1、 MIL-PRF-19500/612D 28 October 2008 SUPERSEDING MIL-PRF-19500/612C 16 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER, TYPE 2N7372, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of
2、Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power switching applications. Four le
3、vels of product assurance are provided as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-254AA). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT(1) TA= +25C PT(2) TC= +25C RJARJCVCBOVCEOVEBOICIC(3) TJand TSTG2N7372 W 4 W 58 C/W 40 C/W 3 V dc 100 V dc 80 V dc
4、 5.5 A dc 5.0 A dc 10 C -65 to +200 (1) Derate linearly 22.8 mW/C for TA +25C. (2) Derate linearly 331 mW/C for TC +25C. (3) This value applies for PW 8.3 ms, duty cycle 1 percent. AMSC N/A FSC 5961INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply
5、Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. The documentation a
6、nd process conversion measures necessary to comply with this document shall be completed by 28 January 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/612D 2 1.4 Primary electrical characteristics. Unless otherwise specified, TC=
7、+25C. hFE2|hfe| VBE(SAT)2(1) VCE(SAT)2(1) Cobo VCE= 5.0 V dc IC= 2.5 A dc VCE= 5.0 V dc IC= 500 mA dc f = 10 MHz IC= 5.0 A dc IB= 500 mA dc IC= 5.0 A dc IB= 500 mA dc VCB= 10 V dc IE= 0 A dc 100kHz f 1MHz Reverse pulse (2) energy Safe operating area Min Max 70 200 7.0 V dc 2.2 V dc 1.5 pF 250 mJ 15
8、See figure 2 (1) Pulse (see 4.5.1) (2) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit of figure 3. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this s
9、pecification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requi
10、rements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unles
11、s otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies o
12、f these documents are available online at http:/assist.daps.dla.mil/quicksearch or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in t
13、he event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduct
14、ion or networking permitted without license from IHS-,-,-MIL-PRF-19500/612D 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Di
15、mensions and configuration (TO-254AA). Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.3
16、2 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Base Term 2 Collector Term 3 Emitter TO 254 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/612D 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specif
17、ied in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3
18、). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified on figure 1. Methods used for elect
19、rical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3(ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. 3.4.1 Lead finish and formation. Lead finish shall be solderable in accordance
20、with MIL-STD-750, MIL-PRF-19500, and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition requirements (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of MIL-
21、PRF-19500 and 100 percent dc testing in accordance with table I, subgroup 2 herein. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4,
22、and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability,
23、or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4 and table I). 4.2 Qualification inspection. Qualification inspect
24、ion shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the t
25、ests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/612D 5 * 4.3 Scre
26、ening ( JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see t
27、able E-IV Measurement of MIL-PRF-19500) JANS level JANTX and JANTXV levels 1/ 3c Thermal impedance (see 4.3.1) Thermal impedance (see 4.3.1) 9 ICES1and hFE2Not applicable 11 Subgroup 2 of table I herein; ICES1and hFE2; ICES1= 100 percent of initial value or 100 nA dc whichever is greater. hFE2= 20 p
28、ercent of initial value. ICES1and hFE212 See 4.3.2 t = 80 hours minimum See 4.3.2 13 Subgroups 2 and 3 of table I herein; ICES1and hFE2; ICES1= 100 percent of initial value or 100 nA dc, whichever is greater. hFE2= 20 percent of initial value. Subgroup 2 of table I herein; ICES1and hFE2; ICES1= 100
29、percent of initial value or 100 nA dc, whichever is greater. hFE2= 20 percent of initial value. (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. * 4.3.1Thermal impedance. The thermal impedance measurements shall be perfo
30、rmed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follow
31、s: TJ= 187.5 12.5C, VCE= 30 V dc 10 V dc, TA= room ambient as defined in the general requirements, 4.5 of MIL-STD-750. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducte
32、d in accordance with table E-V of MIL-PRF-19500, and table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/612D 6 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
33、subgroup testing in tables E-VIa (JANS) and E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end points) shall be in accordance with table I, subgroup 2 herein except ZJXshall be performed after subgroup 2 and 3) only. 4.4.2.1 Group B inspection table E-VIa (JANS) of MIL-PRF
34、-19500. Subgroup Method Condition * B3 2037 Test condition D. B4 1037 VCB= 10 V dc minimum, 2,000 cycles. B5 1027 See 4.5.2. 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 VCB= 10 V dc minimum, 2,000 cycles. * 4.4.3 Group C inspec
35、tion. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Tension: test condition A; weig
36、ht 10 pounds 5 ounces; time 15 seconds. Bend strength: test condition F; bending stress 2 pounds, time 15 seconds. C5 3131 See 4.5.4, RJC= 3.0C/W. C6 1037 VCB= 10 V dc minimum, 6,000 cycles. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified f
37、or subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 P
38、ulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Group B accelerated life test. This test shall be conducted using one of the two options listed below with the following conditions applying to all options: VCB= 20 V minimum dc; TJ= +275C. a
39、. PT= 2.5; PTadjusted to give a lot average of TJ= +275C with TA= +125C 25C. b. TA= +25C 3C with PTadjusted to give a lot average of TJ= +275C. 4.5.3 Inspection conditions. Unless otherwise specified in MIL-PRF-19500 or herein, all inspections shall be conducted at a case temperature (TC) of +25C 3C
40、. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/612D 7 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance
41、2/ 3131 See 4.3.1 ZJCC/W Collector to emitter breakdown voltage 3011 Bias condition D; IC= 100 mA dc; IB= 0; Pulsed (see. 4.5.1) V(BR)CEO80 V dc Collector to emitter cutoff current 3041 Bias condition C; VCE= 60 V dc; VBE= 0 ICES11.0 A dc Collector to emitter cutoff current 3041 Bias condition C; VC
42、E= 100 V dc; VBE= 0 ICES21.0 mA dc Collector to emitter cutoff current 3041 Bias condition D;VCE= 40 V dc; IB= 0 ICEO50 A dc Emitter to base cutoff current 3061 Bias condition D;VEB= 4 dc; IC= 0 IEBO11.0 A dc Emitter to base cutoff current 3061 Bias condition D; VEB= 5.5 dc; IC= 0 IEBO21.0 mA dc For
43、ward-current transfer ratio 3076 VCE= 5.0 V dc; IC= 50 mA dc; pulsed (see 4.5.1) hFE150 Forward-current transfer ratio 3076 VCE= 5.0 V dc; IC= 2.5 A dc; pulsed (see 4.5.1) hFE270 200 Forward-current transfer ratio 3076 VCE= 5.0 V dc; IC= 5.0 A dc; pulsed (see 4.5.1) hFE340 Base to emitter non-satura
44、ted voltage 3066 Test condition B; VCE= 5.0 V dc, IC= 2.5 A dc, Pulsed (see 4.5.1) VBE1.45 V dc Base to emitter saturated voltage 3066 Test condition A; IC= 2.5 A dc IB= 250 mA dc, pulsed (see 4.5.1) VBE(SAT)11.45 V dc See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or net
45、working permitted without license from IHS-,-,-MIL-PRF-19500/612D 8 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 2 - Continued Base to emitter saturated voltage 3066 Test condition A; IC= 5.0 A dc, IB= 500 mA dc; Pulsed (see
46、 4.5.1) VBE(SAT)22.2 V dc Collector to emitter saturated voltage 3071 IC= 2.5 A dc; IB= 250 mA dc; pulsed (see 4.5.1) VCE(sat)10.75 V dc Collector to emitter saturated voltage 3071 IC= 5.0 A dc; IB= 500 mA dc; pulsed (see 4.5.1) VCE(sat)21.5 V dc Subgroup 3 High-temperature operation: TA= +150C Coll
47、ector to emitter cutoff current 3041 Bias condition A; VCE= 60 V dc; VBE(OFF)= +2 V dc ICEX500 A dc Low-temperature operation: TA= -55C Forward-current transfer ratio 3076 VCE= 5.0 V dc; IC= 2.5 A dc; IC= 2.5 A dc hFE425 Subgroup 4 Common-emitter, small-signal short- circuit forward-current transfer
48、 ratio 3206 VCE= 5 V dc; IC= 100 mA dc; f = 1 kHz hfe50 Magnitude of common emitter small-signal short-circuit forward- current transfer ratio 3206 VCE= 5 V dc; IC= 500 mA dc; f = 10 MHz |hfe| 7 Open circuit output capacitance 3236 VCB= 10 V dc; IE= 0; 100 kHz f 1 MHz Cobo250 pF Switching time IC= 5 A dc; IB1= 500 mA dc ton0.5 s B2= -500 mA dc ts1.4 s VBE(off)= 3.7 V dc tf0.5 s RL= 6 ; (see figure 4) toff 1.5 s See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/612D 9 TABLE I. Group A
