1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change paragraph 3.2.3. Remove radiation test circuit. rrp 00-10-13 R. MONNIN B Drawing updated to reflect current requirements. gt 02-05-10 R. MONNIN C Add case outline H. Make changes to 1.2.4, 1.3, and figure 1. - ro 03-03-07 R. MONNIN D Add R
2、HA designator “L” devices. Make changes to 1.5 and footnote 2 under Table I. Delete 4.4.4.1.1 and 4.4.4.2. - ro 05-11-30 R. MONNIN E Add device type 02 tested at Low Dose Rate. Add RHA designator “R” requirements. Make changes to 1.2.2, 1.5, Table I, figure 1, Table IIB, and 4.4.4.1. - ro 08-06-24 R
3、. HEBER F Add paragraph 3.1.1 and Appendix A for microcircuit die. Delete device class M references. Delete the words, “Radiation hardened” from the title block. - ro 13-12-16 C. SAFFLE REV SHEET REV F F F F F F SHEET 15 16 17 18 19 20 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3
4、 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPR
5、OVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, PRECISION VOLTAGE COMPARATOR / BUFFER, MONOLITHIC SILICON DRAWING APPROVAL DATE 00-05-11 AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-00524 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E036-14 Provided by IHSNot for ResaleNo reproduction or networkin
6、g permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00524 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device
7、 class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the fo
8、llowing example: 5962 L 00524 01 V G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MI
9、L-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LM111 Radiation hardened precision voltage com
10、parator / buffer 02 LM111 Low dose rate radiation hardened precision voltage comparator / buffer 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and q
11、ualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can H GDFP1-F10 or CDFP2-F10 10 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line Z GDFP1-G10 10 Flat pa
12、ck with gull wing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00524 DLA LAND AND MARITIME COLUMBUS, OH
13、IO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Positive supply voltage (+VCC) +30.0 V Negative supply voltage (-VCC) . -30.0 V Total supply voltage (+VCCto -VCC) . 36.0 V Output to negative supply voltage 50.0 V GND to negative supply voltage 30 V Diffe
14、rential input voltage 30.0 V Sink current . 50 mA Input voltage (VIN) . 15 V 2/ Maximum strobe current 10 mA Voltage at STROBE pin . VCC 5 V Power dissipation (PD): 3/ Cases G, H, and Z . 330 mW at TA= +25C Case P . 400 mW at TA= +25C Output short circuit duration . 10 seconds Storage temperature ra
15、nge -65C TA +150C Junction temperature (TJ) +175C Lead temperature (soldering, 60 seconds) +300C Thermal resistance, junction-to-case (JC): Case G . 50C/W Cases H and Z . 24C/W Case P . 21C/W Thermal resistance, junction-to-ambient (JA): Case G . 162C/W (still air at 0.5 W) 92C/W (500 linear feet pe
16、r minute air flow at 0.5 W) Cases H and Z . 231C/W 153C/W (500 linear feet per minute air flow at 0.5 W) Case P . 134C/W 76C/W (500 linear feet per minute air flow at 0.5 W) 1.4 Recommended operating conditions. Supply voltage (VCC) . 15 V Ambient operating temperature range (TA) -55C TA +125C _ 1/
17、Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ This rating applies to VCC= 15 V supplies. The positive input voltage limit is 30 V above the negative supply. The negative
18、 input voltage limit is equal to the negative supply voltage or 30 V below the positive supply, whichever is less. 3/ The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmaximum, JAmaximum, and TA. The maximum allowable power dissipation at any temperature is
19、PDmax = (TJmax TA) / JAor the number given in the absolute maximum ratings, whichever is lower. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00524 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION L
20、EVEL F SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features. 4/ 5/ Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device type 01: RHA designator L . 50 krads(Si) Maximum total dose available (dose rate = 10 mrads(Si)/s): Device type 02: RHA designator R . 100 krads(Si) The manufacture
21、r supplying device type 02 RHA parts on this drawing has performed a characterization test to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 method 1019 paragraph 3.13.1.1. Therefore this part may be considered ELDRS free. However, the m
22、anufacturer will continue to perform low dose rate lot acceptance testing on each wafer lot or wafer until characterization testing has been performed according to test method 1019 of MIL-STD-883. Since the redesigned part did not demonstrate ELDRS per Method 1019 and the previously tested device ty
23、pe 01 was not tested for ELDRS, device type 02 will be added to distinguish it from the 01 device type. 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Un
24、less otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits
25、. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Stand
26、ardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersede
27、s applicable laws and regulations unless a specific exemption has been obtained. _ 4/ For device type 01, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the co
28、nditions as specified in MIL-STD-883, method 1019, condition A. 5/ For device type 02, this part has been tested and does not demonstrate low dose rate sensitivity. These parts may be sensitive in a high dose environment. Radiation end point limits for the noted parameters are guaranteed for the con
29、ditions specified in MIL-STD-883, method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00524 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97
30、 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit,
31、or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classe
32、s Q and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
33、revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits
34、 are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall
35、 be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this
36、option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance.
37、For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supp
38、ly for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of mic
39、rocircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00524 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical p
40、erformance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Input offset voltage VIOVIN= 0 V, RS= 50 1 All -3.0 +3.0 mV 2,3 -4.0 +4.0 +VCC= 29.5 V, VIN= 0 V, -VCC= -0.5 V, RS= 50 , 1 -3.0 +3.0 VCM= -14.5 V 2,3
41、 -4.0 +4.0 +VCC= 2 V, VIN= 0 V, -VCC= -28 V, RS= 50 , 1 -3.0 +3.0 VCM= +13 V 2,3 -4.0 +4.0 +VCC= +2.5 V, VIN= 0 V, 1 -3.0 +3.0 -VCC= -2.5 V, RS= 50 2,3 -4.0 +4.0 Raised input offset voltage VIO(R)VIN= 0 V, RS= 50 1 All -3.0 +3.0 mV 2,3 -4.5 +4.5 +VCC= 29.5 V, VIN= 0 V, -VCC= -0.5 V, RS= 50 , 1 -3.0
42、+3.0 VCM= -14.5 V 2,3 -4.5 +4.5 +VCC= 2 V, VIN= 0 V, -VCC= -28 V, RS= 50 , 1 -3.0 +3.0 VCM= 13 V 2,3 -4.5 +4.5 Input offset current IIOVIN= 0 V, RS= 50 k 1,2 All -10 +10 nA 3 -20 +20 +VCC= 29.5 V, VIN= 0 V, -VCC= -0.5 V, RS= 50 k, 1,2 -10 +10 VCM= -14.5 V 3 -20 +20 M, D, P, L 1 01 -50 +50 +VCC= 2 V,
43、 VIN= 0 V, -VCC= -28 V, RS= 50 k, 1,2 All -10 +10 VCM= 13 V 3 -20 +20 M, D, P, L 1 01 -50 +50 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00524 DLA LAND AND MARITIME COLUMBU
44、S, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Raised input offset current IIO(R)VIN= 0 V, RS= 50 k
45、 1,2 All -25 +25 nA 3 -50 +50 M, D, P, L, R 1 02 -100 +100 Input bias current +IIBVIN= 0 V, RS= 50 k 1,2 All -100 +0.1 nA 3 -150 +0.1 M, D, P, L 1 01 -150 +0.1 M, D, P, L, R 1 02 -180 +0.1 +VCC= 29.5 V, VIN= 0 V, -VCC= -0.5 V, RS= 50 k, 1,2 All -150 +0.1 VCM= -14.5 V 3 -200 +0.1 M, D, P, L 1 01 -175
46、 +0.1 M, D, P, L, R 1 02 -225 +0.1 +VCC= 2 V, VIN= 0 V, -VCC= -28 V, RS= 50 k, 1,2 All -150 +0.1 VCM= 13 V 3 -200 +0.1 -IIBVIN= 0 V, RS= 50 k 1,2 All -100 +0.1 3 -150 +0.1 M, D, P, L 1 01 -150 +0.1 M, D, P, L, R 1 02 -180 +0.1 +VCC= 29.5 V, VIN= 0 V, -VCC= -0.5 V, RS= 50 k, 1,2 All -150 +0.1 VCM= -1
47、4.5 V 3 -200 +0.1 M, D, P, L 1 01 -175 +0.1 M, D, P, L, R 1 02 -225 +0.1 +VCC= 2 V, VIN= 0 V, -VCC= -28 V, RS= 50 k, 1,2 All -150 +0.1 VCM= 13 V 3 -200 +0.1 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICRO
48、CIRCUIT DRAWING SIZE A 5962-00524 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Collector output voltage 4/ (STROBED) VO(STB)+VIN= GND, -VIN= 15 V, RS= 50 , ISTB= -3.0 mA 1,2,3 All 14 V Common mode rejection CMR -28 V -VCC -0.5 V, RS= 50 1,2,3 All 80 dB 2 V +VCC 29
