DLA SMD-5962-88666-1988 MICROCIRCUITS DIGITAL BIPOLAR INTERRUPT HANDLER MONOLITHIC SILICON《硅单片中断处理程序双极数字微电路》.pdf
《DLA SMD-5962-88666-1988 MICROCIRCUITS DIGITAL BIPOLAR INTERRUPT HANDLER MONOLITHIC SILICON《硅单片中断处理程序双极数字微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-88666-1988 MICROCIRCUITS DIGITAL BIPOLAR INTERRUPT HANDLER MONOLITHIC SILICON《硅单片中断处理程序双极数字微电路》.pdf(20页珍藏版)》请在麦多课文档分享上搜索。
1、- DESC-DWG-BBhhb 57 W 7777775 0013778 3 REVISIONS DESCRIPTION SHEET * l- REV STATUS OF SHEET PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPAKIMENTC AND AGENCIES OF WE DEPARTMENT OF DEFENSE AMSC NIA DESC FORM 193 SEP 87 DATE (YR-W-DA) APPROVED I PREPARED BY DEFENS
2、E ELECTRONICS SUPPLY CENTER DAYlON, OHIO 45444 7 HNDLER, MONOLITHIC SILLCON I 10 JUNE 1988 5962- 88666 REVISION LEVEL OF 20 SHEET i DISTRIBUTION STATEMENT A. Approved for publlc release: dislrlbullon is unlimiled. 7-62 -33 Provided by IHSNot for ResaleNo reproduction or networking permitted without
3、license from IHS-,-,- - DESC-DWG-sbbb 59 W 7797775 0013779 5 W STANDARDIZED MILITARY DRAWING Y“rr.J .“I “3 I .“J“. (Vcc) - - - - - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc (V, ) - - - - - - - - - - - - . - - - - - - - 1.35 V dc to 1.65 V dc High !eve1 input voltage (VI 1- - - - - - - - - -
4、 - Low level input voltage (VI,! - - - - - - - - - - - Low level output current - - - - - - -_- - - - - - High level output current - - - - - - - - - - - - - Case operating temperature range (Tc) - - - - - - - 2.0 V to Vcc 0.8 V dc maximum 8.0 m4 -3.8 MA -55 C to +125C SIZE A 5962-88666 r must withs
5、tand the added PD due to short circuit test; e.g., 10s. DEFENCE ElfX“ICS SUPPLY CENEFI SHEET I R“, OHi 45444 IESC FORM 193A SEP 87 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DESC-DWG-bbb 57 = 7777795 OOL3780 L W 2. APPLICABLE DOCUMENTS 2.1 Gover
6、nment specification and standard. Unless otherwise specified, the following specification and standard, of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPEC
7、 IF ICATION MILITARY MI L-M-38510 - Microcircuits, General Specification for. STANDARD MI L ITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. (Copies of the specification and standard required by manufacturers in connection with specific acquisition functions should be obtained f
8、rom the contracting activity or as directed by the contracting activity. 1 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 Item re uirements. The individual item
9、requirements shall be in accordance with 1.2.1 of MIL-STDm, “f z ! i -i c 1 r- w cr: Li- H Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- - - _ DESC-DWG-bbb 59 W 9994975 00113793 T W ti a L 2 z Y u o el 2 E Y U A. c -1 O 1 t r I 1. 1 Provided by IH
10、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- F DESC-DWG-bbb 57 7777775 003377LI I 3.7 Notification of change. Notification of change to DESC-ECS shall be required in accordance rith MIL-STD-883 (see 3.1 herein). 3.8 Verification and review. DESC, DESCs agent,
11、and the acquiring activity retain the option to .eview the manufacturers facility and applicable required documentation. Offshore documentation ;hall be made available onshore at the option of the reviewer. 4. QUALITY ASSURANCE PROYISIONS 4.1 Sampling and inspection. Sampling and inspection procedur
12、es shall be in accordance with iection 4 of MIL-M-38510 to the extent specified in MIL-STD-883 (see 3.1 herein). 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be :onducted on al 1 devices prior to quality conformance inspection. The following additional c
13、riteria ;hall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A using the circuit submitted with the certificate of compliance (see 3.5 herein) 4.3.1 a. b. CI 4.3.2 a. b. (2) TA = +125OC, minimum. Interim and final electrical test parameters shall be as specified in table II h
14、erein, except interim eiectrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. 4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with b. iethod -5005 of MIL-STD-883 including groups A, B, C, and D inspections. The followi
15、ng additional riteria shall apply. Group A inspection. Tests shall be as specified irr table II herein. Subgroups 4, 5, and 6 in table, I, method 5005 of MIL-STD-883 shall be omitted. Subgroups 7 and 8 functional testing shall include verification of the functionality of the device. These tests form
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