1、 MIL-PRF-19500/675E 25 March 2013 SUPERSEDING MIL-PRF-19500/675D 12 March 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2, 2N7464T2, 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR This specification is approved for
2、use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode,
3、MOSFET, radiation hardened power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). 1.2 Physical dimensions. See figure 1 (TO-205AF, T2 suffix) and figure 2 (LCC,
4、 U5 suffix). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT(1) TC= +25C PTTA= +25C (free air) RJC(2) VDSVDGVGSID1(3) (4) TC= +25C ID2(3) (4) TC= +100C ISIDM(5) TJand TSTG2N7463T2, 2N7463U5 2N7464T2, 2N7464U5 W 25 25 W 0.8 0.8 C/W 5.0 5.0 V dc 400 500 V dc 400 500 V dc 20 20 A dc
5、2.9 2.5 A dc 1.9 1.6 A dc 3.0 2.5 A(pk) 12 10 C -55 to +150 (1) Derate linearly 0.2 W/C for TC +25C. (2) See figure 3, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis also limited by package and device construction. (4) See figure 4, maximum drain cu
6、rrent graphs. (5) IDM= 4 X ID1, as defined in note (3). AMSC N/A FSC 5961 INCH-POUND )TatR)x(R(T-T=IJmaxDSJCCJDonmax* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.m
7、il. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 June 2012. Provided
8、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/675E 2 Dimensions Ltr Inches Millimeters Min Max Min Max CD .315 .355 8.00 9.02 CH .160 .180 4.06 4.57 HD .340 .370 8.64 9.40 LC .200 BSC 5.08 BSC LD .016 .021 0.41 0.53 LL .500 .750 12.70 19.05 LU
9、 .016 .019 0.41 0.48 L1 .050 1.27 L2 .250 6.35 P .070 1.78 Q .050 1.27 r .009 .041 0.23 1.04 TL .029 .045 0.74 1.14 TW .028 .034 0.71 0.86 a 45 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Lead number 1 is the source, lead number 2 is the gate, lead n
10、umber 4 is omitted from this outline. The drain is number 3 and is electrically connected to the case. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for TO-205AF (2N7463T2 and 2N7464T2). Provided by IHSNot for ResaleNo reproduction or netwo
11、rking permitted without license from IHS-,-,-MIL-PRF-19500/675E 3 Dimensions Sym. Inches Millimeters Min Max Min Max BL .345 .360 8.77 9.14 BW .280 .295 7.11 7.49 CH .095 .115 2.41 2.92 LL1 .040 .055 1.02 1.40 LL2 .055 .065 1.40 1.65 LS .050 BSC 1.27 BSC LS1 .025 BSC 0.635 BSC LS2 .008 BSC 0.203 BSC
12、 LW .020 .030 0.51 0.76 Q1 .105 REF 2.67 REF Q2 .120 REF 3.05 REF Q3 .045 .055 1.14 1.40 TL .070 .080 1.78 2.03 TW .120 .130 3.05 3.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology
13、. FIGURE 2. Physical dimensions for LCC (2N7463U5 and 2N7464U5). 181Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/675E 4 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 VGS(TH)VDS VGSID= 1.0 Max IDSS1VGS= 0
14、 VDS= 80 Max rDS(ON)(1) VGS= 12 V dc EASat ID1IASVISO 70,000 ID= 1.0 mA dc mA dc percent of rated VDSTJ= +25C at ID2TJ= +150C at ID2foot altitude V dc V dc A dc ohm ohm mJ A V dc Min Max 2N7463T2, 2N7463U5 2N7464T2, 2N7464U5 400 500 2.5 2.5 4.5 4.5 50 50 1.39 1.77 3.0 3.9 140 154 3.0 2.5 400 500 (1)
15、 Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. W
16、hile every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standa
17、rds, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semi
18、conductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.mil/quicksearch/or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbin
19、s Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, howeve
20、r, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/675E 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in M
21、IL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3).
22、 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IASRated avalanche current, non-repetitive. nC . nano Coulomb. 3.4 Interface and physical dimensions. The interface and physical dimensions shall b
23、e as specified in MIL-PRF-19500 and on figures 1 (TO-205AF, T2 suffix) and 2 (LCC, U5 suffix) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition docum
24、ent (see 6.2). 3.4.2 Internal construction. Multiple chip construction is not permitted to meet the requirements of this specification. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. MOS devices must be ha
25、ndled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c.
26、Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated vo
27、ltage to any lead. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 El
28、ectrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects t
29、hat will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/675E 6 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qu
30、alification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be perfor
31、med for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the fi
32、rst inspection lot of this revision to maintain qualification. * 4.2.1.1 SEE. SEE shall be performed at initial qualification and after process or design changes which may affect radiation hardness (see table III and table IV). Upon qualification, manufacturers shall provide the verification test co
33、nditions from section 5 of method 1080 of MIL-STD-750 that were used to qualify the device for inclusion into section 6 of the slash sheet. End-point measurements shall be in accordance with table II. SEE characterization data shall be made available upon request of the qualifying or acquiring activ
34、ity. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/675E 7 * 4.3 Screening (JANS and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be ma
35、de in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see Measurement table E-IV of MIL-PRF-19500) (1) (2) JANS level JANTXV level (3) Method 3470 of MIL-STD-750, EAS(see 4.3.1) Method 3470 of MIL-STD-750, EAS(see 4.3.1) (3) Gate stre
36、ss test (see 4.3.3) Gate stress test (see 4.3.3) (3) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.2) Method 3161 of MIL-STD-750, thermal impedance (see 4.3.2) (3) 9 Subgroup 2 of table I herein; IGSSF1, IGSSR1, IDSS1 Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method
37、1042 of MIL-STD-750, test condition B 11 Subgroup 2 of table I herein; IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)1 IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial val
38、ue, whichever is greater. Subgroup 2 of table I herein; IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)112 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater.
39、 IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value VGS(TH)1= 20 percent of initial value Subgroup 2 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, w
40、hichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value VGS(TH)1= 20 percent of initial value (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1
41、are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. * (3) Shall be performed anytime after temperature cycling, screen 3a; JANTXV level does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or
42、networking permitted without license from IHS-,-,-MIL-PRF-19500/675E 8 4.3.1 Single pulse avalanche energy (EAS). a. Peak current (IAS) IAS(max). b. Peak gate voltage (VGS) 12 V. c. Gate to source resistor (RGS) 25 RGS 200. d. Initial case temperature (TC) +25C +10C, -5C. e. Inductance (L) . ( )212E
43、IV VVASDBR DDBRmH minimum. f. Number of pulses to be applied 1 pulse minimum. g. Supply voltage (VDD) . 50 V. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, t
44、SW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.3.3 Gate stress test. Apply VGS= 30 V minimum for t = 250 s minimum. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified her
45、ein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accor
46、dance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted
47、without license from IHS-,-,-MIL-PRF-19500/675E 9 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B3 2075 See 3.4.2. B3 2077 Scanning electron microscope (SEM) qualification may be performed anytime prior to lot formati
48、on. B4 1042 Test condition D, 2,000 cycles. No heat sink nor forced-air cooling on the device shall be permitted during the on cycle. The heating cycle shall be 30 seconds minimum. B5 1042 Test condition B, VGS= rated TA= +175C, t = 24 hours. B5 1042 Test condition A, VDS= rated; TA= +175C; t = 120 hours. B5 2037 Bond strength; test condition D. 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles. (45 total, including 20 cycles performed in screening) B3 1042 Test condition D, 2,000
