B inspection, table E-VIb (JANTX and JANTXV of MIL-PRF-19500). Subgr
37、oup Method Conditions B2 4066 TC= +100C; tp 8.3 ms; VR= rated VR(see 1.3); six 8.3 ms surges; 1 surge/minute maximum. IF (surge) = 50 A dc; IO= 10 A dc. B3 1037 IF 0.5 A dc, IO(see 4.5.2); 2,000 cycles. B4 Not applicable. B5 3101 See 4.4.1 except tH 500 ms. * 4.4.3 Group C inspection. Group C inspec
38、tion shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. 4.4.3.1 Group C inspection, table E-VII of MIL-P
39、RF-19500. Subgroup Method Conditions C2 2036 Test condition A, weight = 10 pounds, t = 15 seconds. C2 1021 Omit initial conditioning. C6 1037 IF 0.5 A dc, IO(see 4.5.2); 6,000 cycles. * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for su
40、bgroup testing in table E-IX of MIL-PRF-19500. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps and footnotes of table III herein, except ZJXis not required. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appr
41、opriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 DC intermittent operation life. A cycle shall consist of an “on“ period, when forward current is applied suddenly, not gradually, to the device for the t
42、ime necessary to achieve an increase (delta) case temperature of +85C +15C, -5C followed by an “off“ period, when the current is suddenly removed for cooling the case through a similar delta temperature. Auxiliary (forced) cooling is permitted during the “off“ period only. Either forward current or
43、“on“ time, within specific limits, and “off“ time may be adjusted to achieve the delta case temperature. Heat sinks shall only be used if, and to the degree necessary, to maintain test samples with the desired delta temperature tolerance. The heating time shall be such that 30 s theating 180 s. The
44、forward current may be steady-state dc, full-wave rectified dc, or the equivalent half-sine wave dc of the specified value. The test duration shall be the specified number of cycles. Within the time interval of 50 cycles before, and 500 cycles after, the termination of the test, the sample units sha
45、ll be removed from the specified test conditions and allowed to reach room ambient conditions. Specified end-point measurements for qualification and quality conformance inspections shall be completed within 96 hours after removal of sample units from the specified test conditions. Additional readin
46、gs may be taken at the discretion of the manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/594B 7 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and me
47、chanical examination 2071 Subgroup 2 Thermal impedance 3101 See 4.4.1 ZJX2.5 C/W Forward voltage 4011 tp 400 s, duty cycle 2 percent pulse IF= 6 A IF= 12 A VF1VF21.0 1.5 V dc V dc Reverse current leakage 4016 DC method; VR= rated VR(see 1.3) IR1250 nA dc Breakdown voltage 1N6664, 1N6664R 1N6665, 1N6
48、665R 1N6666, 1N6666R 4021 IR= 1.0 A dc V(BR)1 100 150 200 V dc V dc V dc Subgroup 3 High temperature operation: TA= +150C Reverse current leakage 4016 DC method; VR= rated VR(see 1.3) IR275 A dc Forward voltage 4011 | IFM= 6 A, duty cycle 2 percent (pulsed); tp 400 s VF30.95 V Low temperature operat
49、ion: TA= -55C Forward voltage 4011 IFM= 6 A, duty cycle 2 percent (pulsed); tp 400 s VF41.1 V Breakdown voltage 1N6664,1N6664R 1N6665,1N6665R 1N6666,1N6666R 4021 IR= 1.0 A dc V(BR)2 100 150 200 V dc V dc V dc See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,
