1、MIL-PRF-19500/656A INCH-POUND 4 June 2008 SUPERSEDING The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 September 2008.MIL-PRF-19500/656 16 August 2001 * PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER REC
2、TIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6785 AND 1N6785R, JAN, JANTX, JANTXV AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specificat
3、ion sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a silicon, Schottky, power rectifier diode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-257AA).
4、* 1.3 Maximum ratings. Unless otherwise specified TA= +25C. IO(1) (2) (3) RJC(1) RJA(1) Type VR(1) VRWM(1) TJ= TC= +100C IFSM(1) TC= +25C tp= 8.3 ms CJat 5 V (1) C/W C/W TSTGand TJ1N6785, 1N6785R V45 V45 A dc15 A(pk)150 pF2,000 1.65 40 C-65 to +150 (1) Each individual diode. (2) Derate linearly at 3
5、00 mA/C from TJ= TC= +100C to +150C; 300 mA/C times 50C = 15 A, the device rating. (3) Total package current is limited to 30 A dc. * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, o
6、r emailed to semiconductordscc.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil . AMSC N/A FSC 5961 Provided by IHSNot for ResaleNo reproduction or networking permitted withou
7、t license from IHS-,-,-MIL-PRF-19500/656A 2Dimensions Ltr Inches Millimeters Min Max Min Max BL .410 .430 10.41 10.92 CH .190 .200 4.83 5.08 LD .025 .040 0.64 1.02 LL .500 .750 12.7 19.05 LO .120 3.05 LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.38 13.64 TL .645 .665 16.38 16.89 TT
8、.035 .045 0.889 1.14 TW .410 .420 10.41 10.67 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. TO-257 1 1N6785 3 1 1N6785R 3 * FIGURE 1. Phys
9、ical dimensions and configuration (TO-257AA). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/656A 32. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification.
10、This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of doc
11、uments cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise
12、specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these do
13、cuments are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the even
14、t of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS * 3.1 General. The individual it
15、em requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML
16、) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and
17、on figure 1 (TO-257AA) herein. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3(ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages 3.4.1 Lead finish and forma
18、tion. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition requirements (see 6.2). 3.4.2 Polarity. Polarity and terminal configuration shall be in accordance with figure 1
19、 herein. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. * 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requir
20、ements shall be group A as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/656A 43.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defec
21、ts that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4, and tables I, II, and
22、 III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accord
23、ance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurement Screen (see table E-IV of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Method 3101 (see 4.3.2), peak reverse energy test (see 4.3.3) Method 3101 (see 4.3.2), peak reverse energ
24、y test (see 4.3.3) 9 and 10 Not applicable Not applicable 11 VF2and IR1VF2and IR112 See 4.3.1, t = 240 hours See 4.3.1, t = 48 hours 13 Subgroups 2 and 3 of table herein; VF2= 50 mV; IR1= 100 percent of initial value or 250 A dc, whichever is greater. Subgroup 2 of table herein; VF2= 50 mV; IR1= 100
25、 percent of initial value or 250 A dc, whichever is greater. (1) Shall be performed anytime after screen 3. 4.3.1 Power burn-in conditions. Burn-in conditions are as follows: Method 1038 of MIL-STD-750, test condition A. TC= +125C; VR= 36 V dc. Provided by IHSNot for ResaleNo reproduction or network
26、ing permitted without license from IHS-,-,-MIL-PRF-19500/656A 54.3.2 Thermal impedance ZJXmeasurements for screening. The ZJXmeasurements shall be performed in accordance with method 3101 of MIL-STD-750. Test each die separately. The maximum limit and conditions for ZJXin screening (table E-IV of MI
27、L-PRF-19500) shall be derived by each vendor by means of process control of actual measurements which characterizes the die attach process. When three lot date codes have exhibited control, the data from these three lots will be used to establish a fixed screening limit (not to exceed the group A li
28、mit). Once a fixed limit has been established, monitor all future sealing lots using a sample from each lot to be plotted on the applicable statistical process chart. 4.3.2.1 Thermal impedance (ZJXmeasurements) for initial qualification or requalification. The ZJXmeasurements shall be performed in a
29、ccordance with MIL-STD-750. Method 3101 (read and record date ZJX) derived conditions limits and thermal response curve shall be supplied to the qualifying activity on the qualification lot prior to qualification approval. * 4.3.3 Peak reverse energy test. The peak reverse energy test is to be perfo
30、rmed using the circuit as shown on figure 2 or equivalent. The Schottky rectifier under test must be capable of absorbing the reverse energy, as follows: IRM= 2 A minimum, VRSM= 45 V dc minimum, L = 260 H. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 a
31、nd as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. The following t
32、est conditions shall be used for ZJX, group A inspection: a. IMmeasure current - - - - - - - - - -10 mA. b. IHforward heating current - - - - - 15 - 50 A. c. tMheating time - - - - - - - - - - - - - 50 ms. d. tMSmeasurement delay time - - - 100 s minimum. The maximum limit for ZJXunder these test co
33、nditions are ZJX(max) = 1.55C/W. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIa (JANS) and E-VIb (JANTX and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) and delta requir
34、ements shall be in accordance with the applicable steps of table III herein. 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. a. Subgroup 4: Condition for intermittent operation life for each diode are as follows: IFor IO= 2 A (minimum); TJ 85C, +15C, -5C for 2,000 cycles minimum. b.
35、 Subgroups 5: Condition for steady-state operation life (accelerated) is as follows: Method 1038, condition A, TJ= TC= +150C, VR= 36 V dc. c. Subgroup 6: Limit for thermal resistance is RJC= 1.65C/W maximum for each die. Provided by IHSNot for ResaleNo reproduction or networking permitted without li
36、cense from IHS-,-,-MIL-PRF-19500/656A 64.4.2.2 Group B inspection, table E-VIb (JANTX and JANTXV) of MIL-PRF-19500. Subgroup 3: Condition for intermittent operation life for each diode are as follows: IFor IO= 2 A (minimum); TJ 85C, +15C, -5C for 2,000 cycles minimum. 4.4.3 Group C inspection. Group
37、 C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end points) and delta requirements shall be in accordance with the applicable steps of table III herein. 4.4.3.1 Group C inspect
38、ion, table E-VII of MIL-PRF-19500. a. Subgroup 2: Condition for terminal strength are as follows: Tension: Test condition A, weight = 10 lbs, t = 15 seconds. b. Subgroup 3: Condition for constant acceleration are as follows: X1, Y1, Z1, and Z2axis. c. Subgroup 6: IFor IO= 2 A (minimum); TJ 85C, +15C
39、, -5C for 6,000 cycles minimum. 4.5 Methods of inspection. Methods of inspection shall be as specified in appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance sha
40、ll be measured as follows in accordance with method 3101 or 5081of MIL-STD-750. Each diode leg shall be measured. a. IH- - - - -15 - 50 A. b. IM- - - - - 10 mA. c. RJC- - - 1.65C/W. d. tMd- - - - 100 s maximum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from
41、 IHS-,-,-MIL-PRF-19500/656A 7TABLE I. Group A inspection. MIL-STD-750 Limit Inspection 1/ 2/ 3/ Method Conditions Symbol Min Max Unit Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Thermal impedance 3101 See 4.3.2 ZJX1.55 C/WForward voltage 4011 IF= 5 A (pk) pulsed (see 4.5.1) VF10.55 V
42、 dc IF= 15 A (pk) pulsed (see 4.5.1) VF20.75 V dc IF= 30 A (pk) pulsed (see 4.5.1) VF31.0 V dc Reverse current 4016 DC method, VR= 45 V dc, (see 4.5.1) IR11.0 mA dcSubgroup 3 High temperature operation: TA= +125C Reverse current leakage 4016 DC method, pulsed (see 4.5.1) VR= 45 V (pk) IR240 mA dcLow
43、 temperature operation: TA = -55C Forward voltage 4011 Pulsed (see 4.5.1), IF= 15 A (pk) VF40.8 V dc Subgroup 4 Junction capacitance 4001 VR= 5 V dc; f = 1 MHz, VSIG= 50 mV (p-p) (max) CJ2,000 pF Subgroup 5 Dielectric withstanding voltage 1016 VR= 500 V dc; all leads shorted; V measure from leads to
44、 case; sample is n = 116, c = 0 DWV 10 A Subgroup 6 and 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 2/ Each individual diode. 3/ If 4.3.2 test conditions are performed in 100 percent screening, this test need not be performed in group A. Provided by IHSNot for ResaleNo reproduction or
45、networking permitted without license from IHS-,-,-MIL-PRF-19500/656A 8* TABLE II. Group E inspection (all quality levels) for qualification only. Inspection MIL-STD-750 Qualification inspection Method Conditions Subgroup 1 Thermal shock (temperature cycling) 1051 500 cycles 38 devices, c = 0 Hermeti
46、c seal 1071 Electrical measurements See table III, steps 1, 2, and 5 Subgroup 2 38 devices, c = 0 Steady-state blocking life 1048 t = 1,000 hours, TC= +125C; VR= 36 Electrical measurements See table III, steps 1 and 2 Subgroup 3 Not applicable Subgroup 4 10 devices, c = 0 Thermal resistance 3101 See
47、 4.5.2, RJC= 1.65C/W Subgroup 5 1/ 22 devices, c = 0 Surge 4066 Condition B; TA= +25C; IFSM= 300 A, 100 surges Electrical measurements See table III, steps 1 and 2. 1/ For each diode. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/656A
48、 9TABLE III. Groups A, B, C, and E electrical end-point measurements. 1/ 2/ 3/ 4/ Step Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max 1. Forward voltage 4011 IF= 15 A (pk), pulsed (see 4.5.1) VF20.75 V dc 2. Reverse current leakage 4016 VR= 45 V dc, pulsed (see 4.5.1) DC method IR11.0 mA dc 3. Forward voltage 4011 IF= 15 A (pk), pulsed (see 4.5.1) VF250 mV dc from initial reading. 4. Reverse current 4016 VR= 45 V dc, pulsed (see 4.5.1) DC method IR1250 A dc or 100 percent from initial reading, whichever is greater. 5. Thermal impedance 3101 See 4.3.2 Z
