1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change table I test limits ICCZ, tPZH, tPZL. - drw 06-04-26 Raymond Monnin B Add appendix A. -.drw 08-05-05 Robert M. Heber REV SHET REV B B B B B B B SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV B B A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10
2、 11 12 13 14 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Raymond Monnin COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, LINEAR, DUAL DRIVER AND
3、AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 06-02-14 RECEIVER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-06202 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E339-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from
4、 IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06202 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and spa
5、ce application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example:
6、 5962 F 06202 01 Q X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specif
7、ied RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type. The device type identifies the ci
8、rcuit function as follows: Device type Generic number Circuit function 01 UT54LVDM055LV Dual driver and receiver, LVDS 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Ve
9、ndor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 and as follows: Outlin
10、e letter Descriptive designator Terminals Package style X See figure 1 18 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted wit
11、hout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06202 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VDD) . -0.3 V dc to 4.0 V dc Voltage on any pin during operation -0.3 V dc
12、to (VDD+ 0.3 V) Voltage on any pin during cold spare -0.3 V dc to 4.0 V dc Storage temperature . -65C to +150C Power dissipation (PD) 1.25 W Junction temperature (TJ) 2/ +150C Thermal resistance, junction-to-case (JC) 10C/W Input current (II). 10 mA 1.4 Recommended operating conditions. Supply volta
13、ge (VDD) . 3.0 V dc to 3.6 V dc Input voltage, receiver inputs 2.4 V dc Input voltage, logic inputs 0 V dc to VDDOperating case temperature range (TC) -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate 1 rad(Si)/s) 300 Krad(Si) Single event latchup 100 Mev-cm2/mg 2. APPLIC
14、ABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTME
15、NT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-
16、103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philad
17、elphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been
18、obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Maximum junction temperature may be increased to +175C during burn-in and life test. Provided by IHSNot for
19、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06202 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements f
20、or device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for d
21、evice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, constructio
22、n, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal con
23、nections shall be as specified on figure 2. 3.2.3 Truth tables. The truth tables shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the prepar
24、ing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case
25、operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manuf
26、acturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device
27、 classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance ma
28、rk for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For
29、device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affir
30、m that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL
31、-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to thi
32、s drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall
33、 be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 77 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitt
34、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06202 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C VDD= 3.3 V 0.3 V Group A subgr
35、oups Device type Limits Unit unless otherwise specified Min Max DC ELECTRICAL CHARACTERISTICS DRIVER 1/ High-level input voltage VIH(TTL) 1, 2, 3 01 2.0 V Low-level input voltage VIL(TTL) 1, 2, 3 01 0.8 V Low-level output voltage VOLRL= 35 1, 2, 3 01 0.855 V High-level output voltage VOHRL= 35 1, 2,
36、 3 01 1.750 V Input leakage current IINVIN= VDDor GND, VDD= 3.6V 1, 2, 3 01 -5 +5 A Cold spare leakage current ICSVIN= 3.6 V, VDD= VSS1, 2, 3 01 -10 +10 A Differential output voltage VODRL= 35 1/ 1, 2, 3 01 250 400 mV Change in magnitude of VODfor complementary output states VODRL= 35 1/ 1, 2, 3 01
37、35 mV Offset voltage VOSRL= 35, (VOS= VOH+ VOL) 2 1, 2, 3 01 1.055 1.550 V Change in magnitude of VOSfor complementary output states VOSRL= 35 1, 2, 3 01 35 mV Input clamp voltage VCLICL= +18 mA 1, 2, 3 01 -1.5 V Output short circuit current 2/, 3/ IOSVIN= VDD, VOUT+ = 0 V or VIN= GND, VOUT- = 0 V,
38、DEN= VDD1, 2, 3 01 40 mA Output three-state current IOZDEN= 0.8 V, VDD= 3.6 V, VOUT= 0 V or VDD1, 2, 3 01 -5 +5 A Loaded supply current, drivers and receivers enabled 4/ ICCLRL= 35 all channels, VIN= VDDor VSS(all inputs), REN= DEN= VDD1, 2, 3 01 40.0 mA Loaded supply current, drivers and receivers
39、disabled 4/ ICCZDIN= VDDor VSS, REN= DEN= VSS1, 2, 3 01 15 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06202 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVI
40、SION LEVEL SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TC +125C VDD= 3.3 V 0.3 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max AC SWITCHING CHARACTERISTICS DRIVER 5/, 6/ Differential propagation
41、 delay, high to low tPHLDSee figure 4, 7/ 9, 10, 11 01 0.5 1.8 ns Differential propagation delay, low to high tPLHDSee figure 4, 7/ 9, 10, 11 01 0.5 1.8 ns Differential skew (tPHLD - tPLHD) tSKDSee figure 4 9, 10, 11 01 0 0.4 ns Channel-to-channel skew 8/ tSK1See figure 4 9, 10, 11 01 0 0.5 ns Chip-
42、to-chip skew 9/ tSK2See figure 4 9, 10, 11 01 1.3 ns Rise time 3/ tTLHSee figure 4 9, 10, 11 01 1.5 ns Fall time 3/ tTHLSee figure 4 9, 10, 11 01 1.5 ns Disable time, high to Z tPHZSee figure 5 9, 10, 11 01 5 ns Disable time, low to Z tPLZSee figure 5 9, 10, 11 01 5 ns Enable time, Z to high tPZHSee
43、 figure 5 9, 10, 11 01 7.0 ns Enable time, Z to Low tPZLSee figure 5 9, 10, 11 01 7.0 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06202 DEFENSE SUPPLY CENTER COLUMBUS COL
44、UMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TC +125C VDD= 3.3 V 0.3 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max DC ELECTRICAL CHARACTERISTICS RECEIVER 1
45、0/, 11/ High-level input voltage VIH1, 2, 3 01 2.0 V Low-level input voltage VIL1, 2, 3 01 0.8 V Low-level output voltage VOLIOL= 2 mA, VDD= 3.0 V 1, 2, 3 01 0.25 V High-level output voltage VOHIOH= -0.4 mA, VDD= 3.0 V 1, 2, 3 01 2.7 V Logic input leakage current IINEnables = REN= 0 V and 3.6 V, VDD
46、= 3.6 V 1, 2, 3 01 -5 +5 A LVDS receiver input current IIVIN= 2.4 V, VDD= 3.6 V 1, 2, 3 01 -15 +15 A Cold spare leakage current ICSVIN= 3.6 V, VDD= VSS1, 2, 3 01 -10 +10 A Differential input high threshold 3/ VTHVCM= +1.2 V 1, 2, 3 01 +100 mV Differential input low threshold 3/ VTLVCM= +1.2 V 1, 2,
47、3 01 -100 mV Output three-state current IOZDisabled, VOUT= 0 V or VDD, REN= 0.8 V 1, 2, 3 01 -5 +5 A Input clamp voltage VCLICL= -18 mA 1, 2, 3 01 -1.5 V Output short circuit current 2/, 3/ IOSEnabled, VOUT= 0 V, REN= VDD1, 2, 3 01 -75 mA See footnotes at end of table. Provided by IHSNot for ResaleN
48、o reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06202 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TC +125C VDD= 3.3 V 0.3 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max AC SWITCHING CHARACTERISTICS RECEIVER 6/, 12/ Differential propag
