DLA SMD-5962-89740 REV C-2013 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS OCTAL BUS TRANSCEIVER INVERTING WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

上传人:eastlab115 文档编号:699601 上传时间:2019-01-01 格式:PDF 页数:12 大小:152.19KB
下载 相关 举报
DLA SMD-5962-89740 REV C-2013 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS OCTAL BUS TRANSCEIVER INVERTING WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf_第1页
第1页 / 共12页
DLA SMD-5962-89740 REV C-2013 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS OCTAL BUS TRANSCEIVER INVERTING WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf_第2页
第2页 / 共12页
DLA SMD-5962-89740 REV C-2013 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS OCTAL BUS TRANSCEIVER INVERTING WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf_第3页
第3页 / 共12页
DLA SMD-5962-89740 REV C-2013 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS OCTAL BUS TRANSCEIVER INVERTING WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf_第4页
第4页 / 共12页
DLA SMD-5962-89740 REV C-2013 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS OCTAL BUS TRANSCEIVER INVERTING WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf_第5页
第5页 / 共12页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Technical changes in table I. Editorial changes throughout. 92-04-16 Michael A. Frye B Correct title to accurately describe device function. Add notes to figure 4, switching waveforms and test circuit. Update boilerplate to MIL-PRF-38535 requirem

2、ents. Editorial changes throughout. LTG 06-11-08 Thomas M. Hess C Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 13-03-25 Thomas M. Hess REV SHEET REV SHEET REV STATUS REV C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY James E. Nick

3、laus DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thomas J. Ricciuti APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGI

4、TAL, HIGH-SPEED CMOS, OCTAL BUS TRANSCEIVER, INVERTING WITH THREE-STATE, OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 90-03-14 REVISION LEVEL C SIZE A CAGE CODE 67268 5962-89740 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E301-13 Provided by IHSNot for ResaleNo reproduction

5、or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89740 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class

6、level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-89740 01 R A Drawing number Device type (see 1.2.1) Case outline (see 1.2.2) Lead finish (see 1.2.3) 1.2.1 Device type(s). The device

7、type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54HCT640 Octal bus transceiver, inverting, with three- state outputs, TTL compatible inputs 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Des

8、criptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC

9、+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input clamp diode current (IIK) 20 mA DC output clamp diode current (IOK) . 20 mA DC drain current (per output) . 35 mA DC VCCor GND current 70 mA Storage temperature range (TSTG) -65C to +150C Maximum power dissipation (PD) .

10、 500 mW 4/ Lead temperature (soldering, 10 seconds) . +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) . +175C 1.4 Recommended operating conditions. Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VCCOutput voltage r

11、ange (VOUT) . 0.0 V dc to VCCCase operating temperature range (TC) . -55C to +125C Input rise or fall time (tr, tf): VCC= 4.5 V . 0 to 500 ns _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and

12、 affect reliability. 2/ Unless otherwise specified, all voltages are referenced to ground. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ For TC= +100C to +125C, derate linearly at 8 mW/C to 300 mW. Provi

13、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89740 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards,

14、 and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated

15、Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-

16、780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094). 2.2 Non-Government publications. The following document(s) form

17、a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JESD7 - Standard for Description of 54/74HCXXXXX and 54/74HCTXXXXX Advanced High-Speed CMOS Device

18、s. (Copies of these documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 3103 North 10thStreet, Suite 240-S Arlington, VA 22201-2107). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited here

19、in, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A fo

20、r non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in

21、 accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function o

22、f the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimen

23、sions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figu

24、re 2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89740 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3.2.4 Logic diagram. The logic diagram shall be as sp

25、ecified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall

26、 apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, app

27、endix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. 3.5.

28、1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify when the QML flow op

29、tion is used. 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved

30、source of supply shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits deliver

31、ed to this drawing. 3.8 Notification of change. Notification of change to DLA Land and Maritime -VA shall be required for any change that affects this drawing. 3.9 Verification and review. DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the

32、 manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89740 DLA L

33、AND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions -55C TC +125C 4.5 V VCC 5.5 V unless otherwise specified Group A subgroups Device type Limits Unit Min Max High level output voltage

34、1/ VOHVCC= 4.5 V VIN= VIH= 2.0 V or VIL= 0.8 V IOH= -20 A 1, 2, 3 01 4.4 V IOH= -6.0 mA 3.7 Low level output voltage 1/ VOLVCC= 4.5 V VIN= VIH= 2.0 V or VIL= 0.8 V IOL= +20 A 1, 2, 3 01 0.1 V IOL= +6.0 mA 0.4 High level input voltage 2/ VIHVCC= 4.5 V 1, 2, 3 01 2.0 V Low level input voltage 2/ VILVC

35、C= 4.5 V 1, 2, 3 01 0.8 V Additional quiescent supply current 3/ ICCVCC = 5.5 V Any 1 input: VIN= 2.4 V or 0.5 V Other inputs: VIN= VCCor GND IOUT= 0.0 A 1, 2, 3 01 3.0 mA Quiescent supply current ICCVCC= 5.5 V VIN= VCCor GND 1, 2, 3 01 160 A Three-state leakage output current, high IOZHVCC= 5.5 V V

36、IN= VCCor GND VOUT= VCC1, 2, 3 01 +10 A Three-state leakage output current, low IOZLVOUT= GND -10 Input leakage current, low IILVCC= 5.5 V, VIN= GND 1, 2, 3 01 -1.0 A Input leakage current, high IIHVCC= 5.5 V, VIN= VCC1, 2, 3 01 +1.0 Input capacitance CINSee 4.3.1c 4 01 10 pF Three-state output capa

37、citance COUTSee 4.3.1c 4 01 20 pF Functional tests VCC= 4.5 V, See 4.3.1d 7, 8 01 Propagation delay time, An to Bn and Bn to An tPHL, tPLHVCC= 4.5 V CL= 50 pF minimum See figure 4 9 01 22 ns 10, 11 33 Propagation delay time, output enable, high Z to output tPZH, tPZLVCC= 4.5 V RL= 1 k CL= 50 pF mini

38、mum See figure 4 9 01 30 ns 10, 11 45 Propagation delay time, output disable, output to high Z tPHZ, tPLZ9 01 30 ns 10, 11 45 Transition time 4/ tTLH, tTHLVCC= 4.5 V CL= 50 pF minimum See figure 4 9 01 12 ns 10, 11 18 See footnotes on next sheet. Provided by IHSNot for ResaleNo reproduction or netwo

39、rking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89740 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. 1/ VOHand VOLtests shall be tested at VCC= 4.5 V. Wor

40、st case VIHand VILoccur at VCC= 5.5 V and at VCC= 4.5 V respectively. Limits shown apply to operation at VCC= 5.0 V 0.5 V. 2/ VIHand VILtests are not required and shall be applied as forcing functions for VOHand VOLtests. 3/ Guaranteed, if not tested, to the specified limits in table I. 4/ Output tr

41、ansition time, (tTHL, tTLH) if not tested, shall be guaranteed to specified limits in table I. Device type 01 Case outline R Terminal number Terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 DIR A0 A1 A2 A3 A4 A5 A6 A7 GND B7 B6 B5 B4 B3 B2 B1 B0 OE VCCFIGURE 1. Terminal connections

42、. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89740 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 Control inputs Data port status OE DIR An Bn L L O I H H

43、Z Z H L Z Z L H I O H = High level voltage L = Low level voltage I = Input O = Output inverted Z = High impedance FIGURE 2. Truth table. FIGURE 3. Logic diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 596

44、2-89740 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 NOTES: 1. CL = 50 pF minimum, includes test jig and probe capacitance. 2. Input signal from pulse generator: VIN= 0.0 V to 3 V; PRR 1 MHz; ZO= 50; tr= 6.0 ns; tf= 6.0 ns; trand tfshall be measured

45、from 0.3 V to 2.7 V and from 2.7 V to 0.3 V, respectively; duty cycle = 50 percent. 3. The outputs are measured one at a time with one transition per measurement. FIGURE 4. Switching waveforms and test circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

46、 IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89740 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 NOTES: 1. VCC for tPLZ and tPZL. 2. GND for tPHZand tPZH. 3. CLincludes test jig and probe capacitance. 4. Input signal from pulse generator: VIN= 0

47、.0 V to 3 V; PRR 1 MHz; ZO= 50; tr= 6.0 ns; tf= 6.0 ns; trand tfshall be measured from 0.3 V to 2.7 V and from 2.7 V to 0.3 V, respectively; duty cycle = 50 percent. 5. The outputs are measured one at a time with one transition per measurement. FIGURE 4. Switching waveforms and test circuit Continue

48、d. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89740 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 10 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be co

展开阅读全文
相关资源
猜你喜欢
  • BS PD 6699-2-2007 Nanotechnologies – nPart 2 Guide to safe handling and ndisposal of manufactured nnanomaterials《纳米技术 第2部分 安全处理和处置人造纳米材料用指南》.pdf BS PD 6699-2-2007 Nanotechnologies – nPart 2 Guide to safe handling and ndisposal of manufactured nnanomaterials《纳米技术 第2部分 安全处理和处置人造纳米材料用指南》.pdf
  • BS PD 6699-3-2010 PUBLISHED DOCUMENT nNanotechnologies nPart 3 Guide to assessing airborne nexposure in occupational settings nrelevant to nanomaterials《出版文献 纳米技术 第3部分 评.pdf BS PD 6699-3-2010 PUBLISHED DOCUMENT nNanotechnologies nPart 3 Guide to assessing airborne nexposure in occupational settings nrelevant to nanomaterials《出版文献 纳米技术 第3部分 评.pdf
  • BS PD 6702-1-2009 Structural use of aluminium - Part 1 Recommendations for the design of aluminium structures to BS EN 1999《铝的结构应用 第1部分 关于依照BS EN 1999进行铝结构设计的建议》.pdf BS PD 6702-1-2009 Structural use of aluminium - Part 1 Recommendations for the design of aluminium structures to BS EN 1999《铝的结构应用 第1部分 关于依照BS EN 1999进行铝结构设计的建议》.pdf
  • BS PD 6703-2009 PUBLISHED DOCUMENT nStructural bearings – Guidance non the use of structural bearings《已出版文件 结构轴承 结构轴承的使用指南》.pdf BS PD 6703-2009 PUBLISHED DOCUMENT nStructural bearings – Guidance non the use of structural bearings《已出版文件 结构轴承 结构轴承的使用指南》.pdf
  • BS PD 6705-3-2009 Structural use of steel and aluminium - Part 3 Recommendations for the execution of aluminium structures to BS EN 1090-3《钢和铝结构使用 第3部分 要求符合BS EN 1090-3的铝.pdf BS PD 6705-3-2009 Structural use of steel and aluminium - Part 3 Recommendations for the execution of aluminium structures to BS EN 1090-3《钢和铝结构使用 第3部分 要求符合BS EN 1090-3的铝.pdf
  • BS PD 68888-2011 PUBLISHED DOCUMENT nObjectives and learning noutcomes for BS 8888 training《出版文件BS 8888培训的目的和学习成果》.pdf BS PD 68888-2011 PUBLISHED DOCUMENT nObjectives and learning noutcomes for BS 8888 training《出版文件BS 8888培训的目的和学习成果》.pdf
  • BS PD 76006-2017 Guide to learning and development《学习和发展指南》.pdf BS PD 76006-2017 Guide to learning and development《学习和发展指南》.pdf
  • BS PD 7974-5-2014 Application of fire safety engineering principles to the design of buildings Fire and rescue service intervention (Sub-system 5)《消防安全工程原则在建筑设计中的应用 消防和救援服.pdf BS PD 7974-5-2014 Application of fire safety engineering principles to the design of buildings Fire and rescue service intervention (Sub-system 5)《消防安全工程原则在建筑设计中的应用 消防和救援服.pdf
  • BS PD 8100-2015 Smart cities overview Guide《智能城市综述 指南》.pdf BS PD 8100-2015 Smart cities overview Guide《智能城市综述 指南》.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1