DLA SMD-5962-87626 REV C-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS HEX D FLIP-FLOP WITH MASTER RESET MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add vendor CAGE F8859. Add device type 02. Add case outline X. Add table III, delta limits. Update drawing to MIL-PRF-38535 requirements - jak. 02-07-18 Thomas M. Hess B Add radiation features, section 1.5, for device type 02. Add radiation crite

2、ria in table I. Change case outline X lead temperature in section 1.3. Update boilerplate to include radiation hardness assured requirements - jak. 05-06-24 Thomas M. Hess C Update radiation features in section 1.5. Add table IB and paragraphs 4.4.4.1 - 4.4.4.2. Update boilerplate paragraphs to the

3、current MIL-PRF-38535 requirements. - LTG 12-02-22 Thomas M. Hess REV SHEET REV C C C SHEET 15 16 17 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Greg Pitz DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dl

4、a.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY D. A. DiCenzo APPROVED BY D. R. Cool MICROCIRCUIT, DIGITAL, ADVANCED CMOS, HEX D FLIP-FLOP WITH MASTER RESET, MONOLITHIC SILICON DRAWING APPROVAL DAT

5、E 87-06-26 REVISION LEVEL C SIZE A CAGE CODE 67268 5962-87626 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E198-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87626 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-

6、3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflecte

7、d in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 87626 01 E A Federal stock class designator RHA designator (see 1.2.1)

8、Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 F 87626 02 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.

9、3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the approp

10、riate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC174 Hex D-type flip-flop with master reset 02 54AC174 Hex D-type flip-flop with master reset 1.2.3 Device

11、 class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be

12、marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot

13、for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87626 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 a

14、nd as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack X CDFP4-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for dev

15、ice classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +6.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current (IIK,

16、IOK) . 20 mA DC output current (IOUT) (per pin) . 50 mA DC VCCor GND current (per pin) (ICC, IGND) . 100 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD) . 500 mW Lead temperature (soldering, 10 seconds): Case outline X . +260C All other case outlines except case X

17、+245C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C 4/ 1.4 Recommended operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) +3.0 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCCase operating

18、 temperature range (TC) . -55C to +125C Input rise or fall time: VCC= 3.6 V, VCC= 5.5 V 0 to 8 ns/V Minimum setup time, Dn to CP (ts): TC= +25C: VCC= 3.0 V 6.5 ns VCC= 4.5 V 5.0 ns TC= -55C to +125C: VCC= 3.0 V 7.5 ns VCC= 4.5 V 5.5 ns 1/ Stresses above the absolute maximum rating may cause permanen

19、t damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of

20、 -55C to +125C. Unused inputs must be held high or low. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data

21、 retention and battery backup systems. Data retention implies no input transition and no stored data loss with the following conditions: VIH 70 percent of VCC, VIL 30 percent of VCC, VOH 70 percent of VCCat -20A, VOL 30 percent of VCCat 20 A. 6/ Limits obtained during technology characterization/qua

22、lification, guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87626 DLA LAND A

23、ND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions Continued. 2/ 3/ 5/ Minimum hold time, Dn to CP (th): TC= +25C: VCC= 3.0 V 3.0 ns VCC= 4.5 V 3.0 ns TC= -55C to +125C: VCC= 3.0 V 3.0 ns VCC= 4.5 V 3.0 ns Minimum pulse width, CP

24、 (tw): TC= +25C: VCC= 3.0 V 5.5 ns VCC= 4.5 V 5.0 ns TC= -55C to +125C: VCC= 3.0 V 7.0 ns VCC= 4.5 V 5.0 ns Minimum pulse width, MR (tw): TC= +25C: VCC= 3.0 V 5.5 ns VCC= 4.5 V 5.0 ns TC= -55C to +125C: VCC= 3.0 V 7.0 ns VCC= 4.5 V 5.0 ns Minimum recovery time, MR to CP (tREC): TC= +25C: VCC= 3.0 V

25、2.5 ns VCC= 4.5 V 2.0 ns TC= -55C to +125C: VCC= 3.0 V 3.0 ns VCC= 4.5 V 2.0 ns Maximum frequency, CP (fMAX): TC= +25C: VCC= 3.0 V 90 MHz VCC= 4.5 V 95 MHz TC= -55C to +125C: VCC= 3.0 V 65 MHz VCC= 4.5 V 90 MHz 1.5 Radiation features. Device type 02: Maximum total dose available (dose rate = 50 300

26、rads (Si)/s) 300 krads (Si) No SEL occurs at effective LET (see 4.4.4.2) 93 MeV-cm2/mg 6/ 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. Unused

27、inputs must be held high or low. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery

28、backup systems. Data retention implies no input transition and no stored data loss with the following conditions: VIH 70 percent of VCC, VIL 30 percent of VCC, VOH 70 percent of VCCat -20A, VOL 30 percent of VCCat 20 A. 6/ Limits obtained during technology characterization/qualification, guaranteed

29、by design or process, but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87626 DLA LAND AND MARITIME COLUMBUS, O

30、HIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of th

31、ese documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electr

32、onic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order De

33、sk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. JEDEC SOLID STAT

34、E TECHNOLOGY ASSOCIATION (JEDEC) JEDEC Standard No. 20 - Standard for Description of 54/74ACXXXXX and 54/74ACTXXXXX Advanced High-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 3103 North 10thStreet, Suite

35、240-S Arlington, VA 22201). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has b

36、een obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect th

37、e form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical

38、 dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 and figure 1 herein. 3.2.2 Terminal connections. The terminal connections shal

39、l be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The block or logic diagram shall be as specified on figure 3. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRC

40、UIT DRAWING SIZE A 5962-87626 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposur

41、e circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical

42、 performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for ea

43、ch subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of no

44、t marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compli

45、ance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance sh

46、all be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herei

47、n). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirement

48、s of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for devic

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