1、 MIL-PRF-19500/687C 18 December 2013 SUPERSEDING MIL-PRF-19500/687B 3 October 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R This specification is approved for use b
2、y all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET,
3、radiation hardened (total dose and single event effects (SEE) characterization), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, (TO
4、-254). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(1) TC= +25C VDSVDGVGSRJCmax ID1(2) (3) TC=+25C ID2 (2) (3) TC= +100C IS IDMTJ and TSTGVISO 70,000 ft. altitude 2N7509 2N7510 2N7511 W 192 192 192 V dc 100 200 250 V dc 100 200 250 V dc +30 +30 +30 C/W 0.65 A dc 70 53 42 A dc 5
5、5 34 27 A dc 70 53 42 A (pk) 200 200 160 C -55 to +150 V dc N/A N/A 250 (1) Derate linearly 1.54 W/C for TC +25C. (2) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal wires and may be limited by pin diameter: (3) See figure 2, maximum drain current
6、graph. AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMD* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change,
7、you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. The documentation and process conversion measures necessary to comply with this document shall be completed by 18 February 2014. Provided by IHSNot for ResaleNo reproduction or
8、networking permitted without license from IHS-,-,-MIL-PRF-19500/687C 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= 1.0 mA dc VGS(TH)1VDS= VGSID= 1.0 mA dc Max IDSS1VGS= 0 VGS= 80% of rated VDSMax rDS(on) (1) VGS= 12V IASTJ= 25C at ID2TJ= 125C at ID2V dc V dc Min M
9、ax A dc A (pk) 2N7509 2N7510 2N7511 100 200 250 2.0 4.5 25 0.0115 0.034 0.049 0.021 0.065 0.096 170 110 85 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include docum
10、ents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5
11、 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these docume
12、nts are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:
13、/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this docu
14、ment takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/687C 3 NOTES: 1. Dimensions are in inche
15、s. 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. Die to base is BeO isolated, terminals to case ceramic (AL2O3) isolated. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for TO-254. Dimensi
16、ons Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13
17、.84 Term 1 Drain Term 2 Source Term 3 Gate Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/687C 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualifica
18、tion. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviati
19、ons, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IASRated avalanche current, non-repetitive. nC nano coulomb. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figure 1 (TO-254AA) h
20、erein. Methods used for electrical isolation of the terminals shall employ materials that contain a minimum of 90 percent Al2O3(ceramic). 3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead f
21、inish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3,
22、1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.8.1 Handling. MOS devices must be handled with certai
23、n precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended. a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools and personnel handling devices. c. Do not handle devices by the
24、 leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate mu
25、st be terminated to source, R or 100 k ohms, whenever bias voltage is applied drain to source. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by
26、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/687C 5 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Con
27、formance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for qualification inspection in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be perfo
28、rmed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the f
29、irst inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/687C 6 * 4.3 Screening (JANS and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and
30、 as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) (1) (2) Measurement JANS JANTXV (3) Gate stress test (see 4.3.1) Gate stress test (see
31、4.3.1) (3) Method 3470 of MIL-STD-750, (see 4.3.2) Method 3470 of MIL-STD-750, (see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, (see 4.3.3) Method 3161 of MIL-STD-750, (see 4.3.3) 7 Optional. Optional. 9 IGSSF1, IGSSR1, IDSS1subgroup 2 of table I herein IGSSF1, IGSSR1, IDSS1subgroup 2 of table I herei
32、n 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1Subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichev
33、er is greater. IDSS1 = 25 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A, 240 hours minimum. Method 1042 of MIL-STD-750, test condition A, 160 hours minimum. 13 Subgrou
34、ps 2 and 3 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 25A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 p
35、ercent of initial value. Subgroup 2 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 25A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initi
36、al value. VGS(TH)1 = 20 percent of initial value. 14 Required. Required. 17 For TO-254 packages: Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. For TO-254 packages: Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. (1) At the end of th
37、e test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirement. *
38、 * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/687C 7 4.3.1 Gate stress test. Apply VGS= 45 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. IASshall be as specified in 1.4 herein. b. L = 0.1 mH. c. Gat
39、e to source resistor (25 ohms RGS 200 ohms). d. EAS= 1/2 LIAS2. e. VDD= 50 V to 150 V dc. f. Initial junction temperature = +25C, -5C, +10C. 4.3.3 Thermal impedance (VSDmeasurement). The delta VSDmeasurement shall be performed in accordance with method 3161 of MIL-STD-750. The delta VSDconditions (I
40、Hand VH) and maximum limit shall be derived by each vendor from the thermal response curves (see figure 3) and shall be specified in the certificate of conformance prior to qualification. The following parameter measurements shall apply: a. Measuring current (IM).10 mA. b. Heating time (tH)100 ms. c
41、. Measurement time delay (tMD).30 - 60 s. d. Sample window time (tSW)10 s maximum. * 4.3.4 Dielectric withstanding voltage. a. Magnitude of test voltage.900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of test voltage.All leads to case (bunch connection)
42、. d. Method of connection.Mechanical. e. Kilovolt-ampere rating of high voltage source.1,200 V/1.0 mA (min). f. Maximum leakage current1.0 mA. g. Voltage ramp up time.500 V/second. 4.4 Conformance. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for confor
43、mance inspection in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/687C 8
44、4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIa (JANS) and in table E-VIb (JANTXV) of MIL-PRF-19500, and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table
45、1, subgroup 2 herein. Delta VSDmeasurements shall be in accordance with table IV herein. * 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition F or G, 100 cycles. B4 1042 Intermittent operation life, condition D. No heat sink or forced-ai
46、r cooling on the device shall be permitted during the on cycle; ton = 30 seconds minimum. B5 1042 Accelerated steady-state reverse bias, condition A. B5 1042 Accelerated steady-state gate bias, condition B. B6 3161 Thermal resistance, see 4.5.2. * 4.4.2.2 Group B inspection, table E-VIb (JANTXV) of
47、MIL-PRF-19500. Subgroup Method Condition B3 1042 Intermittent operation life, condition D. No heat sink or forced-air cooling on the device shall be permitted during the on cycle; ton = 30 seconds minimum. B5 3161 Thermal resistance, see 4.5.2. * 4.4.3 Group C inspection. Group C inspection shall be
48、 conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table IV herein. Subgroup Method Condition C2 2036 Terminal strength, test condition A, weight = 10 pounds, t = 15 seconds. C5 3161 See 4.5.2. C6 1042 Intermittent operation life, condition D. No heat sink or forced-air cooling on the device shall be permitted during the on cycle; ton = 30 seconds minimum. 4.4.4 Group D inspection.
